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J. Czochralski, Ein neues Verfahren zur Messung der Kristallisationsgeschwindigheit der Metalle, Zeitschrift für physikalische Chemie, vol. 92, pp. 219–221, 1918.
A. Cuevas, The Recombination Parameter J0, Energy Procedia, vol. 55, pp. 53 - 62, 2014.
P. J. Cousins et al., Gen III: Improved Performance at Lower Cost, in 35th IEEE Photovoltaic Specialists Conference, Honolulu, Hawaii, 2010.
R. Corkish, Luke, K. L., Altermatt, P. P., and Heiser, G., Simulating Electron-Beam-Induced Current Profiles Across p-n Junctions, in Proceedings of the 16h European Solar Energy Conference, Glasgow UK, 2000, pp. 1590-1593.
R. Corkish, Luke, K. L., Altermatt, P. P., and Heiser, G., Simulating Electron-Beam-Induced Current Profiles Across p-n Junctions, 16h European Solar Energy Conference. pp. 1590-1593, 2000.
L. A. Corathers, Minerals Yearbook, Vol. I, Metals & Minerals:. U.S. Government Printing Office, p. 144, 2013.
P. I. Cooper, The absorption of radiation in solar stills, Solar Energy, vol. 12, pp. 333 - 346, 1969.
L. E. Conroy and Park, K. Chang, Electrical properties of the Group IV disulfides, titanium disulfide, zirconium disulfide, hafnium disulfide and tin disulfide, Inorganic Chemistry, vol. 7, no. 3, pp. 459 - 463, 1968.
S. Chen, Gong, X. G., Walsh, A., and Wei, S. - H., Crystal and electronic band structure of Cu2ZnSnX4 (X= S and Se) photovoltaic absorbers: first-principles insights, Applied Physics Letters, vol. 94, p. 41903, 2009.
D. Chauhan, Satsangi, V. R., Dass, S., and Shrivastav, R., Preparation and characterization of nanostructured CuO thin films for photoelectrochemical splitting of water, Bulletin of Materials Science, vol. 29, p. 709, 2006.
D. M. Chapin, Fuller, C. S., and Pearson, G. L., A New Silicon P-N Junction Photocell for Converting Solar Radiation into Electrical Power, Journal of Applied Physics, vol. 25, pp. 676-677, 1954.
R. Chandramohan, Sanjeeviraja, C., and Mahalingam, T., Preparation of Zinc Selenide Thin Films by Electrodeposition Technique for Solar Cell Applications, physica status solidi (a), vol. 163, no. 2, pp. R11 - R12, 1997.
H. C. Card and Yang, E. S., Electronic processes at grain boundaries in polycrystalline semiconductors under optical illumination, IEEE Transactions on Electron Devices, vol. ED-24, pp. 397-402, 1977.
R. Caracas and Gonze, X., First-principles study of the electronic properties of A2B3 minerals, with A=Bi,Sb and B=S,Se, Physics and Chemistry of Minerals, vol. 32, no. 4, pp. 295 - 300, 2005.
P. Campbell and Green, M. A., High performance light trapping textures for monocrystalline silicon solar cells, Solar Energy Materials and Solar Cells, vol. 65, no. 1-4, pp. 369 - 375, 2001.
P. Campbell and Green, M. A., Light trapping properties of pyramidally textured surfaces, Journal of Applied Physics, vol. 62, no. 1, p. 243, 1987.
M. Calixto-Rodriguez, Martinez, H., Sanchez-Juarez, A., Campos-Alvarez, J., Tiburcio-Silver, A., and Calixto, M. E., Structural, optical, and electrical properties of tin sulfide thin films grown by spray pyrolysis, Thin Solid Films, vol. 517, no. 7, pp. 2497 - 2499, 2009.