@article {feurer2017progress, title = {Progress in thin film CIGS photovoltaics{\textendash}Research and development, manufacturing, and applications}, journal = {Progress in Photovoltaics: Research and Applications}, volume = {25}, year = {2017}, pages = {645{\textendash}667}, author = {Feurer, Thomas and Reinhard, Patrick and Avancini, Enrico and Bissig, Benjamin and L{\"o}ckinger, Johannes and Fuchs, Peter and Carron, Romain and Weiss, Thomas Paul and Perrenoud, Julian and Stutterheim, Stephan and Buecheler, Stephan and Tiwari, Ayodhya N.} } @article {Hages2016, title = {Generalized quantum efficiency analysis for non-ideal solar cells: Case of Cu 2 ZnSnSe 4}, journal = {Journal of Applied Physics}, volume = {119}, year = {2016}, month = {Jul-01-2016}, pages = {014505}, issn = {0021-8979}, doi = {10.1063/1.4939487}, url = {http://aip.scitation.org/doi/10.1063/1.4939487http://aip.scitation.org/doi/pdf/10.1063/1.4939487}, author = {Charles J. Hages and Carter, Nathaniel J. and Rakesh Agrawal} } @article {Cuevas2014, title = {The Recombination Parameter J0}, journal = {Energy Procedia}, volume = {55}, year = {2014}, month = {Jan-01-2014}, pages = {53 - 62}, abstract = {The parameter J0, commonly used in solar cell modelling, has a deep physical meaning, which this paper intends to clarify. Upon examination, J0 can be identified as the recombination current density in thermal equilibrium. In many cases the same equilibrium parameter J0 can be used to describe carrier recombination under external illumination. Nevertheless, when carriers flow from the point where they are generated towards a high recombination site the value of J0 that matters to solar cell operation differs from that in equilibrium. In addition, J0, may in certain cases be dependent on the excess carrier concentration. We conclude by recommending that J0 be referred to as a recombination parameter.}, issn = {18766102}, doi = {10.1016/j.egypro.2014.08.073}, url = {http://www.sciencedirect.com/science/article/pii/S1876610214012971$\#$}, author = {Andr{\'e}s Cuevas} } @article {usgs_silicon_2013, title = {Minerals Yearbook, Vol. I, Metals \& Minerals:}, year = {2013}, pages = {144}, publisher = {U.S. Government Printing Office}, url = {http://minerals.usgs.gov/minerals/pubs/commodity/silicon/mcs-2013-simet.pdf}, author = {Lisa A. Corathers} } @inbook {mcevoy2012solar, title = {Cu(In,Ga)Se2 Thin-Film Solar Cells}, booktitle = {Solar Cells: Materials, Manufacture and Operation}, year = {2012}, pages = {262}, publisher = {Academic Press}, organization = {Academic Press}, address = {London}, author = {Rau, U. and Schock, H.W. and Castaner, L}, editor = {McEvoy, Augustin and Markvart, Tom} } @article {Lim2012, title = {Facile Synthesis of Colloidal CuO Nanocrystals for Light-Harvesting Applications}, journal = {Journal of Nanomaterials}, volume = {20123312825910287}, year = {2012}, month = {Jan-01-2012}, pages = {1 - 6}, issn = {1687-4110}, doi = {10.1155/2012/393160}, url = {http://www.hindawi.com/journals/jnm/2012/393160/}, author = {Lim, Yee-Fun and Choi, Joshua J. and Hanrath, Tobias} } @article {Richter2012, title = {Improved quantitative description of Auger recombination in crystalline silicon}, journal = {Physical Review B}, volume = {86}, year = {2012}, month = {Jan-10-2012}, abstract = {An accurate quantitative description of the Auger recombination rate in silicon as a function of the dopant density and the carrier injection level is important to understand the physics of this fundamental mechanism and to predict the physical limits to the performance of silicon based devices. Technological progress has permitted a near suppression of competing recombination mechanisms, both in the bulk of the silicon crystal and at the surfaces. This, coupled with advanced characterization techniques, has led to an improved determination of the Auger recombination rate, which is lower than previously thought. In this contribution we present a systematic study of the injection-dependent carrier recombination for a broad range of dopant concentrations of high-purity n-type and p-type silicon wafers passivated with state-of-the-art dielectric layers of aluminum oxide or silicon nitride. Based on these measurements, we develop a general parametrization for intrinsic recombination in crystalline silicon at 300 K consistent with the theory of Coulomb-enhanced Auger and radiative recombination. Based on this improved description we are able to analyze physical aspects of the Auger recombination mechanism such as the Coulomb enhancement.}, issn = {1098-0121}, doi = {10.1103/PhysRevB.86.165202}, author = {Richter, Armin and Stefan W. Glunz and Werner, Florian and Jan Schmidt and Andr{\'e}s Cuevas} } @article {Kidowaki2011, title = {Fabrication and Characterization of CuO-based Solar Cells}, journal = {Journal of Materials Science Research}, volume = {1}, year = {2011}, month = {May-12-2013}, issn = {1927-0585}, doi = {10.5539/jmsr.v1n1p138}, url = {http://www.ccsenet.org/journal/index.php/jmsr/article/view/14002}, author = {KIDOWAKI, Hiroki and OKU, Takeo and Akiyama, Tsuyoshi and SUZUKI, Atsushi and JEYADEVAN, Balachandran and Cuya, Jhon} } @conference {Cousins2010, title = {Gen III: Improved Performance at Lower Cost}, booktitle = {35th IEEE Photovoltaic Specialists Conference}, year = {2010}, note = {
}, publisher = {IEEE}, organization = {IEEE}, address = {Honolulu, Hawaii}, author = {Peter J. Cousins and David D. Smith and Hsin-Chiao Luan and Jane Manning and Tim D. Dennis and Ann Waldhaue and Karen E. Wilson and Gabriel Harley and William P. Mulligan} } @article {Raksa2009, title = {Copper oxide thin film and nanowire as a barrier in ZnO dye-sensitized solar cells}, journal = {Thin Solid Films}, volume = {517}, year = {2009}, month = {Jan-07-2009}, pages = {4741 - 4744}, issn = {00406090}, doi = {10.1016/j.tsf.2009.03.027}, url = {http://linkinghub.elsevier.com/retrieve/pii/S0040609009004799}, author = {Raksa, Phathaitep and Nilphai, Sanpet and Gardchareon, Atcharawon and Choopun, Supab} } @article {chen2009crystal, title = {Crystal and electronic band structure of Cu2ZnSnX4 (X= S and Se) photovoltaic absorbers: first-principles insights}, journal = {Applied Physics Letters}, volume = {94}, year = {2009}, pages = {41903}, author = {Chen, Shiyou and Gong, XG and Walsh, Aron and Wei, Su-Huai} } @article {Calixto2009, title = {Structural, optical, and electrical properties of tin sulfide thin films grown by spray pyrolysis}, journal = {Thin Solid Films}, volume = {517}, year = {2009}, month = {Jan-02-2009}, pages = {2497 - 2499}, issn = {00406090}, doi = {10.1016/j.tsf.2008.11.026}, url = {http://linkinghub.elsevier.com/retrieve/pii/S0040609008014077http://api.elsevier.com/content/article/PII:S0040609008014077?httpAccept=text/xmlhttp://api.elsevier.com/content/article/PII:S0040609008014077?httpAccept=text/plain}, author = {Calixto-Rodriguez, M. and Martinez, H. and Sanchez-Juarez, A. and Campos-Alvarez, J. and Tiburcio-Silver, A. and Calixto, M.E.} } @conference {Botero2009, title = {Study of SnS:Bi thin films prepared by sulfurization}, booktitle = {2009 34th IEEE Photovoltaic Specialists Conference (PVSC)2009 34th IEEE Photovoltaic Specialists Conference (PVSC)}, year = {2009}, publisher = {IEEE}, organization = {IEEE}, address = {Philadelphia, PA, USA}, isbn = {978-1-4244-2949-3}, doi = {10.1109/PVSC.2009.5411154}, url = {http://ieeexplore.ieee.org/lpdocs/epic03/wrapper.htm?arnumber=5411154}, author = {Botero, M. and Bartolo Perez, P. and Calderon, C. and Romero, E. and Gordillo, G.} } @article {lehner2008, title = {Electrochemical Impedance Spectroscopy of Synthetic Pyrite Doped with As, Co, and Ni}, journal = {Journal of The Electrochemical Society}, volume = {155}, year = {2008}, month = {Jan-01-2008}, pages = {P61}, issn = {00134651}, doi = {10.1149/1.2885103}, url = {http://jes.ecsdl.org/cgi/doi/10.1149/1.2885103https://syndication.highwire.org/content/doi/10.1149/1.2885103}, author = {Lehner, Stephen and Ciobanu, Madalina and Savage, Kaye and Cliffel, David E.} } @article {Wenham2007, title = {Applied Photovoltaics}, year = {2007}, note = {

Introduction

1. The Characteristics of Sunlight

2. Semiconductors and P-N Junctions

3. The Behavior of Solar Cells

4. Cell Properties and Design

5. PV Cell Interconnection and Module Fabrication

6. Stand-Alone Photovoltaic System Components

7. Designing Stand-Alone Photovoltaic Systems

8. Specific Purpose Photovoltaic Applications

9. Remote Area Power Supply Systems

10. Grid-Connected Photovoltaic Systems

11. Photovoltaic Water Pumping System Components

12. PV Water Pumping System Design

Appendicies

Index

}, pages = {317}, publisher = {Earthscan}, address = {London, UK}, abstract = {
}, isbn = {1-84407-401-3}, url = {http://www.amazon.com/Applied-Photovoltaics-Stuart-R-Wenham/dp/1844074013/ref=sr_1_1?ie=UTF8\&s=books\&qid=1279558328\&sr=8-1}, author = {Wenham, S.R. and Martin A Green and Watt, M. E. and R. Corkish} } @article {rieder2007, title = {Arsenic in iron disulfides in a brown coal from the North Bohemian Basin, Czech Republic}, journal = {International Journal of Coal Geology}, volume = {71}, year = {2007}, month = {Jan-07-2007}, pages = {115 - 121}, issn = {01665162}, doi = {10.1016/j.coal.2006.07.003}, url = {http://linkinghub.elsevier.com/retrieve/pii/S0166516206001480http://api.elsevier.com/content/article/PII:S0166516206001480?httpAccept=text/xmlhttp://api.elsevier.com/content/article/PII:S0166516206001480?httpAccept=text/plain}, author = {Rieder, Milan and Crelling, John C. and {\v S}ustai, Ond{\v r}ej and Dr{\'a}bek, Milan and Weiss, Zden{\v e}k and Klementov{\'a}, Mariana} } @proceedings {DeCeuster2007, title = {Low Cost, High Volume Production of >22\% Efficiency Silicon Solar Cells}, year = {2007}, note = {
}, author = {De Ceuster, D. and P. Cousins and D. Rose and M. Cudzinovic and W. Mulligan} } @conference {bunea_low_2006, title = {Low Light Performance of Mono-Crystalline Silicon Solar Cells}, booktitle = {4th World Conference on Photovoltaic Energy Conference}, year = {2006}, month = {2006}, pages = {1312{\textendash}1314}, address = {Waikoloa, HI}, doi = {10.1109/WCPEC.2006.279655}, url = {http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=4059885\&tag=1}, author = {Gabriela Bunea and Karen Wilson and Yevgeny Meydbray and Matthew Campbell and Denis De Ceuster} } @article {Chauhan2006, title = {Preparation and characterization of nanostructured CuO thin films for photoelectrochemical splitting of water}, journal = {Bulletin of Materials Science}, volume = {29}, year = {2006}, pages = {709}, author = {Chauhan, Diwakar and Satsangi, VR and Dass, Sahab and Shrivastav, Rohit} } @article {Serin2005, title = {Annealing effects on the properties of copper oxide thin films prepared by chemical deposition}, journal = {Semiconductor Science and Technology}, volume = {20}, year = {2005}, month = {Jan-05-2005}, pages = {398 - 401}, issn = {0268-1242}, doi = {10.1088/0268-1242/20/5/012}, url = {http://stacks.iop.org/0268-1242/20/i=5/a=012?key=crossref.e80ad675d4be3b601f49e0d1d5cceb0d}, author = {Serin, Necmi and Serin, {\"u}lay and {\c S}eyda Horzum and {\c C}elik, Yasemin} } @article {Serin2005, title = {Annealing effects on the properties of copper oxide thin films prepared by chemical deposition}, journal = {Semiconductor Science and Technology}, volume = {20}, year = {2005}, pages = {398}, abstract = {We have investigated the annealing effect on the structural, optical and electrical properties of copper oxide films prepared on glass substrates by chemical deposition. The films were annealed in air for different temperatures ranging from 200 to 350 {\textdegree}C. X-ray diffraction patterns showed that the films as-deposited and annealed at 200 and 250 {\textdegree}C are of cuprite structure with composition Cu 2 O. Annealing at 300 {\textdegree}C converts these films to CuO. This conversion is accompanied by a shift in the optical band gap from 2.20 eV to 1.35 eV. Also this conversion was obtained by the dc electrical conductivity and FTIR spectroscopy measurements.}, url = {http://stacks.iop.org/0268-1242/20/i=5/a=012}, author = {Necmi Serin and T{\"u}lay Serin and {\c S}eyda Horzum and Yasemin {\c C}elik} } @article {Benhelal2005, title = {First-principles calculations of the structural, electronic and optical properties of IIA-IV antifluorite compounds}, journal = {physica status solidi (b)}, volume = {242}, year = {2005}, month = {Jan-08-2005}, pages = {2022 - 2032}, issn = {0370-1972}, doi = {10.1002/(ISSN)1521-395110.1002/pssb.v242:1010.1002/pssb.200540063}, url = {http://doi.wiley.com/10.1002/\%28ISSN\%291521-3951http://doi.wiley.com/10.1002/pssb.v242:10http://doi.wiley.com/10.1002/pssb.200540063}, author = {Benhelal, O. and Chahed, A. and Laksari, S. and Abbar, B. and Bouhafs, B. and Aourag, H.} } @article {Caracas2005, title = {First-principles study of the electronic properties of A2B3 minerals, with A=Bi,Sb and B=S,Se}, journal = {Physics and Chemistry of Minerals}, volume = {32}, year = {2005}, month = {Jan-07-2005}, pages = {295 - 300}, abstract = {We determine the valence electron density and the electron band structure of stibnite, bismutinite, guanajuatite and antimonelite using the density functional theory. All the compounds present similar electronic properties and exhibit a quasi-1D character. We perform a detailed analysis of the charge topology, the atomic static charges and volumes.}, issn = {0342-1791}, doi = {10.1007/s00269-005-0470-y}, url = {http://rruff.geo.arizona.edu/AMS/authors/Caracas\%20R}, author = {Caracas, Razvan and Gonze, Xavier} } @proceedings {Honsberg2003, title = {Dependence of aluminium alloying on solar cell processing conditions}, year = {2003}, note = {
}, author = {Christiana B Honsberg and Anwar, K.K. and Mehrvarz, H.R. and Cotter, J.E. and Wenham, S.R.} } @article {Kerr2002, title = {General parameterization of Auger recombination in crystalline silicon}, journal = {Journal of Applied Physics}, volume = {91}, number = {4}, year = {2002}, pages = {2473-2480}, publisher = {AIP}, keywords = {Auger effect, carrier lifetime, electron-hole recombination, elemental semiconductors, SILICON}, doi = {10.1063/1.1432476}, url = {http://link.aip.org/link/?JAP/91/2473/1}, author = {Mark J Kerr and Andr{\'e}s Cuevas} } @article {Kerr2002, title = {Generalized analysis of quasi-steady-state and transient decay open circuit voltage measurements}, journal = {Journal of Applied Physics}, volume = {91}, year = {2002}, note = {
}, month = {2002}, pages = {399}, abstract = {The current{\textendash}voltage characteristics of solar cells and photodiodes can be determined by measuring the open-circuit voltage as a function of a slowly varying light intensity. This article presents a detailed theoretical analysis and interpretation of such quasi-steady-state Voc measurements (QssVoc). The ability of this analysis to accurately obtain the true steady-state device characteristics even in the case of high lifetime, high resistivity silicon devices is demonstrated experimentally. The QssVoc technique can be used to determine the minority carrier lifetime, and the new generalized analysis is required to do this accurately. An important outcome is that solar cell and diode device characteristics can be obtained from measurements of either the photoconductance or the open-circuit voltage, even using transient techniques.}, issn = {00218979}, doi = {10.1063/1.1416134}, author = {Mark J Kerr and Andr{\'e}s Cuevas and Ronald A. Sinton} } @book {Brady2002, title = {Materials handbook: [foundation for the science of metallurgy; compares the advantages and disadvantages of different manufacturing processes; comprehensive in approach].}, year = {2002}, publisher = {{McGraw-Hill}}, organization = {{McGraw-Hill}}, address = {New York [u.a.]}, isbn = {{007136076X} 9780071360760}, url = {http://www.scribd.com/doc/6395226/Materials-Handboook}, author = {Brady, George S and Clauser, Henry R and Vaccari, John A} } @article {Campbell2001, title = {High performance light trapping textures for monocrystalline silicon solar cells}, journal = {Solar Energy Materials and Solar Cells}, volume = {65}, year = {2001}, month = {Jan-01-2001}, pages = {369 - 375}, abstract = {Two novel texture schemes for the front of a c-Si silicon wafer solar cell are presented. The {\textquotedblleft}bipyramid{\textquotedblright} texture is of two inverted pyramids of similar sizes laid out in alternating order. The {\textquotedblleft}patch{\textquotedblright} texture uses a checkerboard layout of blocks of parallel grooves, with the grooves of alternating blocks perpendicularly oriented to each other. We estimate that these textures, which almost fully trap light for the first six passes through the substrate, can deliver better optical performance than the standard inverted pyramid texture, especially in narrow-band applications.}, issn = {09270248}, doi = {10.1016/S0927-0248(00)00115-X}, author = {Campbell, Patrick and Martin A Green} } @proceedings {Honsberg2001, title = {A New Generalized Detailed Balance Formulation to Calculate Solar Cell Efficiency Limits}, year = {2001}, note = {
}, pages = {22-26}, author = {Christiana B Honsberg and R. Corkish and S. P. Bremner} } @article {Macdonald2001, title = {On the use of a bias-light correction for trapping effects in photoconductance-based lifetime measurements of silicon}, journal = {Journal of Applied Physics}, volume = {89}, number = {5}, year = {2001}, pages = {2772-2778}, publisher = {AIP}, keywords = {CARRIER DENSITY, carrier lifetime, electron traps, electron-hole recombination, elemental semiconductors, hole traps, photoconductivity, SILICON, solar cells}, doi = {10.1063/1.1346652}, url = {http://link.aip.org/link/?JAP/89/2772/1}, author = {Daniel Macdonald and Ronald A. Sinton and Andr{\'e}s Cuevas} } @article {Yoon2000, title = {Photoelectrochemical properties of copper oxide thin films coated on an n-Si substrate}, journal = {Thin Solid Films}, volume = {372}, year = {2000}, pages = {250 - 256}, abstract = {The photoelectrochemical properties of the copper oxide thin film coated on the n-type silicon electrode were investigated as a function of film deposition temperature. The variation in the deposition temperature affected the film morphology and the ratio of copper to oxygen. In case of the films deposited below 200{\textdegree}C, the main phase was found to be CuO while the amount of the Cu2O phase increased with further increases in deposition temperature. The n-silicon photoelectrode showed enhanced photocurrent{\textendash}potential (I{\textendash}V) properties by forming a copper oxide/n-silicon heterojunction. In particular, the electrode, which mainly consisted of a CuO phase, showed better photoelectrochemical conversion efficiencies compared to the Cu2O phase. This result was explained in terms of the electrical conductance and transmittance of the copper oxide film.}, keywords = {XPS}, issn = {0040-6090}, doi = {http://dx.doi.org/10.1016/S0040-6090(00)01058-0}, url = {http://www.sciencedirect.com/science/article/pii/S0040609000010580}, author = {Ki Hyun Yoon and Woo Jin Choi and Dong Heon Kang} } @conference {Sinton2000, title = {A Quasi-Steady-State Open-Circuit Voltage Method for Solar Cell Characterization}, booktitle = {16th European Photovoltaic Solar Energy Conference}, year = {2000}, month = {05/2000}, pages = {1152{\textendash}1155}, address = {Glasgow, Scotland}, author = {Sinton, R.A. and Andr{\'e}s Cuevas} } @conference {Corkish2000, title = {Simulating Electron-Beam-Induced Current Profiles Across p-n Junctions}, booktitle = {Proceedings of the 16h European Solar Energy Conference}, year = {2000}, note = {
}, month = {1-5 May 2000}, pages = {1590-1593}, publisher = {James and James}, organization = {James and James}, address = {Glasgow UK}, isbn = {9781902916187}, author = {R. Corkish and Luke, K. L. and Pietro P Altermatt and G. Heiser} } @proceedings {Corkish2000, title = {Simulating Electron-Beam-Induced Current Profiles Across p-n Junctions}, year = {2000}, note = {
}, pages = {1590-1593}, author = {R. Corkish and Luke, K. L. and Pietro P Altermatt and G. Heiser} } @article {Chandramohan1997, title = {Preparation of Zinc Selenide Thin Films by Electrodeposition Technique for Solar Cell Applications}, journal = {physica status solidi (a)}, volume = {163}, year = {1997}, month = {Jan-10-1997}, pages = {R11 - R12}, issn = {00318965}, doi = {10.1002/(ISSN)1521-396X10.1002/1521-396X(199710)163:2<>1.0.CO;2-U10.1002/1521-396X(199710)163:23.0.CO;2-3}, author = {Chandramohan, R. and Sanjeeviraja, C. and Mahalingam, T.} } @article {Sinton1996, title = {Contactless determination of current{\textendash}voltage characteristics and minority-carrier lifetimes in semiconductors from quasi-steady-state photoconductance data}, journal = {Applied Physics Letters}, volume = {69}, number = {17}, year = {1996}, pages = {2510-2512}, publisher = {AIP}, keywords = {carrier lifetime, CV CHARACTERISTIC, MINORITY CARRIERS, photoconductivity, SEMICONDUCTOR MATERIALS, SILICON, STEADY {\textendash} STATE CONDITIONS}, doi = {10.1063/1.117723}, url = {http://link.aip.org/link/?APL/69/2510/1}, author = {Ronald A. Sinton and Andr{\'e}s Cuevas} } @article {Stocks1996, title = {Texturing of polycrystalline silicon}, journal = {Solar Energy Materials and Solar Cells}, volume = {40}, number = {1}, year = {1996}, pages = {33 - 42}, issn = {0927-0248}, doi = {DOI: 10.1016/0927-0248(95)00077-1}, url = {http://www.sciencedirect.com/science/article/B6V51-3VTFK7T-57/2/eb36bb8dfafef0de9e83d2f685caf541}, author = {M. J. Stocks and A. J. Carr and Andrew W Blakers} } @article {Verlinden1994, title = {7000 High Efficiency Cells for a Dream}, journal = {Progress in Photovoltaics: Research and Applications}, volume = {2}, year = {1994}, note = {
}, pages = {143 - 152}, author = {Verlinden, P.J. and Richard M Swanson and Crane, R.A.} } @article {Xu1993, title = {Electronic, optical, and structural properties of some wurtzite crystals}, journal = {Physical Review B}, volume = {48}, year = {1993}, month = {Jan-08-1993}, pages = {4335 - 4351}, issn = {0163-1829}, doi = {10.1103/PhysRevB.48.4335}, url = {http://link.aps.org/doi/10.1103/PhysRevB.48.4335}, author = {Xu, Yong-Nian and Ching, W.} } @proceedings {Narayanan1990, title = {18\% efficient polycrystalline silicon solar cells}, volume = {1}, year = {1990}, note = {
}, pages = {678-680}, author = {Narayanan, S. and Zolper, J. and Yun, F. and Wenham, S.R. and A. B. Sproul and Chong,C.M. and Martin A Green} } @article {Luke1987, title = {Analysis of the interaction of a laser pulse with a silicon wafer: Determination of bulk lifetime and surface recombination velocity}, journal = {Journal of Applied Physics}, volume = {61}, number = {6}, year = {1987}, pages = {2282-2293}, publisher = {AIP}, keywords = {carrier lifetime, LASERRADIATION HEATING, MINORITY CARRIERS, RECOMBINATION, SILICON, SILICON SOLAR CELLS, SURFACE PROPERTIES, THEORETICAL DATA, VELOCITY, WAFERS}, doi = {10.1063/1.337938}, url = {http://link.aip.org/link/?JAP/61/2282/1}, author = {Keung L. Luke and Li-Jen Cheng} } @article {Campbell1987, title = {Light trapping properties of pyramidally textured surfaces}, journal = {Journal of Applied Physics}, volume = {62}, year = {1987}, month = {Jan-01-1987}, pages = {243}, issn = {00218979}, doi = {10.1063/1.339189}, author = {Campbell, Patrick and Martin A Green} } @article {Mialhe1986, title = {The diode quality factor of solar cells under illumination}, journal = {Journal of Physics D: Applied Physics}, volume = {19}, year = {1986}, month = {Feb-03-1987}, pages = {483 - 492}, abstract = {A review of the methods of determination of solar cell quality factors is discussed from a theoretical point of view; experimental results are compared. Temperature effects, light and bias dependencies of the parameters and the models are considered in order to specify the limits of application of each method. }, issn = {0022-3727}, doi = {10.1088/0022-3727/19/3/018}, url = {https://iopscience.iop.org/article/10.1088/0022-3727/19/3/018http://stacks.iop.org/0022-3727/19/i=3/a=018/pdf}, author = {Mialhe, P and Charles, J P and Khoury, A and Bordure, G} } @article {560, title = {On the Effect of Impurities on the Photovoltaic Behavior of Solar-Grade Silicon}, journal = {Journal of The Electrochemical Society}, volume = {131}, year = {1984}, month = {Jan-01-1984}, pages = {2128}, abstract = {The electrical and photovoltaic properties of partially compensated p-type silicon samples have been investigated in order to understand the influence of the contemporaneous presence of donors and acceptors on the behavior of majority and minority carriers. It has been shown that the majority carrier properties are only slightly influenced by the presence of donors in p-type samples and that the minority carrier properties depend on the excess acceptor concentration up to an excess donor concentration close to Formula . A theoretical explanation of these features has been proposed, on the base of the Shockley-Read-Hall model of recombination at shallow traps and donor-acceptor pairs formation. }, issn = {00134651}, doi = {10.1149/1.2116033}, url = {http://jes.ecsdl.org/cgi/doi/10.1149/1.2116033}, author = {Pizzini, S. and Calligarich, C.} } @article {Tiedje1984, title = {Limiting Efficiency of Silicon Solar Cells}, journal = {IEEE TRANSACTIONS ON ELECTRON DEVICES}, volume = {ED-31}, year = {1984}, note = {
}, month = {05/1984}, author = {T. Tiedje and E Yablonovich and G.D. Cody and B.G. Brooks} } @article {Yablonovich1982, title = {Intensity Enhancement in Textured Optical Sheets for Solar Cells}, journal = {IEEE Transactions on Electron Devices}, volume = {ED-29}, year = {1982}, note = {
}, pages = {300-305}, author = {E Yablonovich and G.D. Cody} } @article {Logothetis1979, title = {Hall coefficient and reflectivity evidence that TiS 2 is a semiconductor}, journal = {Journal of Physics C: Solid State Physics}, volume = {12}, year = {1979}, pages = {L521}, abstract = {A series of measurements of the Hall coefficient, infrared reflectivity, thermoelectric power and electrical resistivity of Ti 1+x S 2 single crystals with various degrees of stoichiometry is described, where, for the first time, each measurement was made on the same crystal (or crystals from the same batch). None of these measurements taken alone can distinguish between the semimetallic or semiconducting models of TiS 2 . However, by making all four measurements on each sample, it has been possible to establish correlations between the results for different samples. It was found that the product of the Hall coefficient and the square of the plasma frequency is the same for all samples, a result that is consistent with a semiconductor model, but is inconsistent with a semimetal. Nevertheless the most stoichiometric samples remain metallic with electron concentrations of 2*10 20 cm -3 . It was also found that the resistivity data cannot be explained by carrier-carrier or optical phonon scattering. Therefore, both the source of the residual conduction electrons and the scattering mechanism in TiS 2 remain unknown.}, url = {http://stacks.iop.org/0022-3719/12/i=13/a=007}, author = {E M Logothetis and W J Kaiser and C A Kukkonen and S P Faile and R Colella and J Gambold} } @article {Logothetis1979a, title = {Hall coefficient and reflectivity evidence that TiS 2 is a semiconductor}, journal = {Journal of Physics C: Solid State Physics}, volume = {12}, year = {1979}, month = {Feb-07-1980}, pages = {L521 - L526}, issn = {0022-3719}, doi = {10.1088/0022-3719/12/13/007}, url = {http://stacks.iop.org/0022-3719/12/i=13/a=007?key=crossref.7b34e84721f0d96f60dce7c3e44ba4c7}, author = {Logothetis, E M and W J Kaiser and Kukkonen, C A and S P Faile and Colella, R and J Gambold} } @booklet {Bailey1979, title = {United States Patent: 4137123 - Texture etching of silicon: method}, year = {1979}, abstract = {

A surface etchant for silicon comprising an anisotropic etchant containing silicon is disclosed. The etchant provides a textured surface of randomly spaced and sized pyramids on a silicon surface. It is particularly useful in reducing the reflectivity of solar cell surfaces.

}, url = {http://patft.uspto.gov/netacgi/nph-Parser?Sect1=PTO2\&Sect2=HITOFF\&p=1\&u=\%2Fnetahtml\%2FPTO\%2Fsearch-bool.html\&r=32\&f=G\&l=50\&co1=AND\&d=PTXT\&s1=4,137,123\&OS=4,137,123\&RS=4,137,123}, author = {William L. Bailey and Michael G. Coleman and Cynthia B. Harris and Israel A. Lesk} } @article {Card1977, title = {Electronic processes at grain boundaries in polycrystalline semiconductors under optical illumination}, journal = {IEEE Transactions on Electron Devices}, volume = {ED-24}, year = {1977}, note = {
}, pages = {397-402}, author = {Card, H.C. and Yang, E.S.} } @article {Cooper1969, title = {The absorption of radiation in solar stills}, journal = {Solar Energy}, volume = {12}, number = {3}, year = {1969}, note = {
}, pages = {333 - 346}, issn = {0038-092X}, doi = {DOI: 10.1016/0038-092X(69)90047-4}, url = {http://www.sciencedirect.com/science/article/B6V50-497BD6C-27/2/a4ca2069fe8c8b0cfa571de016d93cc5}, author = {P.I. Cooper} } @article {Conroy1968, title = {Electrical properties of the Group IV disulfides, titanium disulfide, zirconium disulfide, hafnium disulfide and tin disulfide}, journal = {Inorganic Chemistry}, volume = {7}, year = {1968}, month = {Jan-03-1968}, pages = {459 - 463}, issn = {0020-1669}, doi = {10.1021/ic50061a015}, url = {http://pubs.acs.org/doi/abs/10.1021/ic50061a015}, author = {Conroy, Lawrence E. and Park, Kyu Chang} } @article {Vazquez1968, title = {Electroreflectance Measurements on Mg2Si, Mg2Ge, and Mg2Sn}, journal = {Physical Review}, volume = {176}, year = {1968}, month = {Jan-12-1968}, pages = {905 - 908}, issn = {0031-899X}, doi = {10.1103/PhysRev.176.905}, url = {http://link.aps.org/doi/10.1103/PhysRev.176.905}, author = {Vazquez, F. and Forman, Richard and Cardona, Manuel} } @article {Pliskin1964, title = {Nondestructive determination of thickness and refractive index of transparent films}, journal = {IBM Journal of Research Devices}, volume = {8}, number = {1}, year = {1964}, note = {
}, pages = {43{\textendash}51}, abstract = {

A simple nondestructive method of measuring the refractive index and thickness of transparent films on reflective substrates has been developed. The technique involves the use of a microscope equipped with a monochromatic filter on the objective and a stage that can be rotated so that the reflected light is observed at various angles. The film thickness, d, is given by d = {[\ΔN\λ]/[2\µ(cos} r2, - cos r1)], where \λ is the wavelength of the filtered light, \µ is the refractive index, and {\ΔN} is the number of fringes observed between the angles of refraction r2, and r1.

}, url = {http://portal.acm.org/citation.cfm?id=1662391}, author = {W. A. Pliskin and E. E. Conrad} } @article {Chapin1954, title = {A New Silicon P-N Junction Photocell for Converting Solar Radiation into Electrical Power}, journal = {Journal of Applied Physics}, volume = {25}, year = {1954}, note = {
}, pages = {676-677}, author = {Chapin, D.M. and Fuller, C.S. and Pearson, G.L.} } @article {Czochralski1918, title = {Ein neues Verfahren zur Messung der Kristallisationsgeschwindigheit der Metalle}, journal = {Zeitschrift f{\"u}r physikalische Chemie}, volume = {92}, year = {1918}, pages = {219{\textendash}221}, author = {Czochralski, J.} }