%0 Journal Article
%J Journal of Applied Physics
%D 2002
%T General parameterization of Auger recombination in crystalline silicon
%A Mark J Kerr
%A Andrés Cuevas
%K Auger effect
%K carrier lifetime
%K electron-hole recombination
%K elemental semiconductors
%K SILICON
%B Journal of Applied Physics
%I AIP
%V 91
%P 2473-2480
%G eng
%U http://link.aip.org/link/?JAP/91/2473/1
%R 10.1063/1.1432476
%0 Journal Article
%J Journal of Applied Physics
%D 2002
%T Generalized analysis of quasi-steady-state and transient decay open circuit voltage measurements
%A Mark J Kerr
%A Andrés Cuevas
%A Ronald A. Sinton
%X The current–voltage characteristics of solar cells and photodiodes can be determined by measuring the open-circuit voltage as a function of a slowly varying light intensity. This article presents a detailed theoretical analysis and interpretation of such quasi-steady-state Voc measurements (QssVoc). The ability of this analysis to accurately obtain the true steady-state device characteristics even in the case of high lifetime, high resistivity silicon devices is demonstrated experimentally. The QssVoc technique can be used to determine the minority carrier lifetime, and the new generalized analysis is required to do this accurately. An important outcome is that solar cell and diode device characteristics can be obtained from measurements of either the photoconductance or the open-circuit voltage, even using transient techniques.
%B Journal of Applied Physics
%V 91
%P 399
%8 2002
%G eng
%R 10.1063/1.1416134