Modeling of carrier mobility against carrier concentration in arsenic-, phosphorus-, and boron-doped silicon

Submitted by drupal on Sat, 04/28/2012 - 22:47

G. Masetti, Severi, M., and Solmi, S., “Modeling of carrier mobility against carrier concentration in arsenic-, phosphorus-, and boron-doped silicon”, IEEE Transactions on Electron Devices, vol. ED-30, pp. 764–9, 1983.

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