@article {533, title = {Isotextured Silicon Solar Cell Analysis and Modeling 1: Optics}, journal = {IEEE Journal of Photovoltaics}, volume = {2}, year = {2012}, month = {Jan-10-2012}, pages = {457 - 464}, issn = {2156-3381}, doi = {10.1109/JPHOTOV.2012.2206569}, author = {Baker-Finch, Simeon C. and McIntosh, Keith R. and Terry, Mason L.} } @proceedings {Takamoto2010, title = {World{\textquoteright}s Highest Efficiency Triple-junction Solar Cells Fabricated by Inverted Layers Transfer Process}, year = {2010}, note = {
}, address = {Honolulu HI, USA}, author = {Takamoto, T. and Agui, T. and Yoshida, A. and Nakaido, K. and Juso, H. and Sasaki, K. and Nakamura, K. and Yamaguchi, H. and Kodama, T. and Washio, H. and Imazumi, M. and Takahashi, M.} } @article {Fuyuki2005, title = {Photographic surveying of minority carrier diffusion length in polycrystalline silicon solar cells by electroluminescence}, journal = {Applied Physics Letters}, volume = {86}, number = {26}, year = {2005}, pages = {262108}, publisher = {AIP}, keywords = {carrier lifetime, electroluminescence, elemental semiconductors, MINORITY CARRIERS, SILICON, solar cells}, doi = {10.1063/1.1978979}, url = {http://link.aip.org/link/?APL/86/262108/1}, author = {Takashi Fuyuki and Hayato Kondo and Tsutomu Yamazaki and Yu Takahashi and Yukiharu Uraoka} } @article {Misiakos93, title = {Accurate measurements of the silicon intrinsic carrier density from 78 to 340 K}, journal = {Journal of Applied Physics}, volume = {74}, year = {1993}, month = {Jan-01-1993}, pages = {3293}, abstract = {The intrinsic carrier density in silicon has been measured by a novel technique based on low-frequency capacitance measurements of a p+-i-n+ diode biased in high injection. The major advantage of the method is its insensitivity to uncertainties regarding the exact values of the carrier mobilities, the recombination parameters, and the doping density. The intrinsic carrier density was measured in the temperature range from 78 to 340 K. At 300 K the value of ni was found to be (9.7{\textpm}0.1){\texttimes}10^9 cm-3.}, issn = {00218979}, doi = {10.1063/1.354551}, author = {Misiakos, Konstantinos and Tsamakis, Dimitris} } @article {Tiedje1984, title = {Limiting Efficiency of Silicon Solar Cells}, journal = {IEEE TRANSACTIONS ON ELECTRON DEVICES}, volume = {ED-31}, year = {1984}, note = {
}, month = {05/1984}, author = {T. Tiedje and E Yablonovich and G.D. Cody and B.G. Brooks} } @booklet {Thurber1981, title = {The Relationship Between Resistivity and Dopant Density for Phosphorus- and Boron-Doped Silicon}, year = {1981}, note = {
}, publisher = {U.S. Department of Commerce National Bureau of Standards}, author = {W R Thurber and Mattis and Liu and Filliben} } @article {Thurber1980boron, title = {Resistivity-Dopant Density Relationship for Boron-Doped Silicon}, journal = {Journal of The Electrochemical Society}, volume = {127}, number = {10}, year = {1980}, note = {
}, pages = {2291-2294}, publisher = {ECS}, keywords = {boron, electrical resistivity, Hall effect, hole density, semiconductor doping, SILICON}, doi = {10.1149/1.2129394}, url = {http://link.aip.org/link/?JES/127/2291/1}, author = {W R Thurber and R. L. Mattis and Y. M. Liu and J. J. Filliben} } @article {Thurber1980phos, title = {Resistivity-Dopant Density Relationship for Phosphorus-Doped Silicon}, journal = {Journal of The Electrochemical Society}, volume = {127}, number = {8}, year = {1980}, pages = {1807-1812}, publisher = {ECS}, keywords = {density, electrical resistivity, electron mobility, Hall effect, neutron activation analysis, phosphorus, photometry, semiconductor doping, SILICON}, doi = {10.1149/1.2130006}, url = {http://link.aip.org/link/?JES/127/1807/1}, author = {W R Thurber and R. L. Mattis and Y. M. Liu and J. J. Filliben} } @article {Nix1939, title = {A Thallous Sulphide Photo EMF Cell}, journal = {Journal Opt. Society of America}, volume = {29}, year = {1939}, note = {
}, pages = {457}, author = {Nix, F.C. and Treptwo, A.W.} }