TY - CONF
T1 - Gen III: Improved Performance at Lower Cost
T2 - 35th IEEE Photovoltaic Specialists Conference
Y1 - 2010
A1 - Peter J. Cousins
A1 - David D. Smith
A1 - Hsin-Chiao Luan
A1 - Jane Manning
A1 - Tim D. Dennis
A1 - Ann Waldhaue
A1 - Karen E. Wilson
A1 - Gabriel Harley
A1 - William P. Mulligan
JA - 35th IEEE Photovoltaic Specialists Conference
PB - IEEE
CY - Honolulu, Hawaii
N1 -
KW - Cousins2010
ER -
TY - JOUR
T1 - GISS Surface Temperature Analysis
Y1 - 2010
A1 - NASA
UR - http://data.giss.nasa.gov/gistemp/graphs/
N1 -
KW - NASA2010
ER -
TY - JOUR
T1 - Global temperature change
JF - Proceedings of the National Academy of Sciences
Y1 - 2006
A1 - Hansen, J.
VL - 103
N1 -
KW - Hansen2006
ER -
TY - JOUR
T1 - General parameterization of Auger recombination in crystalline silicon
JF - Journal of Applied Physics
Y1 - 2002
A1 - Mark J Kerr
A1 - Andrés Cuevas
KW - Auger effect
KW - carrier lifetime
KW - electron-hole recombination
KW - elemental semiconductors
KW - SILICON
PB - AIP
VL - 91
UR - http://link.aip.org/link/?JAP/91/2473/1
KW - Kerr2002
ER -
TY - JOUR
T1 - Generalized analysis of quasi-steady-state and transient decay open circuit voltage measurements
JF - Journal of Applied Physics
Y1 - 2002
A1 - Mark J Kerr
A1 - Andrés Cuevas
A1 - Ronald A. Sinton
AB - The current–voltage characteristics of solar cells and photodiodes can be determined by measuring the open-circuit voltage as a function of a slowly varying light intensity. This article presents a detailed theoretical analysis and interpretation of such quasi-steady-state Voc measurements (QssVoc). The ability of this analysis to accurately obtain the true steady-state device characteristics even in the case of high lifetime, high resistivity silicon devices is demonstrated experimentally. The QssVoc technique can be used to determine the minority carrier lifetime, and the new generalized analysis is required to do this accurately. An important outcome is that solar cell and diode device characteristics can be obtained from measurements of either the photoconductance or the open-circuit voltage, even using transient techniques.
VL - 91
N1 -
KW - Kerr2002
ER -
TY - JOUR
T1 - Generalized analysis of quasi-steady-state and quasi-transient measurements of carrier lifetimes in semiconductors
JF - Journal of Applied Physics
Y1 - 1999
A1 - Henning Nagel
A1 - Christopher Berge
A1 - Armin G Aberle
KW - carrier lifetime
KW - photoconductivity
PB - AIP
VL - 86
UR - http://link.aip.org/link/?JAP/86/6218/1
KW - Nagel1999
ER -
TY - JOUR
T1 - Generation and transformation of light
JF - Annalen der Physik
Y1 - 1905
A1 - A. Einstein
KW - Einstein1905
VL - 17
N1 -
KW - Einstein1905
ER -