Biblio
“Cu(InGa)Se2 Solar Cells”, in Handbook of photovoltaic science and engineering, 2nd ed., John Wiley & Sons, 2011, pp. 546-599.
, “Semiconductor Devices, Chapter 8”, New Jersey: Van Nostrand, 1959.
, Electrons and holes in semiconductors with applications to transistor electronics. New York: van Nostrand, 1950.
, “Statistics of the Recombinations of Holes and Electrons”, Physical Review, vol. 87, p. 835, 1952.
, “Detailed Balance Limit of Efficiency of p-n Junction Solar Cells”, Journal of Applied Physics, vol. 32, pp. 510-519, 1961.
, “The theory of p-n Junctions in semiconductors and p-n junction transistors”, Bell System Technical Journal, vol. 28, no. 3, pp. 435 - 489, 1949.
, “Elastic Constants of Pyrite”, Journal of Applied Physics, vol. 34, no. 9, pp. 2736 - 2738, 1963.
, “Contactless determination of current–voltage characteristics and minority-carrier lifetimes in semiconductors from quasi-steady-state photoconductance data”, Applied Physics Letters, vol. 69, pp. 2510-2512, 1996.
, “Recombination in highly injected silicon”, Electron Devices, IEEE Transactions on, vol. 34, pp. 1380 - 1389, 1987.
, “A Quasi-Steady-State Open-Circuit Voltage Method for Solar Cell Characterization”, in 16th European Photovoltaic Solar Energy Conference, Glasgow, Scotland, 2000, pp. 1152–1155.
, “Synthesis and Purification of Bulk Semiconductors”, 2012. [Online]. Available: http://cnx.org/content/m23936/1.7/.
, “Measurement of sheet resistivities with the four-point probe”, Bell System Technical Journal, vol. 34, pp. 711-718, 1958.
, “Dimensionless solution of the equation describing the effect of surface recombination on carrier decay in semiconductors”, Journal of Applied Physics, vol. 76, pp. 2851-2854, 1994.
, “Improved value for the silicon intrinsic carrier concentration from 275 to 375 K”, Journal of Applied Physics, vol. 70, pp. 846-854, 1991.
, “Improved value for the silicon intrinsic carrier concentration at 300 K”, Applied Physics Letters, vol. 57, p. 255, 1990.
, “Improved value for the silicon intrinsic carrier concentration from 275 to 375 K”, Journal of Applied Physics, vol. 70, p. 846, 1991.
, “Synthesis of Cu2ZnSnS4 nanocrystals for use in low-cost photovoltaics”, Journal of the American Chemical Society, vol. 131, pp. 12554–12555, 2009.
, “Texturing of polycrystalline silicon”, Solar Energy Materials and Solar Cells, vol. 40, pp. 33 - 42, 1996.
, Solid State Electronic Devices. Prentice Hall, 2000.
, “Over 9% Efficient Kesterite Cu 2 ZnSnS 4 Solar Cell Fabricated by Using Zn 1- x Cd x S Buffer Layer”, Advanced Energy Materials, vol. 6, no. 12, p. 1600046, 2016.
, “Approaching the 29% limit efficiency of silicon solar cells”, Thirty-First IEEE Photovoltaic Specialists Conference. 01/2005, Lake buena Vista, FL, USA, pp. 889-94, 2005.
, “Low-cost industrial technologies of crystalline silicon solar cells”, Proceedings-of-the-IEEE, vol. 85. pp. 711-730, 1997.
, “World’s Highest Efficiency Triple-junction Solar Cells Fabricated by Inverted Layers Transfer Process”, 35 IEEE Photovoltaic Specialist Conference. Honolulu HI, USA, 2010.
, “Crystallinity and surface effects on Young’s modulus of CuO nanowires”, Applied Physics Letters, vol. 90, no. 16, p. 163112, 2007.
, “Thermoelectric properties of Bi-doped Mg2Si semiconductors”, Physica B: Condensed Matter, vol. 364, no. 1-4, pp. 218 - 224, 2005.
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