Biblio

Export 162 results:
Author Title [ Type(Desc)] Year
Journal Article
S. W. Glunz, Rein, S., Warta, W., Knobloch, J., 와/과 Wettling, W., “Degradation of carrier lifetime in Cz silicon solar cells”, Solar Energy Materials and Solar Cells, vol 65, pp 219 - 229, 2001.
S. J. Robinson, Aberle, A. G., 와/과 Green, M. A., “Departures from the principle of superposition in silicon solar cells”, Journal of Applied Physics, vol 76, p 7920, 1994.
W. Shockley 와/과 Queisser, H. J., “Detailed Balance Limit of Efficiency of p-n Junction Solar Cells”, Journal of Applied Physics, vol 32, pp 510-519, 1961.
A. B. Sproul, “Dimensionless solution of the equation describing the effect of surface recombination on carrier decay in semiconductors”, Journal of Applied Physics, vol 76, pp 2851-2854, 1994.
M. Planck, “Distribution of energy in the normal spectrum”, Verhandlungen der Deutschen Physikalischen Gesellschaft, vol 2, pp 237-245, 1900.
M. Planck, “Distribution of energy in the spectrum”, Annalen der Physik, vol 4, pp 553-563, 1901.
J. Czochralski, “Ein neues Verfahren zur Messung der Kristallisationsgeschwindigheit der Metalle”, Zeitschrift für physikalische Chemie, vol 92, pp 219–221, 1918.
R. N. Hall, “Electron-Hole Recombination in Germanium”, Phys. Rev., vol 87, p 387, 1952.
J. Henrie, Kellis, S., Schultz, S., 와/과 Hawkins, A., “Electronic color charts for dielectric films on silicon”, Optics Express, vol 12, pp 1464–1469, 2004.
H. C. Card 와/과 Yang, E. S., “Electronic processes at grain boundaries in polycrystalline semiconductors under optical illumination”, IEEE Transactions on Electron Devices, vol ED-24, pp 397-402, 1977.
J. R. G. Ross 와/과 Smokler, M. I., “Flat-Plate Solar Array Project Final Report”, pp 86-31, 1986.
S. M. Hanasoge, Duvall, T. L., 와/과 Sreenivasan, K. R., “From the Cover: Anomalously weak solar convection”, Proceedings of the National Academy of Sciences, vol 109, 호 30, pp 11928 - 11932, 2012.
K. Bothe, Sinton, R., 와/과 Schmidt, J., “Fundamental boron-oxygen-related carrier lifetime limit in mono- and multicrystalline silicon”, Progress in Photovoltaics: Research and Applications, vol 13, pp 287 - 296, 2005.
M. J. Kerr 와/과 Cuevas, A., “General parameterization of Auger recombination in crystalline silicon”, Journal of Applied Physics, vol 91, pp 2473-2480, 2002.
H. Nagel, Berge, C., 와/과 Aberle, A. G., “Generalized analysis of quasi-steady-state and quasi-transient measurements of carrier lifetimes in semiconductors”, Journal of Applied Physics, vol 86, pp 6218-6221, 1999.
M. J. Kerr, Cuevas, A., 와/과 Sinton, R. A., “Generalized analysis of quasi-steady-state and transient decay open circuit voltage measurements”, Journal of Applied Physics, vol 91, p 399, 2002.
A. Einstein, “Generation and transformation of light”, Annalen der Physik, vol 17, 1905.
NASA, “GISS Surface Temperature Analysis”, 2010.
J. Hansen, “Global temperature change”, Proceedings of the National Academy of Sciences, vol 103, pp 14288 - 14293, 2006.
A. Luque 와/과 Hegedus, S., “Handbook of Photovoltaic Science and Engineering”, p 1117, 2003.
M. Aven, “High Electron Mobility in Zinc Selenide Through Low-Temperature Annealing”, Journal of Applied Physics, vol 42, 호 3, p 1204, 1971.
P. Campbell 와/과 Green, M. A., “High performance light trapping textures for monocrystalline silicon solar cells”, Solar Energy Materials and Solar Cells, vol 65, 호 1-4, pp 369 - 375, 2001.
A. Richter, Glunz, S. W., Werner, F., Schmidt, J., 와/과 Cuevas, A., “Improved quantitative description of Auger recombination in crystalline silicon”, Physical Review B, vol 86, 호 16, 2012.
A. B. Sproul, Green, M. A., 와/과 Zhao, J., “Improved value for the silicon intrinsic carrier concentration at 300 K”, Applied Physics Letters, vol 57, p 255, 1990.
A. B. Sproul 와/과 Green, M. A., “Improved value for the silicon intrinsic carrier concentration from 275 to 375 K”, Journal of Applied Physics, vol 70, pp 846-854, 1991.

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