TY - JOUR T1 - Isotextured Silicon Solar Cell Analysis and Modeling 1: Optics JF - IEEE Journal of Photovoltaics Y1 - 2012 A1 - Baker-Finch, Simeon C. A1 - McIntosh, Keith R. A1 - Terry, Mason L. VL - 2 CP - 4 J1 - IEEE J. Photovoltaics KW - 533 ER - TY - Generic T1 - World’s Highest Efficiency Triple-junction Solar Cells Fabricated by Inverted Layers Transfer Process T2 - 35 IEEE Photovoltaic Specialist Conference Y1 - 2010 A1 - Takamoto, T. A1 - Agui, T. A1 - Yoshida, A. A1 - Nakaido, K. A1 - Juso, H. A1 - Sasaki, K. A1 - Nakamura, K. A1 - Yamaguchi, H. A1 - Kodama, T. A1 - Washio, H. A1 - Imazumi, M. A1 - Takahashi, M. JA - 35 IEEE Photovoltaic Specialist Conference CY - Honolulu HI, USA N1 -
KW - Takamoto2010 ER - TY - JOUR T1 - Photographic surveying of minority carrier diffusion length in polycrystalline silicon solar cells by electroluminescence JF - Applied Physics Letters Y1 - 2005 A1 - Takashi Fuyuki A1 - Hayato Kondo A1 - Tsutomu Yamazaki A1 - Yu Takahashi A1 - Yukiharu Uraoka KW - carrier lifetime KW - electroluminescence KW - elemental semiconductors KW - MINORITY CARRIERS KW - SILICON KW - solar cells PB - AIP VL - 86 UR - http://link.aip.org/link/?APL/86/262108/1 KW - Fuyuki2005 ER - TY - JOUR T1 - Accurate measurements of the silicon intrinsic carrier density from 78 to 340 K JF - Journal of Applied Physics Y1 - 1993 A1 - Misiakos, Konstantinos A1 - Tsamakis, Dimitris AB - The intrinsic carrier density in silicon has been measured by a novel technique based on low‐frequency capacitance measurements of a p+‐i‐n+ diode biased in high injection. The major advantage of the method is its insensitivity to uncertainties regarding the exact values of the carrier mobilities, the recombination parameters, and the doping density. The intrinsic carrier density was measured in the temperature range from 78 to 340 K. At 300 K the value of ni was found to be (9.7±0.1)×10^9 cm−3. VL - 74 CP - 5 J1 - J. Appl. Phys. KW - Misiakos93 ER - TY - JOUR T1 - Limiting Efficiency of Silicon Solar Cells JF - IEEE TRANSACTIONS ON ELECTRON DEVICES Y1 - 1984 A1 - T. Tiedje A1 - E Yablonovich A1 - G.D. Cody A1 - B.G. Brooks VL - ED-31 N1 -
KW - Tiedje1984 ER - TY - ABST T1 - The Relationship Between Resistivity and Dopant Density for Phosphorus- and Boron-Doped Silicon Y1 - 1981 A1 - W R Thurber A1 - Mattis A1 - Liu A1 - Filliben PB - U.S. Department of Commerce National Bureau of Standards N1 -
KW - Thurber1981 ER - TY - JOUR T1 - Resistivity-Dopant Density Relationship for Boron-Doped Silicon JF - Journal of The Electrochemical Society Y1 - 1980 A1 - W R Thurber A1 - R. L. Mattis A1 - Y. M. Liu A1 - J. J. Filliben KW - boron KW - electrical resistivity KW - Hall effect KW - hole density KW - semiconductor doping KW - SILICON PB - ECS VL - 127 UR - http://link.aip.org/link/?JES/127/2291/1 N1 -
KW - Thurber1980boron ER - TY - JOUR T1 - Resistivity-Dopant Density Relationship for Phosphorus-Doped Silicon JF - Journal of The Electrochemical Society Y1 - 1980 A1 - W R Thurber A1 - R. L. Mattis A1 - Y. M. Liu A1 - J. J. Filliben KW - density KW - electrical resistivity KW - electron mobility KW - Hall effect KW - neutron activation analysis KW - phosphorus KW - photometry KW - semiconductor doping KW - SILICON PB - ECS VL - 127 UR - http://link.aip.org/link/?JES/127/1807/1 KW - Thurber1980phos ER - TY - JOUR T1 - A Thallous Sulphide Photo EMF Cell JF - Journal Opt. Society of America Y1 - 1939 A1 - Nix, F.C. A1 - Treptwo, A.W. VL - 29 N1 -
KW - Nix1939 ER -