Biblio
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[ Author] Title Type Year Filters: First Letter Of Title is I and Author is A. B. Sproul [Clear All Filters]
“Improved value for the silicon intrinsic carrier concentration from 275 to 375 K”, Journal of Applied Physics, vol. 70, pp. 846-854, 1991.
, “Improved value for the silicon intrinsic carrier concentration at 300 K”, Applied Physics Letters, vol. 57, p. 255, 1990.
, “Improved value for the silicon intrinsic carrier concentration from 275 to 375 K”, Journal of Applied Physics, vol. 70, p. 846, 1991.
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