Biblio

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2012
A. Richter, Glunz, S. W., Werner, F., Schmidt, J., и Cuevas, A., «Improved quantitative description of Auger recombination in crystalline silicon», Physical Review B, т. 86, № 16, 2012.
S. C. Baker-Finch, McIntosh, K. R., и Terry, M. L., «Isotextured Silicon Solar Cell Analysis and Modeling 1: Optics», IEEE Journal of Photovoltaics, т. 2, № 4, с. 457 - 464, 2012.
2001
P. P. Altermatt, Sinton, R. A., и Heiser, G., «Improvements in numerical modelling of highly injected crystalline silicon solar cells», Solar Energy Materials and Solar Cells, т. 65, с. 149-155(7), 2001.
2000
K. R. McIntosh и Honsberg, C. B., «The Influence of Edge Recombination on a Solar Cell’s IV Curve», 16th European Photovoltaic Solar Energy Conference. 2000.
1998
D. S. Ruby, Yang, P., Zaidi, S., Brueck, S., Roy, M., и Narayanan, S., «Improved Performance of Self-Aligned, Selective-Emitter Silicon Solar Cells», 2nd World Conference and Exhibition on Photovoltaic Solar Energy Conversion. Vienna, Austria, 1998.
1997
R. Einhaus, Vazsonyi, E., Szlufcik, J., Nijs, J., и Mertens, R., «Isotropic texturing of multicrystalline silicon wafers with acidic texturing solutions», Twenty Sixth IEEE Photovoltaic Specialists Conference. New York, NY, USA, с. 167-170, 1451, 1997.
1991
A. B. Sproul и Green, M. A., «Improved value for the silicon intrinsic carrier concentration from 275 to 375 K», Journal of Applied Physics, т. 70, с. 846, 1991.
A. B. Sproul и Green, M. A., «Improved value for the silicon intrinsic carrier concentration from 275 to 375 K», Journal of Applied Physics, т. 70, с. 846-854, 1991.
J. Zhao, A., W., Dai, X., Green, M. A., и Wenham, S. R., «Improvements in Silicon Solar Cell Performance», 22nd IEEE PV Specialists Conference. с. 399-402, 1991.
1990
A. B. Sproul, Green, M. A., и Zhao, J., «Improved value for the silicon intrinsic carrier concentration at 300 K», Applied Physics Letters, т. 57, с. 255, 1990.
1982
E. Yablonovich и Cody, G. D., «Intensity Enhancement in Textured Optical Sheets for Solar Cells», IEEE Transactions on Electron Devices, т. ED-29, с. 300-305, 1982.