Basic Equations
Density of States in Conduction and Valence Band
Fermi function:
Carrier Concentration in Equilibrium
Law of mass action:
Carrier concentrations:
n-type material:
p-type material:
Carrier Concentration Under Bias
Generation
Number of photons:
Generation rate:
Generation, homogeneous semiconductor: G = const:
P-type:
N-type:
Recombination
General SRH recombination rate:
Under low injection conditions:
For electrons:
For holes:
Basic PN Junction Equation Set
1. Poisson's equaion:
2. Transport equations:
3. Continuity equations:
General solution for no electric eifled, constant generation
Equations for PN Junctions
Built-in voltage pn homojunction:
General ideal diode equation:
I0 for wide base diode:
I0 for narrow base diode:
Full diode saturation currrent equation:
Depletion region recombination:
Solar Cell Equations
for constant G, wide base
Material Constants and Commont Units
Intrinsic carrier concentration:
Effective density of states:
Intrinsic energy level:
Diffusivity
Minority carrier diffusion length:
Resistivity and conductivity:
Resistance, homogeneous:
Permittivity:
Radiant Energy
Wavelength and energy of a photon:
If E is in eV and λ is in μm:
Spectral irradiance for black body:
Power density of a non-ideal black body:
Photon flux and power density:
Material | mn*/m0 | mp*/m0 | EG (eV) | ni (cm-3) | c (eV) | eS |
Si | 1.18 | 0.81 | 1.12 | 1.0 × 1010 | 4.03 | 11.8 |
Ge | 0.55 | 0.36 | 0.66 | 2.0 × 1013 | 4.13 | 16.0 |
GaAs | 0.066 | 0.52 | 1.42 | 1.8 × 106 | 4.07 | 13.1 |
InP | 0.08 | 0.6 | 1.34 | 1.3 × 107 | 4.38 | 12.5 |