%0 Journal Article %J Journal of Applied Physics %D 1991 %T Improved value for the silicon intrinsic carrier concentration from 275 to 375 K %A A. B. Sproul %A Martin A Green %K CARRIER DENSITY %K IV CHARACTERISTIC %K JUNCTION DIODES %K MEDIUM TEMPERATURE %K MINORITY CARRIERS %K SANDIA LABORATORIES %K SILICON %K SILICON DIODES %K TEMPERATURE DEPENDENCE %B Journal of Applied Physics %I AIP %V 70 %P 846-854 %G eng %U http://link.aip.org/link/?JAP/70/846/1 %R 10.1063/1.349645