TY - JOUR T1 - Solar Cell Device Physics Y1 - 2010 A1 - Stephen J. Fonash PB - Academic Press SN - 978-0-12-374774-7 UR - http://www.amazon.com/Solar-Cell-Device-Physics-Second/dp/0123747740/ref=sr_1_1?s=books&ie=UTF8&qid=1279652144&sr=1-1 N1 -

1. Introduction

2. Material Properties and Device Physics Basic to Photovoltaics

3. Structures, Materials, and Scale

4. Homojunction Solar Cells

5. Semiconductor-semiconductor Heterojunction Solar Cells

6. Surface-barrier Solar Cells

7. Dye-sensitized Solar Cells

Appendicies

KW - Fonash2009 ER - TY - JOUR T1 - Photographic surveying of minority carrier diffusion length in polycrystalline silicon solar cells by electroluminescence JF - Applied Physics Letters Y1 - 2005 A1 - Takashi Fuyuki A1 - Hayato Kondo A1 - Tsutomu Yamazaki A1 - Yu Takahashi A1 - Yukiharu Uraoka KW - carrier lifetime KW - electroluminescence KW - elemental semiconductors KW - MINORITY CARRIERS KW - SILICON KW - solar cells PB - AIP VL - 86 UR - http://link.aip.org/link/?APL/86/262108/1 KW - Fuyuki2005 ER - TY - JOUR T1 - 19.8% efficient "honeycomb" textured multicrystalline and 24.4% monocrystalline silicon solar cells JF - Applied Physics Letters Y1 - 1998 A1 - Jianhua Zhao A1 - Aihua Wang A1 - Martin A Green A1 - Francesca Ferrazza KW - elemental semiconductors KW - SILICON KW - solar cells KW - surface texture PB - AIP VL - 73 UR - http://link.aip.org/link/?APL/73/1991/1 KW - Zhao1991 ER - TY - Generic T1 - Surface texturing using reactive ion etching for multicrystalline silicon solar cells T2 - Twenty Sixth IEEE Photovoltaic Specialists Conference Y1 - 1997 A1 - Fukui, K. A1 - Inomata, Y. A1 - Shirasawa, K. JA - Twenty Sixth IEEE Photovoltaic Specialists Conference CY - New York, NY, USA N1 -
KW - Fukui1997 ER - TY - BOOK T1 - QED : The Strange Theory of Light and Matter T2 - Princeton University Press, Princeton NJ Y1 - 1985 A1 - Feynman, R. P. JA - Princeton University Press, Princeton NJ N1 -
KW - Feynman1985 ER - TY - JOUR T1 - On Phosphorus Diffusion in Silicon JF - On Phosphorus Diffusion in Silicon Y1 - 1983 A1 - S.M. Hu A1 - P. Fahey A1 - P. Sutton VL - 54 N1 -
KW - Hu1983-2 ER - TY - ABST T1 - The Relationship Between Resistivity and Dopant Density for Phosphorus- and Boron-Doped Silicon Y1 - 1981 A1 - W R Thurber A1 - Mattis A1 - Liu A1 - Filliben PB - U.S. Department of Commerce National Bureau of Standards N1 -
KW - Thurber1981 ER - TY - JOUR T1 - Resistivity-Dopant Density Relationship for Boron-Doped Silicon JF - Journal of The Electrochemical Society Y1 - 1980 A1 - W R Thurber A1 - R. L. Mattis A1 - Y. M. Liu A1 - J. J. Filliben KW - boron KW - electrical resistivity KW - Hall effect KW - hole density KW - semiconductor doping KW - SILICON PB - ECS VL - 127 UR - http://link.aip.org/link/?JES/127/2291/1 N1 -
KW - Thurber1980boron ER - TY - JOUR T1 - Resistivity-Dopant Density Relationship for Phosphorus-Doped Silicon JF - Journal of The Electrochemical Society Y1 - 1980 A1 - W R Thurber A1 - R. L. Mattis A1 - Y. M. Liu A1 - J. J. Filliben KW - density KW - electrical resistivity KW - electron mobility KW - Hall effect KW - neutron activation analysis KW - phosphorus KW - photometry KW - semiconductor doping KW - SILICON PB - ECS VL - 127 UR - http://link.aip.org/link/?JES/127/1807/1 KW - Thurber1980phos ER - TY - JOUR T1 - Application of the superposition principle to solar-cell analysis JF - IEEE Transactions on Electron Devices Y1 - 1979 A1 - F.A. Lindholm A1 - Fossum, J.G. A1 - E.L. Burgess AB - The principle of superposition is used to derive from fundamentals the widely used shifting approximation that the current-voltage characteristic of an illuminated solar cell is the dark current-voltage characteristic shifted by the short-circuit photocurrent. Thus the derivation requires the linearity of the boundary-value problems that underlie the electrical characteristics. This focus on linearity defines the conditions that must hold if the shifting approximation is to apply with good accuracy. In this regard, if considerable photocurrent and considerable dark thermal recombination current both occur within the junction space-charge region, then the shifting approximation is invalid. From a rigorous standpoint, it is invalid also if low-injection concentrations of holes and electrons are not maintained throughout the quasi-neutral regions. The presence of sizable series resistance also invalidates the shifting approximation. Methods of analysis are presented to treat these cases for which shifting is not strictly valid. These methods are based on an understanding of the physics of cell operation. This understanding is supported by laboratory experiments and by exact computer solution of the relevant boundary-value problems. For the case of high injection in the base region, the method of analysis employed accurately yields the dependence of the open-circuit voltage on the short-circuit current (or the illumination level). VL - 26 KW - Lindholm1979 ER - TY - JOUR T1 - Physical operation of back-surface-field silicon solar cells JF - IEEE Transactions on Electron Devices Y1 - 1977 A1 - Fossum, J.G. AB -

Using exact numerical solutions of carrier transport in the back-surface-field silicon solar cell both for guidance and for verification, the physical mechanisms effective in this device are identified and explained. Concise analytical descriptions of the cell performance, based on the pertinent device physics, are formulated.

VL - 24 KW - Fossum1977 ER - TY - JOUR T1 - A New Silicon P-N Junction Photocell for Converting Solar Radiation into Electrical Power JF - Journal of Applied Physics Y1 - 1954 A1 - Chapin, D.M. A1 - Fuller, C.S. A1 - Pearson, G.L. VL - 25 N1 -
KW - Chapin1954 ER - TY - JOUR T1 - On a New Form of Selenium Photocell JF - American J. of Science Y1 - 1883 A1 - Fritts, C.E. VL - 26 N1 -
KW - Fritts1883 ER -