Biblio

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Miscellaneous
W. R. Thurber, Mattis,, Liu,, and Filliben, “The Relationship Between Resistivity and Dopant Density for Phosphorus- and Boron-Doped Silicon”. U.S. Department of Commerce National Bureau of Standards, 1981.
Journal Article
F. C. Nix and Treptwo, A. W., “A Thallous Sulphide Photo EMF Cell”, Journal Opt. Society of America, vol. 29, p. 457, 1939.
W. R. Thurber, Mattis, R. L., Liu, Y. M., and Filliben, J. J., “Resistivity-Dopant Density Relationship for Phosphorus-Doped Silicon”, Journal of The Electrochemical Society, vol. 127, pp. 1807-1812, 1980.
W. R. Thurber, Mattis, R. L., Liu, Y. M., and Filliben, J. J., “Resistivity-Dopant Density Relationship for Boron-Doped Silicon”, Journal of The Electrochemical Society, vol. 127, pp. 2291-2294, 1980.
T. Fuyuki, Kondo, H., Yamazaki, T., Takahashi, Y., and Uraoka, Y., “Photographic surveying of minority carrier diffusion length in polycrystalline silicon solar cells by electroluminescence”, Applied Physics Letters, vol. 86, p. 262108, 2005.
T. Tiedje, Yablonovich, E., Cody, G. D., and Brooks, B. G., “Limiting Efficiency of Silicon Solar Cells”, IEEE TRANSACTIONS ON ELECTRON DEVICES, vol. ED-31, 1984.
S. C. Baker-Finch, McIntosh, K. R., and Terry, M. L., “Isotextured Silicon Solar Cell Analysis and Modeling 1: Optics”, IEEE Journal of Photovoltaics, vol. 2, no. 4, pp. 457 - 464, 2012.
K. Misiakos and Tsamakis, D., “Accurate measurements of the silicon intrinsic carrier density from 78 to 340 K”, Journal of Applied Physics, vol. 74, no. 5, p. 3293, 1993.
Conference Proceedings
T. Takamoto et al., “World’s Highest Efficiency Triple-junction Solar Cells Fabricated by Inverted Layers Transfer Process”, 35 IEEE Photovoltaic Specialist Conference. Honolulu HI, USA, 2010.
T. Takamoto et al., “World’s Highest Efficiency Triple-junction Solar Cells Fabricated by Inverted Layers Transfer Process”, 35 IEEE Photovoltaic Specialist Conference. Honolulu HI, USA, 2010.