Biblio

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J. Schmidt, Kerr, M. J., 와/과 Altermatt, P. P., Coulomb-enhanced Auger recombination in crystalline silicon at intermediate and high injection densities, Journal of Applied Physics, vol 88, pp 1494-1497, 2000.
D. Schroder, Semiconductor material and device characterization, 3rd editionrd ed. Piscataway NJ; Hoboken N.J.: IEEE Press; Wiley, 2006.
R. Sekuler 와/과 Blake, R., Perception. New York: Alfred A. Knopf Inc, 1985.
SERI, Photovoltaics for Residential Applications. Golden, Colorado: Solar Energy Research Institute, 1984.
H. B. Serreze, Optimizing Solar Cell Performance by Simultaneous Consideration of Grid Pattern Design and Interconnect Configurations, 13th IEEE Photovoltaic Specialists Conference. Washington, D.C., USA, pp 1-8, 1978.
J. N. Shive, Semiconductor Devices, Chapter 8, New Jersey: Van Nostrand, 1959.
W. Shockley 와/과 Queisser, H. J., Detailed Balance Limit of Efficiency of p-n Junction Solar Cells, Journal of Applied Physics, vol 32, pp 510-519, 1961.
W. Shockley 와/과 Read, W. T., Statistics of the Recombinations of Holes and Electrons, Physical Review, vol 87, p 835, 1952.
W. Shockley, Electrons and holes in semiconductors with applications to transistor electronics. New York: van Nostrand, 1950.
R. A. Sinton 와/과 Cuevas, A., Contactless determination of current–voltage characteristics and minority-carrier lifetimes in semiconductors from quasi-steady-state photoconductance data, Applied Physics Letters, vol 69, pp 2510-2512, 1996.
R. A. Sinton 와/과 Cuevas, A., A Quasi-Steady-State Open-Circuit Voltage Method for Solar Cell Characterization, in 16th European Photovoltaic Solar Energy Conference, Glasgow, Scotland, 2000, pp 1152–1155.
R. A. Sinton 와/과 Swanson, R. M., Recombination in highly injected silicon, Electron Devices, IEEE Transactions on, vol 34, pp 1380 - 1389, 1987.
F. M. Smits, Measurement of sheet resistivities with the four-point probe, Bell System Technical Journal, vol 34, pp 711-718, 1958.
A. B. Sproul 와/과 Green, M. A., Improved value for the silicon intrinsic carrier concentration from 275 to 375 K, Journal of Applied Physics, vol 70, pp 846-854, 1991.
A. B. Sproul, Dimensionless solution of the equation describing the effect of surface recombination on carrier decay in semiconductors, Journal of Applied Physics, vol 76, pp 2851-2854, 1994.
A. B. Sproul 와/과 Green, M. A., Improved value for the silicon intrinsic carrier concentration from 275 to 375 K, Journal of Applied Physics, vol 70, p 846, 1991.
A. B. Sproul, Green, M. A., 와/과 Zhao, J., Improved value for the silicon intrinsic carrier concentration at 300 K, Applied Physics Letters, vol 57, p 255, 1990.
M. J. Stocks, Carr, A. J., 와/과 Blakers, A. W., Texturing of polycrystalline silicon, Solar Energy Materials and Solar Cells, vol 40, pp 33 - 42, 1996.
B. G. Streetman, Solid State Electronic Devices. Prentice Hall, 2000.
R. M. Swanson, Approaching the 29% limit efficiency of silicon solar cells, Thirty-First IEEE Photovoltaic Specialists Conference. 01/2005, Lake buena Vista, FL, USA, pp 889-94, 2005.
J. Szlufcik, Sivoththaman, S., Nlis, J. F., Mertens, R. P., 와/과 Van-Overstraeten, R., Low-cost industrial technologies of crystalline silicon solar cells, Proceedings-of-the-IEEE, vol 85. pp 711-730, 1997.