Biblio

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W. Shafarman, Sieventritt, S., and Stolt, L., Cu(InGa)Se2 Solar Cells, in Handbook of photovoltaic science and engineering, 2nd ed., A. Luque and Hegedus, S., Eds. John Wiley & Sons, 2011, pp. 546-599.
J. N. Shive, Semiconductor Devices, Chapter 8, New Jersey: Van Nostrand, 1959.
W. Shockley, Electrons and holes in semiconductors with applications to transistor electronics. New York: van Nostrand, 1950.
W. Shockley and Queisser, H. J., Detailed Balance Limit of Efficiency of p-n Junction Solar Cells, Journal of Applied Physics, vol. 32, pp. 510-519, 1961.
W. Shockley, The theory of p-n Junctions in semiconductors and p-n junction transistors, Bell System Technical Journal, vol. 28, no. 3, pp. 435 - 489, 1949.
W. Shockley and Read, W. T., Statistics of the Recombinations of Holes and Electrons, Physical Review, vol. 87, p. 835, 1952.
G. Simmons and Birch, F., Elastic Constants of Pyrite, Journal of Applied Physics, vol. 34, no. 9, pp. 2736 - 2738, 1963.
R. A. Sinton and Swanson, R. M., Recombination in highly injected silicon, Electron Devices, IEEE Transactions on, vol. 34, pp. 1380 - 1389, 1987.
R. A. Sinton and Cuevas, A., Contactless determination of current–voltage characteristics and minority-carrier lifetimes in semiconductors from quasi-steady-state photoconductance data, Applied Physics Letters, vol. 69, pp. 2510-2512, 1996.
R. A. Sinton and Cuevas, A., A Quasi-Steady-State Open-Circuit Voltage Method for Solar Cell Characterization, in 16th European Photovoltaic Solar Energy Conference, Glasgow, Scotland, 2000, pp. 1152–1155.
C. Smith and Barron, A., Synthesis and Purification of Bulk Semiconductors, 2012. [Online]. Available: http://cnx.org/content/m23936/1.7/.
F. M. Smits, Measurement of sheet resistivities with the four-point probe, Bell System Technical Journal, vol. 34, pp. 711-718, 1958.
A. B. Sproul, Green, M. A., and Zhao, J., Improved value for the silicon intrinsic carrier concentration at 300 K, Applied Physics Letters, vol. 57, p. 255, 1990.
A. B. Sproul and Green, M. A., Improved value for the silicon intrinsic carrier concentration from 275 to 375 K, Journal of Applied Physics, vol. 70, pp. 846-854, 1991.
A. B. Sproul, Dimensionless solution of the equation describing the effect of surface recombination on carrier decay in semiconductors, Journal of Applied Physics, vol. 76, pp. 2851-2854, 1994.
A. B. Sproul and Green, M. A., Improved value for the silicon intrinsic carrier concentration from 275 to 375 K, Journal of Applied Physics, vol. 70, p. 846, 1991.
C. Steinhagen, Panthani, M. G., Akhavan, V., Goodfellow, B., Koo, B., and Korgel, B. A., Synthesis of Cu2ZnSnS4 nanocrystals for use in low-cost photovoltaics, Journal of the American Chemical Society, vol. 131, pp. 12554–12555, 2009.
M. J. Stocks, Carr, A. J., and Blakers, A. W., Texturing of polycrystalline silicon, Solar Energy Materials and Solar Cells, vol. 40, pp. 33 - 42, 1996.
B. G. Streetman, Solid State Electronic Devices. Prentice Hall, 2000.
K. Sun et al., Over 9% Efficient Kesterite Cu 2 ZnSnS 4 Solar Cell Fabricated by Using Zn 1- x Cd x S Buffer Layer, Advanced Energy Materials, vol. 6, no. 12, p. 1600046, 2016.
R. M. Swanson, Approaching the 29% limit efficiency of silicon solar cells, Thirty-First IEEE Photovoltaic Specialists Conference. 01/2005, Lake buena Vista, FL, USA, pp. 889-94, 2005.
J. Szlufcik, Sivoththaman, S., Nlis, J. F., Mertens, R. P., and Van-Overstraeten, R., Low-cost industrial technologies of crystalline silicon solar cells, Proceedings-of-the-IEEE, vol. 85. pp. 711-730, 1997.

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