%0 Journal Article %J Thin Solid Films %D 2000 %T Photoelectrochemical properties of copper oxide thin films coated on an n-Si substrate %X The photoelectrochemical properties of the copper oxide thin film coated on the n-type silicon electrode were investigated as a function of film deposition temperature. The variation in the deposition temperature affected the film morphology and the ratio of copper to oxygen. In case of the films deposited below 200°C, the main phase was found to be CuO while the amount of the Cu2O phase increased with further increases in deposition temperature. The n-silicon photoelectrode showed enhanced photocurrent–potential (I–V) properties by forming a copper oxide/n-silicon heterojunction. In particular, the electrode, which mainly consisted of a CuO phase, showed better photoelectrochemical conversion efficiencies compared to the Cu2O phase. This result was explained in terms of the electrical conductance and transmittance of the copper oxide film. %B Thin Solid Films %V 372 %P 250 - 256 %G eng %U http://www.sciencedirect.com/science/article/pii/S0040609000010580 %R http://dx.doi.org/10.1016/S0040-6090(00)01058-0