Improved value for the silicon intrinsic carrier concentration from 275 to 375 K

Submitted by drupal on Sat, 04/28/2012 - 22:47

A. B. Sproul и Green, M. A., «Improved value for the silicon intrinsic carrier concentration from 275 to 375 K», Journal of Applied Physics, т. 70, с. 846-854, 1991.

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