Biblio

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A
K. Misiakos y Tsamakis, D., «Accurate measurements of the silicon intrinsic carrier density from 78 to 340 K», Journal of Applied Physics, vol. 74, n.º 5, p. 3293, 1993.
I
S. C. Baker-Finch, McIntosh, K. R., y Terry, M. L., «Isotextured Silicon Solar Cell Analysis and Modeling 1: Optics», IEEE Journal of Photovoltaics, vol. 2, n.º 4, pp. 457 - 464, 2012.
L
T. Tiedje, Yablonovich, E., Cody, G. D., y Brooks, B. G., «Limiting Efficiency of Silicon Solar Cells», IEEE TRANSACTIONS ON ELECTRON DEVICES, vol. ED-31, 1984.
P
T. Fuyuki, Kondo, H., Yamazaki, T., Takahashi, Y., y Uraoka, Y., «Photographic surveying of minority carrier diffusion length in polycrystalline silicon solar cells by electroluminescence», Applied Physics Letters, vol. 86, p. 262108, 2005.
R
W. R. Thurber, Mattis,, Liu,, y Filliben, «The Relationship Between Resistivity and Dopant Density for Phosphorus- and Boron-Doped Silicon». U.S. Department of Commerce National Bureau of Standards, 1981.
W. R. Thurber, Mattis, R. L., Liu, Y. M., y Filliben, J. J., «Resistivity-Dopant Density Relationship for Boron-Doped Silicon», Journal of The Electrochemical Society, vol. 127, pp. 2291-2294, 1980.
W. R. Thurber, Mattis, R. L., Liu, Y. M., y Filliben, J. J., «Resistivity-Dopant Density Relationship for Phosphorus-Doped Silicon», Journal of The Electrochemical Society, vol. 127, pp. 1807-1812, 1980.
T
F. C. Nix y Treptwo, A. W., «A Thallous Sulphide Photo EMF Cell», Journal Opt. Society of America, vol. 29, p. 457, 1939.
W
T. Takamoto et al., «World’s Highest Efficiency Triple-junction Solar Cells Fabricated by Inverted Layers Transfer Process», 35 IEEE Photovoltaic Specialist Conference. Honolulu HI, USA, 2010.
T. Takamoto et al., «World’s Highest Efficiency Triple-junction Solar Cells Fabricated by Inverted Layers Transfer Process», 35 IEEE Photovoltaic Specialist Conference. Honolulu HI, USA, 2010.