TY - JOUR
T1 - Improved quantitative description of Auger recombination in crystalline silicon
JF - Physical Review B
Y1 - 2012
A1 - Richter, Armin
A1 - Stefan W. Glunz
A1 - Werner, Florian
A1 - Jan Schmidt
A1 - Andrés Cuevas
AB - An accurate quantitative description of the Auger recombination rate in silicon as a function of the dopant density and the carrier injection level is important to understand the physics of this fundamental mechanism and to predict the physical limits to the performance of silicon based devices. Technological progress has permitted a near suppression of competing recombination mechanisms, both in the bulk of the silicon crystal and at the surfaces. This, coupled with advanced characterization techniques, has led to an improved determination of the Auger recombination rate, which is lower than previously thought. In this contribution we present a systematic study of the injection-dependent carrier recombination for a broad range of dopant concentrations of high-purity n-type and p-type silicon wafers passivated with state-of-the-art dielectric layers of aluminum oxide or silicon nitride. Based on these measurements, we develop a general parametrization for intrinsic recombination in crystalline silicon at 300 K consistent with the theory of Coulomb-enhanced Auger and radiative recombination. Based on this improved description we are able to analyze physical aspects of the Auger recombination mechanism such as the Coulomb enhancement.
VL - 86
CP - 16
J1 - Phys. Rev. B
KW - Richter2012
ER -
TY - CONF
T1 - Gen III: Improved Performance at Lower Cost
T2 - 35th IEEE Photovoltaic Specialists Conference
Y1 - 2010
A1 - Peter J. Cousins
A1 - David D. Smith
A1 - Hsin-Chiao Luan
A1 - Jane Manning
A1 - Tim D. Dennis
A1 - Ann Waldhaue
A1 - Karen E. Wilson
A1 - Gabriel Harley
A1 - William P. Mulligan
JA - 35th IEEE Photovoltaic Specialists Conference
PB - IEEE
CY - Honolulu, Hawaii
N1 -
KW - Cousins2010
ER -
TY - JOUR
T1 - Applied Photovoltaics
Y1 - 2007
A1 - Wenham, S.R.
A1 - Martin A Green
A1 - Watt, M. E.
A1 - R. Corkish
AB -
PB - Earthscan
CY - London, UK
SN - 1-84407-401-3
UR - http://www.amazon.com/Applied-Photovoltaics-Stuart-R-Wenham/dp/1844074013/ref=sr_1_1?ie=UTF8&s=books&qid=1279558328&sr=8-1
N1 -
Introduction
1. The Characteristics of Sunlight
2. Semiconductors and P-N Junctions
3. The Behavior of Solar Cells
4. Cell Properties and Design
5. PV Cell Interconnection and Module Fabrication
6. Stand-Alone Photovoltaic System Components
7. Designing Stand-Alone Photovoltaic Systems
8. Specific Purpose Photovoltaic Applications
9. Remote Area Power Supply Systems
10. Grid-Connected Photovoltaic Systems
11. Photovoltaic Water Pumping System Components
12. PV Water Pumping System Design
Appendicies
Index
KW - Wenham2007
ER -
TY - Generic
T1 - Low Cost, High Volume Production of >22% Efficiency Silicon Solar Cells
T2 - 22nd European Photovoltaic Specialist Conference
Y1 - 2007
A1 - De Ceuster, D.
A1 - P. Cousins
A1 - D. Rose
A1 - M. Cudzinovic
A1 - W. Mulligan
JA - 22nd European Photovoltaic Specialist Conference
N1 -
KW - DeCeuster2007
ER -
TY - CONF
T1 - Low Light Performance of Mono-Crystalline Silicon Solar Cells
T2 - 4th World Conference on Photovoltaic Energy Conference
Y1 - 2006
A1 - Gabriela Bunea
A1 - Karen Wilson
A1 - Yevgeny Meydbray
A1 - Matthew Campbell
A1 - Denis De Ceuster
JA - 4th World Conference on Photovoltaic Energy Conference
CY - Waikoloa, HI
UR - http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=4059885&tag=1
KW - bunea_low_2006
ER -
TY - Generic
T1 - Dependence of aluminium alloying on solar cell processing conditions
T2 - 13th Workshop on Crystalline Silicon Solar Cell Materials and Processes
Y1 - 2003
A1 - Christiana B Honsberg
A1 - Anwar, K.K.
A1 - Mehrvarz, H.R.
A1 - Cotter, J.E.
A1 - Wenham, S.R.
JA - 13th Workshop on Crystalline Silicon Solar Cell Materials and Processes
N1 -
KW - Honsberg2003
ER -
TY - JOUR
T1 - General parameterization of Auger recombination in crystalline silicon
JF - Journal of Applied Physics
Y1 - 2002
A1 - Mark J Kerr
A1 - Andrés Cuevas
KW - Auger effect
KW - carrier lifetime
KW - electron-hole recombination
KW - elemental semiconductors
KW - SILICON
PB - AIP
VL - 91
UR - http://link.aip.org/link/?JAP/91/2473/1
KW - Kerr2002
ER -
TY - JOUR
T1 - Generalized analysis of quasi-steady-state and transient decay open circuit voltage measurements
JF - Journal of Applied Physics
Y1 - 2002
A1 - Mark J Kerr
A1 - Andrés Cuevas
A1 - Ronald A. Sinton
AB - The current–voltage characteristics of solar cells and photodiodes can be determined by measuring the open-circuit voltage as a function of a slowly varying light intensity. This article presents a detailed theoretical analysis and interpretation of such quasi-steady-state Voc measurements (QssVoc). The ability of this analysis to accurately obtain the true steady-state device characteristics even in the case of high lifetime, high resistivity silicon devices is demonstrated experimentally. The QssVoc technique can be used to determine the minority carrier lifetime, and the new generalized analysis is required to do this accurately. An important outcome is that solar cell and diode device characteristics can be obtained from measurements of either the photoconductance or the open-circuit voltage, even using transient techniques.
VL - 91
N1 -
KW - Kerr2002
ER -
TY - JOUR
T1 - High performance light trapping textures for monocrystalline silicon solar cells
JF - Solar Energy Materials and Solar Cells
Y1 - 2001
A1 - Campbell, Patrick
A1 - Martin A Green
AB - Two novel texture schemes for the front of a c-Si silicon wafer solar cell are presented. The “bipyramid” texture is of two inverted pyramids of similar sizes laid out in alternating order. The “patch” texture uses a checkerboard layout of blocks of parallel grooves, with the grooves of alternating blocks perpendicularly oriented to each other. We estimate that these textures, which almost fully trap light for the first six passes through the substrate, can deliver better optical performance than the standard inverted pyramid texture, especially in narrow-band applications.
VL - 65
CP - 1-4
J1 - Solar Energy Materials and Solar Cells
KW - Campbell2001
ER -
TY - Generic
T1 - A New Generalized Detailed Balance Formulation to Calculate Solar Cell Efficiency Limits
T2 - 17th European Photovoltaic Solar Energy Conference
Y1 - 2001
A1 - Christiana B Honsberg
A1 - R. Corkish
A1 - S. P. Bremner
JA - 17th European Photovoltaic Solar Energy Conference
N1 -
KW - Honsberg2001
ER -
TY - JOUR
T1 - On the use of a bias-light correction for trapping effects in photoconductance-based lifetime measurements of silicon
JF - Journal of Applied Physics
Y1 - 2001
A1 - Daniel Macdonald
A1 - Ronald A. Sinton
A1 - Andrés Cuevas
KW - CARRIER DENSITY
KW - carrier lifetime
KW - electron traps
KW - electron-hole recombination
KW - elemental semiconductors
KW - hole traps
KW - photoconductivity
KW - SILICON
KW - solar cells
PB - AIP
VL - 89
UR - http://link.aip.org/link/?JAP/89/2772/1
KW - Macdonald2001
ER -
TY - CONF
T1 - A Quasi-Steady-State Open-Circuit Voltage Method for Solar Cell Characterization
T2 - 16th European Photovoltaic Solar Energy Conference
Y1 - 2000
A1 - Sinton, R.A.
A1 - Andrés Cuevas
JA - 16th European Photovoltaic Solar Energy Conference
CY - Glasgow, Scotland
KW - Sinton2000
ER -
TY - CONF
T1 - Simulating Electron-Beam-Induced Current Profiles Across p-n Junctions
T2 - Proceedings of the 16h European Solar Energy Conference
Y1 - 2000
A1 - R. Corkish
A1 - Luke, K. L.
A1 - Pietro P Altermatt
A1 - G. Heiser
JA - Proceedings of the 16h European Solar Energy Conference
PB - James and James
CY - Glasgow UK
SN - 9781902916187
N1 -
KW - Corkish2000
ER -
TY - Generic
T1 - Simulating Electron-Beam-Induced Current Profiles Across p-n Junctions
T2 - 16h European Solar Energy Conference
Y1 - 2000
A1 - R. Corkish
A1 - Luke, K. L.
A1 - Pietro P Altermatt
A1 - G. Heiser
JA - 16h European Solar Energy Conference
N1 -
KW - Corkish2000
ER -
TY - JOUR
T1 - Preparation of Zinc Selenide Thin Films by Electrodeposition Technique for Solar Cell Applications
JF - physica status solidi (a)
Y1 - 1997
A1 - Chandramohan, R.
A1 - Sanjeeviraja, C.
A1 - Mahalingam, T.
VL - 163
CP - 2
J1 - phys. stat. sol. (a)
KW - Chandramohan1997
ER -
TY - JOUR
T1 - Contactless determination of current–voltage characteristics and minority-carrier lifetimes in semiconductors from quasi-steady-state photoconductance data
JF - Applied Physics Letters
Y1 - 1996
A1 - Ronald A. Sinton
A1 - Andrés Cuevas
KW - carrier lifetime
KW - CV CHARACTERISTIC
KW - MINORITY CARRIERS
KW - photoconductivity
KW - SEMICONDUCTOR MATERIALS
KW - SILICON
KW - STEADY – STATE CONDITIONS
PB - AIP
VL - 69
UR - http://link.aip.org/link/?APL/69/2510/1
KW - Sinton1996
ER -
TY - JOUR
T1 - Texturing of polycrystalline silicon
JF - Solar Energy Materials and Solar Cells
Y1 - 1996
A1 - M. J. Stocks
A1 - A. J. Carr
A1 - Andrew W Blakers
VL - 40
UR - http://www.sciencedirect.com/science/article/B6V51-3VTFK7T-57/2/eb36bb8dfafef0de9e83d2f685caf541
KW - Stocks1996
ER -
TY - JOUR
T1 - 7000 High Efficiency Cells for a Dream
JF - Progress in Photovoltaics: Research and Applications
Y1 - 1994
A1 - Verlinden, P.J.
A1 - Richard M Swanson
A1 - Crane, R.A.
VL - 2
N1 -
KW - Verlinden1994
ER -
TY - Generic
T1 - 18% efficient polycrystalline silicon solar cells
T2 - Twenty First IEEE Photovoltaic Specialists Conference
Y1 - 1990
A1 - Narayanan, S.
A1 - Zolper, J.
A1 - Yun, F.
A1 - Wenham, S.R.
A1 - A. B. Sproul
A1 - Chong,C.M.
A1 - Martin A Green
JA - Twenty First IEEE Photovoltaic Specialists Conference
VL - 1
N1 -
KW - Narayanan1990
ER -
TY - JOUR
T1 - Analysis of the interaction of a laser pulse with a silicon wafer: Determination of bulk lifetime and surface recombination velocity
JF - Journal of Applied Physics
Y1 - 1987
A1 - Keung L. Luke
A1 - Li-Jen Cheng
KW - carrier lifetime
KW - LASERRADIATION HEATING
KW - MINORITY CARRIERS
KW - RECOMBINATION
KW - SILICON
KW - SILICON SOLAR CELLS
KW - SURFACE PROPERTIES
KW - THEORETICAL DATA
KW - VELOCITY
KW - WAFERS
PB - AIP
VL - 61
UR - http://link.aip.org/link/?JAP/61/2282/1
KW - Luke1987
ER -
TY - JOUR
T1 - Light trapping properties of pyramidally textured surfaces
JF - Journal of Applied Physics
Y1 - 1987
A1 - Campbell, Patrick
A1 - Martin A Green
VL - 62
CP - 1
J1 - J. Appl. Phys.
KW - Campbell1987
ER -
TY - JOUR
T1 - Limiting Efficiency of Silicon Solar Cells
JF - IEEE TRANSACTIONS ON ELECTRON DEVICES
Y1 - 1984
A1 - T. Tiedje
A1 - E Yablonovich
A1 - G.D. Cody
A1 - B.G. Brooks
VL - ED-31
N1 -
KW - Tiedje1984
ER -
TY - JOUR
T1 - Intensity Enhancement in Textured Optical Sheets for Solar Cells
JF - IEEE Transactions on Electron Devices
Y1 - 1982
A1 - E Yablonovich
A1 - G.D. Cody
VL - ED-29
N1 -
KW - Yablonovich1982
ER -
TY - ABST
T1 - United States Patent: 4137123 - Texture etching of silicon: method
Y1 - 1979
A1 - William L. Bailey
A1 - Michael G. Coleman
A1 - Cynthia B. Harris
A1 - Israel A. Lesk
AB - A surface etchant for silicon comprising an anisotropic etchant containing silicon is disclosed. The etchant provides a textured surface of randomly spaced and sized pyramids on a silicon surface. It is particularly useful in reducing the reflectivity of solar cell surfaces.
UR - http://patft.uspto.gov/netacgi/nph-Parser?Sect1=PTO2&Sect2=HITOFF&p=1&u=%2Fnetahtml%2FPTO%2Fsearch-bool.html&r=32&f=G&l=50&co1=AND&d=PTXT&s1=4,137,123&OS=4,137,123&RS=4,137,123
KW - Bailey1979
ER -
TY - JOUR
T1 - Electronic processes at grain boundaries in polycrystalline semiconductors under optical illumination
JF - IEEE Transactions on Electron Devices
Y1 - 1977
A1 - Card, H.C.
A1 - Yang, E.S.
VL - ED-24
N1 -
KW - Card1977
ER -
TY - JOUR
T1 - The absorption of radiation in solar stills
JF - Solar Energy
Y1 - 1969
A1 - P.I. Cooper
VL - 12
UR - http://www.sciencedirect.com/science/article/B6V50-497BD6C-27/2/a4ca2069fe8c8b0cfa571de016d93cc5
N1 -
KW - Cooper1969
ER -
TY - JOUR
T1 - Nondestructive determination of thickness and refractive index of transparent films
JF - IBM Journal of Research Devices
Y1 - 1964
A1 - W. A. Pliskin
A1 - E. E. Conrad
AB - A simple nondestructive method of measuring the refractive index and thickness of transparent films on reflective substrates has been developed. The technique involves the use of a microscope equipped with a monochromatic filter on the objective and a stage that can be rotated so that the reflected light is observed at various angles. The film thickness, d, is given by d = {[ΔNλ]/[2µ(cos} r2, - cos r1)], where λ is the wavelength of the filtered light, µ is the refractive index, and {ΔN} is the number of fringes observed between the angles of refraction r2, and r1.
VL - 8
UR - http://portal.acm.org/citation.cfm?id=1662391
N1 -
KW - Pliskin1964
ER -
TY - JOUR
T1 - A New Silicon P-N Junction Photocell for Converting Solar Radiation into Electrical Power
JF - Journal of Applied Physics
Y1 - 1954
A1 - Chapin, D.M.
A1 - Fuller, C.S.
A1 - Pearson, G.L.
VL - 25
N1 -
KW - Chapin1954
ER -
TY - JOUR
T1 - Ein neues Verfahren zur Messung der Kristallisationsgeschwindigheit der Metalle
JF - Zeitschrift für physikalische Chemie
Y1 - 1918
A1 - Czochralski, J.
VL - 92
KW - Czochralski1918
ER -