The ingot growth for Multicrystalline silicon is quite simple, melt the silicon in a large crucible and let it cool slowly to form a large crystal. The specifics of furnace design allows the ingot to cool slowly so that very large grains (> 1 cm) are formed.
Tub used for growing silicon. The dimensions are about 50 cm x 50 cm x 25 cm deep. The tub has to withstand the melting point of silicon at 1415 °C. For comparison iron melts at 1538 °C.
Crystal growing furnaces. The system is loaded and unloaded using the hoists at the bottom.
Loading the growth tub into the furnace.
Finished silicon ingot.