%0 Journal Article %J IEEE Journal of Photovoltaics %D 2012 %T Isotextured Silicon Solar Cell Analysis and Modeling 1: Optics %A Baker-Finch, Simeon C. %A McIntosh, Keith R. %A Terry, Mason L. %B IEEE Journal of Photovoltaics %V 2 %P 457 - 464 %8 Jan-10-2012 %G eng %N 4 %! IEEE J. Photovoltaics %R 10.1109/JPHOTOV.2012.2206569 %0 Conference Proceedings %B 35 IEEE Photovoltaic Specialist Conference %D 2010 %T World’s Highest Efficiency Triple-junction Solar Cells Fabricated by Inverted Layers Transfer Process %A Takamoto, T. %A Agui, T. %A Yoshida, A. %A Nakaido, K. %A Juso, H. %A Sasaki, K. %A Nakamura, K. %A Yamaguchi, H. %A Kodama, T. %A Washio, H. %A Imazumi, M. %A Takahashi, M. %B 35 IEEE Photovoltaic Specialist Conference %C Honolulu HI, USA %G eng %0 Journal Article %J Applied Physics Letters %D 2005 %T Photographic surveying of minority carrier diffusion length in polycrystalline silicon solar cells by electroluminescence %A Takashi Fuyuki %A Hayato Kondo %A Tsutomu Yamazaki %A Yu Takahashi %A Yukiharu Uraoka %K carrier lifetime %K electroluminescence %K elemental semiconductors %K MINORITY CARRIERS %K SILICON %K solar cells %B Applied Physics Letters %I AIP %V 86 %P 262108 %G eng %U http://link.aip.org/link/?APL/86/262108/1 %R 10.1063/1.1978979 %0 Journal Article %J Journal of Applied Physics %D 1993 %T Accurate measurements of the silicon intrinsic carrier density from 78 to 340 K %A Misiakos, Konstantinos %A Tsamakis, Dimitris %X The intrinsic carrier density in silicon has been measured by a novel technique based on low‐frequency capacitance measurements of a p+‐i‐n+ diode biased in high injection. The major advantage of the method is its insensitivity to uncertainties regarding the exact values of the carrier mobilities, the recombination parameters, and the doping density. The intrinsic carrier density was measured in the temperature range from 78 to 340 K. At 300 K the value of ni was found to be (9.7±0.1)×10^9 cm−3. %B Journal of Applied Physics %V 74 %P 3293 %8 Jan-01-1993 %G eng %N 5 %! J. Appl. Phys. %R 10.1063/1.354551 %0 Journal Article %J IEEE TRANSACTIONS ON ELECTRON DEVICES %D 1984 %T Limiting Efficiency of Silicon Solar Cells %A T. Tiedje %A E Yablonovich %A G.D. Cody %A B.G. Brooks %B IEEE TRANSACTIONS ON ELECTRON DEVICES %V ED-31 %8 05/1984 %G eng %0 Generic %D 1981 %T The Relationship Between Resistivity and Dopant Density for Phosphorus- and Boron-Doped Silicon %A W R Thurber %A Mattis %A Liu %A Filliben %I U.S. Department of Commerce National Bureau of Standards %G eng %0 Journal Article %J Journal of The Electrochemical Society %D 1980 %T Resistivity-Dopant Density Relationship for Boron-Doped Silicon %A W R Thurber %A R. L. Mattis %A Y. M. Liu %A J. J. Filliben %K boron %K electrical resistivity %K Hall effect %K hole density %K semiconductor doping %K SILICON %B Journal of The Electrochemical Society %I ECS %V 127 %P 2291-2294 %G eng %U http://link.aip.org/link/?JES/127/2291/1 %R 10.1149/1.2129394 %0 Journal Article %J Journal of The Electrochemical Society %D 1980 %T Resistivity-Dopant Density Relationship for Phosphorus-Doped Silicon %A W R Thurber %A R. L. Mattis %A Y. M. Liu %A J. J. Filliben %K density %K electrical resistivity %K electron mobility %K Hall effect %K neutron activation analysis %K phosphorus %K photometry %K semiconductor doping %K SILICON %B Journal of The Electrochemical Society %I ECS %V 127 %P 1807-1812 %G eng %U http://link.aip.org/link/?JES/127/1807/1 %R 10.1149/1.2130006 %0 Journal Article %J Journal Opt. Society of America %D 1939 %T A Thallous Sulphide Photo EMF Cell %A Nix, F.C. %A Treptwo, A.W. %B Journal Opt. Society of America %V 29 %P 457 %G eng