Analytical approximation of effective surface recombination velocity of dielectric-passivated p-type silicon

Submitted by stuart on Tue, 03/12/2019 - 10:17

J. Brody and Rohatgi, A., “Analytical approximation of effective surface recombination velocity of dielectric-passivated p-type silicon”, Solid-State Electronics, vol. 45, no. 9, pp. 1549 - 1557, 2001.

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