Biblio

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2003
Y. Imai, Watanabe, A., and Mukaida, M., “Electronic structures of semiconducting alkaline-earth metal silicides”, Journal of Alloys and Compounds, vol. 358, no. 1-2, pp. 257 - 263, 2003.
2002
J. Muscat, Hung, A., Russo, S., and Yarovsky, I., “First-principles studies of the structural and electronic properties of pyrite”, Physical Review B, vol. 65, no. 5, 2002.
2001
D. Macdonald, Sinton, R. A., and Cuevas, A., “On the use of a bias-light correction for trapping effects in photoconductance-based lifetime measurements of silicon”, Journal of Applied Physics, vol. 89, pp. 2772-2778, 2001.
2000
K. R. McIntosh and Honsberg, C. B., “The Influence of Edge Recombination on a Solar Cell’s IV Curve”, 16th European Photovoltaic Solar Energy Conference. 2000.
M. J. O’Neil and McDanal, A. J., “Outdoor measurement of 28% efficiency for a mini-concentrator module”, National Center for Photovoltaics Program Review Meeting. Denver, USA, 2000.
T. Markvart, “Solar Electricity”, p. 271, 2000.
1999
A. Rockett et al., “Na incorporation in Mo and CuInSe2 from production processes”, Solar energy materials and solar cells, vol. 59, pp. 255–264, 1999.
R. S. Mane, Sankapal, B. R., and Lokhande, C. D., “Photoelectrochemical cells based on chemically deposited nanocrystalline Bi2S3 thin films”, Materials Chemistry and Physics, vol. 60, no. 2, pp. 196 - 203, 1999.
1998
T. Maruyama, “Copper oxide thin films prepared by chemical vapor deposition from copper dipivaloylmethanate”, Solar Energy Materials and Solar Cells, vol. 56, no. 1, pp. 85 - 92, 1998.
C. D. Lokhande et al., “Process and characterisation of chemical bath deposited manganese sulphide (MnS) thin films”, Thin Solid Films, vol. 330, no. 2, pp. 70 - 75, 1998.
1997
R. Einhaus, Vazsonyi, E., Szlufcik, J., Nijs, J., and Mertens, R., “Isotropic texturing of multicrystalline silicon wafers with acidic texturing solutions”, Twenty Sixth IEEE Photovoltaic Specialists Conference. New York, NY, USA, pp. 167-170, 1451, 1997.
J. Szlufcik, Sivoththaman, S., Nlis, J. F., Mertens, R. P., and Van-Overstraeten, R., “Low-cost industrial technologies of crystalline silicon solar cells”, Proceedings-of-the-IEEE, vol. 85. pp. 711-730, 1997.
R. Chandramohan, Sanjeeviraja, C., and Mahalingam, T., “Preparation of Zinc Selenide Thin Films by Electrodeposition Technique for Solar Cell Applications”, physica status solidi (a), vol. 163, no. 2, pp. R11 - R12, 1997.
J. Horzel, Szlufcik, J., Nijs, J., and Mertens, R., “A simple processing sequence for selective emitters”, Twenty Sixth IEEE Photovoltaic Specialists Conference. New York, NY, USA, pp. 139-142, 1997.
1993
K. Misiakos and Tsamakis, D., “Accurate measurements of the silicon intrinsic carrier density from 78 to 340 K”, Journal of Applied Physics, vol. 74, no. 5, p. 3293, 1993.
P. K. Nair, Nair, M. T. S., Pathirana, H. M. K. K., Zingaro, R. A., and Meyers, E. A., “Structure and Composition of Chemically Deposited Thin Films of Bismuth Sulfide and Copper Sulfide Effect on Optical and Electrical Properties”, Journal of The Electrochemical Society, vol. 140, pp. 754–759, 1993.
1990
C. H. Wang, Misiakos, K., and Neugroschel, A., “Minority-carrier transport parameters in n-type silicon”, IEEE Transactions on Electron Devices, vol. 37, pp. 1314 - 1322, 1990.
R. Perez, Ineichen, P., Seals, R., Michalsky, J., and Stewart, R., “Modeling daylight availability and irradiance components from direct and global irradiance”, Solar Energy, vol. 44, pp. 271–289, 1990.
R. Perez, Ineichen, P., Seals, R., Michalsky, J., and Stewart, R., “Modeling daylight availability and irradiance components from direct and global irradiance”, Solar Energy, vol. 44, pp. 271 - 289, 1990.
1988
K. Emery, Myers, D., and Rummel, S., “SOLAR SIMULATION - PROBLEMS AND SOLUTIONS”, 20th IEEE PV Specialists Conference. p. 1087, 1988.
1986
P. Mialhe, Charles, J. P., Khoury, A., and Bordure, G., “The diode quality factor of solar cells under illumination”, Journal of Physics D: Applied Physics, vol. 19, no. 3, pp. 483 - 492, 1986.
1983
G. Masetti, Severi, M., and Solmi, S., “Modeling of carrier mobility against carrier concentration in arsenic-, phosphorus-, and boron-doped silicon”, IEEE Transactions on Electron Devices, vol. ED-30, pp. 764–9, 1983.
1981
W. R. Thurber, Mattis,, Liu,, and Filliben, “The Relationship Between Resistivity and Dopant Density for Phosphorus- and Boron-Doped Silicon”. U.S. Department of Commerce National Bureau of Standards, 1981.
1980
W. R. Thurber, Mattis, R. L., Liu, Y. M., and Filliben, J. J., “Resistivity-Dopant Density Relationship for Boron-Doped Silicon”, Journal of The Electrochemical Society, vol. 127, pp. 2291-2294, 1980.
W. R. Thurber, Mattis, R. L., Liu, Y. M., and Filliben, J. J., “Resistivity-Dopant Density Relationship for Phosphorus-Doped Silicon”, Journal of The Electrochemical Society, vol. 127, pp. 1807-1812, 1980.

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