TY - JOUR
T1 - Analysis of tandem solar cell efficiencies under {AM1.5G} spectrum using a rapid flux calculation method
JF - Progress in Photovoltaics: Research and Applications
Y1 - 2008
A1 - S. P. Bremner
A1 - M. Y. Levy
A1 - Christiana B Honsberg
AB -
We report the use of a rapid flux calculation method using incomplete Riemann zeta functions as a replacement for the {Bose-Einstein} integral in detailed balance calculations to study the efficiency of tandem solar cell stacks under the terrestrial {AM1.5G} spectrum and under maximum concentration. The maximum limiting efficiency for unconstrained and constrained tandem stacks of up to eight solar cells, under the {AM1.5G} spectrum and maximum concentration, are presented. The results found agree well with previously published results with one exception highlighting the precautions necessary when calculating for devices under the {AM1.5G} spectrum. The band gap sensitivities of two tandem solar cell stack arrangements of current interest were also assessed. In the case of a three solar cell tandem stack the results show a large design space and illustrate that the constrained case is more sensitive to band gap variations. Finally, the effect of a non-optimum uppermost band gap in a series constrained five solar cell tandem stack was investigated. The results indicate that a significant re-design is only required when the uppermost band gap is greater than the optimum value with a relatively small effect on the limiting efficiency. It is concluded that this rapid flux calculation method is a powerful tool for the analysis of tandem solar cells and is particularly useful for the design of devices where optimum band gaps may not be available. Copyright © 2007 John Wiley & Sons, Ltd.
VL - 16
UR - http://dx.doi.org/10.1002/pip.799
KW - Bremner2008
ER -
TY - JOUR
T1 - Applied Photovoltaics
Y1 - 2007
A1 - Wenham, S.R.
A1 - Martin A Green
A1 - Watt, M. E.
A1 - R. Corkish
AB -
PB - Earthscan
CY - London, UK
SN - 1-84407-401-3
UR - http://www.amazon.com/Applied-Photovoltaics-Stuart-R-Wenham/dp/1844074013/ref=sr_1_1?ie=UTF8&s=books&qid=1279558328&sr=8-1
N1 - Introduction
1. The Characteristics of Sunlight
2. Semiconductors and P-N Junctions
3. The Behavior of Solar Cells
4. Cell Properties and Design
5. PV Cell Interconnection and Module Fabrication
6. Stand-Alone Photovoltaic System Components
7. Designing Stand-Alone Photovoltaic Systems
8. Specific Purpose Photovoltaic Applications
9. Remote Area Power Supply Systems
10. Grid-Connected Photovoltaic Systems
11. Photovoltaic Water Pumping System Components
12. PV Water Pumping System Design
Appendicies
Index
KW - Wenham2007
ER -
TY - Generic
T1 - Approaching the 29% limit efficiency of silicon solar cells
T2 - Thirty-First IEEE Photovoltaic Specialists Conference
Y1 - 2005
A1 - Richard M Swanson
JA - Thirty-First IEEE Photovoltaic Specialists Conference
PB - 01/2005
CY - Lake buena Vista, FL, USA
N1 -
KW - Swanson2005
ER -
TY - THES
T1 - Aluminium Back Surface Field in Buried Contact Solar Cells
Y1 - 2000
A1 - Anwar, K.K.
PB - University of New South Wales
VL - Bachelor of Engineering
N1 -
KW - Anwar2000
ER -
TY - JOUR
T1 - Attaining Thirty-Year Photovoltaic System Lifetime
JF - Progress in Photovoltaics: Research and Applications
Y1 - 1994
A1 - Durand, S.
N1 -
KW - Durand1994
ER -
TY - JOUR
T1 - Accurate measurements of the silicon intrinsic carrier density from 78 to 340 K
JF - Journal of Applied Physics
Y1 - 1993
A1 - Misiakos, Konstantinos
A1 - Tsamakis, Dimitris
AB - The intrinsic carrier density in silicon has been measured by a novel technique based on low‐frequency capacitance measurements of a p+‐i‐n+ diode biased in high injection. The major advantage of the method is its insensitivity to uncertainties regarding the exact values of the carrier mobilities, the recombination parameters, and the doping density. The intrinsic carrier density was measured in the temperature range from 78 to 340 K. At 300 K the value of ni was found to be (9.7±0.1)×10^9 cm−3.
VL - 74
CP - 5
J1 - J. Appl. Phys.
KW - Misiakos93
ER -
TY - JOUR
T1 - Analysis of the interaction of a laser pulse with a silicon wafer: Determination of bulk lifetime and surface recombination velocity
JF - Journal of Applied Physics
Y1 - 1987
A1 - Keung L. Luke
A1 - Li-Jen Cheng
KW - carrier lifetime
KW - LASERRADIATION HEATING
KW - MINORITY CARRIERS
KW - RECOMBINATION
KW - SILICON
KW - SILICON SOLAR CELLS
KW - SURFACE PROPERTIES
KW - THEORETICAL DATA
KW - VELOCITY
KW - WAFERS
PB - AIP
VL - 61
UR - http://link.aip.org/link/?JAP/61/2282/1
KW - Luke1987
ER -
TY - JOUR
T1 - Accuracy of Analytical Expressions for Solar Cell Fill Factors
JF - Solar Cells
Y1 - 1982
A1 - Martin A Green
VL - 7
N1 -
KW - Green1982
ER -
TY - JOUR
T1 - Application of the superposition principle to solar-cell analysis
JF - IEEE Transactions on Electron Devices
Y1 - 1979
A1 - F.A. Lindholm
A1 - Fossum, J.G.
A1 - E.L. Burgess
AB - The principle of superposition is used to derive from fundamentals the widely used shifting approximation that the current-voltage characteristic of an illuminated solar cell is the dark current-voltage characteristic shifted by the short-circuit photocurrent. Thus the derivation requires the linearity of the boundary-value problems that underlie the electrical characteristics. This focus on linearity defines the conditions that must hold if the shifting approximation is to apply with good accuracy. In this regard, if considerable photocurrent and considerable dark thermal recombination current both occur within the junction space-charge region, then the shifting approximation is invalid. From a rigorous standpoint, it is invalid also if low-injection concentrations of holes and electrons are not maintained throughout the quasi-neutral regions. The presence of sizable series resistance also invalidates the shifting approximation. Methods of analysis are presented to treat these cases for which shifting is not strictly valid. These methods are based on an understanding of the physics of cell operation. This understanding is supported by laboratory experiments and by exact computer solution of the relevant boundary-value problems. For the case of high injection in the base region, the method of analysis employed accurately yields the dependence of the open-circuit voltage on the short-circuit current (or the illumination level).
VL - 26
KW - Lindholm1979
ER -
TY - BOOK
T1 - Applied Solar Energy
Y1 - 1976
A1 - Meinel, A.B.
A1 - Meinel, M.P.
PB - Addison Wesley Publishing Co.
N1 -
KW - Meinel1976
ER -
TY - JOUR
T1 - The absorption of radiation in solar stills
JF - Solar Energy
Y1 - 1969
A1 - P.I. Cooper
VL - 12
UR - http://www.sciencedirect.com/science/article/B6V50-497BD6C-27/2/a4ca2069fe8c8b0cfa571de016d93cc5
N1 -
KW - Cooper1969
ER -
TY - JOUR
T1 - Absolutwerte der optischen Absorptionskonstanten von Alkalihalogenidkristallen im Gebiet ihrer ultravioletten Eigenfrequenzen
JF - Annalen der Physik
Y1 - 1934
A1 - Bauer, Gerhard
VL - 411
CP - 4
J1 - Ann. Phys.
KW - Bauer1934
ER -
TY - JOUR
T1 - The Action of Light on Selenium
JF - Proceedings of the Royal Society, London
Y1 - 1877
A1 - Adams, W.G.
A1 - Day, R.E.
VL - A25
N1 -
KW - Adams1877
ER -