TY - JOUR
T1 - Isotextured Silicon Solar Cell Analysis and Modeling 1: Optics
JF - IEEE Journal of Photovoltaics
Y1 - 2012
A1 - Baker-Finch, Simeon C.
A1 - McIntosh, Keith R.
A1 - Terry, Mason L.
VL - 2
CP - 4
J1 - IEEE J. Photovoltaics
KW - 533
ER -
TY - CONF
T1 - OPAL 2: Rapid optical simulation of silicon solar cells
T2 - 2012 IEEE 38th Photovoltaic Specialists Conference (PVSC)2012 38th IEEE Photovoltaic Specialists Conference
Y1 - 2012
A1 - McIntosh, Keith R.
A1 - Baker-Finch, Simeon C.
AB - The freeware program OPAL 2 computes the optical losses associated with the front surface of a Si solar cell. It calculates the losses for any angle of incidence within seconds, where the short computation time is achieved by decoupling the ray tracing from the Fresnel equations. Amongst other morphologies, OPAL 2 can be used to assess the random-pyramid texture of c-Si solar cells, or the `isotexture' of mc-Si solar cells, and to determine (i) the optimal thickness of an antireflection coating with or without encapsulation, (ii) the impact of imperfect texturing, such as non-ideal texture angles, over-etched isotexture, and flat regions, and (iii) the subsequent 1D generation profile in the Si. This paper describes the approach and assumptions employed by OPAL 2 and presents examples that demonstrate the dependence of optical losses on texture quality and incident angle.
JA - 2012 IEEE 38th Photovoltaic Specialists Conference (PVSC)2012 38th IEEE Photovoltaic Specialists Conference
PB - IEEE
CY - Austin, TX, USA
SN - 978-1-4673-0064-3
KW - 532
ER -
TY - CONF
T1 - Gen III: Improved Performance at Lower Cost
T2 - 35th IEEE Photovoltaic Specialists Conference
Y1 - 2010
A1 - Peter J. Cousins
A1 - David D. Smith
A1 - Hsin-Chiao Luan
A1 - Jane Manning
A1 - Tim D. Dennis
A1 - Ann Waldhaue
A1 - Karen E. Wilson
A1 - Gabriel Harley
A1 - William P. Mulligan
JA - 35th IEEE Photovoltaic Specialists Conference
PB - IEEE
CY - Honolulu, Hawaii
N1 -
KW - Cousins2010
ER -
TY - Generic
T1 - Low Cost, High Volume Production of >22% Efficiency Silicon Solar Cells
T2 - 22nd European Photovoltaic Specialist Conference
Y1 - 2007
A1 - De Ceuster, D.
A1 - P. Cousins
A1 - D. Rose
A1 - M. Cudzinovic
A1 - W. Mulligan
JA - 22nd European Photovoltaic Specialist Conference
N1 -
KW - DeCeuster2007
ER -
TY - JOUR
T1 - A review and comparison of different methods to determine the series resistance of solar cells
JF - Solar Energy Materials and Solar Cells
Y1 - 2007
A1 - PYSCH, D
A1 - A. Mette
A1 - Stefan W. Glunz
VL - 91
N1 -
KW - Pysch2007
ER -
TY - JOUR
T1 - Series resistance characterization of industrial silicon solar cells with screen-printed contacts using hotmelt paste
JF - Progress in Photovoltaics: Research and Applications
Y1 - 2007
A1 - A. Mette
A1 - et al
VL - 15
N1 -
KW - Mette2007
ER -
TY - CONF
T1 - Low Light Performance of Mono-Crystalline Silicon Solar Cells
T2 - 4th World Conference on Photovoltaic Energy Conference
Y1 - 2006
A1 - Gabriela Bunea
A1 - Karen Wilson
A1 - Yevgeny Meydbray
A1 - Matthew Campbell
A1 - Denis De Ceuster
JA - 4th World Conference on Photovoltaic Energy Conference
CY - Waikoloa, HI
UR - http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=4059885&tag=1
KW - bunea_low_2006
ER -
TY - Generic
T1 - Dependence of aluminium alloying on solar cell processing conditions
T2 - 13th Workshop on Crystalline Silicon Solar Cell Materials and Processes
Y1 - 2003
A1 - Christiana B Honsberg
A1 - Anwar, K.K.
A1 - Mehrvarz, H.R.
A1 - Cotter, J.E.
A1 - Wenham, S.R.
JA - 13th Workshop on Crystalline Silicon Solar Cell Materials and Processes
N1 -
KW - Honsberg2003
ER -
TY - JOUR
T1 - On the use of a bias-light correction for trapping effects in photoconductance-based lifetime measurements of silicon
JF - Journal of Applied Physics
Y1 - 2001
A1 - Daniel Macdonald
A1 - Ronald A. Sinton
A1 - Andrés Cuevas
KW - CARRIER DENSITY
KW - carrier lifetime
KW - electron traps
KW - electron-hole recombination
KW - elemental semiconductors
KW - hole traps
KW - photoconductivity
KW - SILICON
KW - solar cells
PB - AIP
VL - 89
UR - http://link.aip.org/link/?JAP/89/2772/1
KW - Macdonald2001
ER -
TY - Generic
T1 - The Influence of Edge Recombination on a Solar Cell’s IV Curve
T2 - 16th European Photovoltaic Solar Energy Conference
Y1 - 2000
A1 - McIntosh, K. R.
A1 - Christiana B Honsberg
JA - 16th European Photovoltaic Solar Energy Conference
N1 -
KW - McIntosh2000
ER -
TY - Generic
T1 - Outdoor measurement of 28% efficiency for a mini-concentrator module
T2 - National Center for Photovoltaics Program Review Meeting
Y1 - 2000
A1 - O’Neil, M.J.
A1 - McDanal, A.J.
JA - National Center for Photovoltaics Program Review Meeting
CY - Denver, USA
N1 -
KW - ONeil2000
ER -
TY - JOUR
T1 - Solar Electricity
Y1 - 2000
A1 - Tomas Markvart
PB - John Wiley & Sons
CY - Chichester, England
SN - 0-471-98853-7
UR - http://www.amazon.com/Solar-Electricity-2nd-Tomas-Markvart/dp/0471988537/ref=sr_1_1?s=books&ie=UTF8&qid=1279647029&sr=1-1
N1 -
1. Electricity from the Sun
2. Solar Radiation
3. Solar Cells
4. Photovoltaic System Engineering
5. Applications
6. Environmental Impacts of Photovoltaics
7. Advanced and Special Topics
Index
KW - Markvart2000 ER - TY - Generic T1 - Isotropic texturing of multicrystalline silicon wafers with acidic texturing solutions T2 - Twenty Sixth IEEE Photovoltaic Specialists Conference Y1 - 1997 A1 - Einhaus, R. A1 - Vazsonyi, E. A1 - Szlufcik, J. A1 - Nijs, J. A1 - Mertens, R. JA - Twenty Sixth IEEE Photovoltaic Specialists Conference CY - New York, NY, USA N1 -This paper presents the latest versions of several models developed by the authors to predict short time-step solar energy and daylight availability quantities needed by energy system modelers or building designers. The modeled quantities are global, direct and diffuse daylight illuminance, diffuse irradiance and illuminance impinging on tilted surfaces of arbitrary orientation, sky zenith luminance and sky luminance angular distribution. All models are original except for the last one which is extrapolated from current standards. All models share a common operating structure and a common set of input data: Hourly (or higher frequency) direct (or diffuse) and global irradiance plus surface dew point temperature. Key experimental observations leading to model development are briefly reviewed. Comprehensive validation results are presented. Model accuracy, assessed in terms of root-mean-square and mean bias errors, is analyzed both as a function of insolation conditions and site climatic environment.
VL - 44 UR - http://www.sciencedirect.com/science/article/B6V50-497T9KG-S0/2/034fdf1417cea3a44d8509fe805f679e N1 -New carrier mobility data for both arsenic- and boron-doped silicon are presented in the high doping range. The data definitely show that the electron mobility in As-doped silicon is significantly lower than in P-doped silicon for carrier concentrations higher than 1019 cm-3. By integrating these data with those previously published, empirical relationships able to model the carrier mobility against carrier concentration in the whole experimental range examined to date (about eight decades in concentration) for As-, P-, and B-doped silicon are derived. Different parameters in the expression for the n-type dopants provide differentiation between the electron mobility in As- and P-doped silicon. Finally, it is shown that these new expressions, once implemented in the {SUPREM} {II} process simulator, lead to reduced errors in the simulation of the sheet resistance values
VL - ED-30 N1 -Copyright 1983, {IEE}
KW - Masetti1983 ER - TY - ABST T1 - The Relationship Between Resistivity and Dopant Density for Phosphorus- and Boron-Doped Silicon Y1 - 1981 A1 - W R Thurber A1 - Mattis A1 - Liu A1 - Filliben PB - U.S. Department of Commerce National Bureau of Standards N1 -