Biblio

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Journal Article
R. A. Sinton и Cuevas, A., «Contactless determination of current–voltage characteristics and minority-carrier lifetimes in semiconductors from quasi-steady-state photoconductance data», Applied Physics Letters, т. 69, с. 2510-2512, 1996.
J. Schmidt, Kerr, M. J., и Altermatt, P. P., «Coulomb-enhanced Auger recombination in crystalline silicon at intermediate and high injection densities», Journal of Applied Physics, т. 88, с. 1494-1497, 2000.
W. Shockley и Queisser, H. J., «Detailed Balance Limit of Efficiency of p-n Junction Solar Cells», Journal of Applied Physics, т. 32, с. 510-519, 1961.
A. B. Sproul, «Dimensionless solution of the equation describing the effect of surface recombination on carrier decay in semiconductors», Journal of Applied Physics, т. 76, с. 2851-2854, 1994.
J. Henrie, Kellis, S., Schultz, S., и Hawkins, A., «Electronic color charts for dielectric films on silicon», Optics Express, т. 12, с. 1464–1469, 2004.
J. R. G. Ross и Smokler, M. I., «Flat-Plate Solar Array Project Final Report», с. 86-31, 1986.
S. M. Hanasoge, Duvall, T. L., и Sreenivasan, K. R., «From the Cover: Anomalously weak solar convection», Proceedings of the National Academy of Sciences, т. 109, № 30, с. 11928 - 11932, 2012.
K. Bothe, Sinton, R., и Schmidt, J., «Fundamental boron-oxygen-related carrier lifetime limit in mono- and multicrystalline silicon», Progress in Photovoltaics: Research and Applications, т. 13, с. 287 - 296, 2005.
K. Bothe, Sinton, R., и Schmidt, J., «Fundamental boron-oxygen-related carrier lifetime limit in mono- and multicrystalline silicon», Progress in Photovoltaics: Research and Applications, т. 13, с. 287 - 296, 2005.
M. J. Kerr, Cuevas, A., и Sinton, R. A., «Generalized analysis of quasi-steady-state and transient decay open circuit voltage measurements», Journal of Applied Physics, т. 91, с. 399, 2002.
A. Richter, Glunz, S. W., Werner, F., Schmidt, J., и Cuevas, A., «Improved quantitative description of Auger recombination in crystalline silicon», Physical Review B, т. 86, № 16, 2012.
A. B. Sproul, Green, M. A., и Zhao, J., «Improved value for the silicon intrinsic carrier concentration at 300 K», Applied Physics Letters, т. 57, с. 255, 1990.
A. B. Sproul и Green, M. A., «Improved value for the silicon intrinsic carrier concentration from 275 to 375 K», Journal of Applied Physics, т. 70, с. 846-854, 1991.
A. B. Sproul и Green, M. A., «Improved value for the silicon intrinsic carrier concentration from 275 to 375 K», Journal of Applied Physics, т. 70, с. 846, 1991.
P. P. Altermatt, Sinton, R. A., и Heiser, G., «Improvements in numerical modelling of highly injected crystalline silicon solar cells», Solar Energy Materials and Solar Cells, т. 65, с. 149-155(7), 2001.
F. M. Smits, «Measurement of sheet resistivities with the four-point probe», Bell System Technical Journal, т. 34, с. 711-718, 1958.
R. Perez, Ineichen, P., Seals, R., Michalsky, J., и Stewart, R., «Modeling daylight availability and irradiance components from direct and global irradiance», Solar Energy, т. 44, с. 271 - 289, 1990.
R. Perez, Ineichen, P., Seals, R., Michalsky, J., и Stewart, R., «Modeling daylight availability and irradiance components from direct and global irradiance», Solar Energy, т. 44, с. 271–289, 1990.
R. Perez, Ineichen, P., Seals, R., Michalsky, J., и Stewart, R., «Modeling daylight availability and irradiance components from direct and global irradiance», Solar Energy, т. 44, с. 271 - 289, 1990.
R. Perez, Ineichen, P., Seals, R., Michalsky, J., и Stewart, R., «Modeling daylight availability and irradiance components from direct and global irradiance», Solar Energy, т. 44, с. 271–289, 1990.
G. Masetti, Severi, M., и Solmi, S., «Modeling of carrier mobility against carrier concentration in arsenic-, phosphorus-, and boron-doped silicon», IEEE Transactions on Electron Devices, т. ED-30, с. 764–9, 1983.
G. Masetti, Severi, M., и Solmi, S., «Modeling of carrier mobility against carrier concentration in arsenic-, phosphorus-, and boron-doped silicon», IEEE Transactions on Electron Devices, т. ED-30, с. 764–9, 1983.
S. M. Hu, Fahey, P., и Sutton, P., «On Phosphorus Diffusion in Silicon», On Phosphorus Diffusion in Silicon, т. 54, с. 6912-6922, 1983.
R. Chandramohan, Sanjeeviraja, C., и Mahalingam, T., «Preparation of Zinc Selenide Thin Films by Electrodeposition Technique for Solar Cell Applications», physica status solidi (a), т. 163, № 2, с. R11 - R12, 1997.
P. P. Altermatt, Schenk, A., Geelhaar, F., и Heiser, G., «Reassessment of the intrinsic carrier density in crystalline silicon in view of band-gap narrowing», Journal of Applied Physics, т. 93, № 3, с. 1598, 2003.

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