%0 Journal Article %J Journal of Applied Physics %D 2001 %T On the use of a bias-light correction for trapping effects in photoconductance-based lifetime measurements of silicon %A Daniel Macdonald %A Ronald A. Sinton %A Andrés Cuevas %K CARRIER DENSITY %K carrier lifetime %K electron traps %K electron-hole recombination %K elemental semiconductors %K hole traps %K photoconductivity %K SILICON %K solar cells %B Journal of Applied Physics %I AIP %V 89 %P 2772-2778 %G eng %U http://link.aip.org/link/?JAP/89/2772/1 %R 10.1063/1.1346652