晶体结构
Fractional Coordinates | Orthogonal Coordinates | |||||||
---|---|---|---|---|---|---|---|---|
Label | Elmt | x | y | z | xor[Å] | yor[Å] | zor[Å] | |
1. | T1 | Cd | 0.6667 | 0.3333 | 0.0000 | -1.738 | -0.109 | 1.768 |
2. | T1 | Cd | 0.3333 | 0.6667 | 0.5000 | 0.824 | 3.199 | 2.747 |
3. | T1 | Cd | 0.6667 | 0.3333 | 1.0000 | -1.415 | 6.859 | 2.513 |
4. | T2 | Se | 0.6667 | 0.3333 | 0.3750 | -1.617 | 2.504 | 2.048 |
5. | T2 | Se | 0.3333 | 0.6667 | 0.8750 | 0.945 | 5.812 | 3.027 |
使用 Cu Kα 单色源的理论衍射数据。
(m是多重度,N是最大弯曲数)
ref no. | h | k | l | d(hkl) | 2-Theta | Intensity | I/Imax | m | N |
---|---|---|---|---|---|---|---|---|---|
[1] | 0 | 1 | 0 | 3.72261 | 23.8828 | 2.01941e-001 | 100.0 | 6 | 1 |
[2] | 0 | 0 | 2 | 3.50760 | 25.3704 | 1.19461e-001 | 59.2 | 2 | 4 |
[3] | 0 | 1 | 1 | 3.28831 | 27.0935 | 1.53355e-001 | 75.9 | 12 | 2 |
[4] | 0 | 1 | 2 | 2.55288 | 35.1217 | 7.60123e-002 | 37.6 | 12 | 5 |
[5] | 1 | 1 | 0 | 2.14925 | 42.0016 | 1.76915e-001 | 87.6 | 6 | 2 |
[6] | 0 | 1 | 3 | 1.98014 | 45.7830 | 1.76516e-001 | 87.4 | 12 | 10 |
[7] | 0 | 2 | 0 | 1.86131 | 48.8904 | 2.81154e-002 | 13.9 | 6 | 4 |
[8] | 1 | 1 | 2 | 1.83259 | 49.7080 | 1.10330e-001 | 54.6 | 12 | 6 |
[9] | 0 | 2 | 1 | 1.79906 | 50.6993 | 2.62001e-002 | 13.0 | 12 | 5 |
[10] | 0 | 0 | 4 | 1.75380 | 52.1043 | 9.71422e-004 | 0.5 | 2 | 16 |
[11] | 0 | 2 | 2 | 1.64416 | 55.8710 | 1.92128e-002 | 9.5 | 12 | 8 |
[12] | 0 | 1 | 4 | 1.58655 | 58.0890 | 1.00406e-003 | 0.5 | 12 | 17 |
[13] | 0 | 2 | 3 | 1.45629 | 63.8640 | 6.32987e-002 | 31.3 | 12 | 13 |
[14] | 1 | 2 | 0 | 1.40701 | 66.3825 | 2.18411e-002 | 10.8 | 12 | 5 |
[15] | 1 | 2 | 1 | 1.37954 | 67.8819 | 2.09435e-002 | 10.4 | 24 | 6 |
[16] | 1 | 1 | 4 | 1.35881 | 69.0623 | 2.22018e-003 | 1.1 | 12 | 18 |
[17] | 0 | 1 | 5 | 1.31289 | 71.8441 | 4.43706e-002 | 22.0 | 12 | 26 |
[18] | 1 | 2 | 2 | 1.30587 | 72.2909 | 1.74150e-002 | 8.6 | 24 | 9 |
[19] | 0 | 2 | 4 | 1.27644 | 74.2329 | 4.40427e-004 | 0.2 | 12 | 20 |
[20] | 0 | 3 | 0 | 1.24087 | 76.7395 | 2.86434e-002 | 14.2 | 6 | 9 |
[21] | 1 | 2 | 3 | 1.20560 | 79.4187 | 6.73141e-002 | 33.3 | 24 | 14 |
[22] | 0 | 3 | 2 | 1.16983 | 82.3607 | 2.45689e-002 | 12.2 | 12 | 13 |
[23] | 0 | 0 | 6 | 1.16920 | 82.4144 | 4.08848e-003 | 2.0 | 2 | 36 |
[24] | 0 | 2 | 5 | 1.12039 | 86.8627 | 2.73303e-002 | 13.5 | 12 | 29 |
[25] | 0 | 1 | 6 | 1.11547 | 87.3415 | 5.39674e-003 | 2.7 | 12 | 37 |
[26] | 1 | 2 | 4 | 1.09748 | 89.1489 | 5.54168e-004 | 0.3 | 24 | 21 |
[27] | 2 | 2 | 0 | 1.07463 | 91.5755 | 1.92663e-002 | 9.5 | 6 | 8 |
[28] | 1 | 3 | 0 | 1.03247 | 96.4951 | 8.94575e-003 | 4.4 | 12 | 10 |
[29] | 2 | 2 | 2 | 1.02749 | 97.1194 | 1.82529e-002 | 9.0 | 12 | 12 |
[30] | 1 | 1 | 6 | 1.02706 | 97.1730 | 1.82418e-002 | 9.0 | 12 | 38 |
[31] | 1 | 3 | 1 | 1.02146 | 97.8876 | 8.99105e-003 | 4.5 | 24 | 11 |
[32] | 0 | 3 | 4 | 1.01296 | 98.9977 | 9.71735e-004 | 0.5 | 12 | 25 |
光伏应用
300 K 时的基本参数
Crystal structure: | Wurtzite | 1 |
Group of symmetry: | P6_3mc | 1 |
Number of atoms in 1 cm3: | 3.56*1026 | 1 |
Unit cell volume: | 112.2547 Å3 | 1 |
Atoms per unit cell: | 4 | 1 |
Auger recombination coefficient C: | |||
Debye temperature: | 181.7 K | T = 0 K | 2 |
Density: | 5.81 g/cm3 | T = 300 K | 2 |
Dielectric constants: | ɛ(0)|| = 10.16 | T = 300 K | 2 |
9.29 | T = 100 K | ||
ɛ(0)⊥ = 9.29 | T = 300 K | ||
9.15 | T = 100 K | ||
ɛ(∞)|| = 6.30 | T = 300 K | ||
6.30 | T = 100 K | ||
ɛ(∞) ⊥ = 6.20 | T = 300 K | ||
6.20 | T = 100 K | ||
Effective electron density: | |||
Effective electron masses: | mn = 0.12 m0 | 2 | |
Effective hole density: | |||
Effective hole masses: | mhh = 2.14 m0 | [111] direction | 2 |
0.9 m0 | [100] direction | ||
1.7 m0 | [110] direction | ||
mlh = 0.16 m0 | [111] direction | ||
0.18 m0 | [100] direction | ||
0..16 m0 | [110] direction | ||
mso = 0.12 m0 | split-off band | ||
Lattice constants: | a=b= 4.2985 Å | 1 | |
c = 7.0152 Å |
能带结构和载流子浓度
温度依赖性
退火 CdSe 薄膜的温度依赖性 3
Thin Films | Crystalite size (Å) | Band Gap 'Eg' (eV) | Electrical resistivity (Ωcm) | Activation energy Ea (eV) | ||
---|---|---|---|---|---|---|
HR | LR | |||||
As-deposited | 40 | 2.3 | 3.25 × 105 | 0.86 | 0.34 | |
373 K | 60 | 2.0 | 9.58 × 104 | 0.79 | 0.31 | |
473 K | 80 | 1.8 | 5.38 × 104 | 0.72 | 0.27 | |
573 K | 120 | 1.8 | 8.23 × 103 | 0.69 | 0.18 | |
673 K | 180 | 1.7 | 1.17 × 103 | 0.65 | 0.16 |
HR: 高温区域 LR: 低温区域
CdSe 薄膜的吸光度与波长关系图可在以下位置找到:3
CdSe 薄膜的 log ρ 与 (1000/T) 的关系图可在以下位置找到: 3
电气特性
电气性能基本参数
Energy gap: 1.74 eV T = 300 K 2
Energy spin-orbital splitting: 470 meV 2
Intrinsic carrier concentration: 6*1013 cm-3 T = 800 K 2
6*1016 cm-3 T = 1300 K
Carrier mobility: μn = 660 cm2/Vs T = 300 K 2
5000 cm2/Vs T = 80 K
200 cm2/Vs T = 800 K
Electron drift mobility: μdr,n = 720 cm2/Vs T = 300 K 2
Hole Hall mobility: μH,p = 40 cm2/Vs T = 300 K 2
热性能
Heat capacity: Cp [J mol-1 K-1] = 48.46 + 5.87-3 *T – 58154*T-2 2
Thermal conductivity: κL = 0.09 W cm-1 K-1 2
机械性能、弹性常数、晶格振动
基本参数
Density: 5.81 g/cm3 T = 300 K 2
弹性常数
Elastic Constants: c11 = 74.6 Gpa T = 300 K 2
c12 = 46.1 Gpa
c33 = 81.7 Gpa
c44 = 13.0 Gpa
c66 = 14.3 Gpa
这些有关光伏材料特性的页面主要由犹他大学本科生 Jeff Provost 和 Carina Hahn 与 Mike Scarpulla 教授合作开发。 Caitlin Arndt、Christian Robert、Katie Furse、Jash Sayani 和 Liz Lund 也做出了贡献。这项工作得到了美国国家科学基金会材料世界网络计划奖 1008302 的全力支持。这些页面是一项正在进行的工作,我们在此征求来自世界各地专业人士意见,以获取更多更准确的信息。请联系 [email protected] 提出建议。犹他大学和 NSF 均不保证这些数据的准确性。
- 1. a. b. c. d. e. f. “Electronic, optical, and structural properties of some wurtzite crystals”, Physical Review B, vol. 48, no. 7, pp. 4335 - 4351, 1993.
- 2. a. b. c. d. e. f. g. h. i. j. k. l. m. n. o. Semiconductors Data Handbook. Berlin: Springer, 2004, pp. 815-835.
- 3. a. b. c. “Influence of air annealing on the structural, optical and electrical properties of chemically deposited CdSe nano-crystallites”, Applied Surface Science, vol. 223, no. 4, pp. 343 - 351, 2004.