Biblio

Export 162 results:
Author Title [ Type(Asc)] Year
Journal Article
S. M. Hanasoge, Duvall, T. L., and Sreenivasan, K. R., “From the Cover: Anomalously weak solar convection”, Proceedings of the National Academy of Sciences, vol. 109, no. 30, pp. 11928 - 11932, 2012.
J. R. G. Ross and Smokler, M. I., “Flat-Plate Solar Array Project Final Report”, pp. 86-31, 1986.
H. C. Card and Yang, E. S., “Electronic processes at grain boundaries in polycrystalline semiconductors under optical illumination”, IEEE Transactions on Electron Devices, vol. ED-24, pp. 397-402, 1977.
J. Henrie, Kellis, S., Schultz, S., and Hawkins, A., “Electronic color charts for dielectric films on silicon”, Optics Express, vol. 12, pp. 1464–1469, 2004.
R. N. Hall, “Electron-Hole Recombination in Germanium”, Phys. Rev., vol. 87, p. 387, 1952.
J. Czochralski, “Ein neues Verfahren zur Messung der Kristallisationsgeschwindigheit der Metalle”, Zeitschrift für physikalische Chemie, vol. 92, pp. 219–221, 1918.
M. Planck, “Distribution of energy in the spectrum”, Annalen der Physik, vol. 4, pp. 553-563, 1901.
M. Planck, “Distribution of energy in the normal spectrum”, Verhandlungen der Deutschen Physikalischen Gesellschaft, vol. 2, pp. 237-245, 1900.
A. B. Sproul, “Dimensionless solution of the equation describing the effect of surface recombination on carrier decay in semiconductors”, Journal of Applied Physics, vol. 76, pp. 2851-2854, 1994.
W. Shockley and Queisser, H. J., “Detailed Balance Limit of Efficiency of p-n Junction Solar Cells”, Journal of Applied Physics, vol. 32, pp. 510-519, 1961.
S. J. Robinson, Aberle, A. G., and Green, M. A., “Departures from the principle of superposition in silicon solar cells”, Journal of Applied Physics, vol. 76, p. 7920, 1994.
S. W. Glunz, Rein, S., Warta, W., Knobloch, J., and Wettling, W., “Degradation of carrier lifetime in Cz silicon solar cells”, Solar Energy Materials and Solar Cells, vol. 65, pp. 219 - 229, 2001.
P. A. Basore, “Defining terms for crystalline silicon solar cells”, Progress in Photovoltaics: Research and Applications, vol. 2, pp. 177-179, 1994.
J. Schmidt, Kerr, M. J., and Altermatt, P. P., “Coulomb-enhanced Auger recombination in crystalline silicon at intermediate and high injection densities”, Journal of Applied Physics, vol. 88, pp. 1494-1497, 2000.
L. O. Grondahl, “The Copper-Cuprous-Oxide Rectifier and Photoelectric Cell”, Review of Modern Physics, vol. 5, p. 141, 1933.
R. A. Sinton and Cuevas, A., “Contactless determination of current–voltage characteristics and minority-carrier lifetimes in semiconductors from quasi-steady-state photoconductance data”, Applied Physics Letters, vol. 69, pp. 2510-2512, 1996.
F. Braun, “On Conductance in Metal Sulphides”, Ann. d. Physik, vol. 153, p. 556, 1874.
M. Blanco-Muriel, Alarcón-Padilla, D. C., López-Moratalla, T., and Lara-Coira, M. Í., “Computing the solar vector”, Solar Energy, vol. 70, pp. 431 - 441, 2001.
J. E. Parrott, “Choice of an equivalent black body solar temperature”, Solar Energy, vol. 51, pp. 195 - 195, 1993.
W. D. Eades and Swanson, R. M., “Calculation of surface generation and recombination velocities at the Si-SiO2 interface”, Journal of Applied Physics, vol. 58, p. 4267, 1985.
D. Jordan and Nagle, J. P., “Buried contact concentrator solar cells”, Progress in Photovoltaics: Research and Applications, vol. 2, pp. 171-176, 1994.
S. Durand, “Attaining Thirty-Year Photovoltaic System Lifetime”, Progress in Photovoltaics: Research and Applications, 1994.
S. R. Wenham, Green, M. A., Watt, M. E., and Corkish, R., “Applied Photovoltaics”, p. 317, 2007.
F. A. Lindholm, Fossum, J. G., and Burgess, E. L., “Application of the superposition principle to solar-cell analysis”, IEEE Transactions on Electron Devices, vol. 26, pp. 165–171, 1979.
K. L. Luke and Cheng, L. - J., “Analysis of the interaction of a laser pulse with a silicon wafer: Determination of bulk lifetime and surface recombination velocity”, Journal of Applied Physics, vol. 61, pp. 2282-2293, 1987.

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