TY - JOUR T1 - On the use of a bias-light correction for trapping effects in photoconductance-based lifetime measurements of silicon JF - Journal of Applied Physics Y1 - 2001 A1 - Daniel Macdonald A1 - Ronald A. Sinton A1 - Andrés Cuevas KW - CARRIER DENSITY KW - carrier lifetime KW - electron traps KW - electron-hole recombination KW - elemental semiconductors KW - hole traps KW - photoconductivity KW - SILICON KW - solar cells PB - AIP VL - 89 UR - http://link.aip.org/link/?JAP/89/2772/1 KW - Macdonald2001 ER - TY - ABST T1 - United States Patent: 4137123 - Texture etching of silicon: method Y1 - 1979 A1 - William L. Bailey A1 - Michael G. Coleman A1 - Cynthia B. Harris A1 - Israel A. Lesk AB -

A surface etchant for silicon comprising an anisotropic etchant containing silicon is disclosed. The etchant provides a textured surface of randomly spaced and sized pyramids on a silicon surface. It is particularly useful in reducing the reflectivity of solar cell surfaces.

UR - http://patft.uspto.gov/netacgi/nph-Parser?Sect1=PTO2&Sect2=HITOFF&p=1&u=%2Fnetahtml%2FPTO%2Fsearch-bool.html&r=32&f=G&l=50&co1=AND&d=PTXT&s1=4,137,123&OS=4,137,123&RS=4,137,123 KW - Bailey1979 ER - TY - JOUR T1 - Uber eine neue Selen- Sperrschicht Photozelle JF - Physikalische Zeitschrift Y1 - 1931 A1 - Bergmann, L. VL - 32 N1 -
KW - Bergmann1931 ER -