TY - JOUR T1 - Improved quantitative description of Auger recombination in crystalline silicon JF - Physical Review B Y1 - 2012 A1 - Richter, Armin A1 - Stefan W. Glunz A1 - Werner, Florian A1 - Jan Schmidt A1 - Andrés Cuevas AB - An accurate quantitative description of the Auger recombination rate in silicon as a function of the dopant density and the carrier injection level is important to understand the physics of this fundamental mechanism and to predict the physical limits to the performance of silicon based devices. Technological progress has permitted a near suppression of competing recombination mechanisms, both in the bulk of the silicon crystal and at the surfaces. This, coupled with advanced characterization techniques, has led to an improved determination of the Auger recombination rate, which is lower than previously thought. In this contribution we present a systematic study of the injection-dependent carrier recombination for a broad range of dopant concentrations of high-purity n-type and p-type silicon wafers passivated with state-of-the-art dielectric layers of aluminum oxide or silicon nitride. Based on these measurements, we develop a general parametrization for intrinsic recombination in crystalline silicon at 300 K consistent with the theory of Coulomb-enhanced Auger and radiative recombination. Based on this improved description we are able to analyze physical aspects of the Auger recombination mechanism such as the Coulomb enhancement. VL - 86 CP - 16 J1 - Phys. Rev. B KW - Richter2012 ER - TY - JOUR T1 - Isotextured Silicon Solar Cell Analysis and Modeling 1: Optics JF - IEEE Journal of Photovoltaics Y1 - 2012 A1 - Baker-Finch, Simeon C. A1 - McIntosh, Keith R. A1 - Terry, Mason L. VL - 2 CP - 4 J1 - IEEE J. Photovoltaics KW - 533 ER - TY - JOUR T1 - Improvements in numerical modelling of highly injected crystalline silicon solar cells JF - Solar Energy Materials and Solar Cells Y1 - 2001 A1 - Pietro P Altermatt A1 - Sinton, R.A. A1 - G. Heiser AB -
We numerically model crystalline silicon concentrator cells with the inclusion of band gap narrowing (BGN) caused by injected free carriers. In previous studies, the revised room-temperature value of the intrinsic carrier density, ni=1.00x1010cm-3, was inconsistent with the other material parameters of highly injected silicon. In this paper, we show that high-injection experiments can be described consistently with the revised value of ni if free-carrier induced BGN is included, and that such BGN is an important effect in silicon concentrator cells. The new model presented here significantly improves the ability to model highly injected silicon cells with a high level of precision.
VL - 65 UR - http://www.ingentaconnect.com/content/els/09270248/2001/00000065/00000001/art00089" doi = "doi:10.1016/S0927-0248(00)00089-1 KW - Altermatt2001 ER - TY - Generic T1 - The Influence of Edge Recombination on a Solar Cell’s IV Curve T2 - 16th European Photovoltaic Solar Energy Conference Y1 - 2000 A1 - McIntosh, K. R. A1 - Christiana B Honsberg JA - 16th European Photovoltaic Solar Energy Conference N1 -