Biblio

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T. Tiedje, Yablonovich, E., Cody, G. D., и Brooks, B. G., «Limiting Efficiency of Silicon Solar Cells», IEEE TRANSACTIONS ON ELECTRON DEVICES, т. ED-31, 1984.
W. R. Thurber, Mattis,, Liu,, и Filliben, «The Relationship Between Resistivity and Dopant Density for Phosphorus- and Boron-Doped Silicon». U.S. Department of Commerce National Bureau of Standards, 1981.
W. R. Thurber, Mattis, R. L., Liu, Y. M., и Filliben, J. J., «Resistivity-Dopant Density Relationship for Boron-Doped Silicon», Journal of The Electrochemical Society, т. 127, с. 2291-2294, 1980.
W. R. Thurber, Mattis, R. L., Liu, Y. M., и Filliben, J. J., «Resistivity-Dopant Density Relationship for Phosphorus-Doped Silicon», Journal of The Electrochemical Society, т. 127, с. 1807-1812, 1980.
T. Takamoto и др., «World’s Highest Efficiency Triple-junction Solar Cells Fabricated by Inverted Layers Transfer Process», 35 IEEE Photovoltaic Specialist Conference. Honolulu HI, USA, 2010.