硅的一般性质

Property	Value
Atomic Density	5 x 10²² cm^-3 5 x 10²⁸ m^-3
Atomic Weight	28.09
Density (ρ)	2.328 g cm^-3 2328 kg m^-3
Energy Bandgap (E_G)	1.1242 eV
Intrinsic Carrier Concentration (n_i) at 300K*	1 x 10¹⁰ cm^-3 1 x 10¹⁶ m^-3
Intrinsic Carrier Concentration (n_i) at 25°C*	8.6 x 10⁹ cm^-3 8.6 x 10¹⁵ m^-3
Lattice Constant	0.543095 nm
Melting Point	1415 °C
Thermal Conductivity	1.5 Wcm^-1K^-1 150 Wm^-1K^-1
Thermal Expansion Coefficient	2.6 x 10^-6 K^-1
Effective Density of States in the Conduction Band (N_C)	3 x 10¹⁹ cm^-3 3 x 10²⁵ m^-3
Effective Density of States in the Valence Band (N_V)	1 x 10¹⁹ cm^-3 1 x 10²⁵ m^-3
Relative Permittivity (ε_r)	11.7
Electron Affinity	4.05 eV
Electron Diffusion Coefficient (D_e)	kT/q µ_e
Hole Diffusion Coefficient (D_h)	kT/q µ_h

* 1 2中提供了更新数据。

硅的性质随掺杂的变化 (300 K)

载流子迁移率是载流子类型和掺杂水平的函数。这里计算的值使用与 PC1D 相同的公式来拟合 3 和 4 5 6中给出的值。作为掺杂函数的寿命是根据体寿命给出的。

Electron mobility (µ_e)	Diffusivity (D_e)
Doping Level: cm^-3
Majority carrier: cm²V^-1s^-1 Minority carrier: cm²V^-1s^-1	cm²s^-1 cm²s^-1
Hole Mobility (µ_h)	Diffusivity (D_h)
Majority carrier: cm²V^-1s^-1 Minority carrier: cm²V^-1s^-1	cm²s^-1 cm²s^-1
Approx. Resistivity (for doping > 10¹²)
n-type: ohm cm p-type: ohm cm

1. A. B. Sproul, Green, M. A., and Zhao, J., “Improved value for the silicon intrinsic carrier concentration at 300 K”, Applied Physics Letters, vol. 57, p. 255, 1990.
2. A. B. Sproul and Green, M. A., “Improved value for the silicon intrinsic carrier concentration from 275 to 375 K”, Journal of Applied Physics, vol. 70, pp. 846-854, 1991.
3. C. H. Wang, Misiakos, K., and Neugroschel, A., “Minority-carrier transport parameters in n-type silicon”, IEEE Transactions on Electron Devices, vol. 37, pp. 1314 - 1322, 1990.
4. W. R. Thurber, Mattis, R. L., Liu, Y. M., and Filliben, J. J., “Resistivity-Dopant Density Relationship for Boron-Doped Silicon”, Journal of The Electrochemical Society, vol. 127, pp. 2291-2294, 1980.
5. W. R. Thurber, Mattis, R. L., Liu, Y. M., and Filliben, J. J., “Resistivity-Dopant Density Relationship for Phosphorus-Doped Silicon”, Journal of The Electrochemical Society, vol. 127, pp. 1807-1812, 1980.
6. W. R. Thurber, Mattis,, Liu,, and Filliben, “The Relationship Between Resistivity and Dopant Density for Phosphorus- and Boron-Doped Silicon”. U.S. Department of Commerce National Bureau of Standards, 1981.