Improved value for the silicon intrinsic carrier concentration at 300 K

Submitted by drupal on Sat, 04/28/2012 - 22:47

A. B. Sproul, Green, M. A., 와/과 Zhao, J., “Improved value for the silicon intrinsic carrier concentration at 300 K”, Applied Physics Letters, vol 57, p 255, 1990.

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