Biblio

Export 162 results:
Author [ Title(Asc)] Type Year
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N
W. Keogh and Blakers, A. W., “Natural Sunlight Calibration of Silicon Solar Cells.”, 17th European Photovoltaic Solar Energy Conference. Munich, Germany, 2001.
M
G. Masetti, Severi, M., and Solmi, S., “Modeling of carrier mobility against carrier concentration in arsenic-, phosphorus-, and boron-doped silicon”, IEEE Transactions on Electron Devices, vol. ED-30, pp. 764–9, 1983.
R. Perez, Ineichen, P., Seals, R., Michalsky, J., and Stewart, R., “Modeling daylight availability and irradiance components from direct and global irradiance”, Solar Energy, vol. 44, pp. 271 - 289, 1990.
R. Perez, Ineichen, P., Seals, R., Michalsky, J., and Stewart, R., “Modeling daylight availability and irradiance components from direct and global irradiance”, Solar Energy, vol. 44, pp. 271–289, 1990.
C. H. Wang, Misiakos, K., and Neugroschel, A., “Minority-carrier transport parameters in n-type silicon”, IEEE Transactions on Electron Devices, vol. 37, pp. 1314 - 1322, 1990.
F. Dimroth et al., “METAMORPHIC GaInP/GaInAs/Ge TRIPLE-JUNCTION SOLAR CELLS WITH > 41 % EFFICIENCY”, 34th IEEE Photovoltaic Specialists Conference. 2009.
A. E. Becquerel, “Memoire sur les effects d´electriques produits sous l´influence des rayons solaires”, Annalen der Physick und Chemie, vol. 54, pp. 35-42, 1841.
E. G. Laue, “The measurement of solar spectral irradiance at different terrestrial elevations”, Solar Energy, vol. 13, pp. 43 - 50, IN1-IN4, 51-57, 1970.
F. M. Smits, “Measurement of sheet resistivities with the four-point probe”, Bell System Technical Journal, vol. 34, pp. 711-718, 1958.
A. S. H. van der Heide and et al, “Mapping of contact resistance and locating shunts on solar cells using Resistance Analysis by Mapping of Potential (RAMP) techniques”, 16th European Photovoltaic Solar Energy Conference. Glasgow (United Kingdom), p. 1438, 2000.
L
J. Szlufcik, Sivoththaman, S., Nlis, J. F., Mertens, R. P., and Van-Overstraeten, R., “Low-cost industrial technologies of crystalline silicon solar cells”, Proceedings-of-the-IEEE, vol. 85. pp. 711-730, 1997.
G. Bunea, Wilson, K., Meydbray, Y., Campbell, M., and Ceuster, D. D., “Low Light Performance of Mono-Crystalline Silicon Solar Cells”, in 4th World Conference on Photovoltaic Energy Conference, Waikoloa, HI, 2006, pp. 1312–1314.
D. De Ceuster, Cousins, P., Rose, D., Cudzinovic, M., and Mulligan, W., “Low Cost, High Volume Production of >22% Efficiency Silicon Solar Cells”, 22nd European Photovoltaic Specialist Conference. 2007.
T. Tiedje, Yablonovich, E., Cody, G. D., and Brooks, B. G., “Limiting Efficiency of Silicon Solar Cells”, IEEE TRANSACTIONS ON ELECTRON DEVICES, vol. ED-31, 1984.
R. S. Ohl, “Light-Sensitive Electric Device”, U.S. Patent, vol. 2, p. 402, 602, 1941.
P. Campbell and Green, M. A., “Light trapping properties of pyramidally textured surfaces”, Journal of Applied Physics, vol. 62, no. 1, p. 243, 1987.
I
R. Einhaus, Vazsonyi, E., Szlufcik, J., Nijs, J., and Mertens, R., “Isotropic texturing of multicrystalline silicon wafers with acidic texturing solutions”, Twenty Sixth IEEE Photovoltaic Specialists Conference. New York, NY, USA, pp. 167-170, 1451, 1997.
S. C. Baker-Finch, McIntosh, K. R., and Terry, M. L., “Isotextured Silicon Solar Cell Analysis and Modeling 1: Optics”, IEEE Journal of Photovoltaics, vol. 2, no. 4, pp. 457 - 464, 2012.
E. Yablonovich and Cody, G. D., “Intensity Enhancement in Textured Optical Sheets for Solar Cells”, IEEE Transactions on Electron Devices, vol. ED-29, pp. 300-305, 1982.
K. R. McIntosh and Honsberg, C. B., “The Influence of Edge Recombination on a Solar Cell’s IV Curve”, 16th European Photovoltaic Solar Energy Conference. 2000.
J. Zhao, A., W., Dai, X., Green, M. A., and Wenham, S. R., “Improvements in Silicon Solar Cell Performance”, 22nd IEEE PV Specialists Conference. pp. 399-402, 1991.
P. P. Altermatt, Sinton, R. A., and Heiser, G., “Improvements in numerical modelling of highly injected crystalline silicon solar cells”, Solar Energy Materials and Solar Cells, vol. 65, pp. 149-155(7), 2001.
A. B. Sproul and Green, M. A., “Improved value for the silicon intrinsic carrier concentration from 275 to 375 K”, Journal of Applied Physics, vol. 70, pp. 846-854, 1991.
A. B. Sproul and Green, M. A., “Improved value for the silicon intrinsic carrier concentration from 275 to 375 K”, Journal of Applied Physics, vol. 70, p. 846, 1991.
A. B. Sproul, Green, M. A., and Zhao, J., “Improved value for the silicon intrinsic carrier concentration at 300 K”, Applied Physics Letters, vol. 57, p. 255, 1990.

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