General Properties of Silicon

Property Value
Atomic Density 5 x 1022 cm-3
5 x 1028 m-3
Atomic Weight 28.09
Density (ρ) 2.328 g cm-3
2328 kg m-3
Energy Bandgap (EG) 1.1242 eV
Intrinsic Carrier Concentration (ni) at 300K* 1 x 1010 cm-3
1 x 1016 m-3
Intrinsic Carrier Concentration (ni) at 25°C* 8.6 x 109 cm-3
8.6 x 1015 m-3
Lattice Constant 0.543095 nm
Melting Point 1415 °C
Thermal Conductivity 1.5 Wcm-1K-1
150 Wm-1K-1
Thermal Expansion Coefficient 2.6 x 10-6 K-1
Effective Density of States in the Conduction Band (NC) 3 x 1019 cm-3
3 x 1025 m-3
Effective Density of States in the Conduction Band (NV) 1 x 1019 cm-3
1 x 1025 m-3
Relative Permittivity (εr) 11.7
Electron Affinity 4.05 eV
Electron Diffusion Coefficient (De) kT/q µe
Hole Diffusion Coefficient (Dh) kT/q µh

* updated values given in [1] [2].

Properties of Silicon as a Function of Doping (300 K)

Carrier mobility is a function of carrier type and doping level. The values calculated here use the same formula as PC1D to fit values given in [3] and [4][5] [6]. Lifetime as a function of doping is given on bulk lifetime.

Doping Level: cm-3
Electron mobility (µe) Diffusivity (De)
Majority carrier: cm2V-1s-1
Minority carrier: cm2V-1s-1
cm2s-1
cm2s-1
Hole Mobility (µh) Diffusivity (Dh)
Majority carrier: cm2V-1s-1
Minority carrier: cm2V-1s-1
cm2s-1
cm2s-1
Approx. Resistivity (for doping > 1012)
n-type: ohm cm
p-type: ohm cm