Biblio

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Journal Article
G. Masetti, Severi, M., and Solmi, S., Modeling of carrier mobility against carrier concentration in arsenic-, phosphorus-, and boron-doped silicon, IEEE Transactions on Electron Devices, vol. ED-30, pp. 764–9, 1983.
R. Perez, Ineichen, P., Seals, R., Michalsky, J., and Stewart, R., Modeling daylight availability and irradiance components from direct and global irradiance, Solar Energy, vol. 44, pp. 271 - 289, 1990.
R. Perez, Ineichen, P., Seals, R., Michalsky, J., and Stewart, R., Modeling daylight availability and irradiance components from direct and global irradiance, Solar Energy, vol. 44, pp. 271–289, 1990.
C. H. Wang, Misiakos, K., and Neugroschel, A., Minority-carrier transport parameters in n-type silicon, IEEE Transactions on Electron Devices, vol. 37, pp. 1314 - 1322, 1990.
A. E. Becquerel, Memoire sur les effects d´electriques produits sous l´influence des rayons solaires, Annalen der Physick und Chemie, vol. 54, pp. 35-42, 1841.
E. G. Laue, The measurement of solar spectral irradiance at different terrestrial elevations, Solar Energy, vol. 13, pp. 43 - 50, IN1-IN4, 51-57, 1970.
F. M. Smits, Measurement of sheet resistivities with the four-point probe, Bell System Technical Journal, vol. 34, pp. 711-718, 1958.