Biblio

Export 162 results:
Author Title [ Type(Asc)] Year
Journal Article
R. Perez, Ineichen, P., Seals, R., Michalsky, J., and Stewart, R., “Modeling daylight availability and irradiance components from direct and global irradiance”, Solar Energy, vol. 44, pp. 271 - 289, 1990.
C. H. Wang, Misiakos, K., and Neugroschel, A., “Minority-carrier transport parameters in n-type silicon”, IEEE Transactions on Electron Devices, vol. 37, pp. 1314 - 1322, 1990.
A. E. Becquerel, “Memoire sur les effects d´electriques produits sous l´influence des rayons solaires”, Annalen der Physick und Chemie, vol. 54, pp. 35-42, 1841.
E. G. Laue, “The measurement of solar spectral irradiance at different terrestrial elevations”, Solar Energy, vol. 13, pp. 43 - 50, IN1-IN4, 51-57, 1970.
F. M. Smits, “Measurement of sheet resistivities with the four-point probe”, Bell System Technical Journal, vol. 34, pp. 711-718, 1958.
T. Tiedje, Yablonovich, E., Cody, G. D., and Brooks, B. G., “Limiting Efficiency of Silicon Solar Cells”, IEEE TRANSACTIONS ON ELECTRON DEVICES, vol. ED-31, 1984.
R. S. Ohl, “Light-Sensitive Electric Device”, U.S. Patent, vol. 2, p. 402, 602, 1941.
P. Campbell and Green, M. A., “Light trapping properties of pyramidally textured surfaces”, Journal of Applied Physics, vol. 62, no. 1, p. 243, 1987.
S. C. Baker-Finch, McIntosh, K. R., and Terry, M. L., “Isotextured Silicon Solar Cell Analysis and Modeling 1: Optics”, IEEE Journal of Photovoltaics, vol. 2, no. 4, pp. 457 - 464, 2012.
E. Yablonovich and Cody, G. D., “Intensity Enhancement in Textured Optical Sheets for Solar Cells”, IEEE Transactions on Electron Devices, vol. ED-29, pp. 300-305, 1982.
P. P. Altermatt, Sinton, R. A., and Heiser, G., “Improvements in numerical modelling of highly injected crystalline silicon solar cells”, Solar Energy Materials and Solar Cells, vol. 65, pp. 149-155(7), 2001.
A. B. Sproul and Green, M. A., “Improved value for the silicon intrinsic carrier concentration from 275 to 375 K”, Journal of Applied Physics, vol. 70, p. 846, 1991.
A. B. Sproul and Green, M. A., “Improved value for the silicon intrinsic carrier concentration from 275 to 375 K”, Journal of Applied Physics, vol. 70, pp. 846-854, 1991.
A. B. Sproul, Green, M. A., and Zhao, J., “Improved value for the silicon intrinsic carrier concentration at 300 K”, Applied Physics Letters, vol. 57, p. 255, 1990.
A. Richter, Glunz, S. W., Werner, F., Schmidt, J., and Cuevas, A., “Improved quantitative description of Auger recombination in crystalline silicon”, Physical Review B, vol. 86, no. 16, 2012.
P. Campbell and Green, M. A., “High performance light trapping textures for monocrystalline silicon solar cells”, Solar Energy Materials and Solar Cells, vol. 65, no. 1-4, pp. 369 - 375, 2001.
M. Aven, “High Electron Mobility in Zinc Selenide Through Low-Temperature Annealing”, Journal of Applied Physics, vol. 42, no. 3, p. 1204, 1971.
A. Luque and Hegedus, S., “Handbook of Photovoltaic Science and Engineering”, p. 1117, 2003.
J. Hansen, “Global temperature change”, Proceedings of the National Academy of Sciences, vol. 103, pp. 14288 - 14293, 2006.
NASA, “GISS Surface Temperature Analysis”, 2010.
A. Einstein, “Generation and transformation of light”, Annalen der Physik, vol. 17, 1905.
M. J. Kerr, Cuevas, A., and Sinton, R. A., “Generalized analysis of quasi-steady-state and transient decay open circuit voltage measurements”, Journal of Applied Physics, vol. 91, p. 399, 2002.
H. Nagel, Berge, C., and Aberle, A. G., “Generalized analysis of quasi-steady-state and quasi-transient measurements of carrier lifetimes in semiconductors”, Journal of Applied Physics, vol. 86, pp. 6218-6221, 1999.
M. J. Kerr and Cuevas, A., “General parameterization of Auger recombination in crystalline silicon”, Journal of Applied Physics, vol. 91, pp. 2473-2480, 2002.
K. Bothe, Sinton, R., and Schmidt, J., “Fundamental boron-oxygen-related carrier lifetime limit in mono- and multicrystalline silicon”, Progress in Photovoltaics: Research and Applications, vol. 13, pp. 287 - 296, 2005.

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