TY - CONF T1 - Gen III: Improved Performance at Lower Cost T2 - 35th IEEE Photovoltaic Specialists Conference Y1 - 2010 A1 - Peter J. Cousins A1 - David D. Smith A1 - Hsin-Chiao Luan A1 - Jane Manning A1 - Tim D. Dennis A1 - Ann Waldhaue A1 - Karen E. Wilson A1 - Gabriel Harley A1 - William P. Mulligan JA - 35th IEEE Photovoltaic Specialists Conference PB - IEEE CY - Honolulu, Hawaii N1 -
KW - Cousins2010 ER - TY - JOUR T1 - GISS Surface Temperature Analysis Y1 - 2010 A1 - NASA UR - http://data.giss.nasa.gov/gistemp/graphs/ N1 -
KW - NASA2010 ER - TY - JOUR T1 - Global temperature change JF - Proceedings of the National Academy of Sciences Y1 - 2006 A1 - Hansen, J. VL - 103 N1 -
KW - Hansen2006 ER - TY - JOUR T1 - General parameterization of Auger recombination in crystalline silicon JF - Journal of Applied Physics Y1 - 2002 A1 - Mark J Kerr A1 - Andrés Cuevas KW - Auger effect KW - carrier lifetime KW - electron-hole recombination KW - elemental semiconductors KW - SILICON PB - AIP VL - 91 UR - http://link.aip.org/link/?JAP/91/2473/1 KW - Kerr2002 ER - TY - JOUR T1 - Generalized analysis of quasi-steady-state and transient decay open circuit voltage measurements JF - Journal of Applied Physics Y1 - 2002 A1 - Mark J Kerr A1 - Andrés Cuevas A1 - Ronald A. Sinton AB - The current–voltage characteristics of solar cells and photodiodes can be determined by measuring the open-circuit voltage as a function of a slowly varying light intensity. This article presents a detailed theoretical analysis and interpretation of such quasi-steady-state Voc measurements (QssVoc). The ability of this analysis to accurately obtain the true steady-state device characteristics even in the case of high lifetime, high resistivity silicon devices is demonstrated experimentally. The QssVoc technique can be used to determine the minority carrier lifetime, and the new generalized analysis is required to do this accurately. An important outcome is that solar cell and diode device characteristics can be obtained from measurements of either the photoconductance or the open-circuit voltage, even using transient techniques. VL - 91 N1 -
KW - Kerr2002 ER - TY - JOUR T1 - Generalized analysis of quasi-steady-state and quasi-transient measurements of carrier lifetimes in semiconductors JF - Journal of Applied Physics Y1 - 1999 A1 - Henning Nagel A1 - Christopher Berge A1 - Armin G Aberle KW - carrier lifetime KW - photoconductivity PB - AIP VL - 86 UR - http://link.aip.org/link/?JAP/86/6218/1 KW - Nagel1999 ER - TY - JOUR T1 - Generation and transformation of light JF - Annalen der Physik Y1 - 1905 A1 - A. Einstein KW - Einstein1905 VL - 17 N1 -
KW - Einstein1905 ER -