3.0.CO;2-3
%0 Journal Article
%J Applied Physics Letters
%D 1996
%T Contactless determination of current–voltage characteristics and minority-carrier lifetimes in semiconductors from quasi-steady-state photoconductance data
%A Ronald A. Sinton
%A Andrés Cuevas
%K carrier lifetime
%K CV CHARACTERISTIC
%K MINORITY CARRIERS
%K photoconductivity
%K SEMICONDUCTOR MATERIALS
%K SILICON
%K STEADY – STATE CONDITIONS
%B Applied Physics Letters
%I AIP
%V 69
%P 2510-2512
%G eng
%U http://link.aip.org/link/?APL/69/2510/1
%R 10.1063/1.117723
%0 Journal Article
%J Solar Energy Materials and Solar Cells
%D 1996
%T Texturing of polycrystalline silicon
%A M. J. Stocks
%A A. J. Carr
%A Andrew W Blakers
%B Solar Energy Materials and Solar Cells
%V 40
%P 33 - 42
%G eng
%U http://www.sciencedirect.com/science/article/B6V51-3VTFK7T-57/2/eb36bb8dfafef0de9e83d2f685caf541
%R DOI: 10.1016/0927-0248(95)00077-1
%0 Journal Article
%J Progress in Photovoltaics: Research and Applications
%D 1994
%T 7000 High Efficiency Cells for a Dream
%A Verlinden, P.J.
%A Richard M Swanson
%A Crane, R.A.
%B Progress in Photovoltaics: Research and Applications
%V 2
%P 143 - 152
%G eng
%0 Journal Article
%J Physical Review B
%D 1993
%T Electronic, optical, and structural properties of some wurtzite crystals
%A Xu, Yong-Nian
%A Ching, W.
%B Physical Review B
%V 48
%P 4335 - 4351
%8 Jan-08-1993
%G eng
%U http://link.aps.org/doi/10.1103/PhysRevB.48.4335
%N 7
%! Phys. Rev. B
%R 10.1103/PhysRevB.48.4335
%0 Conference Proceedings
%B Twenty First IEEE Photovoltaic Specialists Conference
%D 1990
%T 18% efficient polycrystalline silicon solar cells
%A Narayanan, S.
%A Zolper, J.
%A Yun, F.
%A Wenham, S.R.
%A A. B. Sproul
%A Chong,C.M.
%A Martin A Green
%B Twenty First IEEE Photovoltaic Specialists Conference
%V 1
%P 678-680
%G eng
%0 Journal Article
%J Journal of Applied Physics
%D 1987
%T Analysis of the interaction of a laser pulse with a silicon wafer: Determination of bulk lifetime and surface recombination velocity
%A Keung L. Luke
%A Li-Jen Cheng
%K carrier lifetime
%K LASERRADIATION HEATING
%K MINORITY CARRIERS
%K RECOMBINATION
%K SILICON
%K SILICON SOLAR CELLS
%K SURFACE PROPERTIES
%K THEORETICAL DATA
%K VELOCITY
%K WAFERS
%B Journal of Applied Physics
%I AIP
%V 61
%P 2282-2293
%G eng
%U http://link.aip.org/link/?JAP/61/2282/1
%R 10.1063/1.337938
%0 Journal Article
%J Journal of Applied Physics
%D 1987
%T Light trapping properties of pyramidally textured surfaces
%A Campbell, Patrick
%A Martin A Green
%B Journal of Applied Physics
%V 62
%P 243
%8 Jan-01-1987
%G eng
%N 1
%! J. Appl. Phys.
%R 10.1063/1.339189
%0 Journal Article
%J Journal of Physics D: Applied Physics
%D 1986
%T The diode quality factor of solar cells under illumination
%A Mialhe, P
%A Charles, J P
%A Khoury, A
%A Bordure, G
%X A review of the methods of determination of solar cell quality factors is discussed from a theoretical point of view; experimental results are compared. Temperature effects, light and bias dependencies of the parameters and the models are considered in order to specify the limits of application of each method.
%B Journal of Physics D: Applied Physics
%V 19
%P 483 - 492
%8 Feb-03-1987
%G eng
%U https://iopscience.iop.org/article/10.1088/0022-3727/19/3/018http://stacks.iop.org/0022-3727/19/i=3/a=018/pdf
%N 3
%! J. Phys. D: Appl. Phys.
%R 10.1088/0022-3727/19/3/018
%0 Journal Article
%J Journal of The Electrochemical Society
%D 1984
%T On the Effect of Impurities on the Photovoltaic Behavior of Solar-Grade Silicon
%A Pizzini, S.
%A Calligarich, C.
%X The electrical and photovoltaic properties of partially compensated p‐type silicon samples have been investigated in order to understand the influence of the contemporaneous presence of donors and acceptors on the behavior of majority and minority carriers. It has been shown that the majority carrier properties are only slightly influenced by the presence of donors in p‐type samples and that the minority carrier properties depend on the excess acceptor concentration up to an excess donor concentration close to Formula . A theoretical explanation of these features has been proposed, on the base of the Shockley‐Read‐Hall model of recombination at shallow traps and donor‐acceptor pairs formation.
%B Journal of The Electrochemical Society
%V 131
%P 2128
%8 Jan-01-1984
%G eng
%U http://jes.ecsdl.org/cgi/doi/10.1149/1.2116033
%N 9
%! J. Electrochem. Soc.
%R 10.1149/1.2116033
%0 Journal Article
%J IEEE TRANSACTIONS ON ELECTRON DEVICES
%D 1984
%T Limiting Efficiency of Silicon Solar Cells
%A T. Tiedje
%A E Yablonovich
%A G.D. Cody
%A B.G. Brooks
%B IEEE TRANSACTIONS ON ELECTRON DEVICES
%V ED-31
%8 05/1984
%G eng
%0 Journal Article
%J IEEE Transactions on Electron Devices
%D 1982
%T Intensity Enhancement in Textured Optical Sheets for Solar Cells
%A E Yablonovich
%A G.D. Cody
%B IEEE Transactions on Electron Devices
%V ED-29
%P 300-305
%G eng
%0 Journal Article
%J Journal of Physics C: Solid State Physics
%D 1979
%T Hall coefficient and reflectivity evidence that TiS 2 is a semiconductor
%A E M Logothetis
%A W J Kaiser
%A C A Kukkonen
%A S P Faile
%A R Colella
%A J Gambold
%X A series of measurements of the Hall coefficient, infrared reflectivity, thermoelectric power and electrical resistivity of Ti 1+x S 2 single crystals with various degrees of stoichiometry is described, where, for the first time, each measurement was made on the same crystal (or crystals from the same batch). None of these measurements taken alone can distinguish between the semimetallic or semiconducting models of TiS 2 . However, by making all four measurements on each sample, it has been possible to establish correlations between the results for different samples. It was found that the product of the Hall coefficient and the square of the plasma frequency is the same for all samples, a result that is consistent with a semiconductor model, but is inconsistent with a semimetal. Nevertheless the most stoichiometric samples remain metallic with electron concentrations of 2*10 20 cm -3 . It was also found that the resistivity data cannot be explained by carrier-carrier or optical phonon scattering. Therefore, both the source of the residual conduction electrons and the scattering mechanism in TiS 2 remain unknown.
%B Journal of Physics C: Solid State Physics
%V 12
%P L521
%G eng
%U http://stacks.iop.org/0022-3719/12/i=13/a=007
%0 Journal Article
%J Journal of Physics C: Solid State Physics
%D 1979
%T Hall coefficient and reflectivity evidence that TiS 2 is a semiconductor
%A Logothetis, E M
%A W J Kaiser
%A Kukkonen, C A
%A S P Faile
%A Colella, R
%A J Gambold
%B Journal of Physics C: Solid State Physics
%V 12
%P L521 - L526
%8 Feb-07-1980
%G eng
%U http://stacks.iop.org/0022-3719/12/i=13/a=007?key=crossref.7b34e84721f0d96f60dce7c3e44ba4c7
%N 13
%! J. Phys. C: Solid State Phys.
%R 10.1088/0022-3719/12/13/007
%0 Generic
%D 1979
%T United States Patent: 4137123 - Texture etching of silicon: method
%A William L. Bailey
%A Michael G. Coleman
%A Cynthia B. Harris
%A Israel A. Lesk
%X A surface etchant for silicon comprising an anisotropic etchant containing silicon is disclosed. The etchant provides a textured surface of randomly spaced and sized pyramids on a silicon surface. It is particularly useful in reducing the reflectivity of solar cell surfaces.
%G eng
%U http://patft.uspto.gov/netacgi/nph-Parser?Sect1=PTO2&Sect2=HITOFF&p=1&u=%2Fnetahtml%2FPTO%2Fsearch-bool.html&r=32&f=G&l=50&co1=AND&d=PTXT&s1=4,137,123&OS=4,137,123&RS=4,137,123
%0 Journal Article
%J IEEE Transactions on Electron Devices
%D 1977
%T Electronic processes at grain boundaries in polycrystalline semiconductors under optical illumination
%A Card, H.C.
%A Yang, E.S.
%B IEEE Transactions on Electron Devices
%V ED-24
%P 397-402
%G eng
%0 Journal Article
%J Solar Energy
%D 1969
%T The absorption of radiation in solar stills
%A P.I. Cooper
%B Solar Energy
%V 12
%P 333 - 346
%G eng
%U http://www.sciencedirect.com/science/article/B6V50-497BD6C-27/2/a4ca2069fe8c8b0cfa571de016d93cc5
%R DOI: 10.1016/0038-092X(69)90047-4
%0 Journal Article
%J Inorganic Chemistry
%D 1968
%T Electrical properties of the Group IV disulfides, titanium disulfide, zirconium disulfide, hafnium disulfide and tin disulfide
%A Conroy, Lawrence E.
%A Park, Kyu Chang
%B Inorganic Chemistry
%V 7
%P 459 - 463
%8 Jan-03-1968
%G eng
%U http://pubs.acs.org/doi/abs/10.1021/ic50061a015
%N 3
%! Inorg. Chem.
%R 10.1021/ic50061a015
%0 Journal Article
%J Physical Review
%D 1968
%T Electroreflectance Measurements on Mg2Si, Mg2Ge, and Mg2Sn
%A Vazquez, F.
%A Forman, Richard
%A Cardona, Manuel
%B Physical Review
%V 176
%P 905 - 908
%8 Jan-12-1968
%G eng
%U http://link.aps.org/doi/10.1103/PhysRev.176.905
%N 3
%! Phys. Rev.
%R 10.1103/PhysRev.176.905
%0 Journal Article
%J IBM Journal of Research Devices
%D 1964
%T Nondestructive determination of thickness and refractive index of transparent films
%A W. A. Pliskin
%A E. E. Conrad
%X A simple nondestructive method of measuring the refractive index and thickness of transparent films on reflective substrates has been developed. The technique involves the use of a microscope equipped with a monochromatic filter on the objective and a stage that can be rotated so that the reflected light is observed at various angles. The film thickness, d, is given by d = {[ΔNλ]/[2µ(cos} r2, - cos r1)], where λ is the wavelength of the filtered light, µ is the refractive index, and {ΔN} is the number of fringes observed between the angles of refraction r2, and r1.
%B IBM Journal of Research Devices
%V 8
%P 43–51
%G eng
%U http://portal.acm.org/citation.cfm?id=1662391
%0 Journal Article
%J Journal of Applied Physics
%D 1954
%T A New Silicon P-N Junction Photocell for Converting Solar Radiation into Electrical Power
%A Chapin, D.M.
%A Fuller, C.S.
%A Pearson, G.L.
%B Journal of Applied Physics
%V 25
%P 676-677
%G eng
%0 Journal Article
%J Zeitschrift für physikalische Chemie
%D 1918
%T Ein neues Verfahren zur Messung der Kristallisationsgeschwindigheit der Metalle
%A Czochralski, J.
%B Zeitschrift für physikalische Chemie
%V 92
%P 219–221
%G eng