@article {Almanac, title = {The Astronomical Almanac}, year = {2020}, url = {http://asa.hmnao.com/}, author = {U. S. Naval Observatory} } @article {Nakamura2019Cdfree, title = {Cd-Free Cu(In,Ga)(Se,S)2 Thin-Film Solar Cell With Record Efficiency of 23.35\%}, journal = {IEEE Journal of Photovoltaics}, volume = {9}, year = {2019}, pages = {1863-1867}, doi = {10.1109/JPHOTOV.2019.2937218}, url = {https://ieeexplore-ieee-org.udel.idm.oclc.org/document/8825469/authors$\#$authors}, author = {M. Nakamura and K. Yamaguchi and Y. Kimoto and Y. Yasaki and T. Kato and H. Sugimoto} } @article {Augusto2017, title = {Analysis of the recombination mechanisms of a silicon solar cell with low bandgap-voltage offset}, journal = {Journal of Applied Physics}, volume = {121}, year = {2017}, month = {Apr-05-2019}, pages = {205704}, issn = {0021-8979}, doi = {10.1063/1.4984071}, url = {http://aip.scitation.org/doi/10.1063/1.4984071http://aip.scitation.org/doi/pdf/10.1063/1.4984071http://aip.scitation.org/doi/pdf/10.1063/1.4984071http://aip.scitation.org/doi/am-pdf/10.1063/1.4984071}, author = {Augusto, Andr{\'e} and Herasimenka, Stanislau Y. and King, Richard R. and Bowden, Stuart G. and Honsberg, Christiana} } @article {feurer2017progress, title = {Progress in thin film CIGS photovoltaics{\textendash}Research and development, manufacturing, and applications}, journal = {Progress in Photovoltaics: Research and Applications}, volume = {25}, year = {2017}, pages = {645{\textendash}667}, author = {Feurer, Thomas and Reinhard, Patrick and Avancini, Enrico and Bissig, Benjamin and L{\"o}ckinger, Johannes and Fuchs, Peter and Carron, Romain and Weiss, Thomas Paul and Perrenoud, Julian and Stutterheim, Stephan and Buecheler, Stephan and Tiwari, Ayodhya N.} } @article {jackson2016effects, title = {Effects of heavy alkali elements in Cu (In, Ga) Se2 solar cells with efficiencies up to 22.6\%}, journal = {physica status solidi (RRL){\textendash}Rapid Research Letters}, volume = {10}, year = {2016}, pages = {583{\textendash}586}, author = {Jackson, Philip and Wuerz, Roland and Hariskos, Dimitrios and Lotter, Erwin and Witte, Wolfram and Powalla, Michael} } @article {Hages2016, title = {Generalized quantum efficiency analysis for non-ideal solar cells: Case of Cu 2 ZnSnSe 4}, journal = {Journal of Applied Physics}, volume = {119}, year = {2016}, month = {Jul-01-2016}, pages = {014505}, issn = {0021-8979}, doi = {10.1063/1.4939487}, url = {http://aip.scitation.org/doi/10.1063/1.4939487http://aip.scitation.org/doi/pdf/10.1063/1.4939487}, author = {Charles J. Hages and Carter, Nathaniel J. and Rakesh Agrawal} } @article {Hages2016opto, title = {Optoelectronic and material properties of nanocrystal-based \{CZTSe\} absorbers with Ag-alloying}, journal = {Solar Energy Materials and Solar Cells}, volume = {145, Part 3}, year = {2016}, pages = {342 - 348}, abstract = {Abstract In this work, the benefits of Ag-alloying in kesterite solar cells are explored in terms of tunable band gap, improved grain growth, improved minority carrier lifetime, reduced defect formation, and reduced potential fluctuations for (Ag,Cu)2ZnSnSe4 (ACZTSe) absorbers relative to Cu2ZnSnSe4 (CZTSe). The enhanced optoelectronic properties are shown to scale here with the degree of Ag-alloying in ACZTSe. The impacts of these effects on device performance are discussed, with improvement in average device performance/open-circuit voltage reported for \{ACZTSe\} (5\%-Ag) absorbers relative to \{CZTSe\} absorbers with similar band gap. These initial results are promising for the Ag-alloyed \{ACZTSe\} material system as \{VOC\} limitations are the primary cause of poor device performance in kesterite solar cells, and cation substitution presents a unique method to tune the defect properties of kesterite absorbers. Herein, nanoparticle synthesis and large-grain \{ACZTSe\} absorber formation is described followed by material and optoelectronic characterization. Additionally, \{RTP\} processing is presented to achieve fully selenized large-grain chalcogenide absorbers from sulfide nanocrystal inks.}, keywords = {Characterization}, issn = {0927-0248}, doi = {http://dx.doi.org/10.1016/j.solmat.2015.10.039}, url = {http://www.sciencedirect.com/science/article/pii/S0927024815005504}, author = {Charles J. Hages and Mark J. Koeper and Rakesh Agrawal} } @article {Sun2016, title = {Over 9\% Efficient Kesterite Cu 2 ZnSnS 4 Solar Cell Fabricated by Using Zn 1- x Cd x S Buffer Layer}, journal = {Advanced Energy Materials}, volume = {6}, year = {2016}, month = {Jan-06-2016}, pages = {1600046}, doi = {10.1002/aenm.201600046}, url = {http://doi.wiley.com/10.1002/aenm.201600046https://api.wiley.com/onlinelibrary/tdm/v1/articles/10.1002\%2Faenm.201600046}, author = {Sun, Kaiwen and Yan, Chang and Liu, Fangyang and Huang, Jialiang and Zhou, Fangzhou and Stride, John A. and Martin A Green and Hao, Xiaojing} } @booklet {ASTM2016, title = {Test Method for Determination of the Spectral Mismatch Parameter Between a Photovoltaic Device and a Photovoltaic Reference Cell}, year = {2016}, doi = {10.1520/E0973-16}, url = {http://www.astm.org/cgi-bin/resolver.cgi?E973-16} } @article {Hong2016, title = {Trigonal Cu 2 -II-Sn-VI 4 (II = Ba, Sr and VI = S, Se) quaternary compounds for earth-abundant photovoltaics}, journal = {Phys. Chem. Chem. Phys.}, volume = {18}, year = {2016}, month = {Jan-01-2016}, pages = {4828 - 4834}, issn = {1463-9076}, doi = {10.1039/C5CP06977G}, url = {http://xlink.rsc.org/?DOI=C5CP06977G}, author = {Hong, Feng and Lin, Wenjun and Meng, Weiwei and Yan, Yanfa} } @article {Yang2013, title = {Development of high-performance multicrystalline silicon for photovoltaic industry}, journal = {Progress in Photovoltaics: Research and Applications}, volume = {23}, year = {2015}, month = {Jan-03-2015}, pages = {340 - 351}, abstract = {The low cost and high quality of multicrystalline silicon (mc-Si) based on directional solidification has become the main stream in photovoltaic (PV) industry. The mc-Si quality affects directly the conversion efficiency of solar cells, and thus, it is crucial to the cost of PV electricity. With the breakthrough of crystal growth technology, the so-called high-performance mc-Si has increased about 1\% in solar cell efficiency from 16.6\% in 2011 to 17.6\% in 2012 based on the whole ingot performance. In this paper, we report our development of this high-performance mc-Si. The key ideas behind this technology for defect control are discussed. With the high-performance mc-Si, we have achieved an average efficiency of near 17.8\% and an open-circuit voltage (Voc) of 633 mV in production. The distribution of cell efficiency was rather narrow, and low-efficiency cells (<17\%) were also very few. The power of the 60-cell module using the high-efficiency cells could reach 261 W as well. }, doi = {10.1002/pip.v23.310.1002/pip.2437}, url = {http://doi.wiley.com/10.1002/pip.v23.3http://doi.wiley.com/10.1002/pip.2437https://onlinelibrary.wiley.com/doi/full/10.1002/pip.2437https://api.wiley.com/onlinelibrary/tdm/v1/articles/10.1002\%2Fpip.2437}, author = {Yang, Y. M. and Yu, A. and Hsu, B. and Hsu, W. C. and Yang, A. and Lan, C. W.} } @article {Kumar2015, title = {Strategic review of secondary phases, defects and defect-complexes in kesterite CZTS{\textendash}Se solar cells}, journal = {Energy Environ. Sci.}, volume = {8}, year = {2015}, month = {Jan-01-2015}, pages = {3134 - 3159}, issn = {1754-5692}, doi = {10.1039/C5EE02153G}, url = {http://xlink.rsc.org/?DOI=C5EE02153G}, author = {Kumar, Mukesh and Dubey, Ashish and Adhikari, Nirmal and Venkatesan, Swaminathan and Qiao, Qiquan} } @article {wang2014device, title = {Device characteristics of CZTSSe thin-film solar cells with 12.6\% efficiency}, journal = {Advanced Energy Materials}, volume = {4}, year = {2014}, author = {Wang, Wei and Winkler, Mark T and Oki Gunawan and Tayfun Gokmen and Todorov, Teodor K and Zhu, Yu and Mitzi, David B} } @conference {nakamura2014recent, title = {Recent R\&D progress in solar frontier{\textquoteright}s small-sized Cu (InGa)(SeS)2 solar cells}, booktitle = {2014 IEEE 40th Photovoltaic Specialist Conference (PVSC)}, year = {2014}, publisher = {IEEE}, organization = {IEEE}, author = {Nakamura, Motoshi and Yoneyama, Nobutaka and Horiguchi, Kyouhei and Iwata, Yasuaki and Yamaguchi, Koji and Sugimoto, Hiroki and Kato, Takuya} } @article {Cuevas2014, title = {The Recombination Parameter J0}, journal = {Energy Procedia}, volume = {55}, year = {2014}, month = {Jan-01-2014}, pages = {53 - 62}, abstract = {The parameter J0, commonly used in solar cell modelling, has a deep physical meaning, which this paper intends to clarify. Upon examination, J0 can be identified as the recombination current density in thermal equilibrium. In many cases the same equilibrium parameter J0 can be used to describe carrier recombination under external illumination. Nevertheless, when carriers flow from the point where they are generated towards a high recombination site the value of J0 that matters to solar cell operation differs from that in equilibrium. In addition, J0, may in certain cases be dependent on the excess carrier concentration. We conclude by recommending that J0 be referred to as a recombination parameter.}, issn = {18766102}, doi = {10.1016/j.egypro.2014.08.073}, url = {http://www.sciencedirect.com/science/article/pii/S1876610214012971$\#$}, author = {Andr{\'e}s Cuevas} } @article {Gokmen2013, title = {Band tailing and efficiency limitation in kesterite solar cells}, journal = {Applied Physics Letters}, volume = {103}, year = {2013}, pages = {103506}, doi = {10.1063/1.4820250}, url = {http://dx.doi.org/10.1063/1.4820250}, author = {Tayfun Gokmen and Oki Gunawan and Teodor K. Todorov and David B. Mitzi} } @article {powalla2013high, title = {High-efficiency Cu(In,Ga)Se2 cells and modules}, journal = {Solar energy materials and solar cells}, volume = {119}, year = {2013}, pages = {51{\textendash}58}, author = {Powalla, Michael and Jackson, Philip and Witte, Wolfram and Hariskos, Dimitrios and Paetel, Stefan and Tschamber, Carsten and Wischmann, Wiltraud} } @article {pettersson2013influence, title = {The Influence of Absorber Thickness on Cu(In,Ga)Se2 Solar Cells With Different Buffer Layers}, journal = {IEEE journal of photovoltaics}, volume = {3}, year = {2013}, pages = {1376{\textendash}1382}, doi = {10.1109/JPHOTOV.2013.2276030}, url = {https://ieeexplore.ieee.org/abstract/document/6579660}, author = {Pettersson, Jonas and T{\"o}rndahl, Tobias and Platzer-Bj{\"o}rkman, Charlotte and Hultqvist, Adam and Edoff, Marika} } @article {usgs_silicon_2013, title = {Minerals Yearbook, Vol. I, Metals \& Minerals:}, year = {2013}, pages = {144}, publisher = {U.S. Government Printing Office}, url = {http://minerals.usgs.gov/minerals/pubs/commodity/silicon/mcs-2013-simet.pdf}, author = {Lisa A. Corathers} } @conference {Bowden2013, title = {SPIE ProceedingsNon PN junction solar cells using carrier selective contacts}, booktitle = {SPIE OPTOPhysics, Simulation, and Photonic Engineering of Photovoltaic Devices II}, year = {2013}, publisher = {SPIE}, organization = {SPIE}, address = {San Francisco, California, USA}, doi = {10.1117/12.2004259}, url = {http://proceedings.spiedigitallibrary.org/proceeding.aspx?doi=10.1117/12.2004259}, author = {Bowden, Stuart and Ghosh, Kunal and Honsberg, Christiana} } @inbook {mcevoy2012solar, title = {Cu(In,Ga)Se2 Thin-Film Solar Cells}, booktitle = {Solar Cells: Materials, Manufacture and Operation}, year = {2012}, pages = {262}, publisher = {Academic Press}, organization = {Academic Press}, address = {London}, author = {Rau, U. and Schock, H.W. and Castaner, L}, editor = {McEvoy, Augustin and Markvart, Tom} } @article {Lim2012, title = {Facile Synthesis of Colloidal CuO Nanocrystals for Light-Harvesting Applications}, journal = {Journal of Nanomaterials}, volume = {20123312825910287}, year = {2012}, month = {Jan-01-2012}, pages = {1 - 6}, issn = {1687-4110}, doi = {10.1155/2012/393160}, url = {http://www.hindawi.com/journals/jnm/2012/393160/}, author = {Lim, Yee-Fun and Choi, Joshua J. and Hanrath, Tobias} } @article {Hanasoge2012, title = {From the Cover: Anomalously weak solar convection}, journal = {Proceedings of the National Academy of Sciences}, volume = {109}, year = {2012}, month = {Dec-07-2013}, pages = {11928 - 11932}, abstract = {Convection in the solar interior is thought to comprise structures on a spectrum of scales. This conclusion emerges from phenomenological studies and numerical simulations, though neither covers the proper range of dynamical parameters of solar convection. Here, we analyze observations of the wavefield in the solar photosphere using techniques of time-distance helioseismology to image flows in the solar interior. We downsample and synthesize 900 billion wavefield observations to produce 3 billion cross-correlations, which we average and fit, measuring 5 million wave travel times. Using these travel times, we deduce the underlying flow systems and study their statistics to bound convective velocity magnitudes in the solar interior, as a function of depth and spherical-harmonic degree l. Within the wavenumber band l < 60, convective velocities are 20{\textendash}100 times weaker than current theoretical estimates. This constraint suggests the prevalence of a different paradigm of turbulence from that predicted by existing models, prompting the question: what mechanism transports the heat flux of a solar luminosity outwards? Advection is dominated by Coriolis forces for wavenumbers l < 60, with Rossby numbers smaller than approximately 10-2 at r/R⊙ = 0.96, suggesting that the Sun may be a much faster rotator than previously thought, and that large-scale convection may be quasi-geostrophic. The fact that isorotation contours in the Sun are not coaligned with the axis of rotation suggests the presence of a latitudinal entropy gradient. }, issn = {0027-8424}, doi = {10.1073/pnas.1206570109}, author = {Hanasoge, S. M. and Duvall, T. L. and Sreenivasan, K. R.} } @article {Richter2012, title = {Improved quantitative description of Auger recombination in crystalline silicon}, journal = {Physical Review B}, volume = {86}, year = {2012}, month = {Jan-10-2012}, abstract = {An accurate quantitative description of the Auger recombination rate in silicon as a function of the dopant density and the carrier injection level is important to understand the physics of this fundamental mechanism and to predict the physical limits to the performance of silicon based devices. Technological progress has permitted a near suppression of competing recombination mechanisms, both in the bulk of the silicon crystal and at the surfaces. This, coupled with advanced characterization techniques, has led to an improved determination of the Auger recombination rate, which is lower than previously thought. In this contribution we present a systematic study of the injection-dependent carrier recombination for a broad range of dopant concentrations of high-purity n-type and p-type silicon wafers passivated with state-of-the-art dielectric layers of aluminum oxide or silicon nitride. Based on these measurements, we develop a general parametrization for intrinsic recombination in crystalline silicon at 300 K consistent with the theory of Coulomb-enhanced Auger and radiative recombination. Based on this improved description we are able to analyze physical aspects of the Auger recombination mechanism such as the Coulomb enhancement.}, issn = {1098-0121}, doi = {10.1103/PhysRevB.86.165202}, author = {Richter, Armin and Stefan W. Glunz and Werner, Florian and Jan Schmidt and Andr{\'e}s Cuevas} } @article {533, title = {Isotextured Silicon Solar Cell Analysis and Modeling 1: Optics}, journal = {IEEE Journal of Photovoltaics}, volume = {2}, year = {2012}, month = {Jan-10-2012}, pages = {457 - 464}, issn = {2156-3381}, doi = {10.1109/JPHOTOV.2012.2206569}, author = {Baker-Finch, Simeon C. and McIntosh, Keith R. and Terry, Mason L.} } @article {Emilio2012, title = {MEASURING THE SOLAR RADIUS FROM SPACE DURING THE 2003 AND 2006 MERCURY TRANSITS}, journal = {The Astrophysical Journal}, volume = {750}, year = {2012}, month = {Oct-05-2012}, pages = {135}, issn = {0004-637X}, doi = {10.1088/0004-637X/750/2/135}, url = {http://stacks.iop.org/0004-637X/750/i=2/a=135?key=crossref.05e0b42eda734799131016b454577c66http://stacks.iop.org/0004-637X/750/i=2/a=135/pdf}, author = {Emilio, M. and Kuhn, J. R. and Bush, R. I. and Scholl, I. F.} } @article {IAU2012, title = {Measuring the Universe}, volume = {2018}, year = {2012}, publisher = {International Astronomical Union}, type = {Website}, author = {International Astronomical Union} } @conference {532, title = {OPAL 2: Rapid optical simulation of silicon solar cells}, booktitle = {2012 IEEE 38th Photovoltaic Specialists Conference (PVSC)2012 38th IEEE Photovoltaic Specialists Conference}, year = {2012}, publisher = {IEEE}, organization = {IEEE}, address = {Austin, TX, USA}, abstract = {The freeware program OPAL 2 computes the optical losses associated with the front surface of a Si solar cell. It calculates the losses for any angle of incidence within seconds, where the short computation time is achieved by decoupling the ray tracing from the Fresnel equations. Amongst other morphologies, OPAL 2 can be used to assess the random-pyramid texture of c-Si solar cells, or the {\textquoteleft}isotexture{\textquoteright} of mc-Si solar cells, and to determine (i) the optimal thickness of an antireflection coating with or without encapsulation, (ii) the impact of imperfect texturing, such as non-ideal texture angles, over-etched isotexture, and flat regions, and (iii) the subsequent 1D generation profile in the Si. This paper describes the approach and assumptions employed by OPAL 2 and presents examples that demonstrate the dependence of optical losses on texture quality and incident angle.}, isbn = {978-1-4673-0064-3}, doi = {10.1109/PVSC.2012.6317616}, author = {McIntosh, Keith R. and Baker-Finch, Simeon C.} } @article {Smith2012, title = {Synthesis and Purification of Bulk Semiconductors}, year = {2012}, url = {http://cnx.org/content/m23936/1.7/}, author = {C. Smith and A Barron} } @article {puthussery2011, title = {Colloidal Iron Pyrite (FeS 2 ) Nanocrystal Inks for Thin-Film Photovoltaics}, journal = {Journal of the American Chemical Society}, volume = {133}, year = {2011}, month = {Feb-02-2011}, pages = {716 - 719}, issn = {0002-7863}, doi = {10.1021/ja1096368}, url = {http://pubs.acs.org/doi/abs/10.1021/ja1096368http://pubs.acs.org/doi/pdf/10.1021/ja1096368}, author = {Puthussery, James and Seefeld, Sean and Berry, Nicholas and Gibbs, Markelle and Law, Matt} } @inbook {luque2011handbook, title = {Cu(InGa)Se2 Solar Cells}, booktitle = {Handbook of photovoltaic science and engineering}, year = {2011}, pages = {546-599}, publisher = {John Wiley \& Sons}, organization = {John Wiley \& Sons}, edition = {2}, chapter = {13}, author = {Shafarman, William and Sieventritt, Susanne and Stolt, Lars}, editor = {Luque, Antonio and Hegedus, Steven} } @article {Park2011, title = {Effects of electrical contacts on the photoconductive gain of nanowire photodetectors}, journal = {Applied Physics Letters}, volume = {99}, year = {2011}, month = {Jan-01-2011}, pages = {143110}, issn = {00036951}, doi = {10.1063/1.3647559}, url = {http://link.aip.org/link/APPLAB/v99/i14/p143110/s1\&Agg=doi}, author = {Park, Hongsik and Kim, Jin Ho and Beresford, Roderic and Xu, Jimmy} } @article {Liu2011, title = {Electronic structure of TiS2 and its electric transport properties under high pressure}, journal = {Journal of Applied Physics}, volume = {109}, year = {2011}, month = {Jan-01-2011}, pages = {053717}, issn = {00218979}, doi = {10.1063/1.3552299}, url = {http://link.aip.org/link/JAPIAU/v109/i5/p053717/s1\&Agg=doi}, author = {Liu, Bao and Yang, Jie and Han, Yonghao and Hu, Tingjing and Ren, Wanbin and Liu, Cailong and Ma, Yanzhang and Gao, Chunxiao} } @article {Serin2011, title = {Extraction of important electrical parameters of CuO}, journal = {Physica B: Condensed Matter}, volume = {406}, year = {2011}, month = {Jan-02-2011}, pages = {575 - 578}, issn = {09214526}, doi = {10.1016/j.physb.2010.11.044}, url = {http://linkinghub.elsevier.com/retrieve/pii/S0921452610010999}, author = {Serin, T. and Yildiz, A. and {\c S}ahin, {\c S}. and Serin, N.} } @article {Kidowaki2011, title = {Fabrication and Characterization of CuO-based Solar Cells}, journal = {Journal of Materials Science Research}, volume = {1}, year = {2011}, month = {May-12-2013}, issn = {1927-0585}, doi = {10.5539/jmsr.v1n1p138}, url = {http://www.ccsenet.org/journal/index.php/jmsr/article/view/14002}, author = {KIDOWAKI, Hiroki and OKU, Takeo and Akiyama, Tsuyoshi and SUZUKI, Atsushi and JEYADEVAN, Balachandran and Cuya, Jhon} } @mastersthesis {Ghosh2011, title = {Heterojunction and Nanostructured Photovoltaic Device: Theory and Experiment}, year = {2011}, school = {Arizona State University}, type = {phdPh. D. Thesis}, abstract = {A primary motivation of research in photovoltaic technology is to obtain higher efficiency photovoltaic devices at reduced cost of production so that solar electricity can be cost competitive. The majority of photovoltaic technologies are based on p-n junction, with efficiency potential being much lower than the thermodynamic limits of individual technologies and thereby providing substantial scope for further improvements in efficiency. The thesis explores photovoltaic devices using new physical processes that rely on thin layers and are capable of attaining the thermodynamic limit of photovoltaic technology. Silicon heterostructure is one of the candidate technologies in which thin films induce a minority carrier collecting junction in silicon and the devices can achieve efficiency close to the thermodynamic limits of silicon technology. The thesis proposes and experimentally establishes a new theory explaining the operation of silicon heterostructure solar cells. The theory will assist in identifying the optimum properties of thin film materials for silicon heterostructure and help in design and characterization of the devices, along with aiding in developing new devices based on this technology. The efficiency potential of silicon heterostructure is constrained by the thermodynamic limit (31\%) of single junction solar cell and is considerably lower than the limit of photovoltaic conversion (\textasciitilde 80 \%). A further improvement in photovoltaic conversion efficiency is possible by implementing a multiple quasi-fermi level system (MQFL). A MQFL allows the absorption of sub band gap photons with current being extracted at a higher band-gap, thereby allowing to overcome the efficiency limit of single junction devices. A MQFL can be realized either by thin epitaxial layers of alternating higher and lower band gap material with nearly lattice matched (quantum well) or highly lattice mismatched (quantum dot) structure. The thesis identifies the material combination for quantum well structure and calculates the absorption coefficient of a MQFl based on quantum well. GaAsSb (barrier)/InAs(dot) was identified as a candidate material for MQFL using quantum dot. The thesis explains the growth mechanism of GaAsSb and the optimization of GaAsSb and GaAs heterointerface.}, keywords = {a-Si/c-Si heterojunction, Alternative energy, Engineering, Nanostructure, Photovoltaics, Solar}, url = {http://hdl.handle.net/2286/R.I.14312}, author = {Ghosh, Kunal} } @article {Mitzi2011, title = {The path towards a high-performance solution-processed kesterite solar cell}, journal = {Solar Energy Materials and Solar Cells}, volume = {95}, year = {2011}, pages = {1421 - 1436}, abstract = {Despite the promise of thin-film Cu(In,Ga)(S,Se)2 (CIGSSe) chalcopyrite and CdTe photovoltaic technologies with respect to reducing cost per watt of solar energy conversion, these approaches rely on elements that are either costly and/or rare in the earth{\textquoteright}s crust (e.g., In, Ga, Te) or that present toxicity issues (e.g., Cd), thereby potentially limiting these technologies in terms of future cost reduction and production growth. In order to develop a photovoltaic technology that is truly compatible with terawatt deployment, it is desirable to consider material systems that employ less toxic and lower cost elements, while maintaining the advantages of the chalcopyrite and CdTe materials with respect to appropriate direct band gap tunability over the solar spectrum, high device performance (e.g., \>10\% power conversion efficiency) and compatibility with low-cost manufacturing. In this review, the development of kesterite-based Cu2ZnSn(S,Se)4 (CZTSSe) thin-film solar cells, in which the indium and gallium from \{CIGSSe\} are replaced by the readily available elements zinc and tin, will be reviewed. While vacuum-deposited devices have enabled optimization within the compositional phase space and yielded selenium-free \{CZTS\} device efficiencies of as high as 6.8\%, more recently a liquid-based approach has been described that has enabled deposition of \{CZTSSe\} devices with power conversion efficiency of 9.7\%, bringing the kesterite-based technology into a range of potential commercial interest. Electrical characterization studies on these high-performance \{CZTSSe\} cells reveal some of the key loss mechanisms (e.g., dominant interface recombination, high series resistance and low minority carrier lifetime) that limit the cell performance. Further elucidation of these mechanisms, as well as building an understanding of long-term device stability, are required to help propel this relatively new technology forward.}, keywords = {Solution processing}, issn = {0927-0248}, doi = {http://dx.doi.org/10.1016/j.solmat.2010.11.028}, url = {http://www.sciencedirect.com/science/article/pii/S0927024810006719}, author = {David B. Mitzi and Oki Gunawan and Teodor K. Todorov and Kejia Wang and Supratik Guha} } @article {roskill2011, title = {Silicon and Ferrosilicon: Global Industry Markets and Outlook, 13th edition}, year = {2011}, institution = {Roskill}, address = {London}, isbn = {978 0 86214 573 6}, url = {http://www.roskill.com/reports/steel-alloys/silicon} } @article {Zwolenski2011, title = {A Theoretical Search for Efficient Dopants in Mg2X (X~=~Si, Ge, Sn) Thermoelectric Materials}, journal = {Journal of Electronic Materials}, volume = {40}, year = {2011}, month = {Jan-05-2011}, pages = {889 - 897}, issn = {0361-5235}, doi = {10.1007/s11664-011-1624-y}, url = {http://link.springer.com/10.1007/s11664-011-1624-yhttp://www.springerlink.com/index/pdf/10.1007/s11664-011-1624-y}, author = {Zwolenski, P. and Tobola, J. and Kaprzyk, S.} } @conference {Cousins2010, title = {Gen III: Improved Performance at Lower Cost}, booktitle = {35th IEEE Photovoltaic Specialists Conference}, year = {2010}, note = {
}, publisher = {IEEE}, organization = {IEEE}, address = {Honolulu, Hawaii}, author = {Peter J. Cousins and David D. Smith and Hsin-Chiao Luan and Jane Manning and Tim D. Dennis and Ann Waldhaue and Karen E. Wilson and Gabriel Harley and William P. Mulligan} } @article {NASA2010, title = {GISS Surface Temperature Analysis}, year = {2010}, note = {
}, url = {http://data.giss.nasa.gov/gistemp/graphs/}, author = {NASA} } @article {Juhaiman2010, title = {Green synthesis of tunable Cu(In1-xGax)Se2 nanoparticles using non-organic solvents}, journal = {Green Chemistry}, volume = {12}, year = {2010}, month = {Jan-01-2010}, pages = {1248}, issn = {1463-9262}, doi = {10.1039/c001813a}, url = {http://xlink.rsc.org/?DOI=c001813a}, author = {Al Juhaiman, Layla and Scoles, Ludmila and Kingston, David and Patarachao, Bussaraporn and Wang, Dashan and Bensebaa, Farid} } @article {Prabahar2010, title = {Optical properties of copper indium diselenide thin films}, journal = {Chalcogenide Letters}, volume = {7}, year = {2010}, pages = {49{\textendash}58}, author = {Prabahar, S and Balasubramanian, V and Suryanarayanan, N and Muthukumarasamy, N} } @article {Fonash2009, title = {Solar Cell Device Physics}, year = {2010}, note = {

1. Introduction

2. Material Properties and Device Physics Basic to Photovoltaics

3. Structures, Materials, and Scale

4. Homojunction Solar Cells

5. Semiconductor-semiconductor Heterojunction Solar Cells

6. Surface-barrier Solar Cells

7. Dye-sensitized Solar Cells

Appendicies

}, pages = {400}, publisher = {Academic Press}, edition = {Second Edition}, isbn = {978-0-12-374774-7}, url = {http://www.amazon.com/Solar-Cell-Device-Physics-Second/dp/0123747740/ref=sr_1_1?s=books\&ie=UTF8\&qid=1279652144\&sr=1-1}, author = {Stephen J. Fonash} } @article {Green2010, title = {Solar cell efficiency tables (version 35)}, journal = {Progress in Photovoltaics: Research and Applications}, volume = {18}, number = {2}, year = {2010}, note = {

Compendex

}, pages = {144{\textendash}150}, abstract = {

Consolidated tables showing an extensive listing of the highest independently confirmed efficiencies for solar cells and modules are presented. Guidelines for inclusion of results into these tables are outlined and new entries since July 2009 are reviewed. Copyright 2010 John Wiley Sons, Ltd.

}, keywords = {Conversion efficiency, Energy conversion, solar cells, Solar energy, Solar power generation}, issn = {10627995}, url = {http://dx.doi.org/10.1002/pip.974}, author = {Martin A Green and Keith Emery and Yoshihiro Hishikawa and Wilhelm Warta} } @article {Ranjbar2010, title = {Sonochemical synthesis, characterization and thermal and optical analysis of CuO nanoparticles}, journal = {Physica B: Condensed Matter}, volume = {405}, year = {2010}, month = {Jan-08-2010}, pages = {3096 - 3100}, issn = {09214526}, doi = {10.1016/j.physb.2010.04.021}, url = {http://linkinghub.elsevier.com/retrieve/pii/S0921452610003832}, author = {Ranjbar-Karimi, Reza and Bazmandegan-Shamili, Alireza and Aslani, Alireza and Kaviani, Karim} } @article {Motoyoshi2010, title = {Structure and photovoltaic activity of cupric oxide-based thin film solar cells}, journal = {Journal of the Ceramic Society of Japan}, volume = {118}, year = {2010}, month = {Jan-01-2010}, pages = {1021 - 1023}, issn = {1882-0743}, doi = {10.2109/jcersj2.118.1021}, url = {http://joi.jlc.jst.go.jp/JST.JSTAGE/jcersj2/118.1021?from=CrossRef}, author = {MOTOYOSHI, Ryosuke and OKU, Takeo and KIDOWAKI, Hiroki and SUZUKI, Atsushi and KIKUCHI, Kenji and KIKUCHI, Shiomi and JEYADEVAN, Balachandran} } @article {pizzini2010, title = {Towards solar grade silicon: Challenges and benefits for low cost photovoltaics}, journal = {Solar Energy Materials and Solar Cells}, volume = {94}, year = {2010}, month = {Jan-09-2010}, pages = {1528 - 1533}, issn = {09270248}, doi = {10.1016/j.solmat.2010.01.016}, url = {http://linkinghub.elsevier.com/retrieve/pii/S0927024810000310}, author = {Pizzini, Sergio} } @proceedings {Takamoto2010, title = {World{\textquoteright}s Highest Efficiency Triple-junction Solar Cells Fabricated by Inverted Layers Transfer Process}, year = {2010}, note = {
}, address = {Honolulu HI, USA}, author = {Takamoto, T. and Agui, T. and Yoshida, A. and Nakaido, K. and Juso, H. and Sasaki, K. and Nakamura, K. and Yamaguchi, H. and Kodama, T. and Washio, H. and Imazumi, M. and Takahashi, M.} } @article {Raksa2009, title = {Copper oxide thin film and nanowire as a barrier in ZnO dye-sensitized solar cells}, journal = {Thin Solid Films}, volume = {517}, year = {2009}, month = {Jan-07-2009}, pages = {4741 - 4744}, issn = {00406090}, doi = {10.1016/j.tsf.2009.03.027}, url = {http://linkinghub.elsevier.com/retrieve/pii/S0040609009004799}, author = {Raksa, Phathaitep and Nilphai, Sanpet and Gardchareon, Atcharawon and Choopun, Supab} } @article {chen2009crystal, title = {Crystal and electronic band structure of Cu2ZnSnX4 (X= S and Se) photovoltaic absorbers: first-principles insights}, journal = {Applied Physics Letters}, volume = {94}, year = {2009}, pages = {41903}, author = {Chen, Shiyou and Gong, XG and Walsh, Aron and Wei, Su-Huai} } @article {Katagiri2009, title = {Development of CZTS-based thin film solar cells}, journal = {Thin Solid Films}, volume = {517}, year = {2009}, pages = {2455{\textendash}2460}, author = {Hironori Katagiri and Jimbo, Kazuo and Maw, Win Shwe and Oishi, Koichiro and Yamazaki, Makoto and Araki, Hideaki and Takeuchi, Akiko} } @proceedings {Dimroth2009, title = {METAMORPHIC GaInP/GaInAs/Ge TRIPLE-JUNCTION SOLAR CELLS WITH > 41 \% EFFICIENCY}, year = {2009}, note = {
}, author = {F. Dimroth and W. Guter and J. Sch{\"o}ne and E. Welser and M. Steiner and E. Oliva and A. Wekkeli and G. Siefer and S.P. Philipps and A.W. Bett} } @article {Green2009, title = {The path to 25\% silicon solar cell efficiency: History of silicon cell evolution}, journal = {Progress in Photovoltaics: Research and Applications}, volume = {17}, year = {2009}, note = {
}, pages = {183-189}, author = {Martin A Green} } @article {Wurfel2005, title = {Physics of Solar Cells}, year = {2009}, note = {

1. Problems of the Energy Economy

2. Photons

3. Semiconductors

4. Conversion of Thermal Radiation into Chemical Energy

5. Conversion of Chemical Energy into Electrical Energy

6. Basic Structure of Solar Cells

7. Limitations on Energy Conversion in Solar Cells

8. Concepts for Improving the Efficiency of Solar Cells

9. Prospects for the Future

Solutions

Appendix

References

Index

}, pages = {183}, publisher = {Wiley-VCH}, edition = {2nd, updated and expanded edition}, address = {M{\"o}rlenbach, Germany}, isbn = {978-3-527-40857-3}, url = {http://www.amazon.com/Physics-Solar-Cells-Principles-Concepts/dp/3527404287}, author = {Peter W{\"u}rfel} } @article {Calixto2009, title = {Structural, optical, and electrical properties of tin sulfide thin films grown by spray pyrolysis}, journal = {Thin Solid Films}, volume = {517}, year = {2009}, month = {Jan-02-2009}, pages = {2497 - 2499}, issn = {00406090}, doi = {10.1016/j.tsf.2008.11.026}, url = {http://linkinghub.elsevier.com/retrieve/pii/S0040609008014077http://api.elsevier.com/content/article/PII:S0040609008014077?httpAccept=text/xmlhttp://api.elsevier.com/content/article/PII:S0040609008014077?httpAccept=text/plain}, author = {Calixto-Rodriguez, M. and Martinez, H. and Sanchez-Juarez, A. and Campos-Alvarez, J. and Tiburcio-Silver, A. and Calixto, M.E.} } @conference {Botero2009, title = {Study of SnS:Bi thin films prepared by sulfurization}, booktitle = {2009 34th IEEE Photovoltaic Specialists Conference (PVSC)2009 34th IEEE Photovoltaic Specialists Conference (PVSC)}, year = {2009}, publisher = {IEEE}, organization = {IEEE}, address = {Philadelphia, PA, USA}, isbn = {978-1-4244-2949-3}, doi = {10.1109/PVSC.2009.5411154}, url = {http://ieeexplore.ieee.org/lpdocs/epic03/wrapper.htm?arnumber=5411154}, author = {Botero, M. and Bartolo Perez, P. and Calderon, C. and Romero, E. and Gordillo, G.} } @article {wadia2009, title = {Surfactant-Assisted Hydrothermal Synthesis of Single phase Pyrite FeS 2 Nanocrystals}, journal = {Chemistry of Materials}, volume = {21}, year = {2009}, month = {Feb-07-2010}, pages = {2568 - 2570}, issn = {0897-4756}, doi = {10.1021/cm901273v}, url = {http://pubs.acs.org/doi/abs/10.1021/cm901273vhttp://pubs.acs.org/doi/pdf/10.1021/cm901273v}, author = {Wadia, Cyrus and Wu, Yue and Gul, Sheraz and Volkman, Steven K. and Guo, Jinghua and Alivisatos, A. Paul} } @article {steinhagen2009synthesis, title = {Synthesis of Cu2ZnSnS4 nanocrystals for use in low-cost photovoltaics}, journal = {Journal of the American Chemical Society}, volume = {131}, year = {2009}, pages = {12554{\textendash}12555}, author = {Steinhagen, Chet and Panthani, Matthew G and Akhavan, Vahid and Goodfellow, Brian and Koo, Bonil and Korgel, Brian A} } @article {Guo2009, title = {Synthesis of Cu2ZnSnS4 Nanocrystal Ink and Its Use for Solar Cells}, journal = {Journal of the American Chemical Society}, volume = {131}, year = {2009}, month = {Feb-08-2011}, pages = {11672 - 11673}, issn = {0002-7863}, doi = {10.1021/ja904981r}, url = {http://pubs.acs.org/doi/abs/10.1021/ja904981rhttp://pubs.acs.org/doi/pdf/10.1021/ja904981r}, author = {Guo, Qijie and Hillhouse, Hugh W. and Rakesh Agrawal} } @article {Tenorite2009, title = {Tenorite Mineral Data}, year = {2009}, url = {http://webmineral.com/data/Tenorite.shtml}, author = {D. Barthelmy} } @article {Bremner2008, title = {Analysis of tandem solar cell efficiencies under {AM1.5G} spectrum using a rapid flux calculation method}, journal = {Progress in Photovoltaics: Research and Applications}, volume = {16}, number = {3}, year = {2008}, pages = {225{\textendash}233}, abstract = {

We report the use of a rapid flux calculation method using incomplete Riemann zeta functions as a replacement for the {Bose-Einstein} integral in detailed balance calculations to study the efficiency of tandem solar cell stacks under the terrestrial {AM1.5G} spectrum and under maximum concentration. The maximum limiting efficiency for unconstrained and constrained tandem stacks of up to eight solar cells, under the {AM1.5G} spectrum and maximum concentration, are presented. The results found agree well with previously published results with one exception highlighting the precautions necessary when calculating for devices under the {AM1.5G} spectrum. The band gap sensitivities of two tandem solar cell stack arrangements of current interest were also assessed. In the case of a three solar cell tandem stack the results show a large design space and illustrate that the constrained case is more sensitive to band gap variations. Finally, the effect of a non-optimum uppermost band gap in a series constrained five solar cell tandem stack was investigated. The results indicate that a significant re-design is only required when the uppermost band gap is greater than the optimum value with a relatively small effect on the limiting efficiency. It is concluded that this rapid flux calculation method is a powerful tool for the analysis of tandem solar cells and is particularly useful for the design of devices where optimum band gaps may not be available. Copyright \© 2007 John Wiley \& Sons, Ltd.

}, doi = {10.1002/pip.799}, url = {http://dx.doi.org/10.1002/pip.799}, author = {S. P. Bremner and M. Y. Levy and Christiana B Honsberg} } @article {lehner2008, title = {Electrochemical Impedance Spectroscopy of Synthetic Pyrite Doped with As, Co, and Ni}, journal = {Journal of The Electrochemical Society}, volume = {155}, year = {2008}, month = {Jan-01-2008}, pages = {P61}, issn = {00134651}, doi = {10.1149/1.2885103}, url = {http://jes.ecsdl.org/cgi/doi/10.1149/1.2885103https://syndication.highwire.org/content/doi/10.1149/1.2885103}, author = {Lehner, Stephen and Ciobanu, Madalina and Savage, Kaye and Cliffel, David E.} } @article {Avellaneda2008, title = {Polymorphic Tin Sulfide Thin Films of Zinc Blende and Orthorhombic Structures by Chemical Deposition}, journal = {Journal of The Electrochemical Society}, volume = {155}, year = {2008}, month = {Jan-01-2008}, pages = {D517}, abstract = {Polycrystalline thin films (100{\textendash}450nm in thickness) of SnS formed from chemical baths of Sn(II) in acetic acid/HCl solution, triethanolamine, NH3 (aq), and thioacetamide are polymorphic consisting of zinc blende (ZB) and orthorhombic (OR) structures. The ZB structure for the SnS film, reported in this work for the first time, has a lattice constant a=0.579nm and a direct (forbidden) bandgap of 1.7eV , which is distinct from that of SnS(ZB) , about 1eV . The electrical conductivity of SnS(ZB) is 6{\texttimes}10-6 (Ωcm)-1 p-type, with activation energies for the conductivity of 0.5eV at room temperature and 1.6meV near 10K . When a SnS(ZB) film is heated in air at 500{\textdegree}C for 30min , part of it transforms to SnO2 and to SnS(OR) ; after 2h 30min at 550{\textdegree}C in air the film converts to transparent SnO2 . Such a film has a bandgap of 3.7eV and electrical conductivity, \~{}1 (Ωcm)-1 . Photovoltaic effect in different structures involving these films is presented. }, issn = {00134651}, doi = {10.1149/1.2917198}, url = {http://jes.ecsdl.org/cgi/doi/10.1149/1.2917198}, author = {Avellaneda, David and Nair, M. T. S. and Nair, P. K.} } @article {g2008, title = {REST2: High-performance solar radiation model for cloudless-sky irradiance, illuminance, and photosynthetically active radiation {\textendash} Validation with a benchmark dataset}, journal = {Solar Energy}, volume = {82}, year = {2008}, month = {Jan-03-2008}, pages = {272 - 285}, issn = {0038092X}, doi = {10.1016/j.solener.2007.04.008}, url = {https://linkinghub.elsevier.com/retrieve/pii/S0038092X07000990https://api.elsevier.com/content/article/PII:S0038092X07000990?httpAccept=text/xmlhttps://api.elsevier.com/content/article/PII:S0038092X07000990?httpAccept=text/plain}, author = {Gueymard, Christian A.} } @article {green_self-consistent_2008, title = {Self-consistent optical parameters of intrinsic silicon at 300~K including temperature coefficients}, journal = {Solar Energy Materials and Solar Cells}, volume = {92}, year = {2008}, pages = {1305{\textendash}1310}, abstract = {An updated tabulation is presented of the optical properties of intrinsic silicon, of particular interest in solar cell calculations. Improved values of absorption coefficient, refractive index and extinction coefficient at {300\&\#xa0;K} are tabulated over the 0.25{\textendash}1.45\&\#xa0;μm wavelength range at 0.01\&\#xa0;μm intervals. The self-consistent tabulation was derived from {Kramers{\textendash}Kronig} analysis of updated reflectance data deduced from the literature. The inclusion of normalised temperature coefficients allows extrapolation over a wide temperature range, with accuracy similar to that of available experimental data demonstrated over the {-24\&\#xa0;{\textdegree}C} to {200\&\#xa0;{\textdegree}C} range.}, keywords = {Absorption coefficient, optical properties, SILICON SOLAR CELLS}, issn = {0927-0248}, doi = {10.1016/j.solmat.2008.06.009}, url = {http://www.sciencedirect.com/science/article/pii/S0927024808002158}, author = {Martin A Green} } @article {Wenham2007, title = {Applied Photovoltaics}, year = {2007}, note = {

Introduction

1. The Characteristics of Sunlight

2. Semiconductors and P-N Junctions

3. The Behavior of Solar Cells

4. Cell Properties and Design

5. PV Cell Interconnection and Module Fabrication

6. Stand-Alone Photovoltaic System Components

7. Designing Stand-Alone Photovoltaic Systems

8. Specific Purpose Photovoltaic Applications

9. Remote Area Power Supply Systems

10. Grid-Connected Photovoltaic Systems

11. Photovoltaic Water Pumping System Components

12. PV Water Pumping System Design

Appendicies

Index

}, pages = {317}, publisher = {Earthscan}, address = {London, UK}, abstract = {
}, isbn = {1-84407-401-3}, url = {http://www.amazon.com/Applied-Photovoltaics-Stuart-R-Wenham/dp/1844074013/ref=sr_1_1?ie=UTF8\&s=books\&qid=1279558328\&sr=8-1}, author = {Wenham, S.R. and Martin A Green and Watt, M. E. and R. Corkish} } @article {rieder2007, title = {Arsenic in iron disulfides in a brown coal from the North Bohemian Basin, Czech Republic}, journal = {International Journal of Coal Geology}, volume = {71}, year = {2007}, month = {Jan-07-2007}, pages = {115 - 121}, issn = {01665162}, doi = {10.1016/j.coal.2006.07.003}, url = {http://linkinghub.elsevier.com/retrieve/pii/S0166516206001480http://api.elsevier.com/content/article/PII:S0166516206001480?httpAccept=text/xmlhttp://api.elsevier.com/content/article/PII:S0166516206001480?httpAccept=text/plain}, author = {Rieder, Milan and Crelling, John C. and {\v S}ustai, Ond{\v r}ej and Dr{\'a}bek, Milan and Weiss, Zden{\v e}k and Klementov{\'a}, Mariana} } @article {Atanassov2007, title = {On the band diagram of Mg2Si/Si heterojunction as deduced from optical constants dispersions}, journal = {Thin Solid Films}, volume = {515}, year = {2007}, month = {Jan-01-2007}, pages = {3046 - 3051}, issn = {00406090}, doi = {10.1016/j.tsf.2006.08.015}, url = {http://linkinghub.elsevier.com/retrieve/pii/S0040609006010054}, author = {Atanassov, A. and Baleva, M.} } @article {Tan2007, title = {Crystallinity and surface effects on Young{\textquoteright}s modulus of CuO nanowires}, journal = {Applied Physics Letters}, volume = {90}, year = {2007}, month = {Jan-01-2007}, pages = {163112}, issn = {00036951}, doi = {10.1063/1.2723654}, url = {http://link.aip.org/link/APPLAB/v90/i16/p163112/s1\&Agg=doi}, author = {Tan, E. P. S. and Zhu, Y. and Yu, T. and Dai, L. and Sow, C. H. and Tan, V. B. C. and Lim, C. T.} } @article {Park2007, title = {Effects of Copper Oxide/Gold Electrode as the Source-Drain Electrodes in Organic Thin-Film Transistors}, journal = {Electrochemical and Solid-State Letters}, volume = {10}, year = {2007}, month = {Jan-01-2007}, pages = {H340}, issn = {10990062}, doi = {10.1149/1.2774683}, url = {http://esl.ecsdl.org/cgi/doi/10.1149/1.2774683}, author = {Park, Jeong-Woo and Baeg, Kang-Jun and Ghim, Jieun and Kang, Seok-Ju and Park, Jeong-Ho and Kim, Dong-Yu} } @proceedings {DeCeuster2007, title = {Low Cost, High Volume Production of >22\% Efficiency Silicon Solar Cells}, year = {2007}, note = {
}, author = {De Ceuster, D. and P. Cousins and D. Rose and M. Cudzinovic and W. Mulligan} } @article {Gumus2007, title = {Optical and structural properties of manganese sulfide thin films}, journal = {Optical Materials}, volume = {29}, year = {2007}, month = {Jan-05-2007}, pages = {1183 - 1187}, abstract = {Highly transparent crystalline manganese sulfide (γ-MnS) thin films were prepared on glass substrate by chemical bath deposition (CBD) method at room temperature (27 {\textdegree}C). The refractive index n(λ), extinction coefficient k(λ) and film thickness t are evaluated from spectrophotometric transmittance spectrum by using envelope method. The optical band gap of the film was estimated to be 3.88 eV. XRD measurements show that the MnS films are crystallized in the wurtzite phase and present a preferential orientation along the c-axis. The effect of trisodium citrate on crystalline films has been determined. The grain size of the film is estimated to be 29.8 nm using by the Scherrer{\textquoteright}s formula.}, issn = {09253467}, doi = {10.1016/j.optmat.2006.04.012}, url = {http://linkinghub.elsevier.com/retrieve/pii/S0925346706001972}, author = {G{\"u}m{\"u}{\c s}, C. and Uluta{\c s}, C. and Ufuktepe, Y.} } @article {Pysch2007, title = {A review and comparison of different methods to determine the series resistance of solar cells}, journal = {Solar Energy Materials and Solar Cells}, volume = {91}, year = {2007}, note = {
}, month = {11/2007}, pages = {1698 - 1706}, issn = {09270248}, doi = {10.1016/j.solmat.2007.05.026}, author = {PYSCH, D and A. Mette and Stefan W. Glunz} } @article {Mette2007, title = {Series resistance characterization of industrial silicon solar cells with screen-printed contacts using hotmelt paste}, journal = {Progress in Photovoltaics: Research and Applications}, volume = {15}, year = {2007}, note = {
}, pages = {493-505}, author = {A. Mette and et al} } @article {Hansen2006, title = {Global temperature change}, journal = {Proceedings of the National Academy of Sciences}, volume = {103}, year = {2006}, note = {
}, month = {09/2006}, pages = {14288 - 14293}, issn = {1091-6490}, doi = {10.1073/pnas.0606291103}, author = {Hansen, J.} } @conference {bunea_low_2006, title = {Low Light Performance of Mono-Crystalline Silicon Solar Cells}, booktitle = {4th World Conference on Photovoltaic Energy Conference}, year = {2006}, month = {2006}, pages = {1312{\textendash}1314}, address = {Waikoloa, HI}, doi = {10.1109/WCPEC.2006.279655}, url = {http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=4059885\&tag=1}, author = {Gabriela Bunea and Karen Wilson and Yevgeny Meydbray and Matthew Campbell and Denis De Ceuster} } @article {Devika2006, title = {Microstructure dependent physical properties of evaporated tin sulfide films}, journal = {Journal of Applied Physics}, volume = {100}, year = {2006}, month = {Jan-01-2006}, pages = {023518}, abstract = {In the field of photovoltaics, semiconductors of the III-V group such as GaAs and InP have been considered as the most efficient absorber materials due to their direct energyband gap and high mobility. In these compounds, arsenic and phosphorus are highly toxic and expensive. In this work we present systematic preparation of low cost SnS thin films and characterize these films to test their suitability for photovoltaic applications. We have observed that the films (with thickness ≅0.5μm) grown at the substrate temperature of 275{\textdegree}C exhibit a low resistive single SnS phase and have a direct optical band gap of 1.35eV with an absorption coefficient of \~{}105cm-1. SnSfilms could be alternative semiconductor materials as absorbers for the fabrication of photovoltaic devices.}, issn = {00218979}, doi = {10.1063/1.2216790}, url = {http://scitation.aip.org/content/aip/journal/jap/100/2/10.1063/1.2216790}, author = {Devika, M. and Ramakrishna Reddy, K. T. and Koteeswara Reddy, N. and Ramesh, K. and Ganesan, R. and Gopal, E. S. R. and Gunasekhar, K. R.} } @article {Chauhan2006, title = {Preparation and characterization of nanostructured CuO thin films for photoelectrochemical splitting of water}, journal = {Bulletin of Materials Science}, volume = {29}, year = {2006}, pages = {709}, author = {Chauhan, Diwakar and Satsangi, VR and Dass, Sahab and Shrivastav, Rohit} } @article {Levy2006, title = {Rapid and precise calculations of energy and particle flux for detailed-balance photovoltaic applications}, journal = {Solid-State Electronics}, volume = {50}, year = {2006}, pages = {1400-1405}, author = {M. Y. Levy and Christiana B Honsberg} } @book {Schroder2006, title = {Semiconductor material and device characterization}, year = {2006}, publisher = {IEEE Press; Wiley}, organization = {IEEE Press; Wiley}, edition = {3rd edition}, address = {Piscataway NJ; Hoboken N.J.}, isbn = {9780471739067}, author = {Dieter Schroder} } @article {Serin2005, title = {Annealing effects on the properties of copper oxide thin films prepared by chemical deposition}, journal = {Semiconductor Science and Technology}, volume = {20}, year = {2005}, month = {Jan-05-2005}, pages = {398 - 401}, issn = {0268-1242}, doi = {10.1088/0268-1242/20/5/012}, url = {http://stacks.iop.org/0268-1242/20/i=5/a=012?key=crossref.e80ad675d4be3b601f49e0d1d5cceb0d}, author = {Serin, Necmi and Serin, {\"u}lay and {\c S}eyda Horzum and {\c C}elik, Yasemin} } @article {Serin2005, title = {Annealing effects on the properties of copper oxide thin films prepared by chemical deposition}, journal = {Semiconductor Science and Technology}, volume = {20}, year = {2005}, pages = {398}, abstract = {We have investigated the annealing effect on the structural, optical and electrical properties of copper oxide films prepared on glass substrates by chemical deposition. The films were annealed in air for different temperatures ranging from 200 to 350 {\textdegree}C. X-ray diffraction patterns showed that the films as-deposited and annealed at 200 and 250 {\textdegree}C are of cuprite structure with composition Cu 2 O. Annealing at 300 {\textdegree}C converts these films to CuO. This conversion is accompanied by a shift in the optical band gap from 2.20 eV to 1.35 eV. Also this conversion was obtained by the dc electrical conductivity and FTIR spectroscopy measurements.}, url = {http://stacks.iop.org/0268-1242/20/i=5/a=012}, author = {Necmi Serin and T{\"u}lay Serin and {\c S}eyda Horzum and Yasemin {\c C}elik} } @proceedings {Swanson2005, title = {Approaching the 29\% limit efficiency of silicon solar cells}, year = {2005}, note = {
}, pages = {889-94}, publisher = {01/2005}, address = {Lake buena Vista, FL, USA}, author = {Richard M Swanson} } @article {Sato2005, title = {Characterization of electrical properties and photosensitivity of SnS thin films prepared by the electrochemical deposition method}, journal = {Solar Energy Materials and Solar Cells}, volume = {85}, year = {2005}, month = {Jan-01-2005}, pages = {153 - 165}, abstract = {Using the electrochemical deposition (ECD) method, we prepared tin sulfide thin films, which are suitable for the absorption layer in solar cells because of its bandgap energy (\~{}1 eV). We first optimized pulse-form biasing for ECD by characterizing deposited samples with scanning electron microscope, Auger electron spectroscopy and X-ray diffraction measurements. Then, we investigated the electrical properties of deposited SnS thin films and the properties of contacts with several different metals. Furthermore, we observed the photoconductivity of the films by means of photoelectrochemical measurements. From these results, we confirmed that the SnS thin films show p-type conduction.}, issn = {09270248}, doi = {10.1016/j.solmat.2004.04.014}, url = {http://linkinghub.elsevier.com/retrieve/pii/S0927024804002077http://api.elsevier.com/content/article/PII:S0927024804002077?httpAccept=text/xmlhttp://api.elsevier.com/content/article/PII:S0927024804002077?httpAccept=text/plain}, author = {Sato, Naoya and Ichimura, Masaya and Arai, Eisuke and Yamazaki, Yoshihisa} } @article {Koteeswara2005, title = {Electrical properties of spray pyrolytic tin sulfide films}, journal = {Solid-State Electronics}, volume = {49}, year = {2005}, month = {Jan-06-2005}, pages = {902 - 906}, abstract = {Tin sulfide (SnxSy) films were prepared using spray pyrolysis technique at different substrate temperatures (Ts), (100{\textendash}450 {\textdegree}C) on Corning 7059 glass substrates. The physical parameters such as electrical resistivity, Hall mobility and net carrier density of the films were determined at room temperature. The films grown in the substrate temperature range, 300{\textendash}375 {\textdegree}C, were found to be p-type conducting. These SnS films showed average electrical resistivity of \~{}30 Ω cm, Hall mobility of \~{}130 cm2/V s and carrier density, >1015 cm-3. The temperature dependence of electrical conductivity of the films was also studied and the activation energies evaluated. The results obtained were discussed and reported.}, issn = {00381101}, doi = {10.1016/j.sse.2005.03.003}, url = {http://linkinghub.elsevier.com/retrieve/pii/S0038110105000845}, author = {Koteeswara Reddy, N. and Ramakrishna Reddy, K.T.} } @article {Benhelal2005, title = {First-principles calculations of the structural, electronic and optical properties of IIA-IV antifluorite compounds}, journal = {physica status solidi (b)}, volume = {242}, year = {2005}, month = {Jan-08-2005}, pages = {2022 - 2032}, issn = {0370-1972}, doi = {10.1002/(ISSN)1521-395110.1002/pssb.v242:1010.1002/pssb.200540063}, url = {http://doi.wiley.com/10.1002/\%28ISSN\%291521-3951http://doi.wiley.com/10.1002/pssb.v242:10http://doi.wiley.com/10.1002/pssb.200540063}, author = {Benhelal, O. and Chahed, A. and Laksari, S. and Abbar, B. and Bouhafs, B. and Aourag, H.} } @article {Caracas2005, title = {First-principles study of the electronic properties of A2B3 minerals, with A=Bi,Sb and B=S,Se}, journal = {Physics and Chemistry of Minerals}, volume = {32}, year = {2005}, month = {Jan-07-2005}, pages = {295 - 300}, abstract = {We determine the valence electron density and the electron band structure of stibnite, bismutinite, guanajuatite and antimonelite using the density functional theory. All the compounds present similar electronic properties and exhibit a quasi-1D character. We perform a detailed analysis of the charge topology, the atomic static charges and volumes.}, issn = {0342-1791}, doi = {10.1007/s00269-005-0470-y}, url = {http://rruff.geo.arizona.edu/AMS/authors/Caracas\%20R}, author = {Caracas, Razvan and Gonze, Xavier} } @article {Bothe2005, title = {Fundamental boron-oxygen-related carrier lifetime limit in mono- and multicrystalline silicon}, journal = {Progress in Photovoltaics: Research and Applications}, volume = {13}, year = {2005}, note = {
}, month = {06/2005}, pages = {287 - 296}, issn = {1099-159X}, doi = {10.1002/pip.586}, author = {Bothe, Karsten and Sinton, Ron and Jan Schmidt} } @article {Parhizkar2005, title = {Nanocrystalline CuO films prepared by pyrolysis of Cu-arachidate LB multilayers}, journal = {Colloids and Surfaces A: Physicochemical and Engineering Aspects}, volume = {257-258}, year = {2005}, month = {Jan-05-2005}, pages = {277 - 282}, issn = {09277757}, doi = {10.1016/j.colsurfa.2004.10.029}, url = {http://linkinghub.elsevier.com/retrieve/pii/S0927775704007320}, author = {Parhizkar, M. and Singh, Sukhvinder and Nayak, P.K. and Kumar, Nigvendra and Muthe, K.P. and Gupta, S.K. and Srinivasa, R.S. and Talwar, S.S. and Major, S.S.} } @article {Fuyuki2005, title = {Photographic surveying of minority carrier diffusion length in polycrystalline silicon solar cells by electroluminescence}, journal = {Applied Physics Letters}, volume = {86}, number = {26}, year = {2005}, pages = {262108}, publisher = {AIP}, keywords = {carrier lifetime, electroluminescence, elemental semiconductors, MINORITY CARRIERS, SILICON, solar cells}, doi = {10.1063/1.1978979}, url = {http://link.aip.org/link/?APL/86/262108/1}, author = {Takashi Fuyuki and Hayato Kondo and Tsutomu Yamazaki and Yu Takahashi and Yukiharu Uraoka} } @article {Goetzberger2005, title = {Photovoltaic Solar Energy Generation}, year = {2005}, note = {

1. What is Photovoltaics?

2. Physics of Solar Cells

3. Silicon Solar Cell Material and Technology

4. Crystalline Thin-Film Silicon

5. Other Materials, New Concepts

6. Solar Cells and Solar Modules

7. PV Systems

8. PV Systems Installation Possibilities

9. Environmental Impacts by PV Systems

10. Efficinecy and Performance of PV Systems

11. PV Markets Support Measures and Costs

12. The Future PV

13. Other (Perhaps Competing) CO2-Free Energy Sources

14. Popular Killing Arguments Against PV

References

Index

}, pages = {232}, publisher = {Springer}, address = {Berlin, Germany}, isbn = {3-540-23676-7}, url = {http://www.amazon.com/Photovoltaic-Solar-Energy-Generation-Goetzberger/dp/3642062601/ref=sr_1_2?s=books\&ie=UTF8\&qid=1279649098\&sr=1-2}, author = {Adolf Goetzberger and Volker Uwe Hoffmann} } @article {Anandan2005, title = {Room temperature growth of CuO nanorod arrays on copper and their application as a cathode in dye-sensitized solar cells}, journal = {Materials Chemistry and Physics}, volume = {93}, year = {2005}, month = {Jan-09-2005}, pages = {35 - 40}, issn = {02540584}, doi = {10.1016/j.matchemphys.2005.02.002}, url = {http://linkinghub.elsevier.com/retrieve/pii/S0254058405001197}, author = {Anandan, Sambandam and Wen, Xiaogang and Yang, Shihe} } @article {Tani2005, title = {Thermoelectric properties of Bi-doped Mg2Si semiconductors}, journal = {Physica B: Condensed Matter}, volume = {364}, year = {2005}, month = {Jan-07-2005}, pages = {218 - 224}, issn = {09214526}, doi = {10.1016/j.physb.2005.04.017}, url = {http://linkinghub.elsevier.com/retrieve/pii/S092145260500709X}, author = {Tani, Jun-ichi and Kido, Hiroyasu} } @article {Henrie2004, title = {Electronic color charts for dielectric films on silicon}, journal = {Optics Express}, volume = {12}, number = {7}, year = {2004}, note = {
}, pages = {1464{\textendash}1469}, abstract = {

This paper presents the calculation of the perceived color of dielectric films on silicon. A procedure is shown for computing the perceived color for an arbitrary light source, light incident angle, and film thickness. The calculated color is converted into {RGB} parameters that can be displayed on a color monitor, resulting in the generation of electronic color charts for dielectric films. This paper shows generated electronic color charts for both silicon dioxide and silicon nitride films on silicon.

}, keywords = {Color, measurement, optical properties, Thin films}, doi = {10.1364/OPEX.12.001464}, url = {http://www.opticsexpress.org/abstract.cfm?URI=oe-12-7-1464}, author = {Justin Henrie and Spencer Kellis and Stephen Schultz and Aaron Hawkins} } @article {Jain2004, title = {Exact analytical solutions of the parameters of real solar cells using Lambert W-function}, journal = {Solar Energy Materials and Solar Cells}, volume = {81}, year = {2004}, month = {Jun-02-2004}, pages = {269 - 277}, issn = {09270248}, doi = {10.1016/j.solmat.2003.11.018}, url = {https://linkinghub.elsevier.com/retrieve/pii/S0927024803002605https://api.elsevier.com/content/article/PII:S0927-0248(03)00260-5?httpAccept=text/xmlhttps://api.elsevier.com/content/article/PII:S0927-0248(03)00260-5?httpAccept=text/plain}, author = {Jain, A} } @article {Kale2004, title = {Influence of air annealing on the structural, optical and electrical properties of chemically deposited CdSe nano-crystallites}, journal = {Applied Surface Science}, volume = {223}, year = {2004}, month = {Jan-02-2004}, pages = {343 - 351}, issn = {01694332}, doi = {10.1016/j.apsusc.2003.09.022}, url = {http://linkinghub.elsevier.com/retrieve/pii/S0169433203011541}, author = {Kale, R.B and Lokhande, C.D} } @article {Ehm2004, title = {Pressure-induced structural phase transition in the IV{\textendash}VI semiconductor SnS}, journal = {Journal of Physics: Condensed Matter}, volume = {16}, year = {2004}, month = {Feb-06-2004}, pages = {3545 - 3554}, abstract = {The structural behaviour of SnS under high-pressure has been investigated by angular dispersive synchrotron powder diffraction up to 38.5 GPa. A structural phase transition from orthorhombic α-SnS to monoclinic γ-SnS was observed at 18.15 GPa. The fit of a Birch{\textendash}Murnaghan equation-of-state gave the volume at zero pressure of V0 = 192.6(3) {\r A}3, the bulk modulus at zero pressure of B0 = 36.6(9) GPa and the pressure derivative of the bulk modulus B{\textquoteright}=5.5(2) for α-SnS and V0 = 160(1) {\r A}, B0 = 86.0(5) GPa and B{\textquoteright}=4 for γ-SnS. The improper ferro-elastic transition is of first-order and is accompanied by a large volume discontinuity of about 9.1\%. The phase transition can be described in terms of a group/subgroup relationship. The doubling of the unit cell indicates a wavevector (1/2,0,1/2) at the U-point in the Brillouin zone.}, issn = {0953-8984}, doi = {10.1088/0953-8984/16/21/004}, url = {http://stacks.iop.org/0953-8984/16/i=21/a=004?key=crossref.fbc017dcad3d417136827c57d4ea2141}, author = {Ehm, L and Knorr, K and Dera, P and Krimmel, A and Bouvier, P and Mezouar, M} } @book {Madelung2004, title = {Semiconductors Data Handbook}, year = {2004}, pages = {691}, publisher = {Springer}, organization = {Springer}, address = {Berlin}, isbn = {9783642188657 3642188656}, url = {http://www.amazon.com/Semiconductors-Data-Handbook-Otfried-Madelung/dp/3540404880}, author = {Madelung, O} } @book {Madelung2004b, title = {Semiconductors Data Handbook}, year = {2004}, pages = {815-835}, publisher = {Springer}, organization = {Springer}, address = {Berlin}, isbn = {9783642188657 3642188656}, url = {http://www.amazon.com/Semiconductors-Data-Handbook-Otfried-Madelung/dp/3540404880}, author = {Madelung, O} } @article {Downs2003, title = {The American Mineralogist Crystal Structure Database}, journal = {American Mineralogist}, volume = {88}, year = {2003}, chapter = {247}, author = {R. T. Downs and M. Hall-Wallace} } @article {Ralph2003, title = {Bismuthinite}, year = {2003}, url = {http://www.mindat.org/min-686.html}, author = {Ralph, J. R} } @proceedings {Honsberg2003, title = {Dependence of aluminium alloying on solar cell processing conditions}, year = {2003}, note = {
}, author = {Christiana B Honsberg and Anwar, K.K. and Mehrvarz, H.R. and Cotter, J.E. and Wenham, S.R.} } @article {rudmann2003effects, title = {Effects of NaF coevaporation on structural properties of Cu (In, Ga) Se2 thin films}, journal = {Thin Solid Films}, volume = {431}, year = {2003}, pages = {37{\textendash}40}, author = {Rudmann, D and Bilger, G and Kaelin, M and Haug, F-J and Zogg, H and Tiwari, AN} } @article {Imai2003, title = {Electronic structures of semiconducting alkaline-earth metal silicides}, journal = {Journal of Alloys and Compounds}, volume = {358}, year = {2003}, month = {Jan-08-2003}, pages = {257 - 263}, issn = {09258388}, doi = {10.1016/S0925-8388(03)00037-9}, url = {http://linkinghub.elsevier.com/retrieve/pii/S0925838803000379}, author = {Imai, Yoji and Watanabe, Akio and Mukaida, Masakazu} } @article {Luque2003, title = {Handbook of Photovoltaic Science and Engineering}, year = {2003}, note = {

1. Status, Trends, Challenges and the Bright Future of Solar Electricity from Photovoltaics.\ 

2. Motivation for Photovoltaic Application and Development

3. The Physics of the Solar Cell

4. Theoretical Limits of Photovoltaic\ Conversion

5. Solar Grade Silicon Feedstock\ 

6. Bulk Crystal Growth and Wafering\ for PV

7. Crystalline Silicon Solar Cells and Modules\ 

8. Thin-film Silicon Solar Cells\ 

9. High-efficiency III-V Multijunction\ Solar Cells

10. Space Solar Cells and Arrays

11. Photovoltaic Concentrators\ 

12. Amorphous Silicon-based Solar Cells\ 

13. Cu(InGa)Se2 Solar Cells

14. Cadmium Telluride Solar Cells

15. Dye-sensitized Solar Cells

16. Measurement and Characterization of Solar Cells and Modules

17. Photovoltaic Systems

18. Electrochemical Storage for Photovoltaics

19. Power Conditioning for Photovoltaic Power Systems

20. Energy Collected and Delivered by PV Modules

21. Economic Analysis and Environmental Aspects of Photovoltaic\ Systems

22. PV in Architecture

23. Photovoltaics\ and Development

24. Financing PV Growth\ 

Index

}, pages = {1117}, publisher = {John Wiley \& Sons Ltd.}, address = {Chichester, England}, isbn = {0-471-49196-9}, url = {http://www.amazon.com/Handbook-Photovoltaic-Science-Engineering-Antonio/dp/0471491969/ref=pd_sim_b_7}, author = {Luque, A. and Hegedus, S.} } @article {Nelson2003, title = {The Physics of Solar Cells}, year = {2003}, note = {

1. Introduction

2. Photons In, Electrons Out: Basic Principles of PV

3. Electrons and Holes and Semiconductors

4. Generation and Recombination

5. Junctions

6. Analysis of the p-n Junction

7. Monocrystalline Solar Cells

8. Thin Film Solar Cells

9. Managing Light

10. Over the Limit: Strategies for High Efficiency

Solutions

Index

}, pages = {355}, publisher = {Imperial College Press}, address = {London, UK}, abstract = {
}, isbn = {1-86094-340-3}, url = {http://www.amazon.com/Physics-Solar-Properties-Semiconductor-Materials/dp/1860943497}, author = {Jenny Nelson} } @article {Altermatt2003, title = {Reassessment of the intrinsic carrier density in crystalline silicon in view of band-gap narrowing}, journal = {Journal of Applied Physics}, volume = {93}, year = {2003}, month = {Jan-01-2003}, pages = {1598}, abstract = {The commonly used value of the intrinsic carrier density of crystalline silicon at 300 K is ni=1.00{\texttimes}1010 cm-3. It was experimentally determined by Sproul and Green, J. Appl. Phys. 70, 846 (1991), using specially designed solar cells. In this article, we demonstrate that the Sproul and Green experiment was influenced by band-gap narrowing, even though the dopant density of their samples was low (1014 to 1016 cm-3). We reinterpret their measurements by numerical simulations with a random-phase approximation model for band-gap narrowing, thereby obtaining ni=9.65{\texttimes}109 cm-3 at 300 K. This value is consistent with results obtained by Misiakos and Tsamakis, J. Appl. Phys. 74, 3293 (1993), using capacitance measurements. In this way, long-prevailing inconsistencies between independent measurement techniques for the determination of ni are resolved.}, issn = {00218979}, doi = {10.1063/1.1529297}, author = {Pietro P Altermatt and Schenk, Andreas and Geelhaar, Frank and Heiser, Gernot} } @article {Reda2003, title = {Solar Position Algorithm for Solar Radiation Applications}, number = {TP-560-34302, R}, year = {2003}, note = {
}, month = {2003}, author = {Reda, I and Andreas, A} } @article {muscat2000, title = {First-principles studies of the structural and electronic properties of pyrite}, journal = {Physical Review B}, volume = {65}, year = {2002}, month = {Jan-01-2002}, issn = {0163-1829}, doi = {10.1103/PhysRevB.65.054107}, url = {https://link.aps.org/doi/10.1103/PhysRevB.65.054107http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.65.054107/fulltexthttp://link.aps.org/article/10.1103/PhysRevB.65.054107}, author = {Muscat, Joseph and Hung, Andrew and Russo, Salvy and Yarovsky, Irene} } @article {Kerr2002, title = {General parameterization of Auger recombination in crystalline silicon}, journal = {Journal of Applied Physics}, volume = {91}, number = {4}, year = {2002}, pages = {2473-2480}, publisher = {AIP}, keywords = {Auger effect, carrier lifetime, electron-hole recombination, elemental semiconductors, SILICON}, doi = {10.1063/1.1432476}, url = {http://link.aip.org/link/?JAP/91/2473/1}, author = {Mark J Kerr and Andr{\'e}s Cuevas} } @article {Kerr2002, title = {Generalized analysis of quasi-steady-state and transient decay open circuit voltage measurements}, journal = {Journal of Applied Physics}, volume = {91}, year = {2002}, note = {
}, month = {2002}, pages = {399}, abstract = {The current{\textendash}voltage characteristics of solar cells and photodiodes can be determined by measuring the open-circuit voltage as a function of a slowly varying light intensity. This article presents a detailed theoretical analysis and interpretation of such quasi-steady-state Voc measurements (QssVoc). The ability of this analysis to accurately obtain the true steady-state device characteristics even in the case of high lifetime, high resistivity silicon devices is demonstrated experimentally. The QssVoc technique can be used to determine the minority carrier lifetime, and the new generalized analysis is required to do this accurately. An important outcome is that solar cell and diode device characteristics can be obtained from measurements of either the photoconductance or the open-circuit voltage, even using transient techniques.}, issn = {00218979}, doi = {10.1063/1.1416134}, author = {Mark J Kerr and Andr{\'e}s Cuevas and Ronald A. Sinton} } @book {Brady2002, title = {Materials handbook: [foundation for the science of metallurgy; compares the advantages and disadvantages of different manufacturing processes; comprehensive in approach].}, year = {2002}, publisher = {{McGraw-Hill}}, organization = {{McGraw-Hill}}, address = {New York [u.a.]}, isbn = {{007136076X} 9780071360760}, url = {http://www.scribd.com/doc/6395226/Materials-Handboook}, author = {Brady, George S and Clauser, Henry R and Vaccari, John A} } @article {wooster1953, title = {Physical properties and atomic arrangements in crystals}, journal = {Reports on Progress in Physics}, volume = {16}, year = {2002}, month = {May-08-2002}, pages = {62 - 82}, issn = {00344885}, doi = {10.1088/0034-4885/16/1/302}, url = {http://stacks.iop.org/0034-4885/16/i=1/a=302?key=crossref.19db72555e28e5cd250540ab6a946500}, author = {Wooster, W A} } @article {altermatt2002, title = {Specifying targets of future research in photovoltaic devices containing pyrite (FeS2) by numerical modelling}, journal = {Solar Energy Materials and Solar Cells}, volume = {71}, year = {2002}, month = {Jan-02-2002}, pages = {181 - 195}, issn = {09270248}, doi = {10.1016/S0927-0248(01)00053-8}, url = {http://linkinghub.elsevier.com/retrieve/pii/S0927024801000538http://api.elsevier.com/content/article/PII:S0927024801000538?httpAccept=text/xmlhttp://api.elsevier.com/content/article/PII:S0927024801000538?httpAccept=text/plain}, author = {Pietro P Altermatt and Kiesewetter, Tobias and Ellmer, Klaus and Tributsch, Helmut} } @article {Zhao2001, title = {24.5\% efficiency PERT silicon solar cells on SEH MCZ substrates and cell performance on other SEH CZ and FZ substrates}, journal = {Solar Energy Materials and Solar Cells}, volume = {66}, year = {2001}, note = {
}, pages = {27 - 36}, issn = {09270248}, doi = {10.1016/S0927-0248(00)00155-0}, author = {Zhao, J. and Aihua Wang and Martin A Green} } @article {Brody2001, title = {Analytical approximation of effective surface recombination velocity of dielectric-passivated p-type silicon}, journal = {Solid-State Electronics}, volume = {45}, year = {2001}, month = {Jan-09-2001}, pages = {1549 - 1557}, issn = {00381101}, doi = {10.1016/S0038-1101(01)00169-1}, url = {http://linkinghub.elsevier.com/retrieve/pii/S0038110101001691http://api.elsevier.com/content/article/PII:S0038110101001691?httpAccept=text/xmlhttp://api.elsevier.com/content/article/PII:S0038110101001691?httpAccept=text/plain}, author = {Brody, Jed and Rohatgi, Ajeet} } @article {BlancoMuriel2001, title = {Computing the solar vector}, journal = {Solar Energy}, volume = {70}, number = {5}, year = {2001}, note = {
}, pages = {431 - 441}, keywords = {Solar tracking}, issn = {0038-092X}, doi = {DOI: 10.1016/S0038-092X(00)00156-0}, url = {http://www.sciencedirect.com/science/article/B6V50-42G6KWJ-5/2/a61a5c50128325f281ca2e33e01de993}, author = {Manuel Blanco-Muriel and Diego C. Alarc{\'o}n-Padilla and Teodoro L{\'o}pez-Moratalla and Mart{\'I}n Lara-Coira} } @article {Blanco2001, title = {Computing the solar vector}, journal = {Solar Energy}, volume = {70}, year = {2001}, month = {Jan-01-2001}, pages = {431 - 441}, issn = {0038092X}, doi = {10.1016/S0038-092X(00)00156-0}, url = {http://linkinghub.elsevier.com/retrieve/pii/S0038092X00001560http://api.elsevier.com/content/article/PII:S0038092X00001560?httpAccept=text/xmlhttp://api.elsevier.com/content/article/PII:S0038092X00001560?httpAccept=text/plain}, author = {Blanco-Muriel, Manuel and Alarc{\'o}n-Padilla, Diego C. and L{\'o}pez-Moratalla, Teodoro and Lara-Coira, Mart{\'I}n} } @article {Glunz2001, title = {Degradation of carrier lifetime in Cz silicon solar cells}, journal = {Solar Energy Materials and Solar Cells}, volume = {65}, number = {1-4}, year = {2001}, note = {
}, pages = {219 - 229}, keywords = {Defects}, issn = {0927-0248}, doi = {DOI: 10.1016/S0927-0248(00)00098-2}, url = {http://www.sciencedirect.com/science/article/B6V51-419BGN3-11/2/7ba9d473113c89089b6e79c1cd46775f}, author = {Stefan W. Glunz and S. Rein and W. Warta and J. Knobloch and W. Wettling} } @article {Campbell2001, title = {High performance light trapping textures for monocrystalline silicon solar cells}, journal = {Solar Energy Materials and Solar Cells}, volume = {65}, year = {2001}, month = {Jan-01-2001}, pages = {369 - 375}, abstract = {Two novel texture schemes for the front of a c-Si silicon wafer solar cell are presented. The {\textquotedblleft}bipyramid{\textquotedblright} texture is of two inverted pyramids of similar sizes laid out in alternating order. The {\textquotedblleft}patch{\textquotedblright} texture uses a checkerboard layout of blocks of parallel grooves, with the grooves of alternating blocks perpendicularly oriented to each other. We estimate that these textures, which almost fully trap light for the first six passes through the substrate, can deliver better optical performance than the standard inverted pyramid texture, especially in narrow-band applications.}, issn = {09270248}, doi = {10.1016/S0927-0248(00)00115-X}, author = {Campbell, Patrick and Martin A Green} } @article {Altermatt2001, title = {Improvements in numerical modelling of highly injected crystalline silicon solar cells}, journal = {Solar Energy Materials and Solar Cells}, volume = {65}, year = {2001}, pages = {149-155(7)}, abstract = {

We numerically model crystalline silicon concentrator cells with the inclusion of band gap narrowing (BGN) caused by injected free carriers. In previous studies, the revised room-temperature value of the intrinsic carrier density, ni=1.00x1010cm-3, was inconsistent with the other material parameters of highly injected silicon. In this paper, we show that high-injection experiments can be described consistently with the revised value of ni if free-carrier induced BGN is included, and that such BGN is an important effect in silicon concentrator cells. The new model presented here significantly improves the ability to model highly injected silicon cells with a high level of precision.

}, url = {http://www.ingentaconnect.com/content/els/09270248/2001/00000065/00000001/art00089" doi = "doi:10.1016/S0927-0248(00)00089-1}, author = {Pietro P Altermatt and Sinton, R.A. and G. Heiser} } @proceedings {Keogh2001, title = {Natural Sunlight Calibration of Silicon Solar Cells.}, year = {2001}, note = {
}, address = {Munich, Germany}, author = {W. Keogh and Andrew W Blakers} } @proceedings {Honsberg2001, title = {A New Generalized Detailed Balance Formulation to Calculate Solar Cell Efficiency Limits}, year = {2001}, note = {
}, pages = {22-26}, author = {Christiana B Honsberg and R. Corkish and S. P. Bremner} } @conference {Bowden2001, title = {Rapid and Accurate Determination of Series Resistance and Fill Factor Losses in Industrial Silicon Solar Cells}, booktitle = {17th European Photovoltaic Solar Energy Conference}, year = {2001}, month = {22/10/2001}, address = {Munich, Germany}, author = {S. Bowden and A. Rohatgi} } @article {Macdonald2001, title = {On the use of a bias-light correction for trapping effects in photoconductance-based lifetime measurements of silicon}, journal = {Journal of Applied Physics}, volume = {89}, number = {5}, year = {2001}, pages = {2772-2778}, publisher = {AIP}, keywords = {CARRIER DENSITY, carrier lifetime, electron traps, electron-hole recombination, elemental semiconductors, hole traps, photoconductivity, SILICON, solar cells}, doi = {10.1063/1.1346652}, url = {http://link.aip.org/link/?JAP/89/2772/1}, author = {Daniel Macdonald and Ronald A. Sinton and Andr{\'e}s Cuevas} } @mastersthesis {Anwar2000, title = {Aluminium Back Surface Field in Buried Contact Solar Cells}, volume = {Bachelor of Engineering}, year = {2000}, note = {
}, school = {University of New South Wales}, type = {masters}, author = {Anwar, K.K.} } @article {Schmidt2000, title = {Coulomb-enhanced Auger recombination in crystalline silicon at intermediate and high injection densities}, journal = {Journal of Applied Physics}, volume = {88}, number = {3}, year = {2000}, pages = {1494-1497}, publisher = {AIP}, keywords = {Auger effect, carrier lifetime, electron-hole recombination, elemental semiconductors, photoconductivity, SILICON}, doi = {10.1063/1.373878}, url = {http://link.aip.org/link/?JAP/88/1494/1}, author = {Jan Schmidt and Mark J Kerr and Pietro P Altermatt} } @proceedings {McIntosh2000, title = {The Influence of Edge Recombination on a Solar Cell{\textquoteright}s IV Curve}, year = {2000}, note = {
}, author = {McIntosh, K. R. and Christiana B Honsberg} } @proceedings {vanderHeide2000, title = {Mapping of contact resistance and locating shunts on solar cells using Resistance Analysis by Mapping of Potential (RAMP) techniques}, year = {2000}, note = {
}, pages = {1438}, address = {Glasgow (United Kingdom)}, author = {A.S.H. van der Heide and et al} } @proceedings {ONeil2000, title = {Outdoor measurement of 28\% efficiency for a mini-concentrator module}, year = {2000}, note = {
}, address = {Denver, USA}, author = {O{\textquoteright}Neil, M.J. and McDanal, A.J.} } @article {Yoon2000, title = {Photoelectrochemical properties of copper oxide thin films coated on an n-Si substrate}, journal = {Thin Solid Films}, volume = {372}, year = {2000}, pages = {250 - 256}, abstract = {The photoelectrochemical properties of the copper oxide thin film coated on the n-type silicon electrode were investigated as a function of film deposition temperature. The variation in the deposition temperature affected the film morphology and the ratio of copper to oxygen. In case of the films deposited below 200{\textdegree}C, the main phase was found to be CuO while the amount of the Cu2O phase increased with further increases in deposition temperature. The n-silicon photoelectrode showed enhanced photocurrent{\textendash}potential (I{\textendash}V) properties by forming a copper oxide/n-silicon heterojunction. In particular, the electrode, which mainly consisted of a CuO phase, showed better photoelectrochemical conversion efficiencies compared to the Cu2O phase. This result was explained in terms of the electrical conductance and transmittance of the copper oxide film.}, keywords = {XPS}, issn = {0040-6090}, doi = {http://dx.doi.org/10.1016/S0040-6090(00)01058-0}, url = {http://www.sciencedirect.com/science/article/pii/S0040609000010580}, author = {Ki Hyun Yoon and Woo Jin Choi and Dong Heon Kang} } @conference {Sinton2000, title = {A Quasi-Steady-State Open-Circuit Voltage Method for Solar Cell Characterization}, booktitle = {16th European Photovoltaic Solar Energy Conference}, year = {2000}, month = {05/2000}, pages = {1152{\textendash}1155}, address = {Glasgow, Scotland}, author = {Sinton, R.A. and Andr{\'e}s Cuevas} } @proceedings {Corkish2000, title = {Simulating Electron-Beam-Induced Current Profiles Across p-n Junctions}, year = {2000}, note = {
}, pages = {1590-1593}, author = {R. Corkish and Luke, K. L. and Pietro P Altermatt and G. Heiser} } @conference {Corkish2000, title = {Simulating Electron-Beam-Induced Current Profiles Across p-n Junctions}, booktitle = {Proceedings of the 16h European Solar Energy Conference}, year = {2000}, note = {
}, month = {1-5 May 2000}, pages = {1590-1593}, publisher = {James and James}, organization = {James and James}, address = {Glasgow UK}, isbn = {9781902916187}, author = {R. Corkish and Luke, K. L. and Pietro P Altermatt and G. Heiser} } @article {Markvart2000, title = {Solar Electricity}, year = {2000}, note = {

1. Electricity from the Sun

2. Solar Radiation

3. Solar Cells

4. Photovoltaic System Engineering

5. Applications

6. Environmental Impacts of Photovoltaics

7. Advanced and Special Topics

Index

}, pages = {271}, publisher = {John Wiley \& Sons}, edition = {Second Edition}, address = {Chichester, England}, isbn = {0-471-98853-7}, url = {http://www.amazon.com/Solar-Electricity-2nd-Tomas-Markvart/dp/0471988537/ref=sr_1_1?s=books\&ie=UTF8\&qid=1279647029\&sr=1-1}, author = {Tomas Markvart} } @book {Streetman2001, title = {Solid State Electronic Devices}, year = {2000}, note = {
}, publisher = {Prentice Hall}, organization = {Prentice Hall}, author = {Ben G. Streetman} } @article {rumberg2000, title = {ZnSe thin films grown by chemical vapour deposition for application as buffer layer in CIGSS solar cells}, journal = {Thin Solid Films}, volume = {361-362}, year = {2000}, month = {Jan-02-2000}, pages = {172 - 176}, issn = {00406090}, doi = {10.1016/S0040-6090(99)00790-7}, url = {http://linkinghub.elsevier.com/retrieve/pii/S0040609099007907http://api.elsevier.com/content/article/PII:S0040609099007907?httpAccept=text/xmlhttp://api.elsevier.com/content/article/PII:S0040609099007907?httpAccept=text/plain}, author = {Rumberg, A. and Sommerhalter, Ch. and Toplak, M. and J{\"a}ger-Waldau, A. and Lux-Steiner, M.Ch.} } @article {wei1999effects, title = {Effects of Na on the electrical and structural properties of CuInSe2}, journal = {Journal of Applied Physics}, volume = {85}, year = {1999}, pages = {7214{\textendash}7218}, author = {Wei, Su-Huai and Zhang, SB and Zunger, Alex} } @article {Nagel1999, title = {Generalized analysis of quasi-steady-state and quasi-transient measurements of carrier lifetimes in semiconductors}, journal = {Journal of Applied Physics}, volume = {86}, number = {11}, year = {1999}, pages = {6218-6221}, publisher = {AIP}, keywords = {carrier lifetime, photoconductivity}, doi = {10.1063/1.371633}, url = {http://link.aip.org/link/?JAP/86/6218/1}, author = {Henning Nagel and Christopher Berge and Armin G Aberle} } @article {rockett1999incorporation, title = {Na incorporation in Mo and CuInSe2 from production processes}, journal = {Solar energy materials and solar cells}, volume = {59}, year = {1999}, pages = {255{\textendash}264}, author = {Rockett, Angus and Granath, Karin and Asher, S and Al Jassim, MM and Hasoon, F and Matson, R and Basol, B and Kapur, V and Britt, JS and Gillespie, T and others} } @article {thomas1999, title = {Photoeffects in cobalt doped pyrite (FeS 2 ) films}, journal = {Solid State Communications}, volume = {111}, year = {1999}, month = {Jan-07-1999}, pages = {235 - 240}, issn = {00381098}, doi = {10.1016/S0038-1098(99)00213-6}, url = {http://linkinghub.elsevier.com/retrieve/pii/S0038109899002136http://api.elsevier.com/content/article/PII:S0038109899002136?httpAccept=text/plainhttp://api.elsevier.com/content/article/PII:S0038109899002136?httpAccept=text/xml}, author = {Thomas, B. and Ellmer, K. and Bohne, W. and R{\"o}hrich, J. and Kunst, M. and Tributsch, H.} } @article {Mane1999, title = {Photoelectrochemical cells based on chemically deposited nanocrystalline Bi2S3 thin films}, journal = {Materials Chemistry and Physics}, volume = {60}, year = {1999}, month = {Jan-08-1999}, pages = {196 - 203}, issn = {02540584}, doi = {10.1016/S0254-0584(99)00085-1}, url = {http://linkinghub.elsevier.com/retrieve/pii/S0254058499000851}, author = {Mane, R.S. and Sankapal, B.R. and Lokhande, C.D.} } @proceedings {Zhao1998, title = {19.8\% Efficient Multicrystalline Silicon Solar Cells with Honeycomb Textured Front Surface}, year = {1998}, note = {
}, address = {Vienna, Austria}, author = {Zhao, J. and Wang, A. and Martin A Green} } @article {Zhao1991, title = {19.8\% efficient \"honeycomb\" textured multicrystalline and 24.4\% monocrystalline silicon solar cells}, journal = {Applied Physics Letters}, volume = {73}, number = {14}, year = {1998}, pages = {1991-1993}, publisher = {AIP}, keywords = {elemental semiconductors, SILICON, solar cells, surface texture}, doi = {10.1063/1.122345}, url = {http://link.aip.org/link/?APL/73/1991/1}, author = {Jianhua Zhao and Aihua Wang and Martin A Green and Francesca Ferrazza} } @article {Maruyama1998, title = {Copper oxide thin films prepared by chemical vapor deposition from copper dipivaloylmethanate}, journal = {Solar Energy Materials and Solar Cells}, volume = {56}, year = {1998}, month = {Jan-09-1998}, pages = {85 - 92}, issn = {09270248}, doi = {10.1016/S0927-0248(98)00128-7}, url = {http://linkinghub.elsevier.com/retrieve/pii/S0927024898001287}, author = {Maruyama, Toshiro} } @proceedings {Ruby1998, title = {Improved Performance of Self-Aligned, Selective-Emitter Silicon Solar Cells}, year = {1998}, note = {
}, month = {07/1998}, address = {Vienna, Austria}, author = {Ruby, D. S. and Yang, P. and Zaidi, S. and Brueck, S. and Roy, M. and Narayanan, S.} } @article {Lokhande1998, title = {Process and characterisation of chemical bath deposited manganese sulphide (MnS) thin films}, journal = {Thin Solid Films}, volume = {330}, year = {1998}, month = {Jan-09-1998}, pages = {70 - 75}, issn = {00406090}, doi = {10.1016/S0040-6090(98)00500-8}, url = {http://linkinghub.elsevier.com/retrieve/pii/S0040609098005008}, author = {Lokhande, C.D. and Ennaoui, A. and Patil, P.S. and Giersig, M. and Muller, M. and Diesner, K. and Tributsch, H.} } @article {Zhao1997, title = {20,000 PERL silicon cells for the "1996 World Solar Challenge" solar car race}, journal = {Progress in Photovoltaics: Research and Applications}, volume = {5}, year = {1997}, note = {
}, pages = {269{\textendash}276}, author = {Zhao, J. and Wang, A. and Yun, F. and Zhang, G. and Roche, D.M. and Wenham, S.R. and Martin A Green} } @conference {friedlmeier1997heterojunctions, title = {Heterojunctions based on Cu2ZnSnS4 and Cu2ZnSnSe4 thin films}, booktitle = {14th European PVSEC}, year = {1997}, author = {Friedlmeier, Th Magorian and Wieser, N and Walter, Th and Dittrich, H and Schock, HW} } @proceedings {Einhaus1997, title = {Isotropic texturing of multicrystalline silicon wafers with acidic texturing solutions}, year = {1997}, note = {
}, pages = {167-170, 1451}, address = {New York, NY, USA}, author = {Einhaus, R. and Vazsonyi, E. and Szlufcik, J. and Nijs, J. and Mertens, R.} } @proceedings {Szlufcik1997, title = {Low-cost industrial technologies of crystalline silicon solar cells}, volume = {85}, year = {1997}, note = {
}, pages = {711-730}, author = {Szlufcik, J. and Sivoththaman, S. and Nlis, J.F. and Mertens, R.P. and Van-Overstraeten, R.} } @article {Katagiri1997, title = {Preparation and evaluation of Cu2ZnSnS4 thin films by sulfurization of E-B evaporated precursors}, journal = {Solar Energy Materials and Solar Cells}, volume = {49}, year = {1997}, pages = {407 - 414}, abstract = {By sulfurization of EB evaporated precursors, CZTS(Cu2ZnSnS4) films could be prepared successfully. This semiconductor does not consist of any rare-metal such as In. The X-ray diffraction pattern of CZTS thin films showed that these films had a stannite structure. This study estimated the optical band gap energy as 1.45 eV. The optical absorption coefficient was in the order of 104cm-1. The resistivity was in the the order of 104 Ω cm and the conduction type was p-type. Fabricated solar cells, Al/ZnO/CdS/CZTS/Mo/Soda Lime Glass, showed an open-circuit voltage up to 400 mV.}, keywords = {EB evaporated precursors}, issn = {0927-0248}, doi = {http://dx.doi.org/10.1016/S0927-0248(97)00119-0}, url = {http://www.sciencedirect.com/science/article/pii/S0927024897001190}, author = {Hironori Katagiri and Nobuyuki Sasaguchi and Shima Hando and Suguro Hoshino and Jiro Ohashi and Takaharu Yokota} } @article {Chandramohan1997, title = {Preparation of Zinc Selenide Thin Films by Electrodeposition Technique for Solar Cell Applications}, journal = {physica status solidi (a)}, volume = {163}, year = {1997}, month = {Jan-10-1997}, pages = {R11 - R12}, issn = {00318965}, doi = {10.1002/(ISSN)1521-396X10.1002/1521-396X(199710)163:2<>1.0.CO;2-U10.1002/1521-396X(199710)163:23.0.CO;2-3}, author = {Chandramohan, R. and Sanjeeviraja, C. and Mahalingam, T.} } @article {Hezel1997, title = {Recent progress in MIS solar cells}, journal = {Progress in Photovoltaics: Research and Applications}, volume = {5}, year = {1997}, note = {
}, pages = {109-120}, author = {Hezel, R.} } @proceedings {Horzel1997, title = {A simple processing sequence for selective emitters}, year = {1997}, note = {
}, pages = {139-142}, address = {New York, NY, USA}, author = {Horzel, J. and Szlufcik, J. and Nijs, J. and Mertens, R.} } @proceedings {Fukui1997, title = {Surface texturing using reactive ion etching for multicrystalline silicon solar cells}, year = {1997}, note = {
}, pages = {1451, 47-50}, address = {New York, NY, USA}, author = {Fukui, K. and Inomata, Y. and Shirasawa, K.} } @article {Sinton1996, title = {Contactless determination of current{\textendash}voltage characteristics and minority-carrier lifetimes in semiconductors from quasi-steady-state photoconductance data}, journal = {Applied Physics Letters}, volume = {69}, number = {17}, year = {1996}, pages = {2510-2512}, publisher = {AIP}, keywords = {carrier lifetime, CV CHARACTERISTIC, MINORITY CARRIERS, photoconductivity, SEMICONDUCTOR MATERIALS, SILICON, STEADY {\textendash} STATE CONDITIONS}, doi = {10.1063/1.117723}, url = {http://link.aip.org/link/?APL/69/2510/1}, author = {Ronald A. Sinton and Andr{\'e}s Cuevas} } @article {Stocks1996, title = {Texturing of polycrystalline silicon}, journal = {Solar Energy Materials and Solar Cells}, volume = {40}, number = {1}, year = {1996}, pages = {33 - 42}, issn = {0927-0248}, doi = {DOI: 10.1016/0927-0248(95)00077-1}, url = {http://www.sciencedirect.com/science/article/B6V51-3VTFK7T-57/2/eb36bb8dfafef0de9e83d2f685caf541}, author = {M. J. Stocks and A. J. Carr and Andrew W Blakers} } @article {Desai1995, title = {Chemical deposition of Bi2S3 thin films from thioacetamide bath}, journal = {Materials Chemistry and Physics}, volume = {41}, year = {1995}, month = {Jan-07-1995}, pages = {98 - 103}, issn = {02540584}, doi = {10.1016/0254-0584(95)01538-8}, url = {http://linkinghub.elsevier.com/retrieve/pii/0254058495015388}, author = {Desai, J.D. and Lokhande, C.D.} } @article {Green1995, title = {Optical properties of intrinsic silicon at 300 K}, journal = {Progress in Photovoltaics: Research and Applications}, volume = {3}, year = {1995}, note = {
}, month = {1995}, pages = {189 - 192}, issn = {1099159X}, doi = {10.1002/pip.4670030303}, author = {Martin A Green and Keevers, Mark J.} } @book {gueymard1995, title = {SMARTS2: a simple model of the atmospheric radiative transfer of sunshine: algorithms and performance assessment}, year = {1995}, publisher = {Florida Solar Energy Center Cocoa, FL}, organization = {Florida Solar Energy Center Cocoa, FL}, author = {Gueymard, Christian} } @article {Baruch1995, title = {On some thermodynamic aspects of photovoltaic solar energy conversion}, journal = {Solar Energy Materials and Solar Cells}, volume = {36}, year = {1995}, pages = {201-222}, author = {Baruch, P. and De Vos, A. and Landsberg, P. T. and J.E. Parrott} } @article {Kerr1995, title = {Sun{\textquoteright}s Role in Warming Is Discounted}, journal = {Science}, volume = {268}, year = {1995}, note = {
}, month = {04/1995}, pages = {28 - 29}, issn = {1095-9203}, doi = {10.1126/science.268.5207.28}, author = {Kerr, R. A.} } @article {Verlinden1994, title = {7000 High Efficiency Cells for a Dream}, journal = {Progress in Photovoltaics: Research and Applications}, volume = {2}, year = {1994}, note = {
}, pages = {143 - 152}, author = {Verlinden, P.J. and Richard M Swanson and Crane, R.A.} } @article {Durand1994, title = {Attaining Thirty-Year Photovoltaic System Lifetime}, journal = {Progress in Photovoltaics: Research and Applications}, year = {1994}, note = {
}, author = {Durand, S.} } @article {Jordan1994, title = {Buried contact concentrator solar cells}, journal = {Progress in Photovoltaics: Research and Applications}, volume = {2}, year = {1994}, note = {
}, pages = {171-176}, author = {Jordan, D. and Nagle, J.P.} } @article {Lew1994, title = {CVD routes to titanium disulfide films}, journal = {Advanced Materials}, volume = {6}, year = {1994}, month = {Jan-03-1994}, pages = {237 - 239}, issn = {0935-9648}, doi = {10.1002/(ISSN)1521-409510.1002/adma.v6:310.1002/adma.19940060313}, url = {http://doi.wiley.com/10.1002/adma.19940060313}, author = {Lewkebandara, T.S. and Winter, Charles H.} } @article {Basore1994, title = {Defining terms for crystalline silicon solar cells}, journal = {Progress in Photovoltaics: Research and Applications}, volume = {2}, year = {1994}, note = {
}, pages = {177-179}, author = {Basore, P.A.} } @article {Robinson1994, title = {Departures from the principle of superposition in silicon solar cells}, journal = {Journal of Applied Physics}, volume = {76}, year = {1994}, note = {
}, month = {1994}, pages = {7920}, issn = {00218979}, doi = {10.1063/1.357902}, author = {Robinson, S. J. and Armin G Aberle and Martin A Green} } @article {Sproul1994, title = {Dimensionless solution of the equation describing the effect of surface recombination on carrier decay in semiconductors}, journal = {Journal of Applied Physics}, volume = {76}, number = {5}, year = {1994}, pages = {2851-2854}, publisher = {AIP}, keywords = {ANALYTICAL SOLUTION, carrier lifetime, DECAY, MINORITY CARRIERS, RECOMBINATION, SEMICONDUCTOR MATERIALS, SURFACES}, doi = {10.1063/1.357521}, url = {http://link.aip.org/link/?JAP/76/2851/1}, author = {A. B. Sproul} } @conference {Pu1994, title = {Investigation on SnS film by RF sputtering for photovoltaic application}, booktitle = {1994 IEEE 1st World Conference on Photovoltaic Energy Conversion - WCPEC (A Joint Conference of PVSC, PVSEC and PSEC)Proceedings of 1994 IEEE 1st World Conference on Photovoltaic Energy Conversion - WCPEC (A Joint Conference of PVSC, PVSEC and PSEC)}, year = {1994}, publisher = {IEEE}, organization = {IEEE}, address = {Waikoloa, HI, USA}, doi = {10.1109/WCPEC.1994.519977}, url = {http://ieeexplore.ieee.org/lpdocs/epic03/wrapper.htm?arnumber=519977}, author = {Wei Guang-Pu and Zhang Zhi-Lin and Zhao Wei-Ming and Gao Xiang-Hong and Chen Wei-Qun and Tanamura, H. and Yamaguchi, M. and Noguchi, H. and Nagatomo, T. and Omoto, O.} } @article {heras1994, title = {Temperature dependence of the optical absorption edge of pyrite FeS 2 thin films}, journal = {Journal of Physics: Condensed Matter}, volume = {6}, year = {1994}, month = {Feb-11-1995}, pages = {10177 - 10183}, issn = {0953-8984}, doi = {10.1088/0953-8984/6/46/033}, url = {http://stacks.iop.org/0953-8984/6/i=46/a=033?key=crossref.61b976ff921e0c9e9564b77a55dabd35}, author = {Heras, C de las and Ferrer, I J and Sanchez, C} } @book {Ghandi1994, title = {{VLSI} Fabrication Principles: Silicon and Gallium Arsenide, 2nd Edition}, year = {1994}, publisher = {Wiley-Interscience}, organization = {Wiley-Interscience}, edition = {2}, isbn = {0471580058}, author = {Ghandhi, Sorab K.} } @article {Misiakos93, title = {Accurate measurements of the silicon intrinsic carrier density from 78 to 340 K}, journal = {Journal of Applied Physics}, volume = {74}, year = {1993}, month = {Jan-01-1993}, pages = {3293}, abstract = {The intrinsic carrier density in silicon has been measured by a novel technique based on low-frequency capacitance measurements of a p+-i-n+ diode biased in high injection. The major advantage of the method is its insensitivity to uncertainties regarding the exact values of the carrier mobilities, the recombination parameters, and the doping density. The intrinsic carrier density was measured in the temperature range from 78 to 340 K. At 300 K the value of ni was found to be (9.7{\textpm}0.1){\texttimes}10^9 cm-3.}, issn = {00218979}, doi = {10.1063/1.354551}, author = {Misiakos, Konstantinos and Tsamakis, Dimitris} } @article {Parrott1993, title = {Choice of an equivalent black body solar temperature}, journal = {Solar Energy}, volume = {51}, number = {3}, year = {1993}, note = {
}, month = {09/1993}, pages = {195 - 195}, issn = {0038-092X}, doi = {DOI: 10.1016/0038-092X(93)90096-7}, url = {http://www.sciencedirect.com/science/article/B6V50-497TD5S-1HX/2/5b4be52ce15a1f2f2b664fe8bbb37cb6}, author = {J.E. Parrott} } @article {Xu1993, title = {Electronic, optical, and structural properties of some wurtzite crystals}, journal = {Physical Review B}, volume = {48}, year = {1993}, month = {Jan-08-1993}, pages = {4335 - 4351}, issn = {0163-1829}, doi = {10.1103/PhysRevB.48.4335}, url = {http://link.aps.org/doi/10.1103/PhysRevB.48.4335}, author = {Xu, Yong-Nian and Ching, W.} } @conference {Aberle1993, title = {A New Method for the Accurate Measurements of the Lumped Series Resistance of Solar Cells}, booktitle = {Proceedings of the 23rd IEEE Photovoltaic Specialists Conference}, year = {1993}, address = {Louisville, KY}, author = {Armin G Aberle and Wenham, S.R. and Martin A Green} } @article {Nair1993, title = {Structure and Composition of Chemically Deposited Thin Films of Bismuth Sulfide and Copper Sulfide Effect on Optical and Electrical Properties}, journal = {Journal of The Electrochemical Society}, volume = {140}, year = {1993}, pages = {754{\textendash}759}, abstract = {Chemically deposited thin films of bismuth sulfide (0.13 μm) and copper sulfide (0.3 μm) and copper sulfide films deposited on bismuth sulfide have been studied so as to obtain information about their structure, composition, thermal stability, and their effect on the optical and electrical properties. The studies establish that bismuth sulfide thin films become crystalline upon air annealing near {200{\textdegree}C} and remain stable up to {300{\textdegree}C.} But oxygen chemisorption reduces the photo- and dark conductivities of the films annealed at {300{\textdegree}C.} The studies establish that the copper sulfide films are (covellite), which is stable up to {220{\textdegree}C.} However, films deposited on bismuth sulfide substrate films retain useful electrical and optical properties for annealing temperatures up to {\~{}300{\textdegree}C.}}, keywords = {annealing, bismuth compounds, copper compounds, optical properties, Thin films}, issn = {0013-4651, 1945-7111}, doi = {10.1149/1.2056153}, url = {http://jes.ecsdl.org/content/140/3/754}, author = {Nair, P. K. and Nair, M. T. S. and Pathirana, Hema M. K. K. and Zingaro, Ralph A. and Meyers, Edward A.} } @article {Knight2003, title = {The crystal structures of CuInSe2 and CuInTe2}, journal = {Materials Research Bulletin}, volume = {27}, year = {1992}, month = {Jan-02-1992}, pages = {161 - 167}, issn = {00255408}, doi = {10.1016/0025-5408(92)90209-I}, url = {http://linkinghub.elsevier.com/retrieve/pii/002554089290209Ihttp://api.elsevier.com/content/article/PII:002554089290209I?httpAccept=text/xmlhttp://api.elsevier.com/content/article/PII:002554089290209I?httpAccept=text/plain}, author = {Knight, K.S.} } @article {Rincon1992, title = {Lattice vibrations of CuInSe2 and CuGaSe2 by Raman microspectrometry}, journal = {Journal of Applied Physics}, volume = {72}, year = {1992}, abstract = {The vibrational spectra of the chalcopyrite compounds CuInSe2 and CuGaSe2 have been studied by Raman microspectrometry. This technique is very useful in the present case where large single crystals are not generally available. The results have been used to resolve discrepancies in the reported data on the vibrational spectrum of CuInSe2.}, doi = {http://scitation.aip.org/content/aip/journal/jap/72/9/10.1063/1.352195}, url = {4321-4324}, author = {Rinc{\'o}n, C. and Ram{\'\i}rez, F. J.} } @article {Willeke1992, title = {A simple and effective light trapping technique for polycrystalline silicon solar cells}, journal = {Solar Energy Materials and Solar Cells}, volume = {26}, number = {4}, year = {1992}, pages = {345 - 356}, issn = {0927-0248}, doi = {DOI: 10.1016/0927-0248(92)90054-S}, url = {http://www.sciencedirect.com/science/article/B6V51-47XG9S8-45/2/acfac830ed036bd52484e2951d6f9c51}, author = {G. Willeke and H. Nussbaumer and H. Bender and E. Bucher} } @book {Green1992, title = {Solar Cells - Operating Principles, Technology and System Application}, year = {1992}, note = {
}, publisher = {University of NSW}, organization = {University of NSW}, address = {Kensington, Australia}, author = {Martin A Green} } @proceedings {Wohlgemuth1991, title = {Buried contact concentrator solar cells}, volume = {1}, year = {1991}, note = {
}, pages = {273-277}, author = {Wohlgemuth, J.H. and Narayanan, S.} } @proceedings {Wenger1991, title = {Decline of the Carrisa Plains PV Power Plant: The Impact of Concentrating Sunlight on Flat Plates}, year = {1991}, note = {
}, pages = {586-592}, address = {Las Vegas, USA}, author = {Wenger, H.J. and Schaefer, J. and Rosenthal, A. and Hammond, B. and Schlueter, L.} } @article {Sproul1991, title = {Improved value for the silicon intrinsic carrier concentration from 275 to 375 K}, journal = {Journal of Applied Physics}, volume = {70}, number = {2}, year = {1991}, note = {
}, pages = {846-854}, publisher = {AIP}, keywords = {CARRIER DENSITY, IV CHARACTERISTIC, JUNCTION DIODES, MEDIUM TEMPERATURE, MINORITY CARRIERS, SANDIA LABORATORIES, SILICON, SILICON DIODES, TEMPERATURE DEPENDENCE}, doi = {10.1063/1.349645}, url = {http://link.aip.org/link/?JAP/70/846/1}, author = {A. B. Sproul and Martin A Green} } @article {Sproul1991, title = {Improved value for the silicon intrinsic carrier concentration from 275 to 375 K}, journal = {Journal of Applied Physics}, volume = {70}, year = {1991}, note = {
}, month = {1991}, pages = {846}, issn = {00218979}, doi = {10.1063/1.349645}, author = {A. B. Sproul and Martin A Green} } @proceedings {Zhao1991, title = {Improvements in Silicon Solar Cell Performance}, year = {1991}, note = {
}, pages = {399-402}, author = {Zhao, J. and Wang A. and Dai, X. and Martin A Green and Wenham, S.R.} } @article {adachi1991, title = {Optical properties of ZnSe}, journal = {Physical Review B}, volume = {43}, year = {1991}, month = {Jan-04-1991}, pages = {9569 - 9577}, issn = {0163-1829}, doi = {10.1103/PhysRevB.43.9569}, url = {https://link.aps.org/doi/10.1103/PhysRevB.43.9569http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.43.9569/fulltexthttp://link.aps.org/article/10.1103/PhysRevB.43.9569}, author = {Adachi, Sadao and Taguchi, Tsunemasa} } @book {Blakers1991, title = {The Role of Photovoltaics in Reducing Greenhouse Gas Emissions}, year = {1991}, note = {
}, publisher = {Australian Government Publishing Service}, organization = {Australian Government Publishing Service}, address = {Canberra}, author = {Andrew W Blakers and Martin A Green and T. Leo and H. Outhred and B. Robins} } @proceedings {King1991, title = {A Sensitivity Analysis of the Spectral Mismatch Correction Procedure Using Wavelength-Dependent Error Sources}, year = {1991}, note = {
}, author = {King, D. and Hansen, B.} } @proceedings {Narayanan1990, title = {18\% efficient polycrystalline silicon solar cells}, volume = {1}, year = {1990}, note = {
}, pages = {678-680}, author = {Narayanan, S. and Zolper, J. and Yun, F. and Wenham, S.R. and A. B. Sproul and Chong,C.M. and Martin A Green} } @article {Sproul1990, title = {Improved value for the silicon intrinsic carrier concentration at 300 K}, journal = {Applied Physics Letters}, volume = {57}, year = {1990}, note = {
}, month = {1990}, pages = {255}, issn = {00036951}, doi = {10.1063/1.103707}, author = {A. B. Sproul and Martin A Green and Zhao, J.} } @article {Wang1990, title = {Minority-carrier transport parameters in n-type silicon}, journal = {IEEE Transactions on Electron Devices}, volume = {37}, year = {1990}, note = {
}, pages = {1314 - 1322}, issn = {00189383}, doi = {10.1109/16.108194}, author = {Wang, C.H. and Misiakos, K. and Neugroschel, A.} } @article {Perez1990, title = {Modeling daylight availability and irradiance components from direct and global irradiance}, journal = {Solar Energy}, volume = {44}, number = {5}, year = {1990}, note = {
}, pages = {271 - 289}, issn = {0038-092X}, doi = {DOI: 10.1016/0038-092X(90)90055-H}, url = {http://www.sciencedirect.com/science/article/B6V50-497T9KG-S0/2/034fdf1417cea3a44d8509fe805f679e}, author = {Richard Perez and Pierre Ineichen and Robert Seals and Joseph Michalsky and Ronald Stewart} } @article {Perez1990, title = {Modeling daylight availability and irradiance components from direct and global irradiance}, journal = {Solar Energy}, volume = {44}, number = {5}, year = {1990}, note = {
}, pages = {271{\textendash}289}, abstract = {

This paper presents the latest versions of several models developed by the authors to predict short time-step solar energy and daylight availability quantities needed by energy system modelers or building designers. The modeled quantities are global, direct and diffuse daylight illuminance, diffuse irradiance and illuminance impinging on tilted surfaces of arbitrary orientation, sky zenith luminance and sky luminance angular distribution. All models are original except for the last one which is extrapolated from current standards. All models share a common operating structure and a common set of input data: Hourly (or higher frequency) direct (or diffuse) and global irradiance plus surface dew point temperature. Key experimental observations leading to model development are briefly reviewed. Comprehensive validation results are presented. Model accuracy, assessed in terms of root-mean-square and mean bias errors, is analyzed both as a function of insolation conditions and site climatic environment.

}, issn = {{0038-092X}}, doi = {10.1016/0038-092X(90)90055-H}, url = {http://www.sciencedirect.com/science/article/B6V50-497T9KG-S0/2/034fdf1417cea3a44d8509fe805f679e}, author = {Richard Perez and Pierre Ineichen and Robert Seals and Joseph Michalsky and Ronald Stewart} } @article {basore1990, title = {Numerical modeling of textured silicon solar cells using PC-1D}, journal = {Electron Devices, IEEE Transactions on}, volume = {37}, year = {1990}, month = {02/1990}, pages = {337 -343}, abstract = {PC-1D is a quasi-one-dimensional finite-element program for modeling semiconductor devices on personal computers. The program offers solar cell researchers a convenient user interface with the ability to address complex issues associated with heavy doping, high-level injection, nonplanar structures, and transients. The physical and numerical models used in PC-1D Version 2 that make it possible to approximate the multidimensional effects found in textured crystalline silicon solar cells, including the effects of increased front-surface recombination, oblique photon path angles, and light trapping, are presented. As an example of how the model can be applied, PC-1D is used to investigate the interpretation of spectral quantum efficiency data as a tool for diagnosing the internal performance of textured silicon solar cells}, keywords = {elemental semiconductors, finite element analysis, finite-element program, front-surface recombination, heavy doping, high-level injection, internal performance, light trapping, microcomputer applications, modeling semiconductor devices, multidimensional effects, nonplanar structures, numerical models, oblique photon path angles, PC-1D, PC-1D Version 2, personal computers, semiconductor device models, semiconductors, Si, SILICON, solar cells, spectral quantum efficiency data, textured solar cells, transients}, issn = {0018-9383}, doi = {10.1109/16.46362}, author = {Basore, P.A.} } @proceedings {Green1990, title = {Photovoltaics: Coming of Age}, year = {1990}, note = {
}, month = {05/1990}, pages = {1-8}, address = {Orlando, USA}, abstract = {The history of photovoltaic development is reviewed. An outline of the potential of the technology as the author views it is given. The challenge to be met to reach this potential is to develop high-efficiency technologies which can be produced at low cost. Three factors suggest this is possible. The first is the latent efficiency still to be recovered with even the most highly developed cell technologies. The second is the recent progress with tandem cells, which suggests that most of the 30-40\% efficiency advantage over single-junction devices will eventually be realized. Tandem cells are likely to offer cost advantages in very high volume production. The third is the pyramid of possibilities, the wide range of semiconductors which still have to be evaluated for their photovoltaic potential.}, doi = {10.1109/PVSC.1990.111582}, url = {http://ieeexplore.ieee.org/lpdocs/epic03/wrapper.htm?arnumber=111582}, author = {Martin A Green} } @article {Zolper1989, title = {16.7\% efficient, laser textured, buried contact polycrystalline silicon solar cell}, journal = {Applied Physics Letters}, volume = {55}, number = {22}, year = {1989}, pages = {2363}, issn = {00036951}, doi = {10.1063/1.102019}, url = {http://apl.aip.org/applab/v55/i22/p2363_s1}, author = {John C. Zolper and Srinivasamohan Narayanan and Stuart R. Wenham and Martin A Green} } @article {Kasten89, title = {Revised optical air mass tables and approximation formula}, journal = {Applied Optics}, volume = {28}, number = {22}, year = {1989}, note = {
}, month = {11/1989}, pages = {4735{\textendash}4738}, publisher = {OSA}, doi = {10.1364/AO.28.004735}, url = {http://ao.osa.org/abstract.cfm?URI=ao-28-22-4735}, author = {Fritz Kasten and Andrew T. Young} } @booklet {Wenham1988, title = {Buried contact solar cell}, number = {4726850}, year = {1988}, note = {
}, month = {February}, url = {http://www.freepatentsonline.com/4726850.html}, author = {Stuart R. Wenham and Martin A Green} } @article {ito1998, title = {Electrical and Optical Properties of Stannite-Type Quaternary Semiconductor Thin Films}, journal = {Japanese Journal of Applied Physics}, volume = {27}, year = {1988}, month = {Aug-11-1989}, pages = {2094 - 2097}, issn = {0021-4922}, doi = {10.1143/JJAP.27.2094}, url = {http://stacks.iop.org/1347-4065/27/2094}, author = {Ito, Kentaro and Nakazawa, Tatsuo} } @proceedings {Emery1988, title = {SOLAR SIMULATION - PROBLEMS AND SOLUTIONS}, year = {1988}, note = {
}, pages = {1087}, author = {Emery, K. and Myers, D. and Rummel, S.} } @article {Luke1987, title = {Analysis of the interaction of a laser pulse with a silicon wafer: Determination of bulk lifetime and surface recombination velocity}, journal = {Journal of Applied Physics}, volume = {61}, number = {6}, year = {1987}, pages = {2282-2293}, publisher = {AIP}, keywords = {carrier lifetime, LASERRADIATION HEATING, MINORITY CARRIERS, RECOMBINATION, SILICON, SILICON SOLAR CELLS, SURFACE PROPERTIES, THEORETICAL DATA, VELOCITY, WAFERS}, doi = {10.1063/1.337938}, url = {http://link.aip.org/link/?JAP/61/2282/1}, author = {Keung L. Luke and Li-Jen Cheng} } @article {Campbell1987, title = {Light trapping properties of pyramidally textured surfaces}, journal = {Journal of Applied Physics}, volume = {62}, year = {1987}, month = {Jan-01-1987}, pages = {243}, issn = {00218979}, doi = {10.1063/1.339189}, author = {Campbell, Patrick and Martin A Green} } @article {Sinton1987, title = {Recombination in highly injected silicon}, journal = {Electron Devices, IEEE Transactions on}, volume = {34}, number = {6}, year = {1987}, note = {
}, month = {jun}, pages = {1380 - 1389}, issn = {0018-9383}, author = {Sinton, R.A. and Richard M Swanson} } @article {Mialhe1986, title = {The diode quality factor of solar cells under illumination}, journal = {Journal of Physics D: Applied Physics}, volume = {19}, year = {1986}, month = {Feb-03-1987}, pages = {483 - 492}, abstract = {A review of the methods of determination of solar cell quality factors is discussed from a theoretical point of view; experimental results are compared. Temperature effects, light and bias dependencies of the parameters and the models are considered in order to specify the limits of application of each method. }, issn = {0022-3727}, doi = {10.1088/0022-3727/19/3/018}, url = {https://iopscience.iop.org/article/10.1088/0022-3727/19/3/018http://stacks.iop.org/0022-3727/19/i=3/a=018/pdf}, author = {Mialhe, P and Charles, J P and Khoury, A and Bordure, G} } @article {Ross1986, title = {Flat-Plate Solar Array Project Final Report}, year = {1986}, note = {
}, pages = {86-31}, publisher = {Jet Propulsion Laboratory}, author = {Ross, R.G. Jnr. and Smokler, M.I.} } @article {Bird1986, title = {Simple Solar Spectral Model for Direct and Diffuse Irradiance on Horizontal and Tilted Planes at the Earth{\textquoteright}s Surface for Cloudless Atmospheres}, journal = {Journal of Climate and Applied Meteorology}, volume = {25}, year = {1986}, month = {Jan-01-1986}, pages = {87 - 97}, issn = {0733-3021}, doi = {10.1175/1520-0450(1986)025<0087:SSSMFD>2.0.CO;2}, url = {http://journals.ametsoc.org/doi/abs/10.1175/1520-0450\%281986\%29025\%3C0087\%3ASSSMFD\%3E2.0.CO\%3B2}, author = {Bird, Richard E. and Riordan, Carol} } @article {Eades1985, title = {Calculation of surface generation and recombination velocities at the Si-SiO2 interface}, journal = {Journal of Applied Physics}, volume = {58}, year = {1985}, note = {
}, month = {1985}, pages = {4267}, issn = {00218979}, doi = {10.1063/1.335562}, author = {Eades, Wendell D. and Richard M Swanson} } @book {Sekuler1985, title = {Perception}, year = {1985}, note = {
}, publisher = {Alfred A. Knopf Inc}, organization = {Alfred A. Knopf Inc}, address = {New York}, author = {Sekuler, R. and Blake, R.} } @book {Feynman1985, title = {QED : The Strange Theory of Light and Matter}, series = {Princeton University Press, Princeton NJ}, year = {1985}, note = {
}, author = {Feynman, R. P.} } @article {560, title = {On the Effect of Impurities on the Photovoltaic Behavior of Solar-Grade Silicon}, journal = {Journal of The Electrochemical Society}, volume = {131}, year = {1984}, month = {Jan-01-1984}, pages = {2128}, abstract = {The electrical and photovoltaic properties of partially compensated p-type silicon samples have been investigated in order to understand the influence of the contemporaneous presence of donors and acceptors on the behavior of majority and minority carriers. It has been shown that the majority carrier properties are only slightly influenced by the presence of donors in p-type samples and that the minority carrier properties depend on the excess acceptor concentration up to an excess donor concentration close to Formula . A theoretical explanation of these features has been proposed, on the base of the Shockley-Read-Hall model of recombination at shallow traps and donor-acceptor pairs formation. }, issn = {00134651}, doi = {10.1149/1.2116033}, url = {http://jes.ecsdl.org/cgi/doi/10.1149/1.2116033}, author = {Pizzini, S. and Calligarich, C.} } @article {Tiedje1984, title = {Limiting Efficiency of Silicon Solar Cells}, journal = {IEEE TRANSACTIONS ON ELECTRON DEVICES}, volume = {ED-31}, year = {1984}, note = {
}, month = {05/1984}, author = {T. Tiedje and E Yablonovich and G.D. Cody and B.G. Brooks} } @book {seri1984, title = {Photovoltaics for Residential Applications}, year = {1984}, note = {
}, publisher = {Solar Energy Research Institute}, organization = {Solar Energy Research Institute}, address = {Golden, Colorado}, author = {SERI} } @article {Masetti1983, title = {Modeling of carrier mobility against carrier concentration in arsenic-, phosphorus-, and boron-doped silicon}, journal = {IEEE Transactions on Electron Devices}, volume = {ED-30}, number = {7}, year = {1983}, note = {

Copyright 1983, {IEE}

}, pages = {764{\textendash}9}, abstract = {

New carrier mobility data for both arsenic- and boron-doped silicon are presented in the high doping range. The data definitely show that the electron mobility in As-doped silicon is significantly lower than in P-doped silicon for carrier concentrations higher than 1019 cm-3. By integrating these data with those previously published, empirical relationships able to model the carrier mobility against carrier concentration in the whole experimental range examined to date (about eight decades in concentration) for As-, P-, and B-doped silicon are derived. Different parameters in the expression for the n-type dopants provide differentiation between the electron mobility in As- and P-doped silicon. Finally, it is shown that these new expressions, once implemented in the {SUPREM} {II} process simulator, lead to reduced errors in the simulation of the sheet resistance values

}, keywords = {arsenic, boron, CARRIER DENSITY, carrier mobility, digital simulation, elemental semiconductors, heavily doped semiconductors, phosphorus, SILICON}, issn = {0018-9383}, author = {G. Masetti and M. Severi and S. Solmi} } @article {Hu1983-2, title = {On Phosphorus Diffusion in Silicon}, journal = {On Phosphorus Diffusion in Silicon}, volume = {54}, year = {1983}, note = {
}, pages = {6912-6922}, author = {S.M. Hu and P. Fahey and P. Sutton} } @book {Hu1983, title = {Solar Cells: From Basic to Advanced Systems}, year = {1983}, note = {
}, publisher = {McGraw-Hill}, organization = {McGraw-Hill}, address = {New York}, author = {Hu, C and White, R.M.} } @inbook {Benjamin1983, title = {Voltaic Cell, Chapter XIV}, year = {1983}, note = {
}, publisher = {Wiley}, organization = {Wiley}, address = {New York}, author = {P. Benjamin} } @article {Green1982, title = {Accuracy of Analytical Expressions for Solar Cell Fill Factors}, journal = {Solar Cells}, volume = {7}, year = {1982}, note = {
}, pages = {337-340}, author = {Martin A Green} } @article {Yablonovich1982, title = {Intensity Enhancement in Textured Optical Sheets for Solar Cells}, journal = {IEEE Transactions on Electron Devices}, volume = {ED-29}, year = {1982}, note = {
}, pages = {300-305}, author = {E Yablonovich and G.D. Cody} } @article {Green1982book, title = {Solar Cells: Operating Principles, Technology and System Applications}, year = {1982}, note = {

1. Solar Cells and Sunlight

2. Review of Semiconductor Properties

3. Generation, Recombination and the Basic Equation of Device Physics

4. p-n Junction Diodes

5. Efficiency Limits, Losses and Measurement

6. Standard Silicon Solar Cell Technology

7. Improved Silicon Cell Technology

8. Design of Silicon Solar Cells

9. Other Device Structures

10. Other Semiconductor Materials

11.Concentrating Systems

12. Photovoltaic Systems: Components and Applications

13. Design of Stand-alone Systems

14. Residential and Centralised Photovoltaic Power Systems

Appendix A: Physical Constants

Appendix B: Selected Properties of Silicon

Appendix C: List of Symbols

}, pages = {274}, publisher = {Prentice-Hall}, abstract = {
}, isbn = {0-85823-580-3}, author = {Martin A Green} } @article {Zerubavel, title = {The Standardization of Time: A Sociohistorical Perspective}, journal = {American Journal of Sociology}, volume = {88}, year = {1982}, pages = {1-23}, abstract = {In order to clarify the fundamental distinction between the psychological and sociological perspectives on temporality, this paper explores the distinctly social process of establishing a standard time-reckoning framework. The paper examines the introduction of Greenwich Mean Time to Britain, the establishment of the American railway time-zone system, and the almost universal enforcement of the modern international standard-time zone system. The rise of standard time is viewed within the context of (a) the establishment of national and international communication networks following the introduction of railway transportation and telegraphic communication (which explains the need to synchronize different communities and countries with one another) and (b) the rise of rationalism (which is responsible for the dissociation of standard time from nature). The paper also examines the various grounds on which standard time has been opposed, as well as the relevance of the time-zone system to the development of modern Western "organic" ties of interdependence and complementary differentiation.}, doi = {10.1086/227631}, url = {https://doi.org/10.1086/227631}, author = {Zerubavel, Eviatar} } @booklet {Thurber1981, title = {The Relationship Between Resistivity and Dopant Density for Phosphorus- and Boron-Doped Silicon}, year = {1981}, note = {
}, publisher = {U.S. Department of Commerce National Bureau of Standards}, author = {W R Thurber and Mattis and Liu and Filliben} } @article {Green1981, title = {Solar cell fill factors: General graph and empirical expressions}, journal = {Solid-State Electronics}, volume = {24}, year = {1981}, note = {
}, pages = {788 - 789}, issn = {00381101}, doi = {10.1016/0038-1101(81)90062-9}, author = {Martin A Green} } @proceedings {Ross1980, title = {Flat-Plate Photovoltaic Array Design Optimization}, year = {1980}, note = {
}, pages = {1126-1132}, address = {San Diego, CA}, author = {Ross, R.G.} } @article {Thurber1980boron, title = {Resistivity-Dopant Density Relationship for Boron-Doped Silicon}, journal = {Journal of The Electrochemical Society}, volume = {127}, number = {10}, year = {1980}, note = {
}, pages = {2291-2294}, publisher = {ECS}, keywords = {boron, electrical resistivity, Hall effect, hole density, semiconductor doping, SILICON}, doi = {10.1149/1.2129394}, url = {http://link.aip.org/link/?JES/127/2291/1}, author = {W R Thurber and R. L. Mattis and Y. M. Liu and J. J. Filliben} } @article {Thurber1980phos, title = {Resistivity-Dopant Density Relationship for Phosphorus-Doped Silicon}, journal = {Journal of The Electrochemical Society}, volume = {127}, number = {8}, year = {1980}, pages = {1807-1812}, publisher = {ECS}, keywords = {density, electrical resistivity, electron mobility, Hall effect, neutron activation analysis, phosphorus, photometry, semiconductor doping, SILICON}, doi = {10.1149/1.2130006}, url = {http://link.aip.org/link/?JES/127/1807/1}, author = {W R Thurber and R. L. Mattis and Y. M. Liu and J. J. Filliben} } @inbook {Rai1980, title = {Solar Energy Utilisation}, year = {1980}, note = {
}, pages = {44}, publisher = {Khanna Publishers}, organization = {Khanna Publishers}, author = {G.D. Rai} } @article {Lindholm1979, title = {Application of the superposition principle to solar-cell analysis}, journal = {IEEE Transactions on Electron Devices}, volume = {26}, number = {3}, year = {1979}, pages = {165{\textendash}171}, abstract = {The principle of superposition is used to derive from fundamentals the widely used shifting approximation that the current-voltage characteristic of an illuminated solar cell is the dark current-voltage characteristic shifted by the short-circuit photocurrent. Thus the derivation requires the linearity of the boundary-value problems that underlie the electrical characteristics. This focus on linearity defines the conditions that must hold if the shifting approximation is to apply with good accuracy. In this regard, if considerable photocurrent and considerable dark thermal recombination current both occur within the junction space-charge region, then the shifting approximation is invalid. From a rigorous standpoint, it is invalid also if low-injection concentrations of holes and electrons are not maintained throughout the quasi-neutral regions. The presence of sizable series resistance also invalidates the shifting approximation. Methods of analysis are presented to treat these cases for which shifting is not strictly valid. These methods are based on an understanding of the physics of cell operation. This understanding is supported by laboratory experiments and by exact computer solution of the relevant boundary-value problems. For the case of high injection in the base region, the method of analysis employed accurately yields the dependence of the open-circuit voltage on the short-circuit current (or the illumination level).}, issn = {0018-9383}, author = {F.A. Lindholm and Fossum, J.G. and E.L. Burgess} } @article {Irie1979, title = {Electrical Properties of p- and n-Type CuInSe 2 Single Crystals}, journal = {Japanese Journal of Applied Physics}, volume = {18}, year = {1979}, month = {Jan-07-1979}, pages = {1303 - 1310}, issn = {0021-4922}, doi = {10.1143/JJAP.18.1303}, url = {http://jjap.jsap.jp/link?JJAP/18/1303/}, author = {Irie, Taizo and Endo, Saburo and Kimura, Shigeo} } @article {Logothetis1979, title = {Hall coefficient and reflectivity evidence that TiS 2 is a semiconductor}, journal = {Journal of Physics C: Solid State Physics}, volume = {12}, year = {1979}, pages = {L521}, abstract = {A series of measurements of the Hall coefficient, infrared reflectivity, thermoelectric power and electrical resistivity of Ti 1+x S 2 single crystals with various degrees of stoichiometry is described, where, for the first time, each measurement was made on the same crystal (or crystals from the same batch). None of these measurements taken alone can distinguish between the semimetallic or semiconducting models of TiS 2 . However, by making all four measurements on each sample, it has been possible to establish correlations between the results for different samples. It was found that the product of the Hall coefficient and the square of the plasma frequency is the same for all samples, a result that is consistent with a semiconductor model, but is inconsistent with a semimetal. Nevertheless the most stoichiometric samples remain metallic with electron concentrations of 2*10 20 cm -3 . It was also found that the resistivity data cannot be explained by carrier-carrier or optical phonon scattering. Therefore, both the source of the residual conduction electrons and the scattering mechanism in TiS 2 remain unknown.}, url = {http://stacks.iop.org/0022-3719/12/i=13/a=007}, author = {E M Logothetis and W J Kaiser and C A Kukkonen and S P Faile and R Colella and J Gambold} } @article {Logothetis1979a, title = {Hall coefficient and reflectivity evidence that TiS 2 is a semiconductor}, journal = {Journal of Physics C: Solid State Physics}, volume = {12}, year = {1979}, month = {Feb-07-1980}, pages = {L521 - L526}, issn = {0022-3719}, doi = {10.1088/0022-3719/12/13/007}, url = {http://stacks.iop.org/0022-3719/12/i=13/a=007?key=crossref.7b34e84721f0d96f60dce7c3e44ba4c7}, author = {Logothetis, E M and W J Kaiser and Kukkonen, C A and S P Faile and Colella, R and J Gambold} } @article {Mack1979, title = {Solar Power for Telecommunications}, journal = {The Telecommunication Journal of Australia}, volume = {29}, year = {1979}, note = {
}, pages = {20-44}, author = {Mack, M.} } @booklet {Bailey1979, title = {United States Patent: 4137123 - Texture etching of silicon: method}, year = {1979}, abstract = {

A surface etchant for silicon comprising an anisotropic etchant containing silicon is disclosed. The etchant provides a textured surface of randomly spaced and sized pyramids on a silicon surface. It is particularly useful in reducing the reflectivity of solar cell surfaces.

}, url = {http://patft.uspto.gov/netacgi/nph-Parser?Sect1=PTO2\&Sect2=HITOFF\&p=1\&u=\%2Fnetahtml\%2FPTO\%2Fsearch-bool.html\&r=32\&f=G\&l=50\&co1=AND\&d=PTXT\&s1=4,137,123\&OS=4,137,123\&RS=4,137,123}, author = {William L. Bailey and Michael G. Coleman and Cynthia B. Harris and Israel A. Lesk} } @article {Heikens1978, title = {Electrical properties of α-MnS}, journal = {Journal of Physics and Chemistry of Solids}, volume = {39}, year = {1978}, month = {Jan-01-1978}, pages = {833 - 840}, abstract = {Electrical data including thermoelectric power, Hall effect and resistivity on iodine-grown crystals of p-type α-MnS are reported. A study of the temperature dependences reveals that the conductivity occurs by holes in a 3d-band (Mn3+) and that the mobility of the holes is not thermally activated. Photoelectron spectra confirm the 3d character of the top of the valence band. Accurate analysis of the electrical data gives a satisfactory explanation of the extrinsic and intrinsic behaviour; the simultaneous presence of donors (substitutional iodine) and acceptors (manganese vacancies) is responsible for the observed phenomena.}, issn = {00223697}, doi = {10.1016/0022-3697(78)90141-5}, url = {http://linkinghub.elsevier.com/retrieve/pii/0022369778901415}, author = {Heikens, H.H. and Van Bruggen, C.F. and Haas, C.} } @proceedings {Serreze1978, title = {Optimizing Solar Cell Performance by Simultaneous Consideration of Grid Pattern Design and Interconnect Configurations}, year = {1978}, note = {
}, pages = {1-8}, address = {Washington, D.C., USA}, author = {H.B. Serreze} } @article {Card1977, title = {Electronic processes at grain boundaries in polycrystalline semiconductors under optical illumination}, journal = {IEEE Transactions on Electron Devices}, volume = {ED-24}, year = {1977}, note = {
}, pages = {397-402}, author = {Card, H.C. and Yang, E.S.} } @article {Fossum1977, title = {Physical operation of back-surface-field silicon solar cells}, journal = {IEEE Transactions on Electron Devices}, volume = {24}, number = {4}, year = {1977}, month = {04/1977}, pages = {322 - 325}, abstract = {

Using exact numerical solutions of carrier transport in the back-surface-field silicon solar cell both for guidance and for verification, the physical mechanisms effective in this device are identified and explained. Concise analytical descriptions of the cell performance, based on the pertinent device physics, are formulated.

}, issn = {0018-9383}, author = {Fossum, J.G.} } @book {Meinel1976, title = {Applied Solar Energy}, year = {1976}, note = {
}, publisher = {Addison Wesley Publishing Co.}, organization = {Addison Wesley Publishing Co.}, author = {Meinel, A.B. and Meinel, M.P.} } @article {jones1976, title = {The electrical properties of zinc selenide}, journal = {Journal of Physics D: Applied Physics}, volume = {9}, year = {1976}, month = {Jan-04-1976}, pages = {799 - 810}, issn = {0022-3727}, doi = {10.1088/0022-3727/9/5/013}, url = {http://stacks.iop.org/0022-3727/9/i=5/a=013?key=crossref.d0fe6103237fcfbfd2221126652bc33b}, author = {Jones, G and Woods, J} } @proceedings {Wolf1976, title = {Historical Development of Solar Cells}, year = {1976}, note = {
}, publisher = {IEEE Press}, author = {M. Wolf} } @book {Backus1976, title = {Solar Cells}, year = {1976}, note = {
}, pages = {512}, publisher = {IEEE}, organization = {IEEE}, chapter = {3}, address = {New York}, abstract = {

The present volume constitutes a reference book containing classic papers in the field of solar cells as well as a relatively complete photovoltaic bibliography. The general subjects include the historical development of solar cells, solar-cell theory, cell fabrication, space systems, terrestrial applications, and working-group resumes and discussions. Individual papers deal with such topics as silicon p-n junction photocells, effects of temperature on photovoltaic solar-energy conversion, series resistance effects on solar-cell measurements, drift fields in photovoltaic solar-energy-converter cells, the violet cell, the photovoltaic effect in CdS, efficiency calculations of heterojunction solar-energy converters, CdTe solar cells and photovoltaic heterojunctions in II-VI compounds, the photovoltaic effect in GaAs p-n junctions, and the multiple-junction edge-illuminated solar cell. Other papers discuss silicon solar cell degradation in the space environment, direct solar-energy conversion for terrestrial use, single-crystal and polycrystalline silicon, and CdS/Cu2S thin-film cells

}, author = {C.E. Backus} } @article {VantHull1976, title = {Solar thermal power system based on optical transmission}, journal = {Solar Energy}, volume = {18}, number = {1}, year = {1976}, note = {
}, pages = {31 - 39}, issn = {0038-092X}, doi = {DOI: 10.1016/0038-092X(76)90033-5}, url = {http://www.sciencedirect.com/science/article/B6V50-497SCJS-2H/2/78dfffb8fca290387fb2596f89696498}, author = {L.L. Vant-Hull and A.F. Hildebrandt} } @article {Wald1975, title = {Bi2S3 as a high Z material for γ-ray detectors}, journal = {IEEE Transactions on Nuclear Science}, volume = {22}, year = {1975}, month = {Jan-02-1975}, pages = {246 - 250}, issn = {0018-9499}, doi = {10.1109/TNS.1975.4327646}, url = {http://ieeexplore.ieee.org/lpdocs/epic03/wrapper.htm?arnumber=4327646}, author = {Wald, F. V. and Bullitt, J. and Bell, R. O.} } @article {Whittingham1975, title = {Intercalation and lattice expansion in titanium disulfide}, journal = {The Journal of Chemical Physics}, volume = {62}, year = {1975}, month = {Jan-01-1975}, pages = {1588}, abstract = {The temperature coefficient of expansion has been measured for the a and c axes of titanium disulfide, and of its intercalates with a metal, lithium, and an organic base, s-collidine. The anisotropy in the expansion coefficients is related to the bonding in the structure.}, issn = {00219606}, doi = {10.1063/1.430581}, url = {http://link.aip.org/link/?JCP/62/1588/1\&Agg=doi}, author = {Stanley M Whittingham and Arthur H Thompson} } @article {wagner1974cuinse2, title = {CuInSe2/CdS heterojunction photovoltaic detectors}, journal = {Applied Physics Letters}, volume = {25}, year = {1974}, pages = {434{\textendash}435}, author = {Wagner, Sigurd and Shay, JL and Migliorato, P and Kasper, HM} } @article {Green1974, title = {Minority carrier MIS tunnel diodes and their application to electron- and photo-voltaic energy conversion{\textemdash}I. Theory}, journal = {Solid-State Electronics}, volume = {17}, year = {1974}, month = {Jan-06-1974}, pages = {551 - 561}, abstract = {If the insulating layer in a metal-insulator-semiconductor (MIS) diode is very thin (\<60 {\r A} for AlSiO2Si), measureable tunnel current can flow between the metal and the semiconductor. If the insulating layer is even thinner (\<30 {\r A}), tunnel currents are so large that they can significantly disturb the semiconductor from thermal equilibrium. Under such conditions, MIS diodes exhibit properties determined by which of the following tunneling processes is dominant; tunneling between the metal and the majority carrier energy band in the semiconductor, between the metal and the minority carrier energy band, or between the metal abd surface state levels. In the present paper, minority carrier MIS tunnel diodes are analysed using a very general formulation of the tunneling processes through the insulator, transport properties in the semiconductor, and surface state effects. Starting from solutions for diodes with relatively thick insulating layers where the semiconductor is essentially in thermal equilibrium, solutions are obtained for progressively thinner insulating layers until non-equilibrium effects in the semiconductor are observed. It is shown that such minority carrier MIS tunnel diodes with very thin insulating layers possess properties similar to p-n junction diodes including exponential current-voltage characteristics which approach the {\textquotedblleft}ideal diode{\textquotedblright} law of p-n junction theory. The theory adequately describes the observed properties of experimental devices reported in a companion paper. The diodes have application as injecting contacts, as photodiodes or elements of photodiode arrays, and as energy conversion devices employing the electron- or photo-voltaic effects.}, issn = {00381101}, doi = {10.1016/0038-1101(74)90172-5}, url = {http://linkinghub.elsevier.com/retrieve/pii/0038110174901725http://api.elsevier.com/content/article/PII:0038110174901725?httpAccept=text/xmlhttp://api.elsevier.com/content/article/PII:0038110174901725?httpAccept=text/plain}, author = {Green, M.A. and King, F.D. and Shewchun, J.} } @proceedings {Wang1973, title = {Optimum Design of Anti-reflection coating for silicon solar cells}, year = {1973}, note = {
}, pages = {168-171}, author = {E.Y. Wang and F.T.S. Yu and V.L. Sims and E.W. Brandhorst and J.D. Broder} } @article {merz1972, title = {Optical Properties of Substitutional Donors in ZnSe}, journal = {Physical Review B}, volume = {6}, year = {1972}, month = {Jan-07-1972}, pages = {545 - 556}, issn = {0556-2805}, doi = {10.1103/PhysRevB.6.545}, url = {https://link.aps.org/doi/10.1103/PhysRevB.6.545http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.6.545/fulltexthttp://link.aps.org/article/10.1103/PhysRevB.6.545}, author = {Merz, J. L. and Kukimoto, H. and Nassau, K. and Shiever, J. W.} } @article {531, title = {High Electron Mobility in Zinc Selenide Through Low-Temperature Annealing}, journal = {Journal of Applied Physics}, volume = {42}, year = {1971}, month = {Jan-01-1971}, pages = {1204}, abstract = {Electron mobility in ZnSe has been measured between 40{\textdegree} and 400{\textdegree}K. It is shown that through repeated annealing in liquid Zn the mobility maximum can be increased to 12 000 cm2/V sec. This is one of the highest mobilities measured for semiconductors with band gaps as wide as that of ZnSe (2.7 eV). The increase in mobility is mainly due to elimination of doubly charged acceptor states. The residual scattering is believed to be due, in part, to charged isolated impurities and, in part, to paired impurity dipoles.}, issn = {00218979}, doi = {10.1063/1.1660167}, author = {Aven, M.} } @article {Laue1970, title = {The measurement of solar spectral irradiance at different terrestrial elevations}, journal = {Solar Energy}, volume = {13}, number = {1}, year = {1970}, note = {
}, pages = {43 - 50, IN1-IN4, 51-57}, issn = {0038-092X}, doi = {DOI: 10.1016/0038-092X(70)90006-X}, url = {http://www.sciencedirect.com/science/article/B6V50-497T7KC-T/2/c932c2f01c2de3c36c0f461c991f791a}, author = {E.G. Laue} } @article {Cooper1969, title = {The absorption of radiation in solar stills}, journal = {Solar Energy}, volume = {12}, number = {3}, year = {1969}, note = {
}, pages = {333 - 346}, issn = {0038-092X}, doi = {DOI: 10.1016/0038-092X(69)90047-4}, url = {http://www.sciencedirect.com/science/article/B6V50-497BD6C-27/2/a4ca2069fe8c8b0cfa571de016d93cc5}, author = {P.I. Cooper} } @article {Tsai1969, title = {Shallow phosphorus diffusion profiles in silicon}, journal = {Proceedings of the IEEE}, volume = {57}, year = {1969}, month = {Jan-09-1969}, pages = {1499 - 1506}, issn = {0018-9219}, doi = {10.1109/PROC.1969.7325}, url = {http://ieeexplore.ieee.org/document/1449255/http://xplorestaging.ieee.org/ielx5/5/31124/01449255.pdf?arnumber=1449255}, author = {Tsai, J.C.C.} } @article {Conroy1968, title = {Electrical properties of the Group IV disulfides, titanium disulfide, zirconium disulfide, hafnium disulfide and tin disulfide}, journal = {Inorganic Chemistry}, volume = {7}, year = {1968}, month = {Jan-03-1968}, pages = {459 - 463}, issn = {0020-1669}, doi = {10.1021/ic50061a015}, url = {http://pubs.acs.org/doi/abs/10.1021/ic50061a015}, author = {Conroy, Lawrence E. and Park, Kyu Chang} } @article {Vazquez1968, title = {Electroreflectance Measurements on Mg2Si, Mg2Ge, and Mg2Sn}, journal = {Physical Review}, volume = {176}, year = {1968}, month = {Jan-12-1968}, pages = {905 - 908}, issn = {0031-899X}, doi = {10.1103/PhysRev.176.905}, url = {http://link.aps.org/doi/10.1103/PhysRev.176.905}, author = {Vazquez, F. and Forman, Richard and Cardona, Manuel} } @article {Furuseth1965, title = {On the Properties of alpha-MnS and MnS2.}, journal = {Acta Chemica Scandinavica}, volume = {19}, year = {1965}, month = {Jan-01-1965}, pages = {1405 - 1410}, issn = {0904-213X}, doi = {10.3891/acta.chem.scand.19-1405}, url = {http://actachemscand.org/doi/10.3891/acta.chem.scand.19-1405}, author = {Furuseth, Sigrid and Kjekshus, Arne and Niklasson, Rune J. V. and Brunvoll, J. and Hinton, Merv} } @article {Pliskin1964, title = {Nondestructive determination of thickness and refractive index of transparent films}, journal = {IBM Journal of Research Devices}, volume = {8}, number = {1}, year = {1964}, note = {
}, pages = {43{\textendash}51}, abstract = {

A simple nondestructive method of measuring the refractive index and thickness of transparent films on reflective substrates has been developed. The technique involves the use of a microscope equipped with a monochromatic filter on the objective and a stage that can be rotated so that the reflected light is observed at various angles. The film thickness, d, is given by d = {[\ΔN\λ]/[2\µ(cos} r2, - cos r1)], where \λ is the wavelength of the filtered light, \µ is the refractive index, and {\ΔN} is the number of fringes observed between the angles of refraction r2, and r1.

}, url = {http://portal.acm.org/citation.cfm?id=1662391}, author = {W. A. Pliskin and E. E. Conrad} } @book {Wyckoff1963, title = {Crystal Structures 1}, series = {Crystal Structures}, volume = {1}, year = {1963}, publisher = {Interscience Publishers}, organization = {Interscience Publishers}, edition = {2nd}, address = { New York, New York}, url = {http://rruff.geo.arizona.edu/AMS/AMC_text_files/13434_amc.txt}, author = {Ralph W G Wyckoff} } @article {simmons1963, title = {Elastic Constants of Pyrite}, journal = {Journal of Applied Physics}, volume = {34}, year = {1963}, month = {Jan-09-1963}, pages = {2736 - 2738}, issn = {0021-8979}, doi = {10.1063/1.1729801}, url = {http://aip.scitation.org/doi/10.1063/1.1729801http://aip.scitation.org/doi/pdf/10.1063/1.1729801}, author = {Simmons, Gene and Birch, Francis} } @article {Wolf1963, title = {Series Resistance Effects on Solar Cell Measurements}, journal = {Advanced Energy Conversion}, volume = {3}, year = {1963}, author = {M. Wolf and H. Rauschenbach} } @article {Shockley1961, title = {Detailed Balance Limit of Efficiency of p-n Junction Solar Cells}, journal = {Journal of Applied Physics}, volume = {32}, number = {3}, year = {1961}, pages = {510-519}, publisher = {AIP}, doi = {10.1063/1.1736034}, url = {http://link.aip.org/link/?JAP/32/510/1}, author = {William Shockley and Hans J. Queisser} } @article {robertson1961, title = {KNOOP HARDNESS NUMBERS FOR 127 OPAQUE MINERALS}, journal = {Geological Society of America Bulletin}, volume = {72}, year = {1961}, month = {Jan-01-1961}, pages = {621}, issn = {0016-7606}, doi = {10.1130/0016-7606(1961)72[621:KHNFOM]2.0.CO;2}, url = {https://pubs.geoscienceworld.org/gsabulletin/article/72/4/621-637/5310http://bulletin.geoscienceworld.org/cgi/doi/10.1130/0016-7606(1961)72\%5B621:KHNFOM\%5D2.0.CO;2}, author = {ROBERTSON, FORBES} } @conference {Dale1960, title = {High efficiency silicon solar cells}, booktitle = {Proceedings of the 14th Annual Power Sources Conference}, year = {1960}, note = {
}, month = {1960}, pages = {22}, publisher = {U.S. Army Signal Research and Development Lab}, organization = {U.S. Army Signal Research and Development Lab}, author = {B. Dale and H.G. Rudenberg} } @inbook {Shive1959, title = {Semiconductor Devices, Chapter 8}, year = {1959}, note = {
}, publisher = {Van Nostrand}, organization = {Van Nostrand}, address = {New Jersey}, author = {J.N. Shive} } @article {Smits1958, title = {Measurement of sheet resistivities with the four-point probe}, journal = {Bell System Technical Journal}, volume = {34}, year = {1958}, note = {
}, month = {May 1958}, pages = {711-718}, author = {F.M. Smits} } @article {Bube1958, title = {Photoconductivity of Zinc Selenide Crystals and a Correlation of Donor and Acceptor Levels in II-VI Photoconductors}, journal = {Phys. Rev.}, volume = {110}, year = {1958}, month = {Jun}, pages = {1040{\textendash}1049}, abstract = {Photosensitive crystals of zinc selenide have been prepared by incorporating suitable proportions of Group VII donors (e.g., bromine) and either Group I acceptors (copper or silver) or Group V acceptors (antimony or arsenic) in crystals prepared from the vapor phase. Photoconductivity phenomena characteristic of other II-VI photoconductors, such as (a) variation of photocurrent with a power of light intensity greater than unity, (b) temperature quenching of photoconductivity, and (c) infrared quenching of photoconductivity, are also found for zinc selenide. Sensitizing centers in ZnSe: Br: Cu and ZnSe: Br: Ag have levels lying at the same distance above the top of the valence band (0.6 ev) as sensitizing centers in CdSe, even though the band gap of ZnSe is 50\% larger than that of CdSe. Crystals with Group V acceptors are characterized in addition by a long-wavelength spectral response, out to 1.4 microns, associated with levels lying about 1.3 ev above the top of the valence band. By a consideration of known data on the conductivity, photoconductivity, and luminescence of II-VI compounds, a consistent correlation of donor and acceptor levels in these materials is possible.}, doi = {10.1103/PhysRev.110.1040}, url = {http://link.aps.org/doi/10.1103/PhysRev.110.1040}, author = {Bube, Richard H. and Lind, Edward L.} } @article {567, title = {Conversion of Solar to Electrical Energy}, journal = {American Journal of Physics}, volume = {25}, year = {1957}, month = {Jan-01-1957}, pages = {591}, abstract = {A photovoltaic device has been developed which converts solar radiation directly into electrical energy with an over-all efficiency of 11\%. This consists of a p-n junction formed by gaseous diffusion near the front surface of a silicon plate. In full sunlight a single cell furnishes approximately 30 ma of short circuit current per square centimeter of surface, 0.6 v of open circuit voltage, and 12 mw of power into a matched load per square centimeter of surface. Like other electric batteries, individual cells may be connected in series or parallel to obtain an increase in terminal voltage or current. The spectral response is a maximum near 0.7 {\textmu}, and the long wavelength cutoff is at approximately 1.1 {\textmu}. The efficiency of this new siliconp-n junctionphotovoltaic cell is greater by a factor of 20 than that previously reported for other types of photocells and makes the conversion of the sun{\textquoteright}s energy directly into electricity possible for a number of interesting applications. A Bell System field trial at Americus, Georgia, in which solar batteries are used to power a rural carrier telephone communication system, is described. A number of other possible applications for this new solar energy converter are discussed.}, issn = {00029505}, doi = {10.1119/1.1934565}, url = {http://link.aip.org/link/?AJP/25/591/1\&Agg=doi}, author = {Pearson, G. L.} } @booklet {Bell1955, title = {Bell Laboratories Record}, year = {1955} } @article {Chapin1954, title = {A New Silicon P-N Junction Photocell for Converting Solar Radiation into Electrical Power}, journal = {Journal of Applied Physics}, volume = {25}, year = {1954}, note = {
}, pages = {676-677}, author = {Chapin, D.M. and Fuller, C.S. and Pearson, G.L.} } @article {Hall1952, title = {Electron-Hole Recombination in Germanium}, journal = {Phys. Rev.}, volume = {87}, number = {2}, year = {1952}, note = {
}, month = {07/1952}, pages = {387}, publisher = {American Physical Society}, doi = {10.1103/PhysRev.87.387}, author = {Hall, R. N.} } @article {Kingsbury1952, title = {Photoelectric Properties of Tonically Bombarded Silicon}, journal = {Bell Systems Technical Journal}, volume = {31}, year = {1952}, note = {
}, pages = {802-815}, author = {Kingsbury, E.F. and Ohl, R.S.} } @article {Shockley1952, title = {Statistics of the Recombinations of Holes and Electrons}, journal = {Physical Review}, volume = {87}, number = {5}, year = {1952}, pages = {835}, abstract = {The statistics of the recombination of holes and electrons in semiconductors is analyzed on the basis of a model in which the recombination occurs through the mechanism of trapping. A trap is assumed to have an energy level in the energy gap so that its charge may have either of two values differing by one electronic charge. The dependence of lifetime of injected carriers upon initial conductivity and upon injected carrier density is discussed.}, doi = {10.1103/PhysRev.87.835}, url = {http://link.aps.org/doi/10.1103/PhysRev.87.835}, author = {William Shockley and W. T. Read} } @article {Pfann1952, title = {Zone-refining}, journal = {Trans. AIME,}, volume = {194}, year = {1952}, note = {
}, chapter = {747}, author = {W. G. Pfann} } @book {shockley1950, title = {Electrons and holes in semiconductors with applications to transistor electronics}, year = {1950}, publisher = {van Nostrand}, organization = {van Nostrand}, address = {New York}, author = {William Shockley} } @article {Shockley1949, title = {The theory of p-n Junctions in semiconductors and p-n junction transistors}, journal = {Bell System Technical Journal}, volume = {28}, year = {1949}, month = {Jan-07-1949}, pages = {435 - 489}, abstract = {In a single crystal of semiconductor the impurity concentration may vary from p-type to n-type producing a mechanically continuous rectifying junction. The theory of potential distribution and rectification for p-n junctions is developed with emphasis on germanium. The currents across the junction are carried by the diffusion of holes in n-type material and electrons in p-type material, resulting in an admittance for a simple case varying as (1 + iωτ p ) 1/2 where τ p is the lifetime of a hole in the n-region. Contact potentials across p-n junctions, carrying no current, may develop when hole or electron injection occurs. The principles and theory of a p-n-p transistor are described.}, doi = {10.1002/bltj.1949.28.issue-310.1002/j.1538-7305.1949.tb03645.x}, url = {http://doi.wiley.com/10.1002/bltj.1949.28.issue-3https://ieeexplore.ieee.org/document/6773080}, author = {Shockley, W.} } @article {Ohl1941, title = {Light-Sensitive Electric Device}, journal = {U.S. Patent}, volume = {2}, year = {1941}, note = {
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}, pages = {457}, author = {Nix, F.C. and Treptwo, A.W.} } @article {Bauer1934, title = {Absolutwerte der optischen Absorptionskonstanten von Alkalihalogenidkristallen im Gebiet ihrer ultravioletten Eigenfrequenzen}, journal = {Annalen der Physik}, volume = {411}, year = {1934}, month = {Jan-01-1934}, pages = {434 - 464}, issn = {00033804}, doi = {10.1002/(ISSN)1521-388910.1002/andp.v411:410.1002/andp.19344110405}, author = {Bauer, Gerhard} } @article {Grondahl1933, title = {The Copper-Cuprous-Oxide Rectifier and Photoelectric Cell}, journal = {Review of Modern Physics}, volume = {5}, year = {1933}, note = {
}, pages = {141}, author = {Grondahl, L.O.} } @article {Bergmann1931, title = {Uber eine neue Selen- Sperrschicht Photozelle}, journal = {Physikalische Zeitschrift}, volume = {32}, year = {1931}, note = {
}, pages = {286}, author = {Bergmann, L.} } @article {Auger1923, title = {Sur les rayons \β secondaires produits dans un gaz par des rayons X}, journal = {C.R.A.S.}, volume = {177}, year = {1923}, note = {
}, pages = {169-171}, author = {P. Auger} } @article {Milne1921, title = {Note on the Equation, of Time}, journal = {The Mathematical Gazette}, volume = {10}, year = {1921}, month = {Jan-12-1921}, pages = {372 - 375}, issn = {0025-5572}, doi = {10.1017/S0025557200232944}, url = {https://www.cambridge.org/core/product/identifier/S0025557200232944/type/journal_articlehttps://www.cambridge.org/core/services/aop-cambridge-core/content/view/S0025557200232944}, author = {Milne, R. M.} } @article {Czochralski1918, title = {Ein neues Verfahren zur Messung der Kristallisationsgeschwindigheit der Metalle}, journal = {Zeitschrift f{\"u}r physikalische Chemie}, volume = {92}, year = {1918}, pages = {219{\textendash}221}, author = {Czochralski, J.} } @article {Einstein1905, title = {Generation and transformation of light}, journal = {Annalen der Physik}, volume = {17}, year = {1905}, note = {
}, month = {06/1905}, chapter = {132}, keywords = {Einstein1905}, author = {A. Einstein} } @article {Planck1901, title = {Distribution of energy in the spectrum}, journal = {Annalen der Physik}, volume = {4}, year = {1901}, note = {
}, month = {03/1901}, pages = {553-563}, author = {M. Planck} } @article {Planck1900, title = {Distribution of energy in the normal spectrum}, journal = {Verhandlungen der Deutschen Physikalischen Gesellschaft}, volume = {2}, year = {1900}, note = {
}, pages = {237-245}, author = {M. Planck} } @article {Fritts1883, title = {On a New Form of Selenium Photocell}, journal = {American J. of Science}, volume = {26}, year = {1883}, note = {
}, pages = {465}, author = {Fritts, C.E.} } @article {Adams1877, title = {The Action of Light on Selenium}, journal = {Proceedings of the Royal Society, London}, volume = {A25}, year = {1877}, note = {
}, pages = {113}, author = {Adams, W.G. and Day, R.E.} } @article {Braun1874, title = {On Conductance in Metal Sulphides}, journal = {Ann. d. Physik}, volume = {153}, year = {1874}, note = {
}, pages = {556}, author = {Braun, F.} } @article {Becquerel1841, title = {Memoire sur les effects d{\textasciiacute}electriques produits sous l{\textasciiacute}influence des rayons solaires}, journal = {Annalen der Physick und Chemie}, volume = {54}, year = {1841}, note = {
}, pages = {35-42}, author = {Becquerel, A.E.} } @article {Becquerel1839, title = {Recherches sur les effets de la radiation chimique de la lumiere solaire au moyen des courants electriques}, journal = {Comptes Rendus de L{\textasciiacute}Academie des Sciences}, volume = {9}, year = {1839}, note = {
}, pages = {145-149}, author = {Becquerel, A.E.} } @article {TiS, title = {TITANIUM(IV) SULFIDE CAS No. 12039-13-3}, url = {http://www.chemicalbook.com/ChemicalProductProperty_EN_CB2240473.htm} }