TY - JOUR
T1 - Isotextured Silicon Solar Cell Analysis and Modeling 1: Optics
JF - IEEE Journal of Photovoltaics
Y1 - 2012
A1 - Baker-Finch, Simeon C.
A1 - McIntosh, Keith R.
A1 - Terry, Mason L.
VL - 2
CP - 4
J1 - IEEE J. Photovoltaics
KW - 533
ER -
TY - Generic
T1 - World’s Highest Efficiency Triple-junction Solar Cells Fabricated by Inverted Layers Transfer Process
T2 - 35 IEEE Photovoltaic Specialist Conference
Y1 - 2010
A1 - Takamoto, T.
A1 - Agui, T.
A1 - Yoshida, A.
A1 - Nakaido, K.
A1 - Juso, H.
A1 - Sasaki, K.
A1 - Nakamura, K.
A1 - Yamaguchi, H.
A1 - Kodama, T.
A1 - Washio, H.
A1 - Imazumi, M.
A1 - Takahashi, M.
JA - 35 IEEE Photovoltaic Specialist Conference
CY - Honolulu HI, USA
N1 -
KW - Takamoto2010
ER -
TY - JOUR
T1 - Photographic surveying of minority carrier diffusion length in polycrystalline silicon solar cells by electroluminescence
JF - Applied Physics Letters
Y1 - 2005
A1 - Takashi Fuyuki
A1 - Hayato Kondo
A1 - Tsutomu Yamazaki
A1 - Yu Takahashi
A1 - Yukiharu Uraoka
KW - carrier lifetime
KW - electroluminescence
KW - elemental semiconductors
KW - MINORITY CARRIERS
KW - SILICON
KW - solar cells
PB - AIP
VL - 86
UR - http://link.aip.org/link/?APL/86/262108/1
KW - Fuyuki2005
ER -
TY - JOUR
T1 - Accurate measurements of the silicon intrinsic carrier density from 78 to 340 K
JF - Journal of Applied Physics
Y1 - 1993
A1 - Misiakos, Konstantinos
A1 - Tsamakis, Dimitris
AB - The intrinsic carrier density in silicon has been measured by a novel technique based on low‐frequency capacitance measurements of a p+‐i‐n+ diode biased in high injection. The major advantage of the method is its insensitivity to uncertainties regarding the exact values of the carrier mobilities, the recombination parameters, and the doping density. The intrinsic carrier density was measured in the temperature range from 78 to 340 K. At 300 K the value of ni was found to be (9.7±0.1)×10^9 cm−3.
VL - 74
CP - 5
J1 - J. Appl. Phys.
KW - Misiakos93
ER -
TY - JOUR
T1 - Limiting Efficiency of Silicon Solar Cells
JF - IEEE TRANSACTIONS ON ELECTRON DEVICES
Y1 - 1984
A1 - T. Tiedje
A1 - E Yablonovich
A1 - G.D. Cody
A1 - B.G. Brooks
VL - ED-31
N1 -
KW - Tiedje1984
ER -
TY - ABST
T1 - The Relationship Between Resistivity and Dopant Density for Phosphorus- and Boron-Doped Silicon
Y1 - 1981
A1 - W R Thurber
A1 - Mattis
A1 - Liu
A1 - Filliben
PB - U.S. Department of Commerce National Bureau of Standards
N1 -
KW - Thurber1981
ER -
TY - JOUR
T1 - Resistivity-Dopant Density Relationship for Boron-Doped Silicon
JF - Journal of The Electrochemical Society
Y1 - 1980
A1 - W R Thurber
A1 - R. L. Mattis
A1 - Y. M. Liu
A1 - J. J. Filliben
KW - boron
KW - electrical resistivity
KW - Hall effect
KW - hole density
KW - semiconductor doping
KW - SILICON
PB - ECS
VL - 127
UR - http://link.aip.org/link/?JES/127/2291/1
N1 -
KW - Thurber1980boron
ER -
TY - JOUR
T1 - Resistivity-Dopant Density Relationship for Phosphorus-Doped Silicon
JF - Journal of The Electrochemical Society
Y1 - 1980
A1 - W R Thurber
A1 - R. L. Mattis
A1 - Y. M. Liu
A1 - J. J. Filliben
KW - density
KW - electrical resistivity
KW - electron mobility
KW - Hall effect
KW - neutron activation analysis
KW - phosphorus
KW - photometry
KW - semiconductor doping
KW - SILICON
PB - ECS
VL - 127
UR - http://link.aip.org/link/?JES/127/1807/1
KW - Thurber1980phos
ER -
TY - JOUR
T1 - A Thallous Sulphide Photo EMF Cell
JF - Journal Opt. Society of America
Y1 - 1939
A1 - Nix, F.C.
A1 - Treptwo, A.W.
VL - 29
N1 -
KW - Nix1939
ER -