Submitted by drupal on Sat, 04/28/2012 - 22:47 W. D. Eades and Swanson, R. M., “Calculation of surface generation and recombination velocities at the Si-SiO2 interface”, Journal of Applied Physics, vol. 58, p. 4267, 1985. Log in or register to post comments DOI BibTeX RTF Tagged MARC EndNote XML RIS