Biblio

Export 162 results:
Author [ Title(Asc)] Type Year
A B C D E F G H I J K L M N O P Q R S T U V W X Y Z 
I
A. Richter, Glunz, S. W., Werner, F., Schmidt, J., и Cuevas, A., «Improved quantitative description of Auger recombination in crystalline silicon», Physical Review B, т. 86, № 16, 2012.
D. S. Ruby, Yang, P., Zaidi, S., Brueck, S., Roy, M., и Narayanan, S., «Improved Performance of Self-Aligned, Selective-Emitter Silicon Solar Cells», 2nd World Conference and Exhibition on Photovoltaic Solar Energy Conversion. Vienna, Austria, 1998.
H
M. Wolf, «Historical Development of Solar Cells». IEEE Press, 1976.
P. Campbell и Green, M. A., «High performance light trapping textures for monocrystalline silicon solar cells», Solar Energy Materials and Solar Cells, т. 65, № 1-4, с. 369 - 375, 2001.
M. Aven, «High Electron Mobility in Zinc Selenide Through Low-Temperature Annealing», Journal of Applied Physics, т. 42, № 3, с. 1204, 1971.
B. Dale и Rudenberg, H. G., «High efficiency silicon solar cells», в Proceedings of the 14th Annual Power Sources Conference, 1960, с. 22.
A. Luque и Hegedus, S., «Handbook of Photovoltaic Science and Engineering», с. 1117, 2003.
G
J. Hansen, «Global temperature change», Proceedings of the National Academy of Sciences, т. 103, с. 14288 - 14293, 2006.
NASA, «GISS Surface Temperature Analysis», 2010.
A. Einstein, «Generation and transformation of light», Annalen der Physik, т. 17, 1905.
M. J. Kerr, Cuevas, A., и Sinton, R. A., «Generalized analysis of quasi-steady-state and transient decay open circuit voltage measurements», Journal of Applied Physics, т. 91, с. 399, 2002.
H. Nagel, Berge, C., и Aberle, A. G., «Generalized analysis of quasi-steady-state and quasi-transient measurements of carrier lifetimes in semiconductors», Journal of Applied Physics, т. 86, с. 6218-6221, 1999.
M. J. Kerr и Cuevas, A., «General parameterization of Auger recombination in crystalline silicon», Journal of Applied Physics, т. 91, с. 2473-2480, 2002.
P. J. Cousins и др., «Gen III: Improved Performance at Lower Cost», в 35th IEEE Photovoltaic Specialists Conference, Honolulu, Hawaii, 2010.
F
K. Bothe, Sinton, R., и Schmidt, J., «Fundamental boron-oxygen-related carrier lifetime limit in mono- and multicrystalline silicon», Progress in Photovoltaics: Research and Applications, т. 13, с. 287 - 296, 2005.
S. M. Hanasoge, Duvall, T. L., и Sreenivasan, K. R., «From the Cover: Anomalously weak solar convection», Proceedings of the National Academy of Sciences, т. 109, № 30, с. 11928 - 11932, 2012.
J. R. G. Ross и Smokler, M. I., «Flat-Plate Solar Array Project Final Report», с. 86-31, 1986.
R. G. Ross, «Flat-Plate Photovoltaic Array Design Optimization», 14th IEEE Photovoltaic Specialists Conference. San Diego, CA, с. 1126-1132, 1980.
E
W. Shockley, Electrons and holes in semiconductors with applications to transistor electronics. New York: van Nostrand, 1950.
H. C. Card и Yang, E. S., «Electronic processes at grain boundaries in polycrystalline semiconductors under optical illumination», IEEE Transactions on Electron Devices, т. ED-24, с. 397-402, 1977.
J. Henrie, Kellis, S., Schultz, S., и Hawkins, A., «Electronic color charts for dielectric films on silicon», Optics Express, т. 12, с. 1464–1469, 2004.
R. N. Hall, «Electron-Hole Recombination in Germanium», Phys. Rev., т. 87, с. 387, 1952.
J. Czochralski, «Ein neues Verfahren zur Messung der Kristallisationsgeschwindigheit der Metalle», Zeitschrift für physikalische Chemie, т. 92, с. 219–221, 1918.
D
M. Planck, «Distribution of energy in the spectrum», Annalen der Physik, т. 4, с. 553-563, 1901.
M. Planck, «Distribution of energy in the normal spectrum», Verhandlungen der Deutschen Physikalischen Gesellschaft, т. 2, с. 237-245, 1900.

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