Submitted by drupal on Sat, 04/28/2012 - 22:47 G. Masetti, Severi, M., и Solmi, S., «Modeling of carrier mobility against carrier concentration in arsenic-, phosphorus-, and boron-doped silicon», IEEE Transactions on Electron Devices, т. ED-30, с. 764–9, 1983. Log in or register to post comments BibTeX RTF Tagged MARC EndNote XML RIS