基本信息
硫化锡 (SnS) 是一种棕色固体，不溶于水。它在自然界中以硫锡矿的形式存在，具有斜方晶体结构。 SnS 还具有六乙醇（纤锌矿）和立方（闪锌矿）晶型，但在室温下比硫锡矿更不稳定。
晶体结构
| Fractional Coordinates | Orthogonal Coordinates | |||||||
|---|---|---|---|---|---|---|---|---|
| Label | Elmt | x | y | z | xor[Å] | yor[Å] | zor[Å] | |
| 1. | T2 | S | 0.4780 | 0.8500 | 0.2500 | 1.865 | -4.067 | 8.693 |
| 2. | T2 | S | 0.9780 | 0.6500 | 0.7500 | 4.885 | -3.169 | 6.764 |
| 3. | T2 | S | 0.5220 | 0.1500 | 0.7500 | 3.585 | -1.595 | 1.198 |
| 4. | T2 | S | 0.0220 | 0.3500 | 0.2500 | 0.565 | -2.493 | 3.127 |
| 5. | T1 | Sn | 0.1150 | 0.1180 | 0.2500 | 0.971 | -1.035 | 0.982 |
| 6. | T1 | Sn | 0.6150 | 0.3820 | 0.7500 | 3.795 | -2.608 | 3.610 |
| 7. | T1 | Sn | 0.8850 | 0.8820 | 0.7500 | 4.479 | -4.627 | 8.908 |
| 8. | T1 | Sn | 0.3850 | 0.6180 | 0.2500 | 1.655 | -3.053 | 6.281 |
The graph below shows peak intensities for SnS:
光伏应用
SnS是一种具有层状斜方结构的p型半导体材料。它对人体和环境毒性很小，带隙为1.0-1.5 eV。这使得 SnS 成为宽带隙 n 型太阳能电池吸收层的合适选择。制造 SnS 薄膜的各种技术包括：真空蒸发、化学浴沉积和喷雾热解。 1
300 K 时的基本参数
| Crystal structure: | Orthorhombic | 2 |
| Group of symmetry: | Pbnm | 2 |
| Number of atoms in 1 cm3: | 4.15*1026 | 2 |
| Unit cell volume: | 192.6 Å3 | [6] |
| Atoms per unit cell: | 4 | [7] |
| Debye temperature: | 270 K | [12] |
| Density: | 5.08 g/cm3 | [12] |
| Dielectric constants: | ||
| ε(0) | 32(4) E||a T=300 K | [12] |
| 48(5) E||b | ||
| 32(4) E||c | ||
| ε(∞) | 14(2) E||a | |
| 16(2) E||b | ||
| 16(2) E||c | ||
| Effective electron density: | 6.3*1014-1.2*1015 cm-3 | Devika2006 |
| Effective hole density: | 1018 cm-3 | Devika2006 |
| Effective Masses: | ||
| Mp(||a) | 0.2 m0 T= 300 K | [12] |
| Mp(||b) | 0.2 m0 | |
| Mp(||c) | 1.0 m0 | |
| Mds,p | 0.95 m0 T = 300 K | [12] |
| Mds,p | 0.45 m0 |
| Lattice constants: | |
| a= 4.33 Å | |
| b = 11.18 Å | |
| c = 3.98 Å |
能带结构和载流子浓度
能带结构和载流子浓度
SnS 薄膜光学带隙随厚度变化的数据可在厚度对蒸发 SnS 薄膜物理性能的影响中找到 M. Devika, N. Koteeswara Reddy, K. Ramesh, R. Ganesan, K. R. Gunasekhar, E. S. R. Gopal, and K. T. Ramakrishna Reddy, J. Electrochem. Soc. 154, H67 (2007), DOI:10.1149/1.2398816 [10]
温度依赖性
SnS 的电导率和晶粒尺寸与温度的关系图可以在 M. Devika、K. T. Ramakrishna Reddy、N. Koteeswara Reddy、K. Ramesh、R Ganesan 等人的 Microstruction dependentphysical properties of evaporated tin sulfide films中找到，J. Appl. Phys.。 100, 023518 (2006_; doi: 10.1063/1.2216790 3
施主和受主
施主: Cl, Al
受主: Cu, Ag
施主和受主电离能 [12]
| Compound | Impurity | Donor Ionization energy, eV | Acceptor Ionization energy, eV |
| ZnS | Cl | 0.25, 0.37 | |
| Cu | 0.95 | ||
| Ag | 0.55 |
电气特性
电性能基本参数
Energy gap: Direct:1.2-1.5 eV 1
Indirect: 1.0-1.2 ev 1
Binding Energies: S 2p3/2 = 161.4 eV 3
Sn 3d5/2 = 485.3 eV 3
Intrinsic carrier concentration: 109 cm-3 (300 K) [8]
Hole mobility (Hall Mobility): 90 cm2/Vs (resistivity = 0.06 Ω cm @ 300 K) 3
Intrinsic resistivity: 13-20 Ω 3
流动性和霍尔效应
霍尔迁移率和载流子密度与基板温度的关系图可以在 N. Koteeswara Reddy, K.T. 中找到。 Ramakrishna Reddy，喷雾热解硫化锡薄膜的电性能，固态电子学，第 49 卷，第 6 期，2005 年 6 月，第 902-906 页，ISSN 0038-1101，10.1016/j.sse.2005.03.003。 [9]
光学特性
折射率 3.52 3
吸收系数 104 cm-1 3
SnS 生长薄膜的透射率与波长的关系图可在厚度对蒸发 SnS 薄膜物理特性的影响中找到 M. Devika, N. Koteeswara Reddy, K. Ramesh, R. Ganesan, K. R. Gunasekhar, E. S. R. Gopal, and K. T. Ramakrishna Reddy, J. Electrochem. Soc. 154, H67 (2007), DOI:10.1149/1.2398816 [10]
吸收光谱和吸收系数与光子能量的关系图可以在 Wei Guang-Pu; Zhang Zhi-Lin; Zhao Wei-Ming; Gao Xiang-Hong; Chen Wei-Qun; Tanamura, H.; Yamaguchi, M.; Noguchi, H.; Nagatomo, T.; Omoto, O.; , "Investigation on SnS film by RF sputtering for photovoltaic application," Photovoltaic Energy Conversion, 1994., Conference Record of the Twenty Fourth. IEEE Photovoltaic Specialists Conference - 1994, 1994 IEEE First World Conference on , vol.1, no., pp.365-368 vol.1, 5-9 Dec 1994 doi: 10.1109/WCPEC.1994.519977 [5]
热性能
Linear thermal expansion coefficient: α = 2.8*10-7 K-1 T= 300K [12]
Heat capacity: CP = 45 J mol-1 K-1 T=300 K [12]
CP = 29.3 J mol-1 K-1 T= 80 K [12]
机械性能、弹性常数、晶格振动
Basic Parameters
Bulk modulus: 36.6 GPa [6]
Density: 5.08 g/cm3 [12]
Hardness: 2 on Mohs scale [7]
声子频率
|
VTO(B1u) |
6.64*1012 s-1 | T = 300 K |
| VLO(B1u) | 8.28*1012 s-1 | |
| VTO(B1u) | 5.32*1012 s-1 | |
| VTO(B1u) | 6.43*1012 s-1 | |
| VTO(B1u) | 2.96*1012 s-1 | |
| VLO(B1u) | 3.2*1012 s-1 |
[12]
[2] Naoya Sato, Masaya Ichimura, Eisuke Arai, Yoshihisa Yamazaki, Characterization of electrical properties and photosensitivity of SnS thin films prepared by the electrochemical deposition method, Solar Energy Materials and Solar Cells, Volume 85, Issue 2, 15 January 2005, Pages 153-165, ISSN 0927-0248, 10.1016/j.solmat.2004.04.014.
(http://www.sciencedirect.com/science/article/pii/S0927024804002077)
[4] M. Calixto-Rodriguez, H. Martinez, A. Sanchez-Juarez, J. Campos-Alvarez, A. Tiburcio-Silver, M.E. Calixto, Structural, optical, and electrical properties of tin sulfide thin films grown by spray pyrolysis, Thin Solid Films, Volume 517, Issue 7, 2 February 2009, Pages 2497-2499, ISSN 0040-6090, 10.1016/j.tsf.2008.11.026.
(http://www.sciencedirect.com/science/article/pii/S0040609008014077)
[5] Wei Guang-Pu; Zhang Zhi-Lin; Zhao Wei-Ming; Gao Xiang-Hong; Chen Wei-Qun; Tanamura, H.; Yamaguchi, M.; Noguchi, H.; Nagatomo, T.; Omoto, O.; , "Investigation on SnS film by RF sputtering for photovoltaic application," Photovoltaic Energy Conversion, 1994., Conference Record of the Twenty Fourth. IEEE Photovoltaic Specialists Conference - 1994, 1994 IEEE First World Conference on , vol.1, no., pp.365-368 vol.1, 5-9 Dec 1994 doi: 10.1109/WCPEC.1994.519977
(http://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=519977&isnumber=11458)
[6] L ehm, K knorr, P dera, A krimmel, P bouvier, and M Meqouar, Pressure-induced structural phase transistion in the IV-VI semiconductor SnS, J. Phys.: Condens. Matter 16 3545 doi:10.1088/0953-8984/16/21/004
(http://iopscience.iop.org/0953-8984/16/21/004)
[7] Wolframalpha, Herzenbergite: fomula, density, Mohs hardness, refractive index,…
(http://preview.wolframalpha.com/entities/minerals/herzenbergite/ii/w2/73/)
[8] Polymorphic Tin Sulfide Thin Films of Zinc Blende and Orthorhombic Structures by Chemical Deposition David Avellaneda, M. T. S. Nair, and P. K. Nair, J. Electrochem. Soc. 155, D517 (2008), DOI:10.1149/1.2917198
(http://scitation.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=JE...)
[9] N. Koteeswara Reddy, K.T. Ramakrishna Reddy, Electrical properties of spray pyrolytic tin sulfide films, Solid-State Electronics, Volume 49, Issue 6, June 2005, Pages 902-906, ISSN 0038-1101, 10.1016/j.sse.2005.03.003.
(http://www.sciencedirect.com/science/article/pii/S0038110105000845)
[10] Thickness Effect on the Physical Properties of Evaporated SnS Films
M. Devika, N. Koteeswara Reddy, K. Ramesh, R. Ganesan, K. R. Gunasekhar, E. S. R. Gopal, and K. T. Ramakrishna Reddy, J. Electrochem. Soc. 154, H67 (2007), DOI:10.1149/1.2398816
(http://scitation.aip.org/getabs/servlet/GetabsServlet?prog=normal&id=JES...)
[11] Richard H. Bube and Edward L. Lind, Photoconductivity of Zinc selenide crystals and a correlation of donor and acceptor levels in II-VI photoconductors. DOI: 10.1103/PhysRev.110.1040 (http://prola.aps.org/abstract/PR/v110/i5/p1040_1)
[12] Madelung, O. (2004). Semiconductors: Data handbook. (3rd ed., pp. 1981-1989). Springer.
主要由犹他大学本科生 Jeff Provost 和 Carina Hahn 与 Mike Scarpulla 教授合作开发。 Caitlin Arndt、Christian Robert、Katie Furse、Jash Sayani 和 Liz Lund 也做出了贡献。这项工作得到了美国国家科学基金会材料世界网络计划奖 1008302 的全力支持。这些页面是一项正在进行的工作，我们征求世界各地知识渊博的各方的意见，以获取更准确或更多的信息。请联系 [email protected] 提出此类建议。
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