Biblio

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R. Einhaus, Vazsonyi, E., Szlufcik, J., Nijs, J., and Mertens, R., Isotropic texturing of multicrystalline silicon wafers with acidic texturing solutions, Twenty Sixth IEEE Photovoltaic Specialists Conference. New York, NY, USA, pp. 167-170, 1451, 1997.
S. C. Baker-Finch, McIntosh, K. R., and Terry, M. L., Isotextured Silicon Solar Cell Analysis and Modeling 1: Optics, IEEE Journal of Photovoltaics, vol. 2, no. 4, pp. 457 - 464, 2012.
E. Yablonovich and Cody, G. D., Intensity Enhancement in Textured Optical Sheets for Solar Cells, IEEE Transactions on Electron Devices, vol. ED-29, pp. 300-305, 1982.
K. R. McIntosh and Honsberg, C. B., The Influence of Edge Recombination on a Solar Cell’s IV Curve, 16th European Photovoltaic Solar Energy Conference. 2000.
J. Zhao, A., W., Dai, X., Green, M. A., and Wenham, S. R., Improvements in Silicon Solar Cell Performance, 22nd IEEE PV Specialists Conference. pp. 399-402, 1991.
P. P. Altermatt, Sinton, R. A., and Heiser, G., Improvements in numerical modelling of highly injected crystalline silicon solar cells, Solar Energy Materials and Solar Cells, vol. 65, pp. 149-155(7), 2001.
A. B. Sproul and Green, M. A., Improved value for the silicon intrinsic carrier concentration from 275 to 375 K, Journal of Applied Physics, vol. 70, p. 846, 1991.
A. B. Sproul and Green, M. A., Improved value for the silicon intrinsic carrier concentration from 275 to 375 K, Journal of Applied Physics, vol. 70, pp. 846-854, 1991.
A. B. Sproul, Green, M. A., and Zhao, J., Improved value for the silicon intrinsic carrier concentration at 300 K, Applied Physics Letters, vol. 57, p. 255, 1990.
A. Richter, Glunz, S. W., Werner, F., Schmidt, J., and Cuevas, A., Improved quantitative description of Auger recombination in crystalline silicon, Physical Review B, vol. 86, no. 16, 2012.
D. S. Ruby, Yang, P., Zaidi, S., Brueck, S., Roy, M., and Narayanan, S., Improved Performance of Self-Aligned, Selective-Emitter Silicon Solar Cells, 2nd World Conference and Exhibition on Photovoltaic Solar Energy Conversion. Vienna, Austria, 1998.