Biblio

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M
F. M. Smits, Measurement of sheet resistivities with the four-point probe, Bell System Technical Journal, vol 34, pp 711-718, 1958.
F. Dimroth 기타, METAMORPHIC GaInP/GaInAs/Ge TRIPLE-JUNCTION SOLAR CELLS WITH > 41 % EFFICIENCY, 34th IEEE Photovoltaic Specialists Conference. 2009.
F. Dimroth 기타, METAMORPHIC GaInP/GaInAs/Ge TRIPLE-JUNCTION SOLAR CELLS WITH > 41 % EFFICIENCY, 34th IEEE Photovoltaic Specialists Conference. 2009.
F. Dimroth 기타, METAMORPHIC GaInP/GaInAs/Ge TRIPLE-JUNCTION SOLAR CELLS WITH > 41 % EFFICIENCY, 34th IEEE Photovoltaic Specialists Conference. 2009.
R. Perez, Ineichen, P., Seals, R., Michalsky, J., 와/과 Stewart, R., Modeling daylight availability and irradiance components from direct and global irradiance, Solar Energy, vol 44, pp 271 - 289, 1990.
R. Perez, Ineichen, P., Seals, R., Michalsky, J., 와/과 Stewart, R., Modeling daylight availability and irradiance components from direct and global irradiance, Solar Energy, vol 44, pp 271 - 289, 1990.
R. Perez, Ineichen, P., Seals, R., Michalsky, J., 와/과 Stewart, R., Modeling daylight availability and irradiance components from direct and global irradiance, Solar Energy, vol 44, pp 271–289, 1990.
R. Perez, Ineichen, P., Seals, R., Michalsky, J., 와/과 Stewart, R., Modeling daylight availability and irradiance components from direct and global irradiance, Solar Energy, vol 44, pp 271–289, 1990.
G. Masetti, Severi, M., 와/과 Solmi, S., Modeling of carrier mobility against carrier concentration in arsenic-, phosphorus-, and boron-doped silicon, IEEE Transactions on Electron Devices, vol ED-30, pp 764–9, 1983.
G. Masetti, Severi, M., 와/과 Solmi, S., Modeling of carrier mobility against carrier concentration in arsenic-, phosphorus-, and boron-doped silicon, IEEE Transactions on Electron Devices, vol ED-30, pp 764–9, 1983.
Q
R. A. Sinton 와/과 Cuevas, A., A Quasi-Steady-State Open-Circuit Voltage Method for Solar Cell Characterization, in 16th European Photovoltaic Solar Energy Conference, Glasgow, Scotland, 2000, pp 1152–1155.

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