Improved value for the silicon intrinsic carrier concentration from 275 to 375 K

Submitted by drupal on Sat, 04/28/2012 - 22:47

A. B. Sproul 와/과 Green, M. A., “Improved value for the silicon intrinsic carrier concentration from 275 to 375 K”, Journal of Applied Physics, vol 70, p 846, 1991.

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