%0 Journal Article %J Progress in Photovoltaics: Research and Applications %D 2017 %T Progress in thin film CIGS photovoltaics–Research and development, manufacturing, and applications %A Feurer, Thomas %A Reinhard, Patrick %A Avancini, Enrico %A Bissig, Benjamin %A Löckinger, Johannes %A Fuchs, Peter %A Carron, Romain %A Weiss, Thomas Paul %A Perrenoud, Julian %A Stutterheim, Stephan %A Buecheler, Stephan %A Tiwari, Ayodhya N. %B Progress in Photovoltaics: Research and Applications %V 25 %P 645–667 %G eng %0 Journal Article %J Journal of Applied Physics %D 2016 %T Generalized quantum efficiency analysis for non-ideal solar cells: Case of Cu 2 ZnSnSe 4 %A Charles J. Hages %A Carter, Nathaniel J. %A Rakesh Agrawal %B Journal of Applied Physics %V 119 %P 014505 %8 Jul-01-2016 %G eng %U http://aip.scitation.org/doi/10.1063/1.4939487http://aip.scitation.org/doi/pdf/10.1063/1.4939487 %N 1 %! Journal of Applied Physics %R 10.1063/1.4939487 %0 Journal Article %J Energy Procedia %D 2014 %T The Recombination Parameter J0 %A Andrés Cuevas %X The parameter J0, commonly used in solar cell modelling, has a deep physical meaning, which this paper intends to clarify. Upon examination, J0 can be identified as the recombination current density in thermal equilibrium. In many cases the same equilibrium parameter J0 can be used to describe carrier recombination under external illumination. Nevertheless, when carriers flow from the point where they are generated towards a high recombination site the value of J0 that matters to solar cell operation differs from that in equilibrium. In addition, J0, may in certain cases be dependent on the excess carrier concentration. We conclude by recommending that J0 be referred to as a recombination parameter. %B Energy Procedia %V 55 %P 53 - 62 %8 Jan-01-2014 %G eng %U http://www.sciencedirect.com/science/article/pii/S1876610214012971# %! Energy Procedia %R 10.1016/j.egypro.2014.08.073 %0 Government Document %D 2013 %T Minerals Yearbook, Vol. I, Metals & Minerals: %A Lisa A. Corathers %I U.S. Government Printing Office %P 144 %G eng %U http://minerals.usgs.gov/minerals/pubs/commodity/silicon/mcs-2013-simet.pdf %0 Book Section %B Solar Cells: Materials, Manufacture and Operation %D 2012 %T Cu(In,Ga)Se2 Thin-Film Solar Cells %A Rau, U. %A Schock, H.W. %A Castaner, L %E McEvoy, Augustin %E Markvart, Tom %B Solar Cells: Materials, Manufacture and Operation %I Academic Press %C London %P 262 %G eng %0 Journal Article %J Journal of Nanomaterials %D 2012 %T Facile Synthesis of Colloidal CuO Nanocrystals for Light-Harvesting Applications %A Lim, Yee-Fun %A Choi, Joshua J. %A Hanrath, Tobias %B Journal of Nanomaterials %V 20123312825910287 %P 1 - 6 %8 Jan-01-2012 %G eng %U http://www.hindawi.com/journals/jnm/2012/393160/ %N 710315291 %! Journal of Nanomaterials %R 10.1155/2012/393160 %0 Journal Article %J Physical Review B %D 2012 %T Improved quantitative description of Auger recombination in crystalline silicon %A Richter, Armin %A Stefan W. Glunz %A Werner, Florian %A Jan Schmidt %A Andrés Cuevas %X An accurate quantitative description of the Auger recombination rate in silicon as a function of the dopant density and the carrier injection level is important to understand the physics of this fundamental mechanism and to predict the physical limits to the performance of silicon based devices. Technological progress has permitted a near suppression of competing recombination mechanisms, both in the bulk of the silicon crystal and at the surfaces. This, coupled with advanced characterization techniques, has led to an improved determination of the Auger recombination rate, which is lower than previously thought. In this contribution we present a systematic study of the injection-dependent carrier recombination for a broad range of dopant concentrations of high-purity n-type and p-type silicon wafers passivated with state-of-the-art dielectric layers of aluminum oxide or silicon nitride. Based on these measurements, we develop a general parametrization for intrinsic recombination in crystalline silicon at 300 K consistent with the theory of Coulomb-enhanced Auger and radiative recombination. Based on this improved description we are able to analyze physical aspects of the Auger recombination mechanism such as the Coulomb enhancement. %B Physical Review B %V 86 %8 Jan-10-2012 %G eng %N 16 %! Phys. Rev. B %R 10.1103/PhysRevB.86.165202 %0 Journal Article %J Journal of Materials Science Research %D 2011 %T Fabrication and Characterization of CuO-based Solar Cells %A KIDOWAKI, Hiroki %A OKU, Takeo %A Akiyama, Tsuyoshi %A SUZUKI, Atsushi %A JEYADEVAN, Balachandran %A Cuya, Jhon %B Journal of Materials Science Research %V 1 %8 May-12-2013 %G eng %U http://www.ccsenet.org/journal/index.php/jmsr/article/view/14002 %N 1 %! JMSR %R 10.5539/jmsr.v1n1p138 %0 Conference Paper %B 35th IEEE Photovoltaic Specialists Conference %D 2010 %T Gen III: Improved Performance at Lower Cost %A Peter J. Cousins %A David D. Smith %A Hsin-Chiao Luan %A Jane Manning %A Tim D. Dennis %A Ann Waldhaue %A Karen E. Wilson %A Gabriel Harley %A William P. Mulligan %B 35th IEEE Photovoltaic Specialists Conference %I IEEE %C Honolulu, Hawaii %G eng %0 Journal Article %J Thin Solid Films %D 2009 %T Copper oxide thin film and nanowire as a barrier in ZnO dye-sensitized solar cells %A Raksa, Phathaitep %A Nilphai, Sanpet %A Gardchareon, Atcharawon %A Choopun, Supab %B Thin Solid Films %V 517 %P 4741 - 4744 %8 Jan-07-2009 %G eng %U http://linkinghub.elsevier.com/retrieve/pii/S0040609009004799 %N 17 %! Thin Solid Films %R 10.1016/j.tsf.2009.03.027 %0 Journal Article %J Applied Physics Letters %D 2009 %T Crystal and electronic band structure of Cu2ZnSnX4 (X= S and Se) photovoltaic absorbers: first-principles insights %A Chen, Shiyou %A Gong, XG %A Walsh, Aron %A Wei, Su-Huai %B Applied Physics Letters %V 94 %P 41903 %G eng %0 Journal Article %J Thin Solid Films %D 2009 %T Structural, optical, and electrical properties of tin sulfide thin films grown by spray pyrolysis %A Calixto-Rodriguez, M. %A Martinez, H. %A Sanchez-Juarez, A. %A Campos-Alvarez, J. %A Tiburcio-Silver, A. %A Calixto, M.E. %B Thin Solid Films %V 517 %P 2497 - 2499 %8 Jan-02-2009 %G eng %U http://linkinghub.elsevier.com/retrieve/pii/S0040609008014077http://api.elsevier.com/content/article/PII:S0040609008014077?httpAccept=text/xmlhttp://api.elsevier.com/content/article/PII:S0040609008014077?httpAccept=text/plain %N 7 %! Thin Solid Films %R 10.1016/j.tsf.2008.11.026 %0 Conference Paper %B 2009 34th IEEE Photovoltaic Specialists Conference (PVSC)2009 34th IEEE Photovoltaic Specialists Conference (PVSC) %D 2009 %T Study of SnS:Bi thin films prepared by sulfurization %A Botero, M. %A Bartolo Perez, P. %A Calderon, C. %A Romero, E. %A Gordillo, G. %B 2009 34th IEEE Photovoltaic Specialists Conference (PVSC)2009 34th IEEE Photovoltaic Specialists Conference (PVSC) %I IEEE %C Philadelphia, PA, USA %@ 978-1-4244-2949-3 %G eng %U http://ieeexplore.ieee.org/lpdocs/epic03/wrapper.htm?arnumber=5411154 %R 10.1109/PVSC.2009.5411154 %0 Journal Article %J Journal of The Electrochemical Society %D 2008 %T Electrochemical Impedance Spectroscopy of Synthetic Pyrite Doped with As, Co, and Ni %A Lehner, Stephen %A Ciobanu, Madalina %A Savage, Kaye %A Cliffel, David E. %B Journal of The Electrochemical Society %V 155 %P P61 %8 Jan-01-2008 %G eng %U http://jes.ecsdl.org/cgi/doi/10.1149/1.2885103https://syndication.highwire.org/content/doi/10.1149/1.2885103 %N 5 %! J. Electrochem. Soc. %R 10.1149/1.2885103 %0 Journal Article %D 2007 %T Applied Photovoltaics %A Wenham, S.R. %A Martin A Green %A Watt, M. E. %A R. Corkish %X
%I Earthscan %C London, UK %P 317 %@ 1-84407-401-3 %G eng %U http://www.amazon.com/Applied-Photovoltaics-Stuart-R-Wenham/dp/1844074013/ref=sr_1_1?ie=UTF8&s=books&qid=1279558328&sr=8-1 %0 Journal Article %J International Journal of Coal Geology %D 2007 %T Arsenic in iron disulfides in a brown coal from the North Bohemian Basin, Czech Republic %A Rieder, Milan %A Crelling, John C. %A Šustai, Ondřej %A Drábek, Milan %A Weiss, Zdeněk %A Klementová, Mariana %B International Journal of Coal Geology %V 71 %P 115 - 121 %8 Jan-07-2007 %G eng %U http://linkinghub.elsevier.com/retrieve/pii/S0166516206001480http://api.elsevier.com/content/article/PII:S0166516206001480?httpAccept=text/xmlhttp://api.elsevier.com/content/article/PII:S0166516206001480?httpAccept=text/plain %N 2-3 %! International Journal of Coal Geology %R 10.1016/j.coal.2006.07.003 %0 Conference Proceedings %B 22nd European Photovoltaic Specialist Conference %D 2007 %T Low Cost, High Volume Production of >22% Efficiency Silicon Solar Cells %A De Ceuster, D. %A P. Cousins %A D. Rose %A M. Cudzinovic %A W. Mulligan %B 22nd European Photovoltaic Specialist Conference %G eng %0 Conference Paper %B 4th World Conference on Photovoltaic Energy Conference %D 2006 %T Low Light Performance of Mono-Crystalline Silicon Solar Cells %A Gabriela Bunea %A Karen Wilson %A Yevgeny Meydbray %A Matthew Campbell %A Denis De Ceuster %B 4th World Conference on Photovoltaic Energy Conference %C Waikoloa, HI %P 1312–1314 %8 2006 %G eng %U http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=4059885&tag=1 %R 10.1109/WCPEC.2006.279655 %0 Journal Article %J Bulletin of Materials Science %D 2006 %T Preparation and characterization of nanostructured CuO thin films for photoelectrochemical splitting of water %A Chauhan, Diwakar %A Satsangi, VR %A Dass, Sahab %A Shrivastav, Rohit %B Bulletin of Materials Science %V 29 %P 709 %G eng %0 Journal Article %J Semiconductor Science and Technology %D 2005 %T Annealing effects on the properties of copper oxide thin films prepared by chemical deposition %A Serin, Necmi %A Serin, ülay %A Şeyda Horzum %A Çelik, Yasemin %B Semiconductor Science and Technology %V 20 %P 398 - 401 %8 Jan-05-2005 %G eng %U http://stacks.iop.org/0268-1242/20/i=5/a=012?key=crossref.e80ad675d4be3b601f49e0d1d5cceb0d %N 5 %! Semicond. Sci. Technol. %R 10.1088/0268-1242/20/5/012 %0 Journal Article %J Semiconductor Science and Technology %D 2005 %T Annealing effects on the properties of copper oxide thin films prepared by chemical deposition %A Necmi Serin %A Tülay Serin %A Şeyda Horzum %A Yasemin Çelik %X We have investigated the annealing effect on the structural, optical and electrical properties of copper oxide films prepared on glass substrates by chemical deposition. The films were annealed in air for different temperatures ranging from 200 to 350 °C. X-ray diffraction patterns showed that the films as-deposited and annealed at 200 and 250 °C are of cuprite structure with composition Cu 2 O. Annealing at 300 °C converts these films to CuO. This conversion is accompanied by a shift in the optical band gap from 2.20 eV to 1.35 eV. Also this conversion was obtained by the dc electrical conductivity and FTIR spectroscopy measurements. %B Semiconductor Science and Technology %V 20 %P 398 %G eng %U http://stacks.iop.org/0268-1242/20/i=5/a=012 %0 Journal Article %J physica status solidi (b) %D 2005 %T First-principles calculations of the structural, electronic and optical properties of IIA-IV antifluorite compounds %A Benhelal, O. %A Chahed, A. %A Laksari, S. %A Abbar, B. %A Bouhafs, B. %A Aourag, H. %B physica status solidi (b) %V 242 %P 2022 - 2032 %8 Jan-08-2005 %G eng %U http://doi.wiley.com/10.1002/%28ISSN%291521-3951http://doi.wiley.com/10.1002/pssb.v242:10http://doi.wiley.com/10.1002/pssb.200540063 %N 10 %! phys. stat. sol. (b) %R 10.1002/(ISSN)1521-395110.1002/pssb.v242:1010.1002/pssb.200540063 %0 Journal Article %J Physics and Chemistry of Minerals %D 2005 %T First-principles study of the electronic properties of A2B3 minerals, with A=Bi,Sb and B=S,Se %A Caracas, Razvan %A Gonze, Xavier %X We determine the valence electron density and the electron band structure of stibnite, bismutinite, guanajuatite and antimonelite using the density functional theory. All the compounds present similar electronic properties and exhibit a quasi-1D character. We perform a detailed analysis of the charge topology, the atomic static charges and volumes. %B Physics and Chemistry of Minerals %V 32 %P 295 - 300 %8 Jan-07-2005 %G eng %U http://rruff.geo.arizona.edu/AMS/authors/Caracas%20R %N 4 %! Phys Chem Minerals %R 10.1007/s00269-005-0470-y %0 Conference Proceedings %B 13th Workshop on Crystalline Silicon Solar Cell Materials and Processes %D 2003 %T Dependence of aluminium alloying on solar cell processing conditions %A Christiana B Honsberg %A Anwar, K.K. %A Mehrvarz, H.R. %A Cotter, J.E. %A Wenham, S.R. %B 13th Workshop on Crystalline Silicon Solar Cell Materials and Processes %G eng %0 Journal Article %J Journal of Applied Physics %D 2002 %T General parameterization of Auger recombination in crystalline silicon %A Mark J Kerr %A Andrés Cuevas %K Auger effect %K carrier lifetime %K electron-hole recombination %K elemental semiconductors %K SILICON %B Journal of Applied Physics %I AIP %V 91 %P 2473-2480 %G eng %U http://link.aip.org/link/?JAP/91/2473/1 %R 10.1063/1.1432476 %0 Journal Article %J Journal of Applied Physics %D 2002 %T Generalized analysis of quasi-steady-state and transient decay open circuit voltage measurements %A Mark J Kerr %A Andrés Cuevas %A Ronald A. Sinton %X The current–voltage characteristics of solar cells and photodiodes can be determined by measuring the open-circuit voltage as a function of a slowly varying light intensity. This article presents a detailed theoretical analysis and interpretation of such quasi-steady-state Voc measurements (QssVoc). The ability of this analysis to accurately obtain the true steady-state device characteristics even in the case of high lifetime, high resistivity silicon devices is demonstrated experimentally. The QssVoc technique can be used to determine the minority carrier lifetime, and the new generalized analysis is required to do this accurately. An important outcome is that solar cell and diode device characteristics can be obtained from measurements of either the photoconductance or the open-circuit voltage, even using transient techniques. %B Journal of Applied Physics %V 91 %P 399 %8 2002 %G eng %R 10.1063/1.1416134 %0 Book %D 2002 %T Materials handbook: [foundation for the science of metallurgy; compares the advantages and disadvantages of different manufacturing processes; comprehensive in approach]. %A Brady, George S %A Clauser, Henry R %A Vaccari, John A %I {McGraw-Hill} %C New York [u.a.] %@ {007136076X} 9780071360760 %G eng %U http://www.scribd.com/doc/6395226/Materials-Handboook %0 Journal Article %J Solar Energy Materials and Solar Cells %D 2001 %T High performance light trapping textures for monocrystalline silicon solar cells %A Campbell, Patrick %A Martin A Green %X Two novel texture schemes for the front of a c-Si silicon wafer solar cell are presented. The “bipyramid” texture is of two inverted pyramids of similar sizes laid out in alternating order. The “patch” texture uses a checkerboard layout of blocks of parallel grooves, with the grooves of alternating blocks perpendicularly oriented to each other. We estimate that these textures, which almost fully trap light for the first six passes through the substrate, can deliver better optical performance than the standard inverted pyramid texture, especially in narrow-band applications. %B Solar Energy Materials and Solar Cells %V 65 %P 369 - 375 %8 Jan-01-2001 %G eng %N 1-4 %! Solar Energy Materials and Solar Cells %R 10.1016/S0927-0248(00)00115-X %0 Conference Proceedings %B 17th European Photovoltaic Solar Energy Conference %D 2001 %T A New Generalized Detailed Balance Formulation to Calculate Solar Cell Efficiency Limits %A Christiana B Honsberg %A R. Corkish %A S. P. Bremner %B 17th European Photovoltaic Solar Energy Conference %P 22-26 %G eng %0 Journal Article %J Journal of Applied Physics %D 2001 %T On the use of a bias-light correction for trapping effects in photoconductance-based lifetime measurements of silicon %A Daniel Macdonald %A Ronald A. Sinton %A Andrés Cuevas %K CARRIER DENSITY %K carrier lifetime %K electron traps %K electron-hole recombination %K elemental semiconductors %K hole traps %K photoconductivity %K SILICON %K solar cells %B Journal of Applied Physics %I AIP %V 89 %P 2772-2778 %G eng %U http://link.aip.org/link/?JAP/89/2772/1 %R 10.1063/1.1346652 %0 Journal Article %J Thin Solid Films %D 2000 %T Photoelectrochemical properties of copper oxide thin films coated on an n-Si substrate %A Ki Hyun Yoon %A Woo Jin Choi %A Dong Heon Kang %K XPS %X The photoelectrochemical properties of the copper oxide thin film coated on the n-type silicon electrode were investigated as a function of film deposition temperature. The variation in the deposition temperature affected the film morphology and the ratio of copper to oxygen. In case of the films deposited below 200°C, the main phase was found to be CuO while the amount of the Cu2O phase increased with further increases in deposition temperature. The n-silicon photoelectrode showed enhanced photocurrent–potential (I–V) properties by forming a copper oxide/n-silicon heterojunction. In particular, the electrode, which mainly consisted of a CuO phase, showed better photoelectrochemical conversion efficiencies compared to the Cu2O phase. This result was explained in terms of the electrical conductance and transmittance of the copper oxide film. %B Thin Solid Films %V 372 %P 250 - 256 %G eng %U http://www.sciencedirect.com/science/article/pii/S0040609000010580 %R http://dx.doi.org/10.1016/S0040-6090(00)01058-0 %0 Conference Paper %B 16th European Photovoltaic Solar Energy Conference %D 2000 %T A Quasi-Steady-State Open-Circuit Voltage Method for Solar Cell Characterization %A Sinton, R.A. %A Andrés Cuevas %B 16th European Photovoltaic Solar Energy Conference %C Glasgow, Scotland %P 1152–1155 %8 05/2000 %G eng %0 Conference Paper %B Proceedings of the 16h European Solar Energy Conference %D 2000 %T Simulating Electron-Beam-Induced Current Profiles Across p-n Junctions %A R. Corkish %A Luke, K. L. %A Pietro P Altermatt %A G. Heiser %B Proceedings of the 16h European Solar Energy Conference %I James and James %C Glasgow UK %P 1590-1593 %8 1-5 May 2000 %@ 9781902916187 %G eng %0 Conference Proceedings %B 16h European Solar Energy Conference %D 2000 %T Simulating Electron-Beam-Induced Current Profiles Across p-n Junctions %A R. Corkish %A Luke, K. L. %A Pietro P Altermatt %A G. Heiser %B 16h European Solar Energy Conference %P 1590-1593 %G eng %0 Journal Article %J physica status solidi (a) %D 1997 %T Preparation of Zinc Selenide Thin Films by Electrodeposition Technique for Solar Cell Applications %A Chandramohan, R. %A Sanjeeviraja, C. %A Mahalingam, T. %B physica status solidi (a) %V 163 %P R11 - R12 %8 Jan-10-1997 %G eng %N 2 %! phys. stat. sol. (a) %R 10.1002/(ISSN)1521-396X10.1002/1521-396X(199710)163:2<>1.0.CO;2-U10.1002/1521-396X(199710)163:23.0.CO;2-3 %0 Journal Article %J Applied Physics Letters %D 1996 %T Contactless determination of current–voltage characteristics and minority-carrier lifetimes in semiconductors from quasi-steady-state photoconductance data %A Ronald A. Sinton %A Andrés Cuevas %K carrier lifetime %K CV CHARACTERISTIC %K MINORITY CARRIERS %K photoconductivity %K SEMICONDUCTOR MATERIALS %K SILICON %K STEADY – STATE CONDITIONS %B Applied Physics Letters %I AIP %V 69 %P 2510-2512 %G eng %U http://link.aip.org/link/?APL/69/2510/1 %R 10.1063/1.117723 %0 Journal Article %J Solar Energy Materials and Solar Cells %D 1996 %T Texturing of polycrystalline silicon %A M. J. Stocks %A A. J. Carr %A Andrew W Blakers %B Solar Energy Materials and Solar Cells %V 40 %P 33 - 42 %G eng %U http://www.sciencedirect.com/science/article/B6V51-3VTFK7T-57/2/eb36bb8dfafef0de9e83d2f685caf541 %R DOI: 10.1016/0927-0248(95)00077-1 %0 Journal Article %J Progress in Photovoltaics: Research and Applications %D 1994 %T 7000 High Efficiency Cells for a Dream %A Verlinden, P.J. %A Richard M Swanson %A Crane, R.A. %B Progress in Photovoltaics: Research and Applications %V 2 %P 143 - 152 %G eng %0 Journal Article %J Physical Review B %D 1993 %T Electronic, optical, and structural properties of some wurtzite crystals %A Xu, Yong-Nian %A Ching, W. %B Physical Review B %V 48 %P 4335 - 4351 %8 Jan-08-1993 %G eng %U http://link.aps.org/doi/10.1103/PhysRevB.48.4335 %N 7 %! Phys. Rev. B %R 10.1103/PhysRevB.48.4335 %0 Conference Proceedings %B Twenty First IEEE Photovoltaic Specialists Conference %D 1990 %T 18% efficient polycrystalline silicon solar cells %A Narayanan, S. %A Zolper, J. %A Yun, F. %A Wenham, S.R. %A A. B. Sproul %A Chong,C.M. %A Martin A Green %B Twenty First IEEE Photovoltaic Specialists Conference %V 1 %P 678-680 %G eng %0 Journal Article %J Journal of Applied Physics %D 1987 %T Analysis of the interaction of a laser pulse with a silicon wafer: Determination of bulk lifetime and surface recombination velocity %A Keung L. Luke %A Li-Jen Cheng %K carrier lifetime %K LASERRADIATION HEATING %K MINORITY CARRIERS %K RECOMBINATION %K SILICON %K SILICON SOLAR CELLS %K SURFACE PROPERTIES %K THEORETICAL DATA %K VELOCITY %K WAFERS %B Journal of Applied Physics %I AIP %V 61 %P 2282-2293 %G eng %U http://link.aip.org/link/?JAP/61/2282/1 %R 10.1063/1.337938 %0 Journal Article %J Journal of Applied Physics %D 1987 %T Light trapping properties of pyramidally textured surfaces %A Campbell, Patrick %A Martin A Green %B Journal of Applied Physics %V 62 %P 243 %8 Jan-01-1987 %G eng %N 1 %! J. Appl. Phys. %R 10.1063/1.339189 %0 Journal Article %J Journal of Physics D: Applied Physics %D 1986 %T The diode quality factor of solar cells under illumination %A Mialhe, P %A Charles, J P %A Khoury, A %A Bordure, G %X A review of the methods of determination of solar cell quality factors is discussed from a theoretical point of view; experimental results are compared. Temperature effects, light and bias dependencies of the parameters and the models are considered in order to specify the limits of application of each method. %B Journal of Physics D: Applied Physics %V 19 %P 483 - 492 %8 Feb-03-1987 %G eng %U https://iopscience.iop.org/article/10.1088/0022-3727/19/3/018http://stacks.iop.org/0022-3727/19/i=3/a=018/pdf %N 3 %! J. Phys. D: Appl. Phys. %R 10.1088/0022-3727/19/3/018 %0 Journal Article %J Journal of The Electrochemical Society %D 1984 %T On the Effect of Impurities on the Photovoltaic Behavior of Solar-Grade Silicon %A Pizzini, S. %A Calligarich, C. %X The electrical and photovoltaic properties of partially compensated p‐type silicon samples have been investigated in order to understand the influence of the contemporaneous presence of donors and acceptors on the behavior of majority and minority carriers. It has been shown that the majority carrier properties are only slightly influenced by the presence of donors in p‐type samples and that the minority carrier properties depend on the excess acceptor concentration up to an excess donor concentration close to Formula . A theoretical explanation of these features has been proposed, on the base of the Shockley‐Read‐Hall model of recombination at shallow traps and donor‐acceptor pairs formation. %B Journal of The Electrochemical Society %V 131 %P 2128 %8 Jan-01-1984 %G eng %U http://jes.ecsdl.org/cgi/doi/10.1149/1.2116033 %N 9 %! J. Electrochem. Soc. %R 10.1149/1.2116033 %0 Journal Article %J IEEE TRANSACTIONS ON ELECTRON DEVICES %D 1984 %T Limiting Efficiency of Silicon Solar Cells %A T. Tiedje %A E Yablonovich %A G.D. Cody %A B.G. Brooks %B IEEE TRANSACTIONS ON ELECTRON DEVICES %V ED-31 %8 05/1984 %G eng %0 Journal Article %J IEEE Transactions on Electron Devices %D 1982 %T Intensity Enhancement in Textured Optical Sheets for Solar Cells %A E Yablonovich %A G.D. Cody %B IEEE Transactions on Electron Devices %V ED-29 %P 300-305 %G eng %0 Journal Article %J Journal of Physics C: Solid State Physics %D 1979 %T Hall coefficient and reflectivity evidence that TiS 2 is a semiconductor %A E M Logothetis %A W J Kaiser %A C A Kukkonen %A S P Faile %A R Colella %A J Gambold %X A series of measurements of the Hall coefficient, infrared reflectivity, thermoelectric power and electrical resistivity of Ti 1+x S 2 single crystals with various degrees of stoichiometry is described, where, for the first time, each measurement was made on the same crystal (or crystals from the same batch). None of these measurements taken alone can distinguish between the semimetallic or semiconducting models of TiS 2 . However, by making all four measurements on each sample, it has been possible to establish correlations between the results for different samples. It was found that the product of the Hall coefficient and the square of the plasma frequency is the same for all samples, a result that is consistent with a semiconductor model, but is inconsistent with a semimetal. Nevertheless the most stoichiometric samples remain metallic with electron concentrations of 2*10 20 cm -3 . It was also found that the resistivity data cannot be explained by carrier-carrier or optical phonon scattering. Therefore, both the source of the residual conduction electrons and the scattering mechanism in TiS 2 remain unknown. %B Journal of Physics C: Solid State Physics %V 12 %P L521 %G eng %U http://stacks.iop.org/0022-3719/12/i=13/a=007 %0 Journal Article %J Journal of Physics C: Solid State Physics %D 1979 %T Hall coefficient and reflectivity evidence that TiS 2 is a semiconductor %A Logothetis, E M %A W J Kaiser %A Kukkonen, C A %A S P Faile %A Colella, R %A J Gambold %B Journal of Physics C: Solid State Physics %V 12 %P L521 - L526 %8 Feb-07-1980 %G eng %U http://stacks.iop.org/0022-3719/12/i=13/a=007?key=crossref.7b34e84721f0d96f60dce7c3e44ba4c7 %N 13 %! J. Phys. C: Solid State Phys. %R 10.1088/0022-3719/12/13/007 %0 Generic %D 1979 %T United States Patent: 4137123 - Texture etching of silicon: method %A William L. Bailey %A Michael G. Coleman %A Cynthia B. Harris %A Israel A. Lesk %X

A surface etchant for silicon comprising an anisotropic etchant containing silicon is disclosed. The etchant provides a textured surface of randomly spaced and sized pyramids on a silicon surface. It is particularly useful in reducing the reflectivity of solar cell surfaces.

%G eng %U http://patft.uspto.gov/netacgi/nph-Parser?Sect1=PTO2&Sect2=HITOFF&p=1&u=%2Fnetahtml%2FPTO%2Fsearch-bool.html&r=32&f=G&l=50&co1=AND&d=PTXT&s1=4,137,123&OS=4,137,123&RS=4,137,123 %0 Journal Article %J IEEE Transactions on Electron Devices %D 1977 %T Electronic processes at grain boundaries in polycrystalline semiconductors under optical illumination %A Card, H.C. %A Yang, E.S. %B IEEE Transactions on Electron Devices %V ED-24 %P 397-402 %G eng %0 Journal Article %J Solar Energy %D 1969 %T The absorption of radiation in solar stills %A P.I. Cooper %B Solar Energy %V 12 %P 333 - 346 %G eng %U http://www.sciencedirect.com/science/article/B6V50-497BD6C-27/2/a4ca2069fe8c8b0cfa571de016d93cc5 %R DOI: 10.1016/0038-092X(69)90047-4 %0 Journal Article %J Inorganic Chemistry %D 1968 %T Electrical properties of the Group IV disulfides, titanium disulfide, zirconium disulfide, hafnium disulfide and tin disulfide %A Conroy, Lawrence E. %A Park, Kyu Chang %B Inorganic Chemistry %V 7 %P 459 - 463 %8 Jan-03-1968 %G eng %U http://pubs.acs.org/doi/abs/10.1021/ic50061a015 %N 3 %! Inorg. Chem. %R 10.1021/ic50061a015 %0 Journal Article %J Physical Review %D 1968 %T Electroreflectance Measurements on Mg2Si, Mg2Ge, and Mg2Sn %A Vazquez, F. %A Forman, Richard %A Cardona, Manuel %B Physical Review %V 176 %P 905 - 908 %8 Jan-12-1968 %G eng %U http://link.aps.org/doi/10.1103/PhysRev.176.905 %N 3 %! Phys. Rev. %R 10.1103/PhysRev.176.905 %0 Journal Article %J IBM Journal of Research Devices %D 1964 %T Nondestructive determination of thickness and refractive index of transparent films %A W. A. Pliskin %A E. E. Conrad %X

A simple nondestructive method of measuring the refractive index and thickness of transparent films on reflective substrates has been developed. The technique involves the use of a microscope equipped with a monochromatic filter on the objective and a stage that can be rotated so that the reflected light is observed at various angles. The film thickness, d, is given by d = {[ΔNλ]/[2µ(cos} r2, - cos r1)], where λ is the wavelength of the filtered light, µ is the refractive index, and {ΔN} is the number of fringes observed between the angles of refraction r2, and r1.

%B IBM Journal of Research Devices %V 8 %P 43–51 %G eng %U http://portal.acm.org/citation.cfm?id=1662391 %0 Journal Article %J Journal of Applied Physics %D 1954 %T A New Silicon P-N Junction Photocell for Converting Solar Radiation into Electrical Power %A Chapin, D.M. %A Fuller, C.S. %A Pearson, G.L. %B Journal of Applied Physics %V 25 %P 676-677 %G eng %0 Journal Article %J Zeitschrift für physikalische Chemie %D 1918 %T Ein neues Verfahren zur Messung der Kristallisationsgeschwindigheit der Metalle %A Czochralski, J. %B Zeitschrift für physikalische Chemie %V 92 %P 219–221 %G eng