@article {Hong2016, title = {Trigonal Cu 2 -II-Sn-VI 4 (II = Ba, Sr and VI = S, Se) quaternary compounds for earth-abundant photovoltaics}, journal = {Phys. Chem. Chem. Phys.}, volume = {18}, year = {2016}, month = {Jan-01-2016}, pages = {4828 - 4834}, issn = {1463-9076}, doi = {10.1039/C5CP06977G}, url = {http://xlink.rsc.org/?DOI=C5CP06977G}, author = {Hong, Feng and Lin, Wenjun and Meng, Weiwei and Yan, Yanfa} } @article {wang2014device, title = {Device characteristics of CZTSSe thin-film solar cells with 12.6\% efficiency}, journal = {Advanced Energy Materials}, volume = {4}, year = {2014}, author = {Wang, Wei and Winkler, Mark T and Oki Gunawan and Tayfun Gokmen and Todorov, Teodor K and Zhu, Yu and Mitzi, David B} } @article {Gokmen2013, title = {Band tailing and efficiency limitation in kesterite solar cells}, journal = {Applied Physics Letters}, volume = {103}, year = {2013}, pages = {103506}, doi = {10.1063/1.4820250}, url = {http://dx.doi.org/10.1063/1.4820250}, author = {Tayfun Gokmen and Oki Gunawan and Teodor K. Todorov and David B. Mitzi} } @inbook {mcevoy2012solar, title = {Cu(In,Ga)Se2 Thin-Film Solar Cells}, booktitle = {Solar Cells: Materials, Manufacture and Operation}, year = {2012}, pages = {262}, publisher = {Academic Press}, organization = {Academic Press}, address = {London}, author = {Rau, U. and Schock, H.W. and Castaner, L}, editor = {McEvoy, Augustin and Markvart, Tom} } @article {533, title = {Isotextured Silicon Solar Cell Analysis and Modeling 1: Optics}, journal = {IEEE Journal of Photovoltaics}, volume = {2}, year = {2012}, month = {Jan-10-2012}, pages = {457 - 464}, issn = {2156-3381}, doi = {10.1109/JPHOTOV.2012.2206569}, author = {Baker-Finch, Simeon C. and McIntosh, Keith R. and Terry, Mason L.} } @conference {532, title = {OPAL 2: Rapid optical simulation of silicon solar cells}, booktitle = {2012 IEEE 38th Photovoltaic Specialists Conference (PVSC)2012 38th IEEE Photovoltaic Specialists Conference}, year = {2012}, publisher = {IEEE}, organization = {IEEE}, address = {Austin, TX, USA}, abstract = {The freeware program OPAL 2 computes the optical losses associated with the front surface of a Si solar cell. It calculates the losses for any angle of incidence within seconds, where the short computation time is achieved by decoupling the ray tracing from the Fresnel equations. Amongst other morphologies, OPAL 2 can be used to assess the random-pyramid texture of c-Si solar cells, or the {\textquoteleft}isotexture{\textquoteright} of mc-Si solar cells, and to determine (i) the optimal thickness of an antireflection coating with or without encapsulation, (ii) the impact of imperfect texturing, such as non-ideal texture angles, over-etched isotexture, and flat regions, and (iii) the subsequent 1D generation profile in the Si. This paper describes the approach and assumptions employed by OPAL 2 and presents examples that demonstrate the dependence of optical losses on texture quality and incident angle.}, isbn = {978-1-4673-0064-3}, doi = {10.1109/PVSC.2012.6317616}, author = {McIntosh, Keith R. and Baker-Finch, Simeon C.} } @article {Liu2011, title = {Electronic structure of TiS2 and its electric transport properties under high pressure}, journal = {Journal of Applied Physics}, volume = {109}, year = {2011}, month = {Jan-01-2011}, pages = {053717}, issn = {00218979}, doi = {10.1063/1.3552299}, url = {http://link.aip.org/link/JAPIAU/v109/i5/p053717/s1\&Agg=doi}, author = {Liu, Bao and Yang, Jie and Han, Yonghao and Hu, Tingjing and Ren, Wanbin and Liu, Cailong and Ma, Yanzhang and Gao, Chunxiao} } @article {Mitzi2011, title = {The path towards a high-performance solution-processed kesterite solar cell}, journal = {Solar Energy Materials and Solar Cells}, volume = {95}, year = {2011}, pages = {1421 - 1436}, abstract = {Despite the promise of thin-film Cu(In,Ga)(S,Se)2 (CIGSSe) chalcopyrite and CdTe photovoltaic technologies with respect to reducing cost per watt of solar energy conversion, these approaches rely on elements that are either costly and/or rare in the earth{\textquoteright}s crust (e.g., In, Ga, Te) or that present toxicity issues (e.g., Cd), thereby potentially limiting these technologies in terms of future cost reduction and production growth. In order to develop a photovoltaic technology that is truly compatible with terawatt deployment, it is desirable to consider material systems that employ less toxic and lower cost elements, while maintaining the advantages of the chalcopyrite and CdTe materials with respect to appropriate direct band gap tunability over the solar spectrum, high device performance (e.g., \>10\% power conversion efficiency) and compatibility with low-cost manufacturing. In this review, the development of kesterite-based Cu2ZnSn(S,Se)4 (CZTSSe) thin-film solar cells, in which the indium and gallium from \{CIGSSe\} are replaced by the readily available elements zinc and tin, will be reviewed. While vacuum-deposited devices have enabled optimization within the compositional phase space and yielded selenium-free \{CZTS\} device efficiencies of as high as 6.8\%, more recently a liquid-based approach has been described that has enabled deposition of \{CZTSSe\} devices with power conversion efficiency of 9.7\%, bringing the kesterite-based technology into a range of potential commercial interest. Electrical characterization studies on these high-performance \{CZTSSe\} cells reveal some of the key loss mechanisms (e.g., dominant interface recombination, high series resistance and low minority carrier lifetime) that limit the cell performance. Further elucidation of these mechanisms, as well as building an understanding of long-term device stability, are required to help propel this relatively new technology forward.}, keywords = {Solution processing}, issn = {0927-0248}, doi = {http://dx.doi.org/10.1016/j.solmat.2010.11.028}, url = {http://www.sciencedirect.com/science/article/pii/S0927024810006719}, author = {David B. Mitzi and Oki Gunawan and Teodor K. Todorov and Kejia Wang and Supratik Guha} } @conference {Cousins2010, title = {Gen III: Improved Performance at Lower Cost}, booktitle = {35th IEEE Photovoltaic Specialists Conference}, year = {2010}, note = {
}, publisher = {IEEE}, organization = {IEEE}, address = {Honolulu, Hawaii}, author = {Peter J. Cousins and David D. Smith and Hsin-Chiao Luan and Jane Manning and Tim D. Dennis and Ann Waldhaue and Karen E. Wilson and Gabriel Harley and William P. Mulligan} } @article {Prabahar2010, title = {Optical properties of copper indium diselenide thin films}, journal = {Chalcogenide Letters}, volume = {7}, year = {2010}, pages = {49{\textendash}58}, author = {Prabahar, S and Balasubramanian, V and Suryanarayanan, N and Muthukumarasamy, N} } @article {Motoyoshi2010, title = {Structure and photovoltaic activity of cupric oxide-based thin film solar cells}, journal = {Journal of the Ceramic Society of Japan}, volume = {118}, year = {2010}, month = {Jan-01-2010}, pages = {1021 - 1023}, issn = {1882-0743}, doi = {10.2109/jcersj2.118.1021}, url = {http://joi.jlc.jst.go.jp/JST.JSTAGE/jcersj2/118.1021?from=CrossRef}, author = {MOTOYOSHI, Ryosuke and OKU, Takeo and KIDOWAKI, Hiroki and SUZUKI, Atsushi and KIKUCHI, Kenji and KIKUCHI, Shiomi and JEYADEVAN, Balachandran} } @article {Katagiri2009, title = {Development of CZTS-based thin film solar cells}, journal = {Thin Solid Films}, volume = {517}, year = {2009}, pages = {2455{\textendash}2460}, author = {Hironori Katagiri and Jimbo, Kazuo and Maw, Win Shwe and Oishi, Koichiro and Yamazaki, Makoto and Araki, Hideaki and Takeuchi, Akiko} } @article {Calixto2009, title = {Structural, optical, and electrical properties of tin sulfide thin films grown by spray pyrolysis}, journal = {Thin Solid Films}, volume = {517}, year = {2009}, month = {Jan-02-2009}, pages = {2497 - 2499}, issn = {00406090}, doi = {10.1016/j.tsf.2008.11.026}, url = {http://linkinghub.elsevier.com/retrieve/pii/S0040609008014077http://api.elsevier.com/content/article/PII:S0040609008014077?httpAccept=text/xmlhttp://api.elsevier.com/content/article/PII:S0040609008014077?httpAccept=text/plain}, author = {Calixto-Rodriguez, M. and Martinez, H. and Sanchez-Juarez, A. and Campos-Alvarez, J. and Tiburcio-Silver, A. and Calixto, M.E.} } @proceedings {DeCeuster2007, title = {Low Cost, High Volume Production of >22\% Efficiency Silicon Solar Cells}, year = {2007}, note = {
}, author = {De Ceuster, D. and P. Cousins and D. Rose and M. Cudzinovic and W. Mulligan} } @article {Pysch2007, title = {A review and comparison of different methods to determine the series resistance of solar cells}, journal = {Solar Energy Materials and Solar Cells}, volume = {91}, year = {2007}, note = {
}, month = {11/2007}, pages = {1698 - 1706}, issn = {09270248}, doi = {10.1016/j.solmat.2007.05.026}, author = {PYSCH, D and A. Mette and Stefan W. Glunz} } @article {Mette2007, title = {Series resistance characterization of industrial silicon solar cells with screen-printed contacts using hotmelt paste}, journal = {Progress in Photovoltaics: Research and Applications}, volume = {15}, year = {2007}, note = {
}, pages = {493-505}, author = {A. Mette and et al} } @conference {bunea_low_2006, title = {Low Light Performance of Mono-Crystalline Silicon Solar Cells}, booktitle = {4th World Conference on Photovoltaic Energy Conference}, year = {2006}, month = {2006}, pages = {1312{\textendash}1314}, address = {Waikoloa, HI}, doi = {10.1109/WCPEC.2006.279655}, url = {http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=4059885\&tag=1}, author = {Gabriela Bunea and Karen Wilson and Yevgeny Meydbray and Matthew Campbell and Denis De Ceuster} } @article {Parhizkar2005, title = {Nanocrystalline CuO films prepared by pyrolysis of Cu-arachidate LB multilayers}, journal = {Colloids and Surfaces A: Physicochemical and Engineering Aspects}, volume = {257-258}, year = {2005}, month = {Jan-05-2005}, pages = {277 - 282}, issn = {09277757}, doi = {10.1016/j.colsurfa.2004.10.029}, url = {http://linkinghub.elsevier.com/retrieve/pii/S0927775704007320}, author = {Parhizkar, M. and Singh, Sukhvinder and Nayak, P.K. and Kumar, Nigvendra and Muthe, K.P. and Gupta, S.K. and Srinivasa, R.S. and Talwar, S.S. and Major, S.S.} } @article {Ehm2004, title = {Pressure-induced structural phase transition in the IV{\textendash}VI semiconductor SnS}, journal = {Journal of Physics: Condensed Matter}, volume = {16}, year = {2004}, month = {Feb-06-2004}, pages = {3545 - 3554}, abstract = {The structural behaviour of SnS under high-pressure has been investigated by angular dispersive synchrotron powder diffraction up to 38.5 GPa. A structural phase transition from orthorhombic α-SnS to monoclinic γ-SnS was observed at 18.15 GPa. The fit of a Birch{\textendash}Murnaghan equation-of-state gave the volume at zero pressure of V0 = 192.6(3) {\r A}3, the bulk modulus at zero pressure of B0 = 36.6(9) GPa and the pressure derivative of the bulk modulus B{\textquoteright}=5.5(2) for α-SnS and V0 = 160(1) {\r A}, B0 = 86.0(5) GPa and B{\textquoteright}=4 for γ-SnS. The improper ferro-elastic transition is of first-order and is accompanied by a large volume discontinuity of about 9.1\%. The phase transition can be described in terms of a group/subgroup relationship. The doubling of the unit cell indicates a wavevector (1/2,0,1/2) at the U-point in the Brillouin zone.}, issn = {0953-8984}, doi = {10.1088/0953-8984/16/21/004}, url = {http://stacks.iop.org/0953-8984/16/i=21/a=004?key=crossref.fbc017dcad3d417136827c57d4ea2141}, author = {Ehm, L and Knorr, K and Dera, P and Krimmel, A and Bouvier, P and Mezouar, M} } @book {Madelung2004, title = {Semiconductors Data Handbook}, year = {2004}, pages = {691}, publisher = {Springer}, organization = {Springer}, address = {Berlin}, isbn = {9783642188657 3642188656}, url = {http://www.amazon.com/Semiconductors-Data-Handbook-Otfried-Madelung/dp/3540404880}, author = {Madelung, O} } @book {Madelung2004b, title = {Semiconductors Data Handbook}, year = {2004}, pages = {815-835}, publisher = {Springer}, organization = {Springer}, address = {Berlin}, isbn = {9783642188657 3642188656}, url = {http://www.amazon.com/Semiconductors-Data-Handbook-Otfried-Madelung/dp/3540404880}, author = {Madelung, O} } @proceedings {Honsberg2003, title = {Dependence of aluminium alloying on solar cell processing conditions}, year = {2003}, note = {
}, author = {Christiana B Honsberg and Anwar, K.K. and Mehrvarz, H.R. and Cotter, J.E. and Wenham, S.R.} } @article {Imai2003, title = {Electronic structures of semiconducting alkaline-earth metal silicides}, journal = {Journal of Alloys and Compounds}, volume = {358}, year = {2003}, month = {Jan-08-2003}, pages = {257 - 263}, issn = {09258388}, doi = {10.1016/S0925-8388(03)00037-9}, url = {http://linkinghub.elsevier.com/retrieve/pii/S0925838803000379}, author = {Imai, Yoji and Watanabe, Akio and Mukaida, Masakazu} } @article {muscat2000, title = {First-principles studies of the structural and electronic properties of pyrite}, journal = {Physical Review B}, volume = {65}, year = {2002}, month = {Jan-01-2002}, issn = {0163-1829}, doi = {10.1103/PhysRevB.65.054107}, url = {https://link.aps.org/doi/10.1103/PhysRevB.65.054107http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.65.054107/fulltexthttp://link.aps.org/article/10.1103/PhysRevB.65.054107}, author = {Muscat, Joseph and Hung, Andrew and Russo, Salvy and Yarovsky, Irene} } @article {Macdonald2001, title = {On the use of a bias-light correction for trapping effects in photoconductance-based lifetime measurements of silicon}, journal = {Journal of Applied Physics}, volume = {89}, number = {5}, year = {2001}, pages = {2772-2778}, publisher = {AIP}, keywords = {CARRIER DENSITY, carrier lifetime, electron traps, electron-hole recombination, elemental semiconductors, hole traps, photoconductivity, SILICON, solar cells}, doi = {10.1063/1.1346652}, url = {http://link.aip.org/link/?JAP/89/2772/1}, author = {Daniel Macdonald and Ronald A. Sinton and Andr{\'e}s Cuevas} } @proceedings {McIntosh2000, title = {The Influence of Edge Recombination on a Solar Cell{\textquoteright}s IV Curve}, year = {2000}, note = {
}, author = {McIntosh, K. R. and Christiana B Honsberg} } @proceedings {ONeil2000, title = {Outdoor measurement of 28\% efficiency for a mini-concentrator module}, year = {2000}, note = {
}, address = {Denver, USA}, author = {O{\textquoteright}Neil, M.J. and McDanal, A.J.} } @article {Markvart2000, title = {Solar Electricity}, year = {2000}, note = {

1. Electricity from the Sun

2. Solar Radiation

3. Solar Cells

4. Photovoltaic System Engineering

5. Applications

6. Environmental Impacts of Photovoltaics

7. Advanced and Special Topics

Index

}, pages = {271}, publisher = {John Wiley \& Sons}, edition = {Second Edition}, address = {Chichester, England}, isbn = {0-471-98853-7}, url = {http://www.amazon.com/Solar-Electricity-2nd-Tomas-Markvart/dp/0471988537/ref=sr_1_1?s=books\&ie=UTF8\&qid=1279647029\&sr=1-1}, author = {Tomas Markvart} } @article {rockett1999incorporation, title = {Na incorporation in Mo and CuInSe2 from production processes}, journal = {Solar energy materials and solar cells}, volume = {59}, year = {1999}, pages = {255{\textendash}264}, author = {Rockett, Angus and Granath, Karin and Asher, S and Al Jassim, MM and Hasoon, F and Matson, R and Basol, B and Kapur, V and Britt, JS and Gillespie, T and others} } @article {Mane1999, title = {Photoelectrochemical cells based on chemically deposited nanocrystalline Bi2S3 thin films}, journal = {Materials Chemistry and Physics}, volume = {60}, year = {1999}, month = {Jan-08-1999}, pages = {196 - 203}, issn = {02540584}, doi = {10.1016/S0254-0584(99)00085-1}, url = {http://linkinghub.elsevier.com/retrieve/pii/S0254058499000851}, author = {Mane, R.S. and Sankapal, B.R. and Lokhande, C.D.} } @article {Maruyama1998, title = {Copper oxide thin films prepared by chemical vapor deposition from copper dipivaloylmethanate}, journal = {Solar Energy Materials and Solar Cells}, volume = {56}, year = {1998}, month = {Jan-09-1998}, pages = {85 - 92}, issn = {09270248}, doi = {10.1016/S0927-0248(98)00128-7}, url = {http://linkinghub.elsevier.com/retrieve/pii/S0927024898001287}, author = {Maruyama, Toshiro} } @article {Lokhande1998, title = {Process and characterisation of chemical bath deposited manganese sulphide (MnS) thin films}, journal = {Thin Solid Films}, volume = {330}, year = {1998}, month = {Jan-09-1998}, pages = {70 - 75}, issn = {00406090}, doi = {10.1016/S0040-6090(98)00500-8}, url = {http://linkinghub.elsevier.com/retrieve/pii/S0040609098005008}, author = {Lokhande, C.D. and Ennaoui, A. and Patil, P.S. and Giersig, M. and Muller, M. and Diesner, K. and Tributsch, H.} } @proceedings {Einhaus1997, title = {Isotropic texturing of multicrystalline silicon wafers with acidic texturing solutions}, year = {1997}, note = {
}, pages = {167-170, 1451}, address = {New York, NY, USA}, author = {Einhaus, R. and Vazsonyi, E. and Szlufcik, J. and Nijs, J. and Mertens, R.} } @proceedings {Szlufcik1997, title = {Low-cost industrial technologies of crystalline silicon solar cells}, volume = {85}, year = {1997}, note = {
}, pages = {711-730}, author = {Szlufcik, J. and Sivoththaman, S. and Nlis, J.F. and Mertens, R.P. and Van-Overstraeten, R.} } @article {Chandramohan1997, title = {Preparation of Zinc Selenide Thin Films by Electrodeposition Technique for Solar Cell Applications}, journal = {physica status solidi (a)}, volume = {163}, year = {1997}, month = {Jan-10-1997}, pages = {R11 - R12}, issn = {00318965}, doi = {10.1002/(ISSN)1521-396X10.1002/1521-396X(199710)163:2<>1.0.CO;2-U10.1002/1521-396X(199710)163:23.0.CO;2-3}, author = {Chandramohan, R. and Sanjeeviraja, C. and Mahalingam, T.} } @proceedings {Horzel1997, title = {A simple processing sequence for selective emitters}, year = {1997}, note = {
}, pages = {139-142}, address = {New York, NY, USA}, author = {Horzel, J. and Szlufcik, J. and Nijs, J. and Mertens, R.} } @article {Misiakos93, title = {Accurate measurements of the silicon intrinsic carrier density from 78 to 340 K}, journal = {Journal of Applied Physics}, volume = {74}, year = {1993}, month = {Jan-01-1993}, pages = {3293}, abstract = {The intrinsic carrier density in silicon has been measured by a novel technique based on low-frequency capacitance measurements of a p+-i-n+ diode biased in high injection. The major advantage of the method is its insensitivity to uncertainties regarding the exact values of the carrier mobilities, the recombination parameters, and the doping density. The intrinsic carrier density was measured in the temperature range from 78 to 340 K. At 300 K the value of ni was found to be (9.7{\textpm}0.1){\texttimes}10^9 cm-3.}, issn = {00218979}, doi = {10.1063/1.354551}, author = {Misiakos, Konstantinos and Tsamakis, Dimitris} } @article {Nair1993, title = {Structure and Composition of Chemically Deposited Thin Films of Bismuth Sulfide and Copper Sulfide Effect on Optical and Electrical Properties}, journal = {Journal of The Electrochemical Society}, volume = {140}, year = {1993}, pages = {754{\textendash}759}, abstract = {Chemically deposited thin films of bismuth sulfide (0.13 μm) and copper sulfide (0.3 μm) and copper sulfide films deposited on bismuth sulfide have been studied so as to obtain information about their structure, composition, thermal stability, and their effect on the optical and electrical properties. The studies establish that bismuth sulfide thin films become crystalline upon air annealing near {200{\textdegree}C} and remain stable up to {300{\textdegree}C.} But oxygen chemisorption reduces the photo- and dark conductivities of the films annealed at {300{\textdegree}C.} The studies establish that the copper sulfide films are (covellite), which is stable up to {220{\textdegree}C.} However, films deposited on bismuth sulfide substrate films retain useful electrical and optical properties for annealing temperatures up to {\~{}300{\textdegree}C.}}, keywords = {annealing, bismuth compounds, copper compounds, optical properties, Thin films}, issn = {0013-4651, 1945-7111}, doi = {10.1149/1.2056153}, url = {http://jes.ecsdl.org/content/140/3/754}, author = {Nair, P. K. and Nair, M. T. S. and Pathirana, Hema M. K. K. and Zingaro, Ralph A. and Meyers, Edward A.} } @article {Wang1990, title = {Minority-carrier transport parameters in n-type silicon}, journal = {IEEE Transactions on Electron Devices}, volume = {37}, year = {1990}, note = {
}, pages = {1314 - 1322}, issn = {00189383}, doi = {10.1109/16.108194}, author = {Wang, C.H. and Misiakos, K. and Neugroschel, A.} } @article {Perez1990, title = {Modeling daylight availability and irradiance components from direct and global irradiance}, journal = {Solar Energy}, volume = {44}, number = {5}, year = {1990}, note = {
}, pages = {271{\textendash}289}, abstract = {

This paper presents the latest versions of several models developed by the authors to predict short time-step solar energy and daylight availability quantities needed by energy system modelers or building designers. The modeled quantities are global, direct and diffuse daylight illuminance, diffuse irradiance and illuminance impinging on tilted surfaces of arbitrary orientation, sky zenith luminance and sky luminance angular distribution. All models are original except for the last one which is extrapolated from current standards. All models share a common operating structure and a common set of input data: Hourly (or higher frequency) direct (or diffuse) and global irradiance plus surface dew point temperature. Key experimental observations leading to model development are briefly reviewed. Comprehensive validation results are presented. Model accuracy, assessed in terms of root-mean-square and mean bias errors, is analyzed both as a function of insolation conditions and site climatic environment.

}, issn = {{0038-092X}}, doi = {10.1016/0038-092X(90)90055-H}, url = {http://www.sciencedirect.com/science/article/B6V50-497T9KG-S0/2/034fdf1417cea3a44d8509fe805f679e}, author = {Richard Perez and Pierre Ineichen and Robert Seals and Joseph Michalsky and Ronald Stewart} } @article {Perez1990, title = {Modeling daylight availability and irradiance components from direct and global irradiance}, journal = {Solar Energy}, volume = {44}, number = {5}, year = {1990}, note = {
}, pages = {271 - 289}, issn = {0038-092X}, doi = {DOI: 10.1016/0038-092X(90)90055-H}, url = {http://www.sciencedirect.com/science/article/B6V50-497T9KG-S0/2/034fdf1417cea3a44d8509fe805f679e}, author = {Richard Perez and Pierre Ineichen and Robert Seals and Joseph Michalsky and Ronald Stewart} } @proceedings {Emery1988, title = {SOLAR SIMULATION - PROBLEMS AND SOLUTIONS}, year = {1988}, note = {
}, pages = {1087}, author = {Emery, K. and Myers, D. and Rummel, S.} } @article {Mialhe1986, title = {The diode quality factor of solar cells under illumination}, journal = {Journal of Physics D: Applied Physics}, volume = {19}, year = {1986}, month = {Feb-03-1987}, pages = {483 - 492}, abstract = {A review of the methods of determination of solar cell quality factors is discussed from a theoretical point of view; experimental results are compared. Temperature effects, light and bias dependencies of the parameters and the models are considered in order to specify the limits of application of each method. }, issn = {0022-3727}, doi = {10.1088/0022-3727/19/3/018}, url = {https://iopscience.iop.org/article/10.1088/0022-3727/19/3/018http://stacks.iop.org/0022-3727/19/i=3/a=018/pdf}, author = {Mialhe, P and Charles, J P and Khoury, A and Bordure, G} } @article {Masetti1983, title = {Modeling of carrier mobility against carrier concentration in arsenic-, phosphorus-, and boron-doped silicon}, journal = {IEEE Transactions on Electron Devices}, volume = {ED-30}, number = {7}, year = {1983}, note = {

Copyright 1983, {IEE}

}, pages = {764{\textendash}9}, abstract = {

New carrier mobility data for both arsenic- and boron-doped silicon are presented in the high doping range. The data definitely show that the electron mobility in As-doped silicon is significantly lower than in P-doped silicon for carrier concentrations higher than 1019 cm-3. By integrating these data with those previously published, empirical relationships able to model the carrier mobility against carrier concentration in the whole experimental range examined to date (about eight decades in concentration) for As-, P-, and B-doped silicon are derived. Different parameters in the expression for the n-type dopants provide differentiation between the electron mobility in As- and P-doped silicon. Finally, it is shown that these new expressions, once implemented in the {SUPREM} {II} process simulator, lead to reduced errors in the simulation of the sheet resistance values

}, keywords = {arsenic, boron, CARRIER DENSITY, carrier mobility, digital simulation, elemental semiconductors, heavily doped semiconductors, phosphorus, SILICON}, issn = {0018-9383}, author = {G. Masetti and M. Severi and S. Solmi} } @booklet {Thurber1981, title = {The Relationship Between Resistivity and Dopant Density for Phosphorus- and Boron-Doped Silicon}, year = {1981}, note = {
}, publisher = {U.S. Department of Commerce National Bureau of Standards}, author = {W R Thurber and Mattis and Liu and Filliben} } @article {Thurber1980boron, title = {Resistivity-Dopant Density Relationship for Boron-Doped Silicon}, journal = {Journal of The Electrochemical Society}, volume = {127}, number = {10}, year = {1980}, note = {
}, pages = {2291-2294}, publisher = {ECS}, keywords = {boron, electrical resistivity, Hall effect, hole density, semiconductor doping, SILICON}, doi = {10.1149/1.2129394}, url = {http://link.aip.org/link/?JES/127/2291/1}, author = {W R Thurber and R. L. Mattis and Y. M. Liu and J. J. Filliben} } @article {Thurber1980phos, title = {Resistivity-Dopant Density Relationship for Phosphorus-Doped Silicon}, journal = {Journal of The Electrochemical Society}, volume = {127}, number = {8}, year = {1980}, pages = {1807-1812}, publisher = {ECS}, keywords = {density, electrical resistivity, electron mobility, Hall effect, neutron activation analysis, phosphorus, photometry, semiconductor doping, SILICON}, doi = {10.1149/1.2130006}, url = {http://link.aip.org/link/?JES/127/1807/1}, author = {W R Thurber and R. L. Mattis and Y. M. Liu and J. J. Filliben} } @article {Mack1979, title = {Solar Power for Telecommunications}, journal = {The Telecommunication Journal of Australia}, volume = {29}, year = {1979}, note = {
}, pages = {20-44}, author = {Mack, M.} } @book {Meinel1976, title = {Applied Solar Energy}, year = {1976}, note = {
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