02042nas a2200169 4500008004100000022001400041245005400055210005300109260001600162300001800178490000800196520156000204100002101764700001901785700002401804856004401828 2012 eng d a0027-842400aFrom the Cover: Anomalously weak solar convection0 aFrom the Cover Anomalously weak solar convection cDec-07-2013 a11928 - 119320 v1093 aConvection in the solar interior is thought to comprise structures on a spectrum of scales. This conclusion emerges from phenomenological studies and numerical simulations, though neither covers the proper range of dynamical parameters of solar convection. Here, we analyze observations of the wavefield in the solar photosphere using techniques of time-distance helioseismology to image flows in the solar interior. We downsample and synthesize 900 billion wavefield observations to produce 3 billion cross-correlations, which we average and fit, measuring 5 million wave travel times. Using these travel times, we deduce the underlying flow systems and study their statistics to bound convective velocity magnitudes in the solar interior, as a function of depth and spherical-harmonic degree ℓ. Within the wavenumber band ℓ < 60, convective velocities are 20–100 times weaker than current theoretical estimates. This constraint suggests the prevalence of a different paradigm of turbulence from that predicted by existing models, prompting the question: what mechanism transports the heat flux of a solar luminosity outwards? Advection is dominated by Coriolis forces for wavenumbers ℓ < 60, with Rossby numbers smaller than approximately 10-2 at r/R⊙ = 0.96, suggesting that the Sun may be a much faster rotator than previously thought, and that large-scale convection may be quasi-geostrophic. The fact that isorotation contours in the Sun are not coaligned with the axis of rotation suggests the presence of a latitudinal entropy gradient. 1 aHanasoge, S., M.1 aDuvall, T., L.1 aSreenivasan, K., R. uhttps://www.pveducation.org/ru/node/52801812nas a2200181 4500008004100000022001400041245008400055210006900139260001600208490000700224520125700231100001901488700002201507700002001529700001701549700002001566856004401586 2012 eng d a1098-012100aImproved quantitative description of Auger recombination in crystalline silicon0 aImproved quantitative description of Auger recombination in crys cJan-10-20120 v863 aAn accurate quantitative description of the Auger recombination rate in silicon as a function of the dopant density and the carrier injection level is important to understand the physics of this fundamental mechanism and to predict the physical limits to the performance of silicon based devices. Technological progress has permitted a near suppression of competing recombination mechanisms, both in the bulk of the silicon crystal and at the surfaces. This, coupled with advanced characterization techniques, has led to an improved determination of the Auger recombination rate, which is lower than previously thought. In this contribution we present a systematic study of the injection-dependent carrier recombination for a broad range of dopant concentrations of high-purity n-type and p-type silicon wafers passivated with state-of-the-art dielectric layers of aluminum oxide or silicon nitride. Based on these measurements, we develop a general parametrization for intrinsic recombination in crystalline silicon at 300 K consistent with the theory of Coulomb-enhanced Auger and radiative recombination. Based on this improved description we are able to analyze physical aspects of the Auger recombination mechanism such as the Coulomb enhancement.1 aRichter, Armin1 aGlunz, Stefan, W.1 aWerner, Florian1 aSchmidt, Jan1 aCuevas, Andrés uhttps://www.pveducation.org/ru/node/52500499nas a2200157 4500008004100000022001400041245006700055210006600122260001600188300001400204490000600218100002800224700002400252700002100276856004400297 2012 eng d a2156-338100aIsotextured Silicon Solar Cell Analysis and Modeling 1: Optics0 aIsotextured Silicon Solar Cell Analysis and Modeling 1 Optics cJan-10-2012 a457 - 4640 v21 aBaker-Finch, Simeon, C.1 aMcIntosh, Keith, R.1 aTerry, Mason, L. uhttps://www.pveducation.org/ru/node/53301327nas a2200133 4500008004100000020002200041245006000063210005900123260002600182520088900208100002401097700002801121856004401149 2012 eng d a978-1-4673-0064-300aOPAL 2: Rapid optical simulation of silicon solar cells0 aOPAL 2 Rapid optical simulation of silicon solar cells aAustin, TX, USAbIEEE3 aThe freeware program OPAL 2 computes the optical losses associated with the front surface of a Si solar cell. It calculates the losses for any angle of incidence within seconds, where the short computation time is achieved by decoupling the ray tracing from the Fresnel equations. Amongst other morphologies, OPAL 2 can be used to assess the random-pyramid texture of c-Si solar cells, or the `isotexture' of mc-Si solar cells, and to determine (i) the optimal thickness of an antireflection coating with or without encapsulation, (ii) the impact of imperfect texturing, such as non-ideal texture angles, over-etched isotexture, and flat regions, and (iii) the subsequent 1D generation profile in the Si. This paper describes the approach and assumptions employed by OPAL 2 and presents examples that demonstrate the dependence of optical losses on texture quality and incident angle.1 aMcIntosh, Keith, R.1 aBaker-Finch, Simeon, C. uhttps://www.pveducation.org/ru/node/53200585nas a2200193 4500008004100000245004800041210004700089260002700136100002200163700002000185700002100205700001800226700001900244700001800263700002100281700002000302700002500322856004400347 2010 eng d00aGen III: Improved Performance at Lower Cost0 aGen III Improved Performance at Lower Cost aHonolulu, HawaiibIEEE1 aCousins, Peter, J1 aSmith, David, D1 aLuan, Hsin-Chiao1 aManning, Jane1 aDennis, Tim, D1 aWaldhaue, Ann1 aWilson, Karen, E1 aHarley, Gabriel1 aMulligan, William, P uhttps://www.pveducation.org/ru/node/29700258nas a2200085 4500008004100000245003800041210003800079100000900117856004600126 2010 eng d00aGISS Surface Temperature Analysis0 aGISS Surface Temperature Analysis1 aNASA uhttp://data.giss.nasa.gov/gistemp/graphs/00448nas a2200133 4500008004100000020002200041245003000063210003000093250001900123260001900142300000800161100002300169856012200192 2010 eng d a978-0-12-374774-700aSolar Cell Device Physics0 aSolar Cell Device Physics aSecond Edition bAcademic Press a4001 aFonash, Stephen, J uhttp://www.amazon.com/Solar-Cell-Device-Physics-Second/dp/0123747740/ref=sr_1_1?s=books&ie=UTF8&qid=1279652144&sr=1-100929nas a2200229 4500008004100000022001300041245004600054210004400100300001400144490000700158520030600165653002600471653002200497653001600519653001700535653002700552100002100579700001700600700002500617700001900642856003800661 2010 eng d a1062799500aSolar cell efficiency tables (version 35)0 aSolar cell efficiency tables version 35 a144–1500 v183 a
Consolidated tables showing an extensive listing of the highest independently confirmed efficiencies for solar cells and modules are presented. Guidelines for inclusion of results into these tables are outlined and new entries since July 2009 are reviewed. Copyright 2010 John Wiley Sons, Ltd.
10aConversion efficiency10aEnergy conversion10asolar cells10aSolar energy10aSolar power generation1 aGreen, Martin, A1 aEmery, Keith1 aHishikawa, Yoshihiro1 aWarta, Wilhelm uhttp://dx.doi.org/10.1002/pip.97400690nas a2200229 4500008004100000245010800041210006900149260002100218100001600239700001200255700001500267700001500282700001200297700001400309700001600323700001700339700001400356700001400370700001500384700001700399856004400416 2010 eng d00aWorld’s Highest Efficiency Triple-junction Solar Cells Fabricated by Inverted Layers Transfer Process0 aWorld s Highest Efficiency Triplejunction Solar Cells Fabricated aHonolulu HI, USA1 aTakamoto, T1 aAgui, T1 aYoshida, A1 aNakaido, K1 aJuso, H1 aSasaki, K1 aNakamura, K1 aYamaguchi, H1 aKodama, T1 aWashio, H1 aImazumi, M1 aTakahashi, M uhttps://www.pveducation.org/ru/node/39500577nas a2200193 4500008004100000245008300041210006900124100001500193700001300208700001500221700001400236700001500250700001300265700001500278700001400293700001800307700001400325856004400339 2009 eng d00aMETAMORPHIC GaInP/GaInAs/Ge TRIPLE-JUNCTION SOLAR CELLS WITH > 41 % EFFICIENCY0 aMETAMORPHIC GaInPGaInAsGe TRIPLEJUNCTION SOLAR CELLS WITH 41 EFF1 aDimroth, F1 aGuter, W1 aSchöne, J1 aWelser, E1 aSteiner, M1 aOliva, E1 aWekkeli, A1 aSiefer, G1 aPhilipps, S P1 aBett, A W uhttps://www.pveducation.org/ru/node/30100389nas a2200109 4500008004100000245008500041210006900126300001200195490000700207100002100214856004400235 2009 eng d00aThe path to 25% silicon solar cell efficiency: History of silicon cell evolution0 apath to 25 silicon solar cell efficiency History of silicon cell a183-1890 v171 aGreen, Martin, A uhttps://www.pveducation.org/ru/node/31700432nas a2200133 4500008004100000020002200041245002700063210002700090250003800117260003600155300000800191100001900199856008000218 2009 eng d a978-3-527-40857-300aPhysics of Solar Cells0 aPhysics of Solar Cells a2nd, updated and expanded edition aMörlenbach, GermanybWiley-VCH a1831 aWürfel, Peter uhttp://www.amazon.com/Physics-Solar-Cells-Principles-Concepts/dp/352740428702010nas a2200145 4500008004100000245010900041210006900150300001400219490000700233520152700240100001701767700001401784700002801798856003801826 2008 eng d00aAnalysis of tandem solar cell efficiencies under {AM1.5G} spectrum using a rapid flux calculation method0 aAnalysis of tandem solar cell efficiencies under AM15G spectrum a225–2330 v163 aWe report the use of a rapid flux calculation method using incomplete Riemann zeta functions as a replacement for the {Bose-Einstein} integral in detailed balance calculations to study the efficiency of tandem solar cell stacks under the terrestrial {AM1.5G} spectrum and under maximum concentration. The maximum limiting efficiency for unconstrained and constrained tandem stacks of up to eight solar cells, under the {AM1.5G} spectrum and maximum concentration, are presented. The results found agree well with previously published results with one exception highlighting the precautions necessary when calculating for devices under the {AM1.5G} spectrum. The band gap sensitivities of two tandem solar cell stack arrangements of current interest were also assessed. In the case of a three solar cell tandem stack the results show a large design space and illustrate that the constrained case is more sensitive to band gap variations. Finally, the effect of a non-optimum uppermost band gap in a series constrained five solar cell tandem stack was investigated. The results indicate that a significant re-design is only required when the uppermost band gap is greater than the optimum value with a relatively small effect on the limiting efficiency. It is concluded that this rapid flux calculation method is a powerful tool for the analysis of tandem solar cells and is particularly useful for the design of devices where optimum band gaps may not be available. Copyright © 2007 John Wiley & Sons, Ltd.
1 aBremner, S P1 aLevy, M Y1 aHonsberg, Christiana, B uhttp://dx.doi.org/10.1002/pip.79901286nas a2200169 4500008004100000022001400041245010500055210006900160300001600229490000700245520069800252653002700950653002300977653002401000100002101024856007101045 2008 eng d a0927-024800aSelf-consistent optical parameters of intrinsic silicon at 300 K including temperature coefficients0 aSelfconsistent optical parameters of intrinsic silicon at 300 K a1305–13100 v923 aAn updated tabulation is presented of the optical properties of intrinsic silicon, of particular interest in solar cell calculations. Improved values of absorption coefficient, refractive index and extinction coefficient at {300&\#xa0;K} are tabulated over the 0.25–1.45&\#xa0;μm wavelength range at 0.01&\#xa0;μm intervals. The self-consistent tabulation was derived from {Kramers–Kronig} analysis of updated reflectance data deduced from the literature. The inclusion of normalised temperature coefficients allows extrapolation over a wide temperature range, with accuracy similar to that of available experimental data demonstrated over the {−24&\#xa0;°C} to {200&\#xa0;°C} range.10aAbsorption coefficient10aoptical properties10aSILICON SOLAR CELLS1 aGreen, Martin, A uhttp://www.sciencedirect.com/science/article/pii/S092702480800215800519nas a2200169 4500008004100000020001800041245002600059210002600085260002600111300000800137520001100145100001600156700002100172700001400193700001500207856012700222 2007 eng d a1-84407-401-300aApplied Photovoltaics0 aApplied Photovoltaics aLondon, UKbEarthscan a3173 aThis paper presents the calculation of the perceived color of dielectric films on silicon. A procedure is shown for computing the perceived color for an arbitrary light source, light incident angle, and film thickness. The calculated color is converted into {RGB} parameters that can be displayed on a color monitor, resulting in the generation of electronic color charts for dielectric films. This paper shows generated electronic color charts for both silicon dioxide and silicon nitride films on silicon.
10aColor10ameasurement10aoptical properties10aThin films1 aHenrie, Justin1 aKellis, Spencer1 aSchultz, Stephen1 aHawkins, Aaron uhttp://www.opticsexpress.org/abstract.cfm?URI=oe-12-7-146400454nas a2200133 4500008004100000245007300041210006900114100002800183700001500211700001800226700001600244700001600260856004400276 2003 eng d00aDependence of aluminium alloying on solar cell processing conditions0 aDependence of aluminium alloying on solar cell processing condit1 aHonsberg, Christiana, B1 aAnwar, K K1 aMehrvarz, H R1 aCotter, J E1 aWenham, S R uhttps://www.pveducation.org/ru/node/33000489nas a2200133 4500008004100000020001800041245005300059210005300112260004800165300000900213100001300222700001500235856010500250 2003 eng d a0-471-49196-900aHandbook of Photovoltaic Science and Engineering0 aHandbook of Photovoltaic Science and Engineering aChichester, EnglandbJohn Wiley & Sons Ltd. a11171 aLuque, A1 aHegedus, S uhttp://www.amazon.com/Handbook-Photovoltaic-Science-Engineering-Antonio/dp/0471491969/ref=pd_sim_b_700416nas a2200133 4500008004100000020001800041245003100059210002700090260003900117300000800156520001100164100001800175856008900193 2003 eng d a1-86094-340-300aThe Physics of Solar Cells0 aPhysics of Solar Cells aLondon, UKbImperial College Press a3553 aWe numerically model crystalline silicon concentrator cells with the inclusion of band gap narrowing (BGN) caused by injected free carriers. In previous studies, the revised room-temperature value of the intrinsic carrier density, ni=1.00x1010cm-3, was inconsistent with the other material parameters of highly injected silicon. In this paper, we show that high-injection experiments can be described consistently with the revised value of ni if free-carrier induced BGN is included, and that such BGN is an important effect in silicon concentrator cells. The new model presented here significantly improves the ability to model highly injected silicon cells with a high level of precision.
1 aAltermatt, Pietro, P1 aSinton, R A1 aHeiser, G uhttp://www.ingentaconnect.com/content/els/09270248/2001/00000065/00000001/art00089" doi = "doi:10.1016/S0927-0248(00)00089-100364nas a2200109 4500008004100000245005700041210005600098260002000154100001300174700002300187856004400210 2001 eng d00aNatural Sunlight Calibration of Silicon Solar Cells.0 aNatural Sunlight Calibration of Silicon Solar Cells aMunich, Germany1 aKeogh, W1 aBlakers, Andrew, W uhttps://www.pveducation.org/ru/node/33600439nas a2200121 4500008004100000245009300041210006900134300001000203100002800213700001500241700001700256856004400273 2001 eng d00aA New Generalized Detailed Balance Formulation to Calculate Solar Cell Efficiency Limits0 aNew Generalized Detailed Balance Formulation to Calculate Solar a22-261 aHonsberg, Christiana, B1 aCorkish, R1 aBremner, S P uhttps://www.pveducation.org/ru/node/32900440nas a2200109 4500008004100000245011500041210006900156260003200225100001400257700001500271856004400286 2001 eng d00aRapid and Accurate Determination of Series Resistance and Fill Factor Losses in Industrial Silicon Solar Cells0 aRapid and Accurate Determination of Series Resistance and Fill F aMunich, Germanyc22/10/20011 aBowden, S1 aRohatgi, A uhttps://www.pveducation.org/ru/node/28800809nas a2200253 4500008004100000245012200041210006900163260000800232300001400240490000700254653002000261653002100281653001900302653003200321653002900353653001500382653002200397653001200419653001600431100002200447700002200469700002000491856004400511 2001 eng d00aOn the use of a bias-light correction for trapping effects in photoconductance-based lifetime measurements of silicon0 ause of a biaslight correction for trapping effects in photocondu bAIP a2772-27780 v8910aCARRIER DENSITY10acarrier lifetime10aelectron traps10aelectron-hole recombination10aelemental semiconductors10ahole traps10aphotoconductivity10aSILICON10asolar cells1 aMacdonald, Daniel1 aSinton, Ronald, A1 aCuevas, Andrés uhttp://link.aip.org/link/?JAP/89/2772/100398nas a2200109 4500008004100000245006300041210006300104260003400167490002800201100001500229856004400244 2000 eng d00aAluminium Back Surface Field in Buried Contact Solar Cells0 aAluminium Back Surface Field in Buried Contact Solar Cells bUniversity of New South Wales0 vBachelor of Engineering1 aAnwar, K K uhttps://www.pveducation.org/ru/node/27500703nas a2200217 4500008004100000245010900041210006900150260000800219300001400227490000700241653001700248653002100265653003200286653002900318653002200347653001200369100001700381700001800398700002500416856004400441 2000 eng d00aCoulomb-enhanced Auger recombination in crystalline silicon at intermediate and high injection densities0 aCoulombenhanced Auger recombination in crystalline silicon at in bAIP a1494-14970 v8810aAuger effect10acarrier lifetime10aelectron-hole recombination10aelemental semiconductors10aphotoconductivity10aSILICON1 aSchmidt, Jan1 aKerr, Mark, J1 aAltermatt, Pietro, P uhttp://link.aip.org/link/?JAP/88/1494/100361nas a2200097 4500008004100000245006900041210006300110100001800173700002800191856004400219 2000 eng d00aThe Influence of Edge Recombination on a Solar Cell’s IV Curve0 aInfluence of Edge Recombination on a Solar Cell s IV Curve1 aMcIntosh, K R1 aHonsberg, Christiana, B uhttps://www.pveducation.org/ru/node/35100475nas a2200121 4500008004100000245013700041210006900178260002900247300000900276100001700285700000700302856004400309 2000 eng d00aMapping of contact resistance and locating shunts on solar cells using Resistance Analysis by Mapping of Potential (RAMP) techniques0 aMapping of contact resistance and locating shunts on solar cells aGlasgow (United Kingdom) a14381 aHeide, A S H1 aal uhttps://www.pveducation.org/ru/node/32600388nas a2200109 4500008004100000245007300041210006900114260001600183100001800199700001700217856004400234 2000 eng d00aOutdoor measurement of 28% efficiency for a mini-concentrator module0 aOutdoor measurement of 28 efficiency for a miniconcentrator modu aDenver, USA1 aO’Neil, M J1 aMcDanal, A J uhttps://www.pveducation.org/ru/node/36000444nas a2200121 4500008004100000245008500041210006900126260003100195300001600226100001600242700002000258856004400278 2000 eng d00aA Quasi-Steady-State Open-Circuit Voltage Method for Solar Cell Characterization0 aQuasiSteadyState OpenCircuit Voltage Method for Solar Cell Chara aGlasgow, Scotlandc05/2000 a1152–11551 aSinton, R A1 aCuevas, Andrés uhttps://www.pveducation.org/ru/node/38500445nas a2200133 4500008004100000245007500041210006900116300001400185100001500199700001400214700002500228700001400253856004400267 2000 eng d00aSimulating Electron-Beam-Induced Current Profiles Across p-n Junctions0 aSimulating ElectronBeamInduced Current Profiles Across pn Juncti a1590-15931 aCorkish, R1 aLuke, K L1 aAltermatt, Pietro, P1 aHeiser, G uhttps://www.pveducation.org/ru/node/29500533nas a2200157 4500008004100000020001800041245007500059210006900134260004600203300001400249100001500263700001400278700002500292700001400317856004400331 2000 eng d a978190291618700aSimulating Electron-Beam-Induced Current Profiles Across p-n Junctions0 aSimulating ElectronBeamInduced Current Profiles Across pn Juncti aGlasgow UKbJames and Jamesc1-5 May 2000 a1590-15931 aCorkish, R1 aLuke, K L1 aAltermatt, Pietro, P1 aHeiser, G uhttps://www.pveducation.org/ru/node/29600453nas a2200133 4500008004100000020001800041245002200059210002200081250001900103260004300122300000800165100002000173856012600193 2000 eng d a0-471-98853-700aSolar Electricity0 aSolar Electricity aSecond Edition aChichester, EnglandbJohn Wiley & Sons a2711 aMarkvart, Tomas uhttp://www.amazon.com/Solar-Electricity-2nd-Tomas-Markvart/dp/0471988537/ref=sr_1_1?s=books&ie=UTF8&qid=1279647029&sr=1-100293nam a2200097 4500008004100000245003500041210003500076260001800111100002200129856004400151 2000 eng d00aSolid State Electronic Devices0 aSolid State Electronic Devices bPrentice Hall1 aStreetman, Ben, G uhttps://www.pveducation.org/ru/node/39200578nas a2200169 4500008004100000245011900041210006900160260000800229300001400237490000700251653002100258653002200279100001900301700002300320700002100343856004400364 1999 eng d00aGeneralized analysis of quasi-steady-state and quasi-transient measurements of carrier lifetimes in semiconductors0 aGeneralized analysis of quasisteadystate and quasitransient meas bAIP a6218-62210 v8610acarrier lifetime10aphotoconductivity1 aNagel, Henning1 aBerge, Christopher1 aAberle, Armin, G uhttp://link.aip.org/link/?JAP/86/6218/100436nas a2200121 4500008004100000245009500041210006900136260002000205100001200225700001200237700002100249856004400270 1998 eng d00a19.8% Efficient Multicrystalline Silicon Solar Cells with Honeycomb Textured Front Surface0 a198 Efficient Multicrystalline Silicon Solar Cells with Honeycom aVienna, Austria1 aZhao, J1 aWang, A1 aGreen, Martin, A uhttps://www.pveducation.org/ru/node/41300659nas a2200205 4500008004100000245011400041210006900155260000800224300001400232490000700246653002900253653001200282653001600294653002000310100001800330700001600348700002100364700002400385856004400409 1998 eng d00a19.8% efficient "honeycomb" textured multicrystalline and 24.4% monocrystalline silicon solar cells0 a198 efficient quothoneycombquot textured multicrystalline and 24 bAIP a1991-19930 v7310aelemental semiconductors10aSILICON10asolar cells10asurface texture1 aZhao, Jianhua1 aWang, Aihua1 aGreen, Martin, A1 aFerrazza, Francesca uhttp://link.aip.org/link/?APL/73/1991/100502nas a2200157 4500008004100000245008000041210006900121260002900190100001400219700001200233700001300245700001400258700001100272700001700283856004400300 1998 eng d00aImproved Performance of Self-Aligned, Selective-Emitter Silicon Solar Cells0 aImproved Performance of SelfAligned SelectiveEmitter Silicon Sol aVienna, Austriac07/19981 aRuby, D S1 aYang, P1 aZaidi, S1 aBrueck, S1 aRoy, M1 aNarayanan, S uhttps://www.pveducation.org/ru/node/37400538nas a2200181 4500008004100000245008200041210006900123300001400192490000600206100001200212700001200224700001100236700001300247700001500260700001600275700002100291856004400312 1997 eng d00a20,000 PERL silicon cells for the "1996 World Solar Challenge" solar car race0 a20000 PERL silicon cells for the 1996 World Solar Challenge sola a269–2760 v51 aZhao, J1 aWang, A1 aYun, F1 aZhang, G1 aRoche, D M1 aWenham, S R1 aGreen, Martin, A uhttps://www.pveducation.org/ru/node/41600517nas a2200157 4500008004100000245009100041210006900132260002200201300001800223100001500241700001600256700001600272700001200288700001500300856004400315 1997 eng d00aIsotropic texturing of multicrystalline silicon wafers with acidic texturing solutions0 aIsotropic texturing of multicrystalline silicon wafers with acid aNew York, NY, USA a167-170, 14511 aEinhaus, R1 aVazsonyi, E1 aSzlufcik, J1 aNijs, J1 aMertens, R uhttps://www.pveducation.org/ru/node/30400494nas a2200157 4500008004100000245007200041210006900113300001200182490000700194100001600201700002000217700001400237700001700251700002400268856004400292 1997 eng d00aLow-cost industrial technologies of crystalline silicon solar cells0 aLowcost industrial technologies of crystalline silicon solar cel a711-7300 v851 aSzlufcik, J1 aSivoththaman, S1 aNlis, J F1 aMertens, R P1 aVan-Overstraeten, R uhttps://www.pveducation.org/ru/node/39400545nas a2200157 4500008004100000022001300041245010300054210006900157260001600226300001400242490000800256100002100264700002100285700001900306856006200325 1997 eng d a0031896500aPreparation of Zinc Selenide Thin Films by Electrodeposition Technique for Solar Cell Applications0 aPreparation of Zinc Selenide Thin Films by Electrodeposition Tec cJan-10-1997 aR11 - R120 v1631 aChandramohan, R.1 aSanjeeviraja, C.1 aMahalingam, T. uhttps://www.pveducation.org/ru/reference/chandramohan199700304nas a2200109 4500008004100000245003900041210003900080300001200119490000600131100001300137856004400150 1997 eng d00aRecent progress in MIS solar cells0 aRecent progress in MIS solar cells a109-1200 v51 aHezel, R uhttps://www.pveducation.org/ru/node/32800432nas a2200145 4500008004100000245005600041210005400097260002200151300001200173100001400185700001600199700001200215700001500227856004400242 1997 eng d00aA simple processing sequence for selective emitters0 asimple processing sequence for selective emitters aNew York, NY, USA a139-1421 aHorzel, J1 aSzlufcik, J1 aNijs, J1 aMertens, R uhttps://www.pveducation.org/ru/node/33100461nas a2200133 4500008004100000245009000041210006900131260002200200300001600222100001300238700001500251700001700266856004400283 1997 eng d00aSurface texturing using reactive ion etching for multicrystalline silicon solar cells0 aSurface texturing using reactive ion etching for multicrystallin aNew York, NY, USA a1451, 47-501 aFukui, K1 aInomata, Y1 aShirasawa, K uhttps://www.pveducation.org/ru/node/31100766nas a2200217 4500008004100000245016200041210007100203260000800274300001400282490000700296653002100303653002200324653002200346653002200368653002800390653001200418653003200430100002200462700002000484856004400504 1996 eng d00aContactless determination of current–voltage characteristics and minority-carrier lifetimes in semiconductors from quasi-steady-state photoconductance data0 aContactless determination of current–voltage characteristics and bAIP a2510-25120 v6910acarrier lifetime10aCV CHARACTERISTIC10aMINORITY CARRIERS10aphotoconductivity10aSEMICONDUCTOR MATERIALS10aSILICON10aSTEADY – STATE CONDITIONS1 aSinton, Ronald, A1 aCuevas, Andrés uhttp://link.aip.org/link/?APL/69/2510/100456nas a2200145 4500008004100000022001400041245004100055210004100096300001200137490000700149100001600156700001400172700002300186856010100209 1996 eng d a0927-024800aTexturing of polycrystalline silicon0 aTexturing of polycrystalline silicon a33 - 420 v401 aStocks, M J1 aCarr, A J1 aBlakers, Andrew, W uhttp://www.sciencedirect.com/science/article/B6V51-3VTFK7T-57/2/eb36bb8dfafef0de9e83d2f685caf54100421nas a2200145 4500008004100000022001300041245005300054210005300107260000900160300001400169490000600183100002100189700002100210856004400231 1995 eng d a1099159X00aOptical properties of intrinsic silicon at 300 K0 aOptical properties of intrinsic silicon at 300 K c1995 a189 - 1920 v31 aGreen, Martin, A1 aKeevers, Mark, J uhttps://www.pveducation.org/ru/node/31600457nas a2200145 4500008004100000245007400041210006900115300001200184490000700196100001400203700001400217700001900231700001700250856004400267 1995 eng d00aOn some thermodynamic aspects of photovoltaic solar energy conversion0 asome thermodynamic aspects of photovoltaic solar energy conversi a201-2220 v361 aBaruch, P1 aDe Vos, A1 aLandsberg, P T1 aParrott, J E uhttps://www.pveducation.org/ru/node/27900361nas a2200133 4500008004100000022001400041245004200055210004000097260001200137300001200149490000800161100001400169856004400183 1995 eng d a1095-920300aSun’s Role in Warming Is Discounted0 aSun s Role in Warming Is Discounted c04/1995 a28 - 290 v2681 aKerr, R A uhttps://www.pveducation.org/ru/node/33700383nas a2200133 4500008004100000245004300041210004300084300001400127490000600141100001900147700002400166700001500190856004400205 1994 eng d00a7000 High Efficiency Cells for a Dream0 a7000 High Efficiency Cells for a Dream a143 - 1520 v21 aVerlinden, P J1 aSwanson, Richard, M1 aCrane, R A uhttps://www.pveducation.org/ru/node/40100294nas a2200085 4500008004100000245005500041210005400096100001400150856004400164 1994 eng d00aAttaining Thirty-Year Photovoltaic System Lifetime0 aAttaining ThirtyYear Photovoltaic System Lifetime1 aDurand, S uhttps://www.pveducation.org/ru/node/30200342nas a2200121 4500008004100000245004400041210004400085300001200129490000600141100001400147700001500161856004400176 1994 eng d00aBuried contact concentrator solar cells0 aBuried contact concentrator solar cells a171-1760 v21 aJordan, D1 aNagle, J P uhttps://www.pveducation.org/ru/node/33400339nas a2200109 4500008004100000245005500041210005500096300001200151490000600163100001600169856004400185 1994 eng d00aDefining terms for crystalline silicon solar cells0 aDefining terms for crystalline silicon solar cells a177-1790 v21 aBasore, P A uhttps://www.pveducation.org/ru/node/28000484nas a2200157 4500008004100000022001300041245007400054210006900128260000900197300000900206490000700215100001800222700002100240700002100261856004400282 1994 eng d a0021897900aDepartures from the principle of superposition in silicon solar cells0 aDepartures from the principle of superposition in silicon solar c1994 a79200 v761 aRobinson, S J1 aAberle, Armin, G1 aGreen, Martin, A uhttps://www.pveducation.org/ru/node/37100666nas a2200205 4500008004100000245012500041210006900166260000800235300001400243490000700257653002400264653002100288653001000309653002200319653001800341653002800359653001300387100001600400856004400416 1994 eng d00aDimensionless solution of the equation describing the effect of surface recombination on carrier decay in semiconductors0 aDimensionless solution of the equation describing the effect of bAIP a2851-28540 v7610aANALYTICAL SOLUTION10acarrier lifetime10aDECAY10aMINORITY CARRIERS10aRECOMBINATION10aSEMICONDUCTOR MATERIALS10aSURFACES1 aSproul, A B uhttp://link.aip.org/link/?JAP/76/2851/100432nam a2200121 4500008004100000020001500041245007700056210006900133250000600202260002300208100002300231856005600254 1994 eng d a047158005800a{VLSI} Fabrication Principles: Silicon and Gallium Arsenide, 2nd Edition0 aVLSI Fabrication Principles Silicon and Gallium Arsenide 2nd Edi a2 bWiley-Interscience1 aGhandhi, Sorab, K. uhttps://www.pveducation.org/ru/reference/ghandi199401006nas a2200157 4500008004100000022001300041245008400054210006900138260001600207300000900223490000700232520051500239100002700754700002300781856004400804 1993 eng d a0021897900aAccurate measurements of the silicon intrinsic carrier density from 78 to 340 K0 aAccurate measurements of the silicon intrinsic carrier density f cJan-01-1993 a32930 v743 aThe intrinsic carrier density in silicon has been measured by a novel technique based on low‐frequency capacitance measurements of a p+‐i‐n+ diode biased in high injection. The major advantage of the method is its insensitivity to uncertainties regarding the exact values of the carrier mobilities, the recombination parameters, and the doping density. The intrinsic carrier density was measured in the temperature range from 78 to 340 K. At 300 K the value of ni was found to be (9.7±0.1)×10^9 cm−3.1 aMisiakos, Konstantinos1 aTsamakis, Dimitris uhttps://www.pveducation.org/ru/node/54200455nas a2200133 4500008004100000022001400041245005700055210005700112260001200169300001400181490000700195100001700202856010200219 1993 eng d a0038-092X00aChoice of an equivalent black body solar temperature0 aChoice of an equivalent black body solar temperature c09/1993 a195 - 1950 v511 aParrott, J E uhttp://www.sciencedirect.com/science/article/B6V50-497TD5S-1HX/2/5b4be52ce15a1f2f2b664fe8bbb37cb600447nas a2200121 4500008004100000245009400041210006900135260001900204100002100223700001600244700002100260856004400281 1993 eng d00aA New Method for the Accurate Measurements of the Lumped Series Resistance of Solar Cells0 aNew Method for the Accurate Measurements of the Lumped Series Re aLouisville, KY1 aAberle, Armin, G1 aWenham, S R1 aGreen, Martin, A uhttps://www.pveducation.org/ru/node/27200557nas a2200157 4500008004100000022001400041245009200055210006900147300001400216490000700230100001500237700001800252700001400270700001400284856010100298 1992 eng d a0927-024800aA simple and effective light trapping technique for polycrystalline silicon solar cells0 asimple and effective light trapping technique for polycrystallin a345 - 3560 v261 aWilleke, G1 aNussbaumer, H1 aBender, H1 aBucher, E uhttp://www.sciencedirect.com/science/article/B6V51-47XG9S8-45/2/acfac830ed036bd52484e2951d6f9c5100392nam a2200097 4500008004100000245007400041210006900115260004500184100002100229856004400250 1992 eng d00aSolar Cells - Operating Principles, Technology and System Application0 aSolar Cells Operating Principles Technology and System Applicati aKensington, AustraliabUniversity of NSW1 aGreen, Martin, A uhttps://www.pveducation.org/ru/node/32200350nas a2200121 4500008004100000245004400041210004400085300001200129490000600141100002000147700001700167856004400184 1991 eng d00aBuried contact concentrator solar cells0 aBuried contact concentrator solar cells a273-2770 v11 aWohlgemuth, J H1 aNarayanan, S uhttps://www.pveducation.org/ru/node/40800526nas a2200157 4500008004100000245010200041210006900143260001900212300001200231100001600243700001600259700001700275700001500292700001700307856004400324 1991 eng d00aDecline of the Carrisa Plains PV Power Plant: The Impact of Concentrating Sunlight on Flat Plates0 aDecline of the Carrisa Plains PV Power Plant The Impact of Conce aLas Vegas, USA a586-5921 aWenger, H J1 aSchaefer, J1 aRosenthal, A1 aHammond, B1 aSchlueter, L uhttps://www.pveducation.org/ru/node/40400733nas a2200241 4500008004100000245008500041210006900126260000800195300001200203490000700215653002000222653002200242653002000264653002300284653002200307653002400329653001200353653001900365653002700384100001600411700002100427856004300448 1991 eng d00aImproved value for the silicon intrinsic carrier concentration from 275 to 375 K0 aImproved value for the silicon intrinsic carrier concentration f bAIP a846-8540 v7010aCARRIER DENSITY10aIV CHARACTERISTIC10aJUNCTION DIODES10aMEDIUM TEMPERATURE10aMINORITY CARRIERS10aSANDIA LABORATORIES10aSILICON10aSILICON DIODES10aTEMPERATURE DEPENDENCE1 aSproul, A B1 aGreen, Martin, A uhttp://link.aip.org/link/?JAP/70/846/100459nas a2200145 4500008004100000022001300041245008500054210006900139260000900208300000800217490000700225100001600232700002100248856004400269 1991 eng d a0021897900aImproved value for the silicon intrinsic carrier concentration from 275 to 375 K0 aImproved value for the silicon intrinsic carrier concentration f c1991 a8460 v701 aSproul, A B1 aGreen, Martin, A uhttps://www.pveducation.org/ru/node/39000418nas a2200145 4500008004100000245005100041210005100092300001200143100001200155700001300167700001100180700002100191700001600212856004400228 1991 eng d00aImprovements in Silicon Solar Cell Performance0 aImprovements in Silicon Solar Cell Performance a399-4021 aZhao, J1 aA., Wang1 aDai, X1 aGreen, Martin, A1 aWenham, S R uhttps://www.pveducation.org/ru/node/41500516nam a2200145 4500008004100000245006700041210006300108260005500171100002300226700002100249700001200270700001600282700001500298856005700313 1991 eng d00aThe Role of Photovoltaics in Reducing Greenhouse Gas Emissions0 aRole of Photovoltaics in Reducing Greenhouse Gas Emissions aCanberrabAustralian Government Publishing Service1 aBlakers, Andrew, W1 aGreen, Martin, A1 aLeo, T.1 aOuthred, H.1 aRobins, B. uhttps://www.pveducation.org/ru/reference/blakers199100392nas a2200097 4500008004100000245011400041210006900155100001200224700001400236856004400250 1991 eng d00aA Sensitivity Analysis of the Spectral Mismatch Correction Procedure Using Wavelength-Dependent Error Sources0 aSensitivity Analysis of the Spectral Mismatch Correction Procedu1 aKing, D1 aHansen, B uhttps://www.pveducation.org/ru/node/34000502nas a2200181 4500008004100000245005400041210005300095300001200148490000600160100001700166700001400183700001100197700001600208700001600224700001500240700002100255856004400276 1990 eng d00a18% efficient polycrystalline silicon solar cells0 a18 efficient polycrystalline silicon solar cells a678-6800 v11 aNarayanan, S1 aZolper, J1 aYun, F1 aWenham, S R1 aSproul, A B1 aChong, C M1 aGreen, Martin, A uhttps://www.pveducation.org/ru/node/35500474nas a2200157 4500008004100000022001300041245007600054210006900130260000900199300000800208490000700216100001600223700002100239700001200260856004400272 1990 eng d a0003695100aImproved value for the silicon intrinsic carrier concentration at 300 K0 aImproved value for the silicon intrinsic carrier concentration a c1990 a2550 v571 aSproul, A B1 aGreen, Martin, A1 aZhao, J uhttps://www.pveducation.org/ru/node/38900434nas a2200145 4500008004100000022001300041245006000054210005800114300001600172490000700188100001400195700001600209700001900225856004400244 1990 eng d a0018938300aMinority-carrier transport parameters in n-type silicon0 aMinoritycarrier transport parameters in ntype silicon a1314 - 13220 v371 aWang, C H1 aMisiakos, K1 aNeugroschel, A uhttps://www.pveducation.org/ru/node/40200611nas a2200169 4500008004100000022001400041245009500055210006900150300001400219490000700233100001900240700002100259700001800280700002200298700002000320856010100340 1990 eng d a0038-092X00aModeling daylight availability and irradiance components from direct and global irradiance0 aModeling daylight availability and irradiance components from di a271 - 2890 v441 aPerez, Richard1 aIneichen, Pierre1 aSeals, Robert1 aMichalsky, Joseph1 aStewart, Ronald uhttp://www.sciencedirect.com/science/article/B6V50-497T9KG-S0/2/034fdf1417cea3a44d8509fe805f679e01652nas a2200181 4500008004100000022001600041245009500057210006900152300001400221490000700235520102700242100001901269700002101288700001801309700002201327700002001349856010101369 1990 eng d a{0038-092X}00aModeling daylight availability and irradiance components from direct and global irradiance0 aModeling daylight availability and irradiance components from di a271–2890 v443 aThis paper presents the latest versions of several models developed by the authors to predict short time-step solar energy and daylight availability quantities needed by energy system modelers or building designers. The modeled quantities are global, direct and diffuse daylight illuminance, diffuse irradiance and illuminance impinging on tilted surfaces of arbitrary orientation, sky zenith luminance and sky luminance angular distribution. All models are original except for the last one which is extrapolated from current standards. All models share a common operating structure and a common set of input data: Hourly (or higher frequency) direct (or diffuse) and global irradiance plus surface dew point temperature. Key experimental observations leading to model development are briefly reviewed. Comprehensive validation results are presented. Model accuracy, assessed in terms of root-mean-square and mean bias errors, is analyzed both as a function of insolation conditions and site climatic environment.
1 aPerez, Richard1 aIneichen, Pierre1 aSeals, Robert1 aMichalsky, Joseph1 aStewart, Ronald uhttp://www.sciencedirect.com/science/article/B6V50-497T9KG-S0/2/034fdf1417cea3a44d8509fe805f679e02152nas a2200445 4500008004100000022001400041245006700055210006600122260001200188300001300200490000700213520083600220653002901056653002801085653002701113653003201140653001701172653002501189653002501214653001901239653003101258653003501289653002901324653002501353653002101378653003101399653001001430653002001440653002301460653003201483653001901515653000701534653001201541653001601553653003701569653002501606653001501631100001601646856004401662 1990 eng d a0018-938300aNumerical modeling of textured silicon solar cells using PC-1D0 aNumerical modeling of textured silicon solar cells using PC1D c02/1990 a337 -3430 v373 aPC-1D is a quasi-one-dimensional finite-element program for modeling semiconductor devices on personal computers. The program offers solar cell researchers a convenient user interface with the ability to address complex issues associated with heavy doping, high-level injection, nonplanar structures, and transients. The physical and numerical models used in PC-1D Version 2 that make it possible to approximate the multidimensional effects found in textured crystalline silicon solar cells, including the effects of increased front-surface recombination, oblique photon path angles, and light trapping, are presented. As an example of how the model can be applied, PC-1D is used to investigate the interpretation of spectral quantum efficiency data as a tool for diagnosing the internal performance of textured silicon solar cells10aelemental semiconductors10afinite element analysis10afinite-element program10afront-surface recombination10aheavy doping10ahigh-level injection10ainternal performance10alight trapping10amicrocomputer applications10amodeling semiconductor devices10amultidimensional effects10anonplanar structures10anumerical models10aoblique photon path angles10aPC-1D10aPC-1D Version 210apersonal computers10asemiconductor device models10asemiconductors10aSi10aSILICON10asolar cells10aspectral quantum efficiency data10atextured solar cells10atransients1 aBasore, P A uhttps://www.pveducation.org/ru/node/44101165nas a2200121 4500008004100000245003300041210003200074260002600106300000800132520080900140100002100949856007300970 1990 eng d00aPhotovoltaics: Coming of Age0 aPhotovoltaics Coming of Age aOrlando, USAc05/1990 a1-83 aThe history of photovoltaic development is reviewed. An outline of the potential of the technology as the author views it is given. The challenge to be met to reach this potential is to develop high-efficiency technologies which can be produced at low cost. Three factors suggest this is possible. The first is the latent efficiency still to be recovered with even the most highly developed cell technologies. The second is the recent progress with tandem cells, which suggests that most of the 30-40% efficiency advantage over single-junction devices will eventually be realized. Tandem cells are likely to offer cost advantages in very high volume production. The third is the pyramid of possibilities, the wide range of semiconductors which still have to be evaluated for their photovoltaic potential.1 aGreen, Martin, A uhttp://ieeexplore.ieee.org/lpdocs/epic03/wrapper.htm?arnumber=11158200524nas a2200157 4500008004100000022001300041245008700054210006900141300000900210490000700219100002000226700003000246700002200276700002100298856004700319 1989 eng d a0003695100a16.7% efficient, laser textured, buried contact polycrystalline silicon solar cell0 a167 efficient laser textured buried contact polycrystalline sili a23630 v551 aZolper, John, C1 aNarayanan, Srinivasamohan1 aWenham, Stuart, R1 aGreen, Martin, A uhttp://apl.aip.org/applab/v55/i22/p2363_s100431nas a2200133 4500008004100000245006200041210006200103260001700165300001600182490000700198100001800205700002100223856005300244 1989 eng d00aRevised optical air mass tables and approximation formula0 aRevised optical air mass tables and approximation formula bOSAc11/1989 a4735–47380 v281 aKasten, Fritz1 aYoung, Andrew, T uhttp://ao.osa.org/abstract.cfm?URI=ao-28-22-473500317nas a2200109 4500008004100000245003000041210003000071260001300101100002200114700002100136856005000157 1988 eng d00aBuried contact solar cell0 aBuried contact solar cell cFebruary1 aWenham, Stuart, R1 aGreen, Martin, A uhttp://www.freepatentsonline.com/4726850.html00346nas a2200121 4500008004100000245004600041210004400087300000900131100001300140700001300153700001400166856004400180 1988 eng d00aSOLAR SIMULATION - PROBLEMS AND SOLUTIONS0 aSOLAR SIMULATION PROBLEMS AND SOLUTIONS a10871 aEmery, K1 aMyers, D1 aRummel, S uhttps://www.pveducation.org/ru/node/30600803nas a2200253 4500008004100000245013700041210006900178260000800247300001400255490000700269653002100276653002700297653002200324653001800346653001200364653002400376653002300400653002100423653001300444653001100457100001900468700001800487856004400505 1987 eng d00aAnalysis of the interaction of a laser pulse with a silicon wafer: Determination of bulk lifetime and surface recombination velocity0 aAnalysis of the interaction of a laser pulse with a silicon wafe bAIP a2282-22930 v6110acarrier lifetime10aLASERRADIATION HEATING10aMINORITY CARRIERS10aRECOMBINATION10aSILICON10aSILICON SOLAR CELLS10aSURFACE PROPERTIES10aTHEORETICAL DATA10aVELOCITY10aWAFERS1 aLuke, Keung, L1 aCheng, Li-Jen uhttp://link.aip.org/link/?JAP/61/2282/100444nas a2200145 4500008004100000022001300041245006300054210006300117260001600180300000800196490000700204100002200211700002100233856004400254 1987 eng d a0021897900aLight trapping properties of pyramidally textured surfaces0 aLight trapping properties of pyramidally textured surfaces cJan-01-1987 a2430 v621 aCampbell, Patrick1 aGreen, Martin, A uhttps://www.pveducation.org/ru/node/52700406nas a2200145 4500008004100000022001400041245004500055210004500100260000800145300001600153490000700169100001600176700002400192856004400216 1987 eng d a0018-938300aRecombination in highly injected silicon0 aRecombination in highly injected silicon cjun a1380 - 13890 v341 aSinton, R A1 aSwanson, Richard, M uhttps://www.pveducation.org/ru/node/38400379nas a2200121 4500008004100000245004800041210004700089260003000136300001000166100002000176700001700196856004400213 1986 eng d00aFlat-Plate Solar Array Project Final Report0 aFlatPlate Solar Array Project Final Report bJet Propulsion Laboratory a86-311 aRoss, Jnr., R G1 aSmokler, M I uhttps://www.pveducation.org/ru/node/37200476nas a2200145 4500008004100000022001300041245009200054210006900146260000900215300000900224490000700233100002200240700002400262856004400286 1985 eng d a0021897900aCalculation of surface generation and recombination velocities at the Si-SiO2 interface0 aCalculation of surface generation and recombination velocities a c1985 a42670 v581 aEades, Wendell, D1 aSwanson, Richard, M uhttps://www.pveducation.org/ru/node/30300287nam a2200109 4500008004100000245001500041210001500056260003400071100001500105700001300120856004400133 1985 eng d00aPerception0 aPerception aNew YorkbAlfred A. Knopf Inc1 aSekuler, R1 aBlake, R uhttps://www.pveducation.org/ru/node/37700284nam a2200085 4500008004100000245004900041210004700090100001700137856004400154 1985 eng d00aQED : The Strange Theory of Light and Matter0 aQED The Strange Theory of Light and Matter1 aFeynman, R P uhttps://www.pveducation.org/ru/node/30700410nas a2200145 4500008004100000245004700041210004700088260001200135490001000147100001400157700001900171700001400190700001600204856004400220 1984 eng d00aLimiting Efficiency of Silicon Solar Cells0 aLimiting Efficiency of Silicon Solar Cells c05/19840 vED-311 aTiedje, T1 aYablonovich, E1 aCody, G D1 aBrooks, B G uhttps://www.pveducation.org/ru/node/39900338nam a2200097 4500008003900000245004700039210004700086260005400133100000900187856004400196 1984 d00aPhotovoltaics for Residential Applications0 aPhotovoltaics for Residential Applications aGolden, ColoradobSolar Energy Research Institute1 aSERI uhttps://www.pveducation.org/ru/node/42001679nas a2200265 4500008004100000022001400041245011300055210006900168300001200237490001000249520089300259653001201152653001001164653002001174653002101194653002301215653002901238653003301267653001501300653001201315100001501327700001401342700001301356856004401369 1983 eng d a0018-938300aModeling of carrier mobility against carrier concentration in arsenic-, phosphorus-, and boron-doped silicon0 aModeling of carrier mobility against carrier concentration in ar a764–90 vED-303 aNew carrier mobility data for both arsenic- and boron-doped silicon are presented in the high doping range. The data definitely show that the electron mobility in As-doped silicon is significantly lower than in P-doped silicon for carrier concentrations higher than 1019 cm-3. By integrating these data with those previously published, empirical relationships able to model the carrier mobility against carrier concentration in the whole experimental range examined to date (about eight decades in concentration) for As-, P-, and B-doped silicon are derived. Different parameters in the expression for the n-type dopants provide differentiation between the electron mobility in As- and P-doped silicon. Finally, it is shown that these new expressions, once implemented in the {SUPREM} {II} process simulator, lead to reduced errors in the simulation of the sheet resistance values
10aarsenic10aboron10aCARRIER DENSITY10acarrier mobility10adigital simulation10aelemental semiconductors10aheavily doped semiconductors10aphosphorus10aSILICON1 aMasetti, G1 aSeveri, M1 aSolmi, S uhttps://www.pveducation.org/ru/node/35000354nas a2200133 4500008004100000245003900041210003600080300001400116490000700130100001200137700001300149700001400162856004400176 1983 eng d00aOn Phosphorus Diffusion in Silicon0 aPhosphorus Diffusion in Silicon a6912-69220 v541 aHu, S M1 aFahey, P1 aSutton, P uhttps://www.pveducation.org/ru/node/33300341nam a2200109 4500008004100000245004800041210004700089260002600136100001000162700001500172856004400187 1983 eng d00aSolar Cells: From Basic to Advanced Systems0 aSolar Cells From Basic to Advanced Systems aNew YorkbMcGraw-Hill1 aHu, C1 aWhite, R M uhttps://www.pveducation.org/ru/node/33200278nas a2200097 4500008004100000245003000041210002900071260002000100100001600120856004400136 1983 eng d00aVoltaic Cell, Chapter XIV0 aVoltaic Cell Chapter XIV aNew YorkbWiley1 aBenjamin, P uhttps://www.pveducation.org/ru/node/28300368nas a2200109 4500008004100000245006700041210006700108300001200175490000600187100002100193856004400214 1982 eng d00aAccuracy of Analytical Expressions for Solar Cell Fill Factors0 aAccuracy of Analytical Expressions for Solar Cell Fill Factors a337-3400 v71 aGreen, Martin, A uhttps://www.pveducation.org/ru/node/32100400nas a2200121 4500008004100000245006900041210006900110300001200179490001000191100001900201700001400220856004400234 1982 eng d00aIntensity Enhancement in Textured Optical Sheets for Solar Cells0 aIntensity Enhancement in Textured Optical Sheets for Solar Cells a300-3050 vED-291 aYablonovich, E1 aCody, G D uhttps://www.pveducation.org/ru/node/41200438nas a2200133 4500008004100000020001800041245007400059210006900133260001800202300000800220520001100228100002100239856004400260 1982 eng d a0-85823-580-300aSolar Cells: Operating Principles, Technology and System Applications0 aSolar Cells Operating Principles Technology and System Applicati bPrentice-Hall a2743 aA surface etchant for silicon comprising an anisotropic etchant containing silicon is disclosed. The etchant provides a textured surface of randomly spaced and sized pyramids on a silicon surface. It is particularly useful in reducing the reflectivity of solar cell surfaces.
1 aBailey, William, L1 aColeman, Michael, G1 aHarris, Cynthia, B1 aLesk, Israel, A uhttp://patft.uspto.gov/netacgi/nph-Parser?Sect1=PTO2&Sect2=HITOFF&p=1&u=%2Fnetahtml%2FPTO%2Fsearch-bool.html&r=32&f=G&l=50&co1=AND&d=PTXT&s1=4,137,123&OS=4,137,123&RS=4,137,12300438nas a2200109 4500008004100000245012300041210006900164260002600233300000800259100001700267856004400284 1978 eng d00aOptimizing Solar Cell Performance by Simultaneous Consideration of Grid Pattern Design and Interconnect Configurations0 aOptimizing Solar Cell Performance by Simultaneous Consideration aWashington, D.C., USA a1-81 aSerreze, H B uhttps://www.pveducation.org/ru/node/37800432nas a2200121 4500008004100000245010600041210006900147300001200216490001000228100001400238700001400252856004400266 1977 eng d00aElectronic processes at grain boundaries in polycrystalline semiconductors under optical illumination0 aElectronic processes at grain boundaries in polycrystalline semi a397-4020 vED-241 aCard, H C1 aYang, E S uhttps://www.pveducation.org/ru/node/29200763nas a2200145 4500008004100000022001400041245006500055210006300120260001200183300001400195490000700209520034100216100001600557856004400573 1977 eng d a0018-938300aPhysical operation of back-surface-field silicon solar cells0 aPhysical operation of backsurfacefield silicon solar cells c04/1977 a322 - 3250 v243 aUsing exact numerical solutions of carrier transport in the back-surface-field silicon solar cell both for guidance and for verification, the physical mechanisms effective in this device are identified and explained. Concise analytical descriptions of the cell performance, based on the pertinent device physics, are formulated.
1 aFossum, J G uhttps://www.pveducation.org/ru/node/30900311nam a2200109 4500008004100000245002500041210002500066260003400091100001600125700001600141856004400157 1976 eng d00aApplied Solar Energy0 aApplied Solar Energy bAddison Wesley Publishing Co.1 aMeinel, A B1 aMeinel, M P uhttps://www.pveducation.org/ru/node/35200294nas a2200097 4500008004100000245004200041210004200083260001500125100001200140856004400152 1976 eng d00aHistorical Development of Solar Cells0 aHistorical Development of Solar Cells bIEEE Press1 aWolf, M uhttps://www.pveducation.org/ru/node/40901393nam a2200121 4500008004100000245001600041210001600057260001900073300000800092520111100100100001601211856004401227 1976 eng d00aSolar Cells0 aSolar Cells aNew YorkbIEEE a5123 aThe present volume constitutes a reference book containing classic papers in the field of solar cells as well as a relatively complete photovoltaic bibliography. The general subjects include the historical development of solar cells, solar-cell theory, cell fabrication, space systems, terrestrial applications, and working-group resumes and discussions. Individual papers deal with such topics as silicon p-n junction photocells, effects of temperature on photovoltaic solar-energy conversion, series resistance effects on solar-cell measurements, drift fields in photovoltaic solar-energy-converter cells, the violet cell, the photovoltaic effect in CdS, efficiency calculations of heterojunction solar-energy converters, CdTe solar cells and photovoltaic heterojunctions in II-VI compounds, the photovoltaic effect in GaAs p-n junctions, and the multiple-junction edge-illuminated solar cell. Other papers discuss silicon solar cell degradation in the space environment, direct solar-energy conversion for terrestrial use, single-crystal and polycrystalline silicon, and CdS/Cu2S thin-film cells
1 aBackus, C E uhttps://www.pveducation.org/ru/node/27700471nas a2200133 4500008004100000022001400041245006100055210006100116300001200177490000700189100001900196700002100215856010100236 1976 eng d a0038-092X00aSolar thermal power system based on optical transmission0 aSolar thermal power system based on optical transmission a31 - 390 v181 aVant-Hull, L L1 aHildebrandt, A F uhttp://www.sciencedirect.com/science/article/B6V50-497SCJS-2H/2/78dfffb8fca290387fb2596f8969649800460nas a2200145 4500008004100000245007000041210006900111300001200180100001400192700001400206700001400220700002000234700001600254856004400270 1973 eng d00aOptimum Design of Anti-reflection coating for silicon solar cells0 aOptimum Design of Antireflection coating for silicon solar cells a168-1711 aWang, E Y1 aYu, F T S1 aSims, V L1 aBrandhorst, E W1 aBroder, J D uhttps://www.pveducation.org/ru/node/40300960nas a2200145 4500008004100000022001300041245007800054210006900132260001600201300000900217490000700226520052400233100001300757856004400770 1971 eng d a0021897900aHigh Electron Mobility in Zinc Selenide Through Low-Temperature Annealing0 aHigh Electron Mobility in Zinc Selenide Through LowTemperature A cJan-01-1971 a12040 v423 aElectron mobility in ZnSe has been measured between 40° and 400°K. It is shown that through repeated annealing in liquid Zn the mobility maximum can be increased to 12 000 cm2∕V sec. This is one of the highest mobilities measured for semiconductors with band gaps as wide as that of ZnSe (2.7 eV). The increase in mobility is mainly due to elimination of doubly charged acceptor states. The residual scattering is believed to be due, in part, to charged isolated impurities and, in part, to paired impurity dipoles.1 aAven, M. uhttps://www.pveducation.org/ru/node/53100480nas a2200121 4500008004100000022001400041245008500055210006900140300002800209490000700237100001400244856010000258 1970 eng d a0038-092X00aThe measurement of solar spectral irradiance at different terrestrial elevations0 ameasurement of solar spectral irradiance at different terrestria a43 - 50, IN1-IN4, 51-570 v131 aLaue, E G uhttp://www.sciencedirect.com/science/article/B6V50-497T7KC-T/2/c932c2f01c2de3c36c0f461c991f791a00407nas a2200121 4500008004100000022001400041245004800055210004400103300001400147490000700161100001600168856010100184 1969 eng d a0038-092X00aThe absorption of radiation in solar stills0 aabsorption of radiation in solar stills a333 - 3460 v121 aCooper, P I uhttp://www.sciencedirect.com/science/article/B6V50-497BD6C-27/2/a4ca2069fe8c8b0cfa571de016d93cc501055nas a2200133 4500008004100000245008800041210006900129300001200198490000600210520062200216100001700838700001600855856005000871 1964 eng d00aNondestructive determination of thickness and refractive index of transparent films0 aNondestructive determination of thickness and refractive index o a43–510 v83 aA simple nondestructive method of measuring the refractive index and thickness of transparent films on reflective substrates has been developed. The technique involves the use of a microscope equipped with a monochromatic filter on the objective and a stage that can be rotated so that the reflected light is observed at various angles. The film thickness, d, is given by d = {[ΔNλ]/[2µ(cos} r2, - cos r1)], where λ is the wavelength of the filtered light, µ is the refractive index, and {ΔN} is the number of fringes observed between the angles of refraction r2, and r1.
1 aPliskin, W A1 aConrad, E E uhttp://portal.acm.org/citation.cfm?id=166239100347nas a2200109 4500008004100000245005700041210005700098490000600155100001200161700002000173856004400193 1963 eng d00aSeries Resistance Effects on Solar Cell Measurements0 aSeries Resistance Effects on Solar Cell Measurements0 v31 aWolf, M1 aRauschenbach, H uhttps://www.pveducation.org/ru/node/41000426nas a2200133 4500008004100000245006900041210006800110260000800178300001200186490000700198100002200205700002200227856004300249 1961 eng d00aDetailed Balance Limit of Efficiency of p-n Junction Solar Cells0 aDetailed Balance Limit of Efficiency of pn Junction Solar Cells bAIP a510-5190 v321 aShockley, William1 aQueisser, Hans, J uhttp://link.aip.org/link/?JAP/32/510/100381nas a2200121 4500008004100000245004000041210004000081260005600121300000700177100001200184700001900196856004400215 1960 eng d00aHigh efficiency silicon solar cells0 aHigh efficiency silicon solar cells bU.S. Army Signal Research and Development Labc1960 a221 aDale, B1 aRudenberg, H G uhttps://www.pveducation.org/ru/node/29900300nas a2200097 4500008004100000245003700041210003600078260002900114100001500143856004400158 1959 eng d00aSemiconductor Devices, Chapter 80 aSemiconductor Devices Chapter 8 aNew JerseybVan Nostrand1 aShive, J N uhttps://www.pveducation.org/ru/node/37900383nas a2200121 4500008004100000245006500041210006400106260001300170300001200183490000700195100001500202856004400217 1958 eng d00aMeasurement of sheet resistivities with the four-point probe0 aMeasurement of sheet resistivities with the fourpoint probe cMay 1958 a711-7180 v341 aSmits, F M uhttps://www.pveducation.org/ru/node/38600450nas a2200133 4500008004100000245009400041210006900135300001200204490000700216100001600223700001600239700001700255856004400272 1954 eng d00aA New Silicon P-N Junction Photocell for Converting Solar Radiation into Electrical Power0 aNew Silicon PN Junction Photocell for Converting Solar Radiation a676-6770 v251 aChapin, D M1 aFuller, C S1 aPearson, G L uhttps://www.pveducation.org/ru/node/29300364nas a2200121 4500008004100000245004500041210004400086260003900130300000800169490000700177100001400184856004400198 1952 eng d00aElectron-Hole Recombination in Germanium0 aElectronHole Recombination in Germanium bAmerican Physical Societyc07/1952 a3870 v871 aHall, R N uhttps://www.pveducation.org/ru/node/32400378nas a2200121 4500008004100000245006000041210006000101300001200161490000700173100001900180700001300199856004400212 1952 eng d00aPhotoelectric Properties of Tonically Bombarded Silicon0 aPhotoelectric Properties of Tonically Bombarded Silicon a802-8150 v311 aKingsbury, E F1 aOhl, R S uhttps://www.pveducation.org/ru/node/34100850nas a2200133 4500008004100000245006000041210006000101300000800161490000700169520045300176100002200629700001400651856005100665 1952 eng d00aStatistics of the Recombinations of Holes and Electrons0 aStatistics of the Recombinations of Holes and Electrons a8350 v873 aThe statistics of the recombination of holes and electrons in semiconductors is analyzed on the basis of a model in which the recombination occurs through the mechanism of trapping. A trap is assumed to have an energy level in the energy gap so that its charge may have either of two values differing by one electronic charge. The dependence of lifetime of injected carriers upon initial conductivity and upon injected carrier density is discussed.1 aShockley, William1 aRead, W T uhttp://link.aps.org/doi/10.1103/PhysRev.87.83500241nas a2200097 4500008004100000245001800041210001700059490000800076100001500084856004400099 1952 eng d00aZone-refining0 aZonerefining0 v1941 aPfann, W G uhttps://www.pveducation.org/ru/node/36400387nam a2200097 4500008004100000245008600041210006900127260002700196100002200223856004400245 1950 eng d00aElectrons and holes in semiconductors with applications to transistor electronics0 aElectrons and holes in semiconductors with applications to trans aNew Yorkbvan Nostrand1 aShockley, William uhttps://www.pveducation.org/ru/node/38000322nas a2200121 4500008004100000245003600041210003500077260001200112300001300124490000600137100001300143856004400156 1941 eng d00aLight-Sensitive Electric Device0 aLightSensitive Electric Device c05/1941 a402, 6020 v21 aOhl, R S uhttps://www.pveducation.org/ru/node/35900328nas a2200121 4500008004100000245003900041210003700080300000800117490000700125100001300132700001700145856004400162 1939 eng d00aA Thallous Sulphide Photo EMF Cell0 aThallous Sulphide Photo EMF Cell a4570 v291 aNix, F C1 aTreptwo, A W uhttps://www.pveducation.org/ru/node/35800488nas a2200133 4500008004100000022001300041245013000054210006900184260001600253300001400269490000800283100001900291856004400310 1934 eng d a0003380400aAbsolutwerte der optischen Absorptionskonstanten von Alkalihalogenidkristallen im Gebiet ihrer ultravioletten Eigenfrequenzen0 aAbsolutwerte der optischen Absorptionskonstanten von Alkalihalog cJan-01-1934 a434 - 4640 v4111 aBauer, Gerhard uhttps://www.pveducation.org/ru/node/52900345nas a2200109 4500008004100000245006200041210005600103300000800159490000600167100001800173856004400191 1933 eng d00aThe Copper-Cuprous-Oxide Rectifier and Photoelectric Cell0 aCopperCuprousOxide Rectifier and Photoelectric Cell a1410 v51 aGrondahl, L O uhttps://www.pveducation.org/ru/node/32300325nas a2200109 4500008004100000245005000041210004900091300000800140490000700148100001600155856004400171 1931 eng d00aUber eine neue Selen- Sperrschicht Photozelle0 aUber eine neue Selen Sperrschicht Photozelle a2860 v321 aBergmann, L uhttps://www.pveducation.org/ru/node/28400373nas a2200109 4500008004100000245007600041210006900117300001200186490000800198100001300206856004400219 1923 eng d00aSur les rayons β secondaires produits dans un gaz par des rayons X0 aSur les rayons beta secondaires produits dans un gaz par des ray a169-1710 v1771 aAuger, P uhttps://www.pveducation.org/ru/node/27600388nas a2200109 4500008004100000245008400041210006900125300001400194490000700208100001900215856004400234 1918 eng d00aEin neues Verfahren zur Messung der Kristallisationsgeschwindigheit der Metalle0 aEin neues Verfahren zur Messung der Kristallisationsgeschwindigh a219–2210 v921 aCzochralski, J uhttps://www.pveducation.org/ru/node/29800345nas a2200121 4500008004100000245004300041210004300084260001200127490000700139653001700146100001600163856004400179 1905 eng d00aGeneration and transformation of light0 aGeneration and transformation of light c06/19050 v1710aEinstein19051 aEinstein, A uhttps://www.pveducation.org/ru/node/30500337nas a2200121 4500008004100000245004300041210004300084260001200127300001200139490000600151100001400157856004400171 1901 eng d00aDistribution of energy in the spectrum0 aDistribution of energy in the spectrum c03/1901 a553-5630 v41 aPlanck, M uhttps://www.pveducation.org/ru/node/36600327nas a2200109 4500008004100000245005000041210005000091300001200141490000600153100001400159856004400173 1900 eng d00aDistribution of energy in the normal spectrum0 aDistribution of energy in the normal spectrum a237-2450 v21 aPlanck, M uhttps://www.pveducation.org/ru/node/36500301nas a2200109 4500008004100000245004000041210003500081300000800116490000700124100001600131856004400147 1883 eng d00aOn a New Form of Selenium Photocell0 aNew Form of Selenium Photocell a4650 v261 aFritts, C E uhttps://www.pveducation.org/ru/node/31000319nas a2200121 4500008004100000245003600041210003200077300000800109490000800117100001500125700001300140856004400153 1877 eng d00aThe Action of Light on Selenium0 aAction of Light on Selenium a1130 vA251 aAdams, W G1 aDay, R E uhttps://www.pveducation.org/ru/node/27300297nas a2200109 4500008004100000245003800041210003500079300000800114490000800122100001300130856004400143 1874 eng d00aOn Conductance in Metal Sulphides0 aConductance in Metal Sulphides a5560 v1531 aBraun, F uhttps://www.pveducation.org/ru/node/28900392nas a2200109 4500008004100000245009000041210007100131300001000202490000700212100001900219856004400238 1841 eng d00aMemoire sur les effects d´electriques produits sous l´influence des rayons solaires0 aMemoire sur les effects d´electriques produits sous l´influence a35-420 v541 aBecquerel, A E uhttps://www.pveducation.org/ru/node/28200412nas a2200109 4500008004100000245011100041210006900152300001200221490000600233100001900239856004400258 1839 eng d00aRecherches sur les effets de la radiation chimique de la lumiere solaire au moyen des courants electriques0 aRecherches sur les effets de la radiation chimique de la lumiere a145-1490 v91 aBecquerel, A E uhttps://www.pveducation.org/ru/node/281