Basic Equations
Density of States in Conduction and Valence Band

Fermi function:

Carrier Concentration in Equilibrium
![]()
![]()
Law of mass action:
![]()
Carrier concentrations:
n-type material:

p-type material:

Carrier Concentration Under Bias
![]()
Generation
Number of photons:
![]()
Generation rate:
![]()
Generation, homogeneous semiconductor: G = const:
P-type:
![]()
N-type:
![]()
Recombination
General SRH recombination rate:

Under low injection conditions:
For electrons:
![]()
For holes:

![]()
Basic PN Junction Equation Set
1. Poisson's equaion:
![]()
2. Transport equations:
![]()
3. Continuity equations:

General solution for no electric eifled, constant generation
![]()
Equations for PN Junctions
Built-in voltage pn homojunction:

General ideal diode equation:
![]()
I0 for wide base diode:

I0 for narrow base diode:

Full diode saturation currrent equation:



Depletion region recombination:
![]()

Solar Cell Equations
![]()

for constant G, wide base

Material Constants and Commont Units
Intrinsic carrier concentration:
![]()
Effective density of states:

Intrinsic energy level:

Diffusivity

Minority carrier diffusion length:
![]()
Resistivity and conductivity:

Resistance, homogeneous:
![]()
Permittivity:
![]()
Radiant Energy
Wavelength and energy of a photon:
![]()
If E is in eV and λ is in μm:
![]()
Spectral irradiance for black body:

Power density of a non-ideal black body:
![]()
Photon flux and power density:

| Material | mn*/m0 | mp*/m0 | EG (eV) | ni (cm-3) | c (eV) | eS |
| Si | 1.18 | 0.81 | 1.12 | 1.0 × 1010 | 4.03 | 11.8 |
| Ge | 0.55 | 0.36 | 0.66 | 2.0 × 1013 | 4.13 | 16.0 |
| GaAs | 0.066 | 0.52 | 1.42 | 1.8 × 106 | 4.07 | 13.1 |
| InP | 0.08 | 0.6 | 1.34 | 1.3 × 107 | 4.38 | 12.5 |
