TY - JOUR T1 - Improved quantitative description of Auger recombination in crystalline silicon JF - Physical Review B Y1 - 2012 A1 - Richter, Armin A1 - Stefan W. Glunz A1 - Werner, Florian A1 - Jan Schmidt A1 - Andrés Cuevas AB - An accurate quantitative description of the Auger recombination rate in silicon as a function of the dopant density and the carrier injection level is important to understand the physics of this fundamental mechanism and to predict the physical limits to the performance of silicon based devices. Technological progress has permitted a near suppression of competing recombination mechanisms, both in the bulk of the silicon crystal and at the surfaces. This, coupled with advanced characterization techniques, has led to an improved determination of the Auger recombination rate, which is lower than previously thought. In this contribution we present a systematic study of the injection-dependent carrier recombination for a broad range of dopant concentrations of high-purity n-type and p-type silicon wafers passivated with state-of-the-art dielectric layers of aluminum oxide or silicon nitride. Based on these measurements, we develop a general parametrization for intrinsic recombination in crystalline silicon at 300 K consistent with the theory of Coulomb-enhanced Auger and radiative recombination. Based on this improved description we are able to analyze physical aspects of the Auger recombination mechanism such as the Coulomb enhancement. VL - 86 CP - 16 J1 - Phys. Rev. B KW - Richter2012 ER - TY - CONF T1 - Gen III: Improved Performance at Lower Cost T2 - 35th IEEE Photovoltaic Specialists Conference Y1 - 2010 A1 - Peter J. Cousins A1 - David D. Smith A1 - Hsin-Chiao Luan A1 - Jane Manning A1 - Tim D. Dennis A1 - Ann Waldhaue A1 - Karen E. Wilson A1 - Gabriel Harley A1 - William P. Mulligan JA - 35th IEEE Photovoltaic Specialists Conference PB - IEEE CY - Honolulu, Hawaii N1 -
KW - Cousins2010 ER - TY - JOUR T1 - Applied Photovoltaics Y1 - 2007 A1 - Wenham, S.R. A1 - Martin A Green A1 - Watt, M. E. A1 - R. Corkish AB -
PB - Earthscan CY - London, UK SN - 1-84407-401-3 UR - http://www.amazon.com/Applied-Photovoltaics-Stuart-R-Wenham/dp/1844074013/ref=sr_1_1?ie=UTF8&s=books&qid=1279558328&sr=8-1 N1 -

Introduction

1. The Characteristics of Sunlight

2. Semiconductors and P-N Junctions

3. The Behavior of Solar Cells

4. Cell Properties and Design

5. PV Cell Interconnection and Module Fabrication

6. Stand-Alone Photovoltaic System Components

7. Designing Stand-Alone Photovoltaic Systems

8. Specific Purpose Photovoltaic Applications

9. Remote Area Power Supply Systems

10. Grid-Connected Photovoltaic Systems

11. Photovoltaic Water Pumping System Components

12. PV Water Pumping System Design

Appendicies

Index

KW - Wenham2007 ER - TY - Generic T1 - Low Cost, High Volume Production of >22% Efficiency Silicon Solar Cells T2 - 22nd European Photovoltaic Specialist Conference Y1 - 2007 A1 - De Ceuster, D. A1 - P. Cousins A1 - D. Rose A1 - M. Cudzinovic A1 - W. Mulligan JA - 22nd European Photovoltaic Specialist Conference N1 -
KW - DeCeuster2007 ER - TY - CONF T1 - Low Light Performance of Mono-Crystalline Silicon Solar Cells T2 - 4th World Conference on Photovoltaic Energy Conference Y1 - 2006 A1 - Gabriela Bunea A1 - Karen Wilson A1 - Yevgeny Meydbray A1 - Matthew Campbell A1 - Denis De Ceuster JA - 4th World Conference on Photovoltaic Energy Conference CY - Waikoloa, HI UR - http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=4059885&tag=1 KW - bunea_low_2006 ER - TY - Generic T1 - Dependence of aluminium alloying on solar cell processing conditions T2 - 13th Workshop on Crystalline Silicon Solar Cell Materials and Processes Y1 - 2003 A1 - Christiana B Honsberg A1 - Anwar, K.K. A1 - Mehrvarz, H.R. A1 - Cotter, J.E. A1 - Wenham, S.R. JA - 13th Workshop on Crystalline Silicon Solar Cell Materials and Processes N1 -
KW - Honsberg2003 ER - TY - JOUR T1 - General parameterization of Auger recombination in crystalline silicon JF - Journal of Applied Physics Y1 - 2002 A1 - Mark J Kerr A1 - Andrés Cuevas KW - Auger effect KW - carrier lifetime KW - electron-hole recombination KW - elemental semiconductors KW - SILICON PB - AIP VL - 91 UR - http://link.aip.org/link/?JAP/91/2473/1 KW - Kerr2002 ER - TY - JOUR T1 - Generalized analysis of quasi-steady-state and transient decay open circuit voltage measurements JF - Journal of Applied Physics Y1 - 2002 A1 - Mark J Kerr A1 - Andrés Cuevas A1 - Ronald A. Sinton AB - The current–voltage characteristics of solar cells and photodiodes can be determined by measuring the open-circuit voltage as a function of a slowly varying light intensity. This article presents a detailed theoretical analysis and interpretation of such quasi-steady-state Voc measurements (QssVoc). The ability of this analysis to accurately obtain the true steady-state device characteristics even in the case of high lifetime, high resistivity silicon devices is demonstrated experimentally. The QssVoc technique can be used to determine the minority carrier lifetime, and the new generalized analysis is required to do this accurately. An important outcome is that solar cell and diode device characteristics can be obtained from measurements of either the photoconductance or the open-circuit voltage, even using transient techniques. VL - 91 N1 -
KW - Kerr2002 ER - TY - JOUR T1 - High performance light trapping textures for monocrystalline silicon solar cells JF - Solar Energy Materials and Solar Cells Y1 - 2001 A1 - Campbell, Patrick A1 - Martin A Green AB - Two novel texture schemes for the front of a c-Si silicon wafer solar cell are presented. The “bipyramid” texture is of two inverted pyramids of similar sizes laid out in alternating order. The “patch” texture uses a checkerboard layout of blocks of parallel grooves, with the grooves of alternating blocks perpendicularly oriented to each other. We estimate that these textures, which almost fully trap light for the first six passes through the substrate, can deliver better optical performance than the standard inverted pyramid texture, especially in narrow-band applications. VL - 65 CP - 1-4 J1 - Solar Energy Materials and Solar Cells KW - Campbell2001 ER - TY - Generic T1 - A New Generalized Detailed Balance Formulation to Calculate Solar Cell Efficiency Limits T2 - 17th European Photovoltaic Solar Energy Conference Y1 - 2001 A1 - Christiana B Honsberg A1 - R. Corkish A1 - S. P. Bremner JA - 17th European Photovoltaic Solar Energy Conference N1 -
KW - Honsberg2001 ER - TY - JOUR T1 - On the use of a bias-light correction for trapping effects in photoconductance-based lifetime measurements of silicon JF - Journal of Applied Physics Y1 - 2001 A1 - Daniel Macdonald A1 - Ronald A. Sinton A1 - Andrés Cuevas KW - CARRIER DENSITY KW - carrier lifetime KW - electron traps KW - electron-hole recombination KW - elemental semiconductors KW - hole traps KW - photoconductivity KW - SILICON KW - solar cells PB - AIP VL - 89 UR - http://link.aip.org/link/?JAP/89/2772/1 KW - Macdonald2001 ER - TY - CONF T1 - A Quasi-Steady-State Open-Circuit Voltage Method for Solar Cell Characterization T2 - 16th European Photovoltaic Solar Energy Conference Y1 - 2000 A1 - Sinton, R.A. A1 - Andrés Cuevas JA - 16th European Photovoltaic Solar Energy Conference CY - Glasgow, Scotland KW - Sinton2000 ER - TY - CONF T1 - Simulating Electron-Beam-Induced Current Profiles Across p-n Junctions T2 - Proceedings of the 16h European Solar Energy Conference Y1 - 2000 A1 - R. Corkish A1 - Luke, K. L. A1 - Pietro P Altermatt A1 - G. Heiser JA - Proceedings of the 16h European Solar Energy Conference PB - James and James CY - Glasgow UK SN - 9781902916187 N1 -
KW - Corkish2000 ER - TY - Generic T1 - Simulating Electron-Beam-Induced Current Profiles Across p-n Junctions T2 - 16h European Solar Energy Conference Y1 - 2000 A1 - R. Corkish A1 - Luke, K. L. A1 - Pietro P Altermatt A1 - G. Heiser JA - 16h European Solar Energy Conference N1 -
KW - Corkish2000 ER - TY - JOUR T1 - Preparation of Zinc Selenide Thin Films by Electrodeposition Technique for Solar Cell Applications JF - physica status solidi (a) Y1 - 1997 A1 - Chandramohan, R. A1 - Sanjeeviraja, C. A1 - Mahalingam, T. VL - 163 CP - 2 J1 - phys. stat. sol. (a) KW - Chandramohan1997 ER - TY - JOUR T1 - Contactless determination of current–voltage characteristics and minority-carrier lifetimes in semiconductors from quasi-steady-state photoconductance data JF - Applied Physics Letters Y1 - 1996 A1 - Ronald A. Sinton A1 - Andrés Cuevas KW - carrier lifetime KW - CV CHARACTERISTIC KW - MINORITY CARRIERS KW - photoconductivity KW - SEMICONDUCTOR MATERIALS KW - SILICON KW - STEADY – STATE CONDITIONS PB - AIP VL - 69 UR - http://link.aip.org/link/?APL/69/2510/1 KW - Sinton1996 ER - TY - JOUR T1 - Texturing of polycrystalline silicon JF - Solar Energy Materials and Solar Cells Y1 - 1996 A1 - M. J. Stocks A1 - A. J. Carr A1 - Andrew W Blakers VL - 40 UR - http://www.sciencedirect.com/science/article/B6V51-3VTFK7T-57/2/eb36bb8dfafef0de9e83d2f685caf541 KW - Stocks1996 ER - TY - JOUR T1 - 7000 High Efficiency Cells for a Dream JF - Progress in Photovoltaics: Research and Applications Y1 - 1994 A1 - Verlinden, P.J. A1 - Richard M Swanson A1 - Crane, R.A. VL - 2 N1 -
KW - Verlinden1994 ER - TY - Generic T1 - 18% efficient polycrystalline silicon solar cells T2 - Twenty First IEEE Photovoltaic Specialists Conference Y1 - 1990 A1 - Narayanan, S. A1 - Zolper, J. A1 - Yun, F. A1 - Wenham, S.R. A1 - A. B. Sproul A1 - Chong,C.M. A1 - Martin A Green JA - Twenty First IEEE Photovoltaic Specialists Conference VL - 1 N1 -
KW - Narayanan1990 ER - TY - JOUR T1 - Analysis of the interaction of a laser pulse with a silicon wafer: Determination of bulk lifetime and surface recombination velocity JF - Journal of Applied Physics Y1 - 1987 A1 - Keung L. Luke A1 - Li-Jen Cheng KW - carrier lifetime KW - LASERRADIATION HEATING KW - MINORITY CARRIERS KW - RECOMBINATION KW - SILICON KW - SILICON SOLAR CELLS KW - SURFACE PROPERTIES KW - THEORETICAL DATA KW - VELOCITY KW - WAFERS PB - AIP VL - 61 UR - http://link.aip.org/link/?JAP/61/2282/1 KW - Luke1987 ER - TY - JOUR T1 - Light trapping properties of pyramidally textured surfaces JF - Journal of Applied Physics Y1 - 1987 A1 - Campbell, Patrick A1 - Martin A Green VL - 62 CP - 1 J1 - J. Appl. Phys. KW - Campbell1987 ER - TY - JOUR T1 - Limiting Efficiency of Silicon Solar Cells JF - IEEE TRANSACTIONS ON ELECTRON DEVICES Y1 - 1984 A1 - T. Tiedje A1 - E Yablonovich A1 - G.D. Cody A1 - B.G. Brooks VL - ED-31 N1 -
KW - Tiedje1984 ER - TY - JOUR T1 - Intensity Enhancement in Textured Optical Sheets for Solar Cells JF - IEEE Transactions on Electron Devices Y1 - 1982 A1 - E Yablonovich A1 - G.D. Cody VL - ED-29 N1 -
KW - Yablonovich1982 ER - TY - ABST T1 - United States Patent: 4137123 - Texture etching of silicon: method Y1 - 1979 A1 - William L. Bailey A1 - Michael G. Coleman A1 - Cynthia B. Harris A1 - Israel A. Lesk AB -

A surface etchant for silicon comprising an anisotropic etchant containing silicon is disclosed. The etchant provides a textured surface of randomly spaced and sized pyramids on a silicon surface. It is particularly useful in reducing the reflectivity of solar cell surfaces.

UR - http://patft.uspto.gov/netacgi/nph-Parser?Sect1=PTO2&Sect2=HITOFF&p=1&u=%2Fnetahtml%2FPTO%2Fsearch-bool.html&r=32&f=G&l=50&co1=AND&d=PTXT&s1=4,137,123&OS=4,137,123&RS=4,137,123 KW - Bailey1979 ER - TY - JOUR T1 - Electronic processes at grain boundaries in polycrystalline semiconductors under optical illumination JF - IEEE Transactions on Electron Devices Y1 - 1977 A1 - Card, H.C. A1 - Yang, E.S. VL - ED-24 N1 -
KW - Card1977 ER - TY - JOUR T1 - The absorption of radiation in solar stills JF - Solar Energy Y1 - 1969 A1 - P.I. Cooper VL - 12 UR - http://www.sciencedirect.com/science/article/B6V50-497BD6C-27/2/a4ca2069fe8c8b0cfa571de016d93cc5 N1 -
KW - Cooper1969 ER - TY - JOUR T1 - Nondestructive determination of thickness and refractive index of transparent films JF - IBM Journal of Research Devices Y1 - 1964 A1 - W. A. Pliskin A1 - E. E. Conrad AB -

A simple nondestructive method of measuring the refractive index and thickness of transparent films on reflective substrates has been developed. The technique involves the use of a microscope equipped with a monochromatic filter on the objective and a stage that can be rotated so that the reflected light is observed at various angles. The film thickness, d, is given by d = {[ΔNλ]/[2µ(cos} r2, - cos r1)], where λ is the wavelength of the filtered light, µ is the refractive index, and {ΔN} is the number of fringes observed between the angles of refraction r2, and r1.

VL - 8 UR - http://portal.acm.org/citation.cfm?id=1662391 N1 -
KW - Pliskin1964 ER - TY - JOUR T1 - A New Silicon P-N Junction Photocell for Converting Solar Radiation into Electrical Power JF - Journal of Applied Physics Y1 - 1954 A1 - Chapin, D.M. A1 - Fuller, C.S. A1 - Pearson, G.L. VL - 25 N1 -
KW - Chapin1954 ER - TY - JOUR T1 - Ein neues Verfahren zur Messung der Kristallisationsgeschwindigheit der Metalle JF - Zeitschrift für physikalische Chemie Y1 - 1918 A1 - Czochralski, J. VL - 92 KW - Czochralski1918 ER -